研究者詳細 - 中塚理

論文 - 中塚理

分割表示 286 件中 221 - 240 件目／全件表示 >>

Formation of Palladium Silicide on Heavily Doped Si(001) Substrates Using Ti Intermediate Layer 査読有り

R. Suruyana, O. Nakatsuka, S. Zaima

Jpn. J. Appl. Phys. 49 巻頁： 05FA09 (5 pages) 2010年

Mobility Behavior of Ge1-xSnx Layers Grown on Silicon-on-Insulator Substrates 査読有り

O. Nakatsuka, N. Tsutsui, Y. Shimura, S. Takeuchi, A. Sakai, S. Zaima

Jpn. J. Appl. Phys. 49 巻頁： 04DA10 (4 pages) 2010年

Structural change of direct silicon bonding substrates by interfacial oxide out-diffusion annealing 査読有り

T. Kato, Y. Nakamura, J. Kikkawa, A. Sakai, E. Toyoda, K. Izunome, O. Nakatsuka, S. Zaima, Y. Imai, S. Kimura, O. Sakata

Thin Solid Films 518 巻 ( 6 ) 頁： S147-W150 2010年

Novel Method to Introduce Uniaxial Tensile Strain in Ge by Microfabrication of Ge/Si1-xGex Structures on Si(001) Substrates 査読有り

T. Mizutani, O. Nakatsuka, A. Sakai, H. Kondo, M. Ogawa, and S. Zaima

Solid-State Electronics 53 巻 ( 11 ) 頁： 1198-1201 2009年11月

Microstructures in directly bonded Si substrates 査読有り

Y. Ohara, T. Ueda, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima, E. Toyoda, H. Isogai, T. Senda, K. Izunome, H. Tajiri, O. Sakata, S. Kimura, T. Sakata, H. Mori

Solid-State Electronics 53 巻 ( 8 ) 頁： 837-840 2009年8月

Control of Sn Precipitation and Strain Relaxation in Compositionally Step-Graded Ge1-xSnx Buffer Layers for Tensile-Strained Ge Layers 査読有り

Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima

Jpn. J. Appl. Phys. 48 48 巻頁： 04C130 2009年4月

Characterization and Analyses of Interface Structures in Directly Bonded Si(011)/Si(001) Substrates 査読有り

E. Toyoda, A. Sakai, H. Isogai, T. Senda, K. Izunome, K. Omote, O. Nakatsuka, S. Zaima

Jpn. J. Appl. Phys. 48 巻頁： 021208 2009年2月

記述言語：英語掲載種別：研究論文（学術雑誌）

We investigated the interface structure of directly bonded Si(011)/Si(001) substrates prepared by conventional bonding and grind-back. The interfacial structure was analyzed by transmission electron microscopy (TEM) and in-plane X-ray diffraction (XRD). The plan-view and cross-sectional TEM observations provided evidence that screw dislocation lines were localized to the interfacial plane and that threading dislocations were absent. Grazing-incidence in-plane XRD analyses confirmed the existence of mosaic structures at the interface. These structures were formed because of the deformation field produced by the screw dislocations. This allowed a high level of crystallinity to be maintained in regions away from the interface in both the Si(011) layer and the Si(001) wafer.

Mechanical Properties and Chemical Reactions at the Directly Bonded Si-Si Interface 査読有り

E. Toyoda, A. Sakai, T. Senda, H. Isogai, K. Izunome, O. Nakatsuka, M. Ogawa, S. Zaim

Jpn. J. Appl. Phys. 48 巻頁： 011202-1-5 2009年1月

記述言語：英語掲載種別：研究論文（学術雑誌）

Directly bonded interfaces of hydrophilic and hydrophobic Si(100) wafers were studied from the viewpoint of bonding energy and chemical products as a function of the annealing temperature. The experimental results indicated that for both hydrophilic and hydrophobic Si/Si bonded wafer pairs, the behavior of the bubbles at the bonding interface and the bonding energy were closely related to the behavior of the hydrogen and oxygen atoms at the bonding interface. The bonding mechanisms for both cases have been discussed on the basis of the chemical reactions induced by the annealing temperature.

Control of Dislocations and Sn Precipitations for Fabrication of Tensile-strained Ge on Ge1-xSnx Buffer Layer 査読有り

Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima

Trans. MRS-J 34 巻 ( 2 ) 頁： 301-304 2009年

Plasma surface treatment of polymers with inductivity-coupled RF plasmas driven by low-inductance antenna units 査読有り

Y. Setsuhara, K. Cho, K. Takenaka, A. Ebe, M. Shiratani, M. Sekine, M. Hori, E. Ikenaga, H. Kondo, O. Nakatsuka, S. Zaima

Thin Solid Films 518 巻 ( 3 ) 頁： 1006-1011 2009年

Ferromagnetism and Electronic structures of Nonstoichiometric Heusler-Alloy Fe3-xMnxSi Epilayers Grown on Ge(111) 査読有り

K. Hamaya, H. Itoh, O. Nakatsuka, K. Ueda, K. Yamamoto, M. Itakura, T. Taniyama, T. Ono, M. Miyao

Phys. Rev. Lett. 102 巻頁： 137204 (4 pages) 2009年

Formation of Uniaxial Tensile-strained Ge by Using Micro-patterning of Ge/Si1-xGe x/Si Structures 査読有り

T. Mizutani, O. Nakatsuka, A. Sakai, H. Kondo, and S. Zaima

Trans. MRS-J 34 巻 ( 2 ) 頁： 305-308 2009年

*Silicide and germanide technology for contacts and gates in MOSFET applications 招待有り査読有り

S. Zaima, O. Nakatsuka, H. Kondo, M. Sakashita, A. Sakai, and M. Ogawa

Thin Solid Films 517 巻 ( 1 ) 頁： 80-83 2008年8月

Characterization of bonding structures of directly bonded hybrid crystal orientation substrates 査読有り

E. Toyoda, A. Sakai, O. Nakatsuka, H. Isogai, T. Senda, K. Izunome, M. Ogawa, and S. Zaima

Thin Solid Films 517 巻 ( 1 ) 頁： 323-326 2008年8月

Tensile strained Ge layers on strain-relaxed Ge1-xSnx/virtual Ge substrates 査読有り

S. Takeuchi, A. Sakai, O. Nakatsuka, M. Ogawa, and S. Zaima

Thin Solid Films 517 巻 ( 1 ) 頁： 159-162 2008年8月

Growth of highly strain-relaxed Ge1-xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method 査読有り

S. Takeuchi, Y. Shimura, O. Nakatsuka, S. Zaima, M. Ogawa, and A. Sakai

Appl. Phys. Lett. 92 巻頁： 231916 2008年6月

Epitaxial Ag Layers on Si Substrates as a Buffer Layer for Carbon Nanotube Growth 査読有り

S. Oida, A. Sakai, O. Nakatsuka, M. Ogawa, and S. Zaima

Appl. Surf. Sci. 47 巻頁： 3742-3747 2008年5月

Dependence of Electrical Characteristics on Interfacial Structures of Epitaxial NiSi2/Si Schottky Contacts Formed from Ni/Ti/Si System 査読有り

O. Nakatsuka, A. Suzuki, S. Akimoto, A. Sakai, M. Ogawa and S. Zaima

Jpn. J. Appl. Phys. 47 巻 ( 4 ) 頁： 2402-2406 2008年4月

Scanning Tunneling Microscopy Observation of Initial Growth of Sn and Ge1-xSnx Layers on Ge(001) Substrates 査読有り

M. Yamazaki, S. Takeuchi, O. Nakatsuka, A. Sakai, M. Ogawa, and S. Zaima

Appl. Surf. Sci. 254 巻 ( 19 ) 頁： 6048-60651 2008年3月

Effect of alcohol sources on synthesis of single-walled carbon nanotubes 査読有り

S. Oida, A. Sakai, O. Nakatsuka, M. Ogawa and S. Zaima

Appl. Surf. Sci. 254 巻 ( 23 ) 頁： 7697-7702 2008年2月

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