研究者詳細 - 中塚理

論文 - 中塚理

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Solid-phase crystallization of ultra-thin amorphous Ge layers on insulators 査読有り

Oishi, R; Asaka, K; Bolotov, L; Uchida, N; Kurosawa, M; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 61 巻 ( SC ) 2022年5月

Impact of oxide/4H-SiC interface state density on field-effect mobility of counter-doped n-channel 4H-SiC MOSFETs 査読有り

Doi, T; Shibayama, S; Sakashital, M; Taokal, N; Shimizu, M; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 61 巻 ( 2 ) 2022年2月

Low-temperature formation of Mg/n-type 4H-SiC ohmic contacts with atomically flat interface by lowering of Schottky barrier height 査読有り

Doi, T; Shibayama, S; Sakashita, M; Kojima, K; Shimizu, M; Nakatsuka, O

APPLIED PHYSICS EXPRESS 15 巻 ( 1 ) 2022年1月

Photoluminescence properties of heavily Sb doped Ge1-x Sn x and heterostructure design favorable for n+-Ge1-x Sn x active layer 査読有り

Zhang, SY; Fukuda, M; Jeon, J; Sakashita, M; Shibayama, S; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 61 巻 ( SA ) 2022年1月

Constructed Ge Quantum Dots and Sn Precipitate SiGeSn Hybrid Film with High Thermoelectric Performance at Low Temperature Region 査読有り

Peng, Y; Miao, L; Liu, CY; Song, HL; Kurosawa, M; Nakatsuka, O; Back, SY; Rhyee, JS; Murata, M; Tanemura, S; Baba, T; Baba, T; Ishizaki, T; Mori, T

ADVANCED ENERGY MATERIALS 12 巻 ( 2 ) 2022年1月

Interface Structures and Electrical Properties of Micro-Fabricated Epitaxial Hf-Digermanide/n-Ge(001) Contacts 査読有り

Kasahara, K; Senga, K; Sakashita, M; Shibayama, S; Nakatsuka, O

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 10 巻頁： 744 - 750 2022年

Reinforcement of power factor in N-type multiphase thin film of Si1-x-yGexSny by mitigating the opposing behavior of Seebeck coefficient and electrical conductivity 査読有り

Lai, HJ; Peng, Y; Gao, J; Song, HL; Kurosawa, M; Nakatsuka, O; Takeuchi, T; Miao, L

APPLIED PHYSICS LETTERS 119 巻 ( 11 ) 2021年9月

Lowering of the Schottky barrier height of metal/n-type 4H-SiC contacts using low-work-function metals with thin insulator insertion 査読有り

Doi, T; Shibayama, S; Sakashita, M; Shimizu, M; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 60 巻 ( 7 ) 2021年7月

No external load measurement strategy for micro thermoelectric generator based on high-performance Si1-x-yGexSny film 査読有り

Peng, Y; Zhu, SJ; Lai, HJ; Gao, J; Kurosawa, M; Nakatsuka, O; Tanemura, S; Peng, BL; Miao, L

JOURNAL OF MATERIOMICS 7 巻 ( 4 ) 頁： 665 - 671 2021年7月

Impact of Wet Annealing on Ferroelectric Phase Formation and Phase Transition of HfO2-ZrO2 System 査読有り

Shibayama, S; Nagano, J; Asaka, K; Sakashita, M; Nakatsuka, O

ACS APPLIED ELECTRONIC MATERIALS 3 巻 ( 5 ) 頁： 2203 - 2211 2021年5月

Silicon-based low-dimensional materials for thermal conductivity suppression: recent advances and new strategies to high thermoelectric efficiency 査読有り

Lai, HJ; Peng, Y; Gao, J; Kurosawa, M; Nakatsuka, O; Takeuchi, T; Miao, L

JAPANESE JOURNAL OF APPLIED PHYSICS 60 巻 ( SA ) 2021年1月

Improved interface uniformity of epitaxial HfGe2/Ge(001) contact by microfabrication and its electron conduction property 査読有り

Kasahara, K; Senga, K; Sakashita, M; Shibayama, S; Nakatsuka, O

TWENTIETH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT 2021) 頁： 58 - 60 2021年

Formation of ultra-thin Ge1-xSnx/Ge1-x-ySixSny quantum heterostructures and their electrical properties for realizing resonant tunneling diode 査読有り

Suwito, GR; Fukuda, M; Suprayoga, E; Ohtsuka, M; Hasdeo, EH; Nugraha, ART; Sakashita, M; Shibayama, S; Nakatsuka, O

APPLIED PHYSICS LETTERS 117 巻 ( 23 ) 2020年12月

Crystal Growth of Epitaxial 3C-SiC Thin Film on Si Substrate by Chemical Vapor Deposition using Single Precursor of Vinylsilane 招待有り査読有り

T. Doi, K. Hashimoto, W. Takeuchi, and O. Nakatsuka

ECS Trans. 98 巻頁： 169 - 176 2020年10月

(Invited) Heteroepitaxy and Strain Engineering of Germanium-Silicon-Tin Ternary Alloy Semiconductor Thin Films for Energy Band Design 招待有り査読有り

O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita

ECS Trans. 98 巻頁： 149 - 156 2020年10月

Realizing high thermoelectric performance in p-type Si1-x-yGexSny thin films at ambient temperature by Sn modulation doping 査読有り

Peng, Y; Lai, HJ; Liu, CY; Gao, J; Kurosawa, M; Nakatsuka, O; Takeuchi, T; Zaima, S; Tanemura, S; Miao, L

APPLIED PHYSICS LETTERS 117 巻 ( 5 ) 2020年8月

Ferroelectric phase formation for undoped ZrO2 thin films by wet O-2 annealing 査読有り

Shibayama Shigehisa, Nagano Jotaro, Sakashita Mitsuo, Nakatsuka Osamu

JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 2020年7月

Saturation of electrically activated Sb concentration in heavily Sb-doped n+-Ge1-xSnx epitaxial layers 査読有り

Jeon, J; Shibayama, S; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 2020年7月

Impact of byproducts formed on a 4H-SiC surface on interface state density of Al2O3/4H-SiC(0001) gate stacks 査読有り

Doi, T; Shibayama, S; Takeuchi, W; Sakashita, M; Taoka, N; Shimizu, M; Nakatsuka, O

APPLIED PHYSICS LETTERS 116 巻 ( 22 ) 2020年6月

Fermi-level pinning at metal/4H-SiC contact induced by SiCxOy interlayer 査読有り

Hashimoto, K; Doi, T; Shibayama, S; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 2020年4月

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