研究者詳細 - 中塚理

論文 - 中塚理

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ゲルマニウムスズⅣ族混晶薄膜の結晶成長と電子物性招待有り査読有り

中塚理, 黒澤昌志

応用物理 88 巻 ( 9 ) 頁： pp. 597-603 2019年9月

Growth and applications of GeSn-related group-IV semiconductor materials 招待有り査読有り

S. Zaima, O. Nakatsuka, N. Taoka, M. Kuorsawa, W. Takeuchi, and M. Sakashita

Sci. Technol. Adv. Mater. 16 巻頁： 043502 (22pages) 2015年7月

First-principles investigation of phase transition from zincblende to L10 at high temperature in Si0.5Sn0.5 alloys 査読有り

Nagae, Y; Kurosawa, M; Shiraishi, K; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 64 巻 ( 2 ) 2025年2月

Ge0.75Sn0.25 on insulator metal-semiconductor-metal photodetector by layer transfer technique 査読有り

Maeda, T; Ishii, H; Chang, WH; Takagi, K; Shibayama, S; Kurosawa, M; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 64 巻 ( 1 ) 2025年1月

Emergence of Negative Differential Resistance Through Hole Resonant Tunneling in GeSn/GeSiSn Double Barrier Structure 査読有り

Shibayama, S; Ishimoto, S; Kato, Y; Sakashita, M; Kurosawa, M; Nakatsuka, O

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 13 巻頁： 79 - 85 2025年

Emergence of Negative Differential Resistance Through Hole Resonant Tunneling in GeSn/GeSiSn Double Barrier Structure (vol 13, pg 79, 2025) 査読有り

Shibayama, S; Ishimoto, S; Kato, Y; Sakashita, M; Kurosawa, M; Nakatsuka, O

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 13 巻頁： 134 - 134 2025年

Epitaxial growth of Ge1-xSnx thin film with Sn composition of 50% and possibility of Ge-Sn ordered bonding structure formation 査読有り

Shibayama, S; Shibata, K; Sakashita, M; Kurosawa, M; Nakatsuka, O

APPLIED PHYSICS EXPRESS 17 巻 ( 11 ) 2024年11月

Ge1-xSnx layers with x∼0.25 on InP(001) substrate grown by low-temperature molecular beam epitaxy reaching 70 °C and in-situ Sb doping 査読有り

Shibayama, S; Takagi, K; Sakashita, M; Kurosawa, M; Nakatsuka, O

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 176 巻 2024年6月

Layer transfer of epitaxially grown Ge-lattice-matched Si27.8Ge64.2Sn8 films 査読有り

Maeda, T; Ishii, H; Chang, WH; Zhang, SY; Shibayama, S; Kurosawa, M; Nakatsuka, O

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 176 巻 2024年6月

Tensile-strained Ge1-xSnx layers on Si(001) substrate by solid-phase epitaxy featuring seed layer introduction 査読有り

Hiraide, T; Shibayama, S; Kurosawa, M; Sakashita, M; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 63 巻 ( 4 ) 2024年4月

Emergence of ferroelectricity in ZrO2 thin films on TiN/Si featuring high temperature sputtering method 査読有り

Nagano, J; Ikeguchi, S; Doi, T; Sakashita, M; Nakatsuka, O; Shibayama, S

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 163 巻 2023年8月

Self-organized Ge1-xSnx quantum dots formed on insulators and their room temperature photoluminescence 査読有り

Hashimoto, K; Shibayama, S; Asaka, K; Sakashita, M; Kurosawa, M; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 62 巻 ( 7 ) 2023年7月

Heteroepitaxial growth of CaGe2 films on high-resistivity Si(111) substrates and its application for germanane synthesizing 査読有り

Okada, K; Shibayama, S; Sakashita, M; Nakatsuka, O; Kurosawa, M

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 161 巻 2023年7月

Lattice-matched growth of high-Sn-content (x∼0.1) Si1-xSnx layers on Si1-yGey buffers using molecular beam epitaxy 査読有り

Fujimoto, K; Kurosawa, M; Shibayama, S; Sakashita, M; Nakatsuka, O

APPLIED PHYSICS EXPRESS 16 巻 ( 4 ) 2023年4月

Crystalline and optoelectronic properties of Ge1-xSnx/high-Si-content-SiyGe1-x-ySnx double-quantum wells grown with low-temperature molecular beam epitaxy 査読有り

Zhang, SY; Shibayama, S; Nakatsuka, O

SEMICONDUCTOR SCIENCE AND TECHNOLOGY 38 巻 ( 1 ) 2023年1月

Sn-incorporation effect on thermoelectric properties of Sb-doped Ge-rich Ge1-x-y Si x Sn y epitaxial layers grown on GaAs(001) 査読有り

Kurosawa, M; Nakata, M; Zhan, TZ; Tomita, M; Watanabe, T; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 61 巻 ( 8 ) 2022年8月

Crystal structure change in multilayer GeH flakes by hydrogen desorption under ultrahigh vacuum environments 査読有り

Itoh, M; Araidai, M; Ohta, A; Nakatsuka, O; Kurosawa, M

JAPANESE JOURNAL OF APPLIED PHYSICS 61 巻 ( SC ) 2022年5月

Enhancement of channel mobility in 4H-SiC trench MOSFET by inducing stress at SiO2/SiC gate interface 査読有り

Kagoshima, E; Takeuchi, W; Kutsuki, K; Sakashita, M; Fujiwara, H; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 61 巻 ( SC ) 2022年5月

High-pressure polycrystalline thin-film synthesis and semiconducting property of platinum pernitride 査読有り

Niwa, K; Iizuka, T; Kurosawa, M; Nakamura, Y; Valencia, HO; Kishida, H; Nakatsuka, O; Sasaki, T; Gaida, NA; Hasegawa, M

AIP ADVANCES 12 巻 ( 5 ) 2022年5月

Visualization of local strain in 4H-SiC trench metal-oxide-semiconductor field-effect transistor using synchrotron nanobeam X-ray diffraction 査読有り

Takeuchi, W; Kagoshima, E; Sumitani, K; Imai, Y; Shibayama, S; Sakashita, M; Kimura, S; Tomita, H; Nishiwaki, T; Fujiwara, H; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 61 巻 ( SC ) 2022年5月

Solid-phase crystallization of ultra-thin amorphous Ge layers on insulators 査読有り

Oishi, R; Asaka, K; Bolotov, L; Uchida, N; Kurosawa, M; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 61 巻 ( SC ) 2022年5月

Impact of oxide/4H-SiC interface state density on field-effect mobility of counter-doped n-channel 4H-SiC MOSFETs 査読有り

Doi, T; Shibayama, S; Sakashital, M; Taokal, N; Shimizu, M; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 61 巻 ( 2 ) 2022年2月

Low-temperature formation of Mg/n-type 4H-SiC ohmic contacts with atomically flat interface by lowering of Schottky barrier height 査読有り

Doi, T; Shibayama, S; Sakashita, M; Kojima, K; Shimizu, M; Nakatsuka, O

APPLIED PHYSICS EXPRESS 15 巻 ( 1 ) 2022年1月

Photoluminescence properties of heavily Sb doped Ge1-x Sn x and heterostructure design favorable for n+-Ge1-x Sn x active layer 査読有り

Zhang, SY; Fukuda, M; Jeon, J; Sakashita, M; Shibayama, S; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 61 巻 ( SA ) 2022年1月

Constructed Ge Quantum Dots and Sn Precipitate SiGeSn Hybrid Film with High Thermoelectric Performance at Low Temperature Region 査読有り

Peng, Y; Miao, L; Liu, CY; Song, HL; Kurosawa, M; Nakatsuka, O; Back, SY; Rhyee, JS; Murata, M; Tanemura, S; Baba, T; Baba, T; Ishizaki, T; Mori, T

ADVANCED ENERGY MATERIALS 12 巻 ( 2 ) 2022年1月

Interface Structures and Electrical Properties of Micro-Fabricated Epitaxial Hf-Digermanide/n-Ge(001) Contacts 査読有り

Kasahara, K; Senga, K; Sakashita, M; Shibayama, S; Nakatsuka, O

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 10 巻頁： 744 - 750 2022年

Reinforcement of power factor in N-type multiphase thin film of Si1-x-yGexSny by mitigating the opposing behavior of Seebeck coefficient and electrical conductivity 査読有り

Lai, HJ; Peng, Y; Gao, J; Song, HL; Kurosawa, M; Nakatsuka, O; Takeuchi, T; Miao, L

APPLIED PHYSICS LETTERS 119 巻 ( 11 ) 2021年9月

Lowering of the Schottky barrier height of metal/n-type 4H-SiC contacts using low-work-function metals with thin insulator insertion 査読有り

Doi, T; Shibayama, S; Sakashita, M; Shimizu, M; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 60 巻 ( 7 ) 2021年7月

No external load measurement strategy for micro thermoelectric generator based on high-performance Si1-x-yGexSny film 査読有り

Peng, Y; Zhu, SJ; Lai, HJ; Gao, J; Kurosawa, M; Nakatsuka, O; Tanemura, S; Peng, BL; Miao, L

JOURNAL OF MATERIOMICS 7 巻 ( 4 ) 頁： 665 - 671 2021年7月

Impact of Wet Annealing on Ferroelectric Phase Formation and Phase Transition of HfO2-ZrO2 System 査読有り

Shibayama, S; Nagano, J; Asaka, K; Sakashita, M; Nakatsuka, O

ACS APPLIED ELECTRONIC MATERIALS 3 巻 ( 5 ) 頁： 2203 - 2211 2021年5月

Silicon-based low-dimensional materials for thermal conductivity suppression: recent advances and new strategies to high thermoelectric efficiency 査読有り

Lai, HJ; Peng, Y; Gao, J; Kurosawa, M; Nakatsuka, O; Takeuchi, T; Miao, L

JAPANESE JOURNAL OF APPLIED PHYSICS 60 巻 ( SA ) 2021年1月

Improved interface uniformity of epitaxial HfGe2/Ge(001) contact by microfabrication and its electron conduction property 査読有り

Kasahara, K; Senga, K; Sakashita, M; Shibayama, S; Nakatsuka, O

TWENTIETH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT 2021) 頁： 58 - 60 2021年

Formation of ultra-thin Ge1-xSnx/Ge1-x-ySixSny quantum heterostructures and their electrical properties for realizing resonant tunneling diode 査読有り

Suwito, GR; Fukuda, M; Suprayoga, E; Ohtsuka, M; Hasdeo, EH; Nugraha, ART; Sakashita, M; Shibayama, S; Nakatsuka, O

APPLIED PHYSICS LETTERS 117 巻 ( 23 ) 2020年12月

Crystal Growth of Epitaxial 3C-SiC Thin Film on Si Substrate by Chemical Vapor Deposition using Single Precursor of Vinylsilane 招待有り査読有り

T. Doi, K. Hashimoto, W. Takeuchi, and O. Nakatsuka

ECS Trans. 98 巻頁： 169 - 176 2020年10月

(Invited) Heteroepitaxy and Strain Engineering of Germanium-Silicon-Tin Ternary Alloy Semiconductor Thin Films for Energy Band Design 招待有り査読有り

O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita

ECS Trans. 98 巻頁： 149 - 156 2020年10月

Realizing high thermoelectric performance in p-type Si1-x-yGexSny thin films at ambient temperature by Sn modulation doping 査読有り

Peng, Y; Lai, HJ; Liu, CY; Gao, J; Kurosawa, M; Nakatsuka, O; Takeuchi, T; Zaima, S; Tanemura, S; Miao, L

APPLIED PHYSICS LETTERS 117 巻 ( 5 ) 2020年8月

Ferroelectric phase formation for undoped ZrO2 thin films by wet O-2 annealing 査読有り

Shibayama Shigehisa, Nagano Jotaro, Sakashita Mitsuo, Nakatsuka Osamu

JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 2020年7月

Saturation of electrically activated Sb concentration in heavily Sb-doped n+-Ge1-xSnx epitaxial layers 査読有り

Jeon, J; Shibayama, S; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 2020年7月

Impact of byproducts formed on a 4H-SiC surface on interface state density of Al2O3/4H-SiC(0001) gate stacks 査読有り

Doi, T; Shibayama, S; Takeuchi, W; Sakashita, M; Taoka, N; Shimizu, M; Nakatsuka, O

APPLIED PHYSICS LETTERS 116 巻 ( 22 ) 2020年6月

Fermi-level pinning at metal/4H-SiC contact induced by SiCxOy interlayer 査読有り

Hashimoto, K; Doi, T; Shibayama, S; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 2020年4月

Mobility enhancement by mechanical uniaxial stress on 4H-SiC (0001) lateral metal-oxide-semiconductor field-effect-transistor 査読有り

Takeuchi, W; Kutsuki, K; Kagoshima, E; Onishi, T; Iwasaki, S; Sakashita, M; Fujiwara, H; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 2020年4月

Realizing High Thermoelectric Performance at Ambient Temperature by Ternary Alloying in Polycrystalline Si1-x-yGexSny Thin Films with Boron Ion Implantation 査読有り

Peng, Y; Miao, L; Gao, J; Liu, CY; Kurosawa, M; Nakatsuka, O; Zaima, S

SCIENTIFIC REPORTS 9 巻 2019年10月

Development of Germanium-Tin-Related Semiconductor Heterostructures for Energy Band Design in Electronic and Optoelectronic Applications 招待有り査読有り

O. Nakatsuka, M. Fukuda, M. Sakashita, M. Kurosawa, S. Shibayama, and S. Zaima

ECS Trans. 92 巻 ( 4 ) 頁： 41-46 2019年10月

Formation and optoelectronic property of strain-relaxed Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny double heterostructures on a boron-ion-implanted Ge(001) substrate 査読有り

Fukuda, M; Rainko, D; Sakashita, M; Kurosawa, M; Buca, D; Nakatsuka, O; Zaima, S

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年8月

Ultra-low resistance contact for n-type Ge1-xSnx with by in-situ Sb heavily doping and nickel stanogermanide formation

J. Jeon, A. Suzuki, S. Shibayama, S. Zaima, and O. Nakatsuka

119 巻 ( 96 ) 頁： 5-9 2019年6月

イオン注入法によるⅣ族半導体混晶薄膜の歪緩和促進機構について

祖父江秀隆, 福田雅大, 柴山茂久, 財満鎭明, 中塚理

信学技報 119 巻 ( 96 ) 頁： 17-20 2019年6月

Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-xSnx on SiO2 fabricated by a low thermal budget process 査読有り

Takahashi, K; Ikenoue, H; Sakashita, M; Nakatsuka, O; Zaima, S; Kurosawa, M

APPLIED PHYSICS EXPRESS 12 巻 ( 5 ) 2019年5月

Effect of carbon in Si oxide interlayers of the Al2O3/4H-SiC structure on interfacial reaction by oxygen radical treatment 査読有り

Doi Takuma, Takeuchi Wakana, Shibayama Shigehisa, Sakashita Mitsuo, Taoka Noriyuki, Nakatsuka Osamu, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年4月

Effect of carbon in Si oxide interlayers of the Al2O3/4H-SiC structure on interfacial reaction by oxygen radical treatment (vol 58, SBBD05, 2019) 査読有り

Doi, T; Takeuchi, W; Shibayama, S; Sakashita, M; Taoka, N; Nakatsuka, O; Zaima, S

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年4月

Influence of Sn precursors on Ge1-xSnx growth using metal-organic chemical vapor deposition 査読有り

Miki, Y; Takeuchi, W; Nakatsuka, O; Zaima, S

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( SA ) 2019年2月

Synthesis of heavily Ga-doped Si1-xSnx/Si heterostructures and their valence-band-offset determination 査読有り

Kurosawa, M; Inaishi, Y; Tange, R; Sakashita, M; Nakatsuka, O; Zaima, S

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( SA ) 2019年2月

Further reduction of Schottky barrier height of Hf-germanide/n-Ge(001) contacts by forming epitaxial HfGe2 査読有り

Senga, K; Shibayama, S; Sakashita, M; Zaima, S; Nakatsuka, O

2019 NINETEENTH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT) 頁： . 2019年

Fabrication of Porous Silicon using Photolithography and Reactive Ion Etching (RIE) 査読有り

Pratiwi, ND; Handayani, M; Suryana, R; Nakatsuka, O

MATERIALS TODAY-PROCEEDINGS 13 巻頁： 92 - 96 2019年

Patterned Porous Silicon Prepared by Reactive Ion Etching Technique 査読有り

Suryana R., Pratiwi N. D., Handayani M., Santika M., Nakatsuka O.

INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS FOR BETTER FUTURE 2018 578 巻 2019年

Crystalline and Electrical Properties of Ge1-xSnx/Ge1-x-ySixSny Quantum Well Structures 査読有り

Suwito, GR; Fukuda, M; Shibayama, S; Sakashita, M; Nakatsuka, O; Zaima, S

2019 COMPOUND SEMICONDUCTOR WEEK (CSW) 2019年

Impact of crystalline structures on the thermal stability and Schottky barrier height of NiGe/Ge contact 査読有り

Deng, YS; He, DS; Qiu, Y; Gu, R; He, JQ; Nakatsuka, O

APPLIED PHYSICS LETTERS 113 巻 ( 25 ) 2018年12月

Formation of ultra-low resistance contact with nickel stanogermanide/heavily doped n+-Ge1-xSnx structure 査読有り

Jeon, J; Suzuki, A; Nakatsuka, O; Zaima, S

SEMICONDUCTOR SCIENCE AND TECHNOLOGY 33 巻 ( 12 ) 2018年12月

Ultra-thin germanium-tin on insulator structure through direct bonding technique 査読有り

Maeda, T; Chang, WH; Irisawa, T; Ishii, H; Oka, H; Kurosawa, M; Imai, Y; Nakatsuka, O; Uchida, N

SEMICONDUCTOR SCIENCE AND TECHNOLOGY 33 巻 ( 12 ) 2018年12月

Optoelectronic properties of high-Si-content-Gel-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny double heterostructure 査読有り

Fukuda, M; Rainko, D; Sakashita, M; Kurosawa, M; Buca, D; Nakatsuka, O; Zaima, S

SEMICONDUCTOR SCIENCE AND TECHNOLOGY 33 巻 ( 12 ) 2018年12月

Growth and electrical properties of in situ Sb-doped Ge1-xSnx epitaxial layers for source/drain stressor of strained-Ge transistors 査読有り

Jeon, J; Suzuki, A; Takahashi, K; Nakatsuka, O; Zaima, S

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 12 ) 2018年12月

Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si 査読有り

Gupta, S; Shimura, Y; Richard, O; Douhard, B; Simoen, E; Bender, H; Nakatsuka, O; Zaima, S; Loo, R; Heyns, M

APPLIED PHYSICS LETTERS 113 巻 ( 19 ) 2018年11月

Formation of epitaxial Hf digermanide/Ge(001) contact and its crystalline properties 査読有り

Nakatsuka, O; Suzuki, A; McVittie, J; Nishi, Y; Zaima, S

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 7 ) 2018年7月

Alleviation of Fermi level pinning at metal/n-Ge interface with lattice-matched SixGe1-x-ySny ternary alloy interlayer on Ge 査読有り

Suzuki, A; Nakatsuka, O; Sakashita, M; Zaima, S

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 6 ) 2018年6月

Energy band structure and electrical properties of Ga-oxide/GaN interface formed by remote oxygen plasma 査読有り

Yamamoto, T; Taoka, N; Ohta, A; Truyen, NX; Yamada, H; Takahashi, T; Ikeda, M; Makihara, K; Nakatsuka, O; Shimizu, M; Miyazaki, S

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 6 ) 2018年6月

Dopant behavior in heavily doped polycrystalline Ge1-xSnx layers prepared with pulsed laser annealing in water 査読有り

Takahashi, K; Kurosawa, M; Ikenoue, H; Sakashita, M; Nakatsuka, O; Zaima, S

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 4 ) 2018年4月

High n-type Sb dopant activation in Ge-rich poly-Ge1-xSnx layers on SiO2 using pulsed laser annealing in flowing water 査読有り

Takahashi, K; Kurosawa, M; Ikenoue, H; Sakashita, M; Nakatsuka, O; Zaima, S

APPLIED PHYSICS LETTERS 112 巻 ( 6 ) 2018年2月

Epitaxial growth of heavily doped n+-Ge layers using metal-organic chemical vapor deposition with in situ phosphorus doping 査読有り

Ike, S; Takeuchi, W; Nakatsuka, O; Zaima, S

THIN SOLID FILMS 645 巻頁： 57 - 63 2018年1月

Effect of N bonding structure in AlON deposited by plasma-assisted atomic layer deposition on electrical properties of 4H-SiC MOS capacitor 査読有り

Takeuchi, W; Yamamoto, K; Sakashita, M; Nakatsuka, O; Zaima, S

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 1 ) 2018年1月

Selective growth of Ge1-xSnx epitaxial layer on patterned SiO2/Si substrate by metal-organic chemical vapor deposition 査読有り

Takeuchi, W; Washizu, T; Ike, S; Nakatsuka, O; Zaima, S

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 1 ) 2018年1月

Improved thermoelectric property of B-doped Si/Ge multilayered quantum dot films prepared by RF magnetron sputtering 査読有り

Peng, Y; Miao, L; Li, C; Huang, R; Urushihara, D; Asaka, T; Nakatsuka, O; Tanemura, S

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 1 ) 2018年1月

Formation of SiC thin films by chemical vapor deposition with vinylsilane precursor 査読有り

Doi, T; Takeuchi, W; Jin, Y; Kokubun, H; Yasuhara, S; Nakatsuka, O; Zaima, S

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 1 ) 2018年1月

The morphological study of porous silicon formed by electrochemical anodization method

Suryana R., Sandi D. K., Nakatsuka O.

INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS FOR BETTER FUTURE 2017 333 巻 2018年

A New Application of Ge1-xSnx: Thermoelectric Materials 査読有り

Kurosawa, M; Imai, Y; Iwahashi, T; Takahashi, K; Sakashita, M; Nakatsuka, O; Zaima, S

SIGE, GE, AND RELATED COMPOUNDS: MATERIALS, PROCESSING, AND DEVICES 8 86 巻 ( 7 ) 頁： 321 - 328 2018年

In situ phosphorus-doped Ge1-xSnx layers grown using low-temperature metal-organic chemical vapor deposition 査読有り

Ike, S; Takeuchi, W; Nakatsuka, O; Zaima, S

SEMICONDUCTOR SCIENCE AND TECHNOLOGY 32 巻 ( 12 ) 2017年12月

Self-organized lattice-matched epitaxy of Si1-xSnx alloys on (001)-oriented Si, Ge, and InP substrates 査読有り

Kurosawa, M; Kato, M; Takahashi, K; Nakatsuka, O; Zaima, S

APPLIED PHYSICS LETTERS 111 巻 ( 19 ) 2017年11月

Si1-xGex Bulk Single Crystals for Substrates of Electronic Devices 査読有り

K. Kinoshita, Y. Arai, T. Maeda, and O. Nakatsuka

Mater. Sci. Semicond. Proc. 70 巻 ( 1 ) 頁： 12-16 2017年11月

Modulation of Fermi level pining position at metal/n-Ge interface by semimetal Ge1-xSnx and Sn interlayers 査読有り

A. Suzuki, M. Sakashita, O. Nakatsuka, and S. Zaima

Mater. Sci. Semicond. Proc. 70 巻 ( 1 ) 頁： 162-166 2017年11月

Formation and characterization of Ge1-x-ySixSny/ Ge1-xSnx/Ge1-x-ySixSny double heterostructures with strain-controlled Ge1-x-ySixSny layers 査読有り

M. Fukuda, T. Yamaha, T. Asano, S. Fujinami, Y. Shimura, M. Kurosawa, O. Nakatsuka, and S. Zaima

Mater. Sci. Semicond. Proc. 70 巻 ( 1 ) 頁： 156-161 2017年11月

Low-temperature crystallization of Ge-rich GeSn layers on Si3N4 substrate 査読有り

I. Yoshikawa, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima

Mater. Sci. Semicond. Proc. 70 巻 ( 1 ) 頁： 151-155 2017年11月

EXAFS study of local structure contributing to Sn stability in SiyGe1-y-zSnz 査読有り

Y. Shimura, T. Asano, T. Yamaha, M. Fukuda, W. Takeuchi, O. Nakatsuka, and S. Zaima

Mater. Sci. Semicond. Proc. 70 巻 ( 1 ) 頁： 133-138 2017年11月

Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration 査読有り

Taoka, N; Capellini, G; Schlykow, V; Montanari, M; Zaumseil, P; Nakatsuka, O; Zaima, S; Schroeder, T

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 70 巻頁： 139 - 144 2017年11月

Sii1-xGex bulk single crystals for substrates of electronic devices 査読有り

Kinoshita, K; Arai, Y; Maeda, T; Nakatsuka, O

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 70 巻頁： 12 - 16 2017年11月

Formation and characterization of Ge1-x-ySixSny/Ge1-xSnx/ Ge1-x-ySixSny double heterostructures with strain-controlled Ge1-x-ySixSny layers 査読有り

Fukuda, M; Yamaha, T; Asano, T; Fujinami, S; Shimura, Y; Kurosawa, M; Nakatsuka, O; Zaima, S

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 70 巻頁： 156 - 161 2017年11月

Growth and Applications of Si1-xSnx Thin Films 招待有り査読有り

M. Kurosawa, O. Nakatsuka, and S. Zaima

ECS Trans. 8 巻 ( 4 ) 頁： 253-258 2017年10月

Control of Ge1-x-ySixSny layer lattice constant for energy band alignment in Ge1-xSnx/Ge1-x-ySixSny heterostructures 査読有り

Fukuda, M; Watanabe, K; Sakashita, M; Kurosawa, M; Nakatsuka, O; Zaima, S

SEMICONDUCTOR SCIENCE AND TECHNOLOGY 32 巻 ( 10 ) 2017年10月

Selective epitaxial growth of Ge1-xSnx on Si by using metal-organic chemical vapor deposition 査読有り

T. Washizu, S. Ike, Y. Inuzuka, W. Takeuchi, O. Nakatsuka, and S. Zaima

J. Crystal Growth 468 巻頁： 614-619 2017年7月

Evaluation of energy band offset of Si1-xSnx semiconductors by numerical calculation using density functional theory 査読有り

Nagae, Y; Kurosawa, M; Araidai, M; Nakatsuka, O; Shiraishi, K; Zaima, S

JAPANESE JOURNAL OF APPLIED PHYSICS 56 巻 ( 4 ) 2017年4月

4H-SiC MOSキャパシタのAlON絶縁膜のリーク電流特性に窒素結合状態が与える効果

竹内和歌奈, 山本建策, 三村智博, 坂下満男, 中塚理, 財満鎭明

特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第22回）頁： 127-130 2017年1月

水中パルスレーザアニールを用いた多結晶Ge1-xSnx層中Sbの高活性化

高橋恒太, 黒澤昌志, 池上浩, 坂下満男, 中塚理, 財満鎭明

特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第22回）頁： 67-70 2017年1月

金属/Ge接合へのSixGe1-x-ySny 界面層導入がショットキー障壁高さに及ぼす効果

鈴木陽洋, 戸田祥太, 中塚理, 坂下満男, 財満鎭明

特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第22回）頁： 63-66 2017年1月

Hydrogen-surfactant-mediated epitaxy of Ge1-xSnx layer and its effect on crystalline and photoluminescence properties 査読有り

O. Nakatsuka, S. Fujinami, T. Asano, T. Koyama, M. Kurosawa, M. Sakashita, H. Kishida, and S. Zaima

Jpn. J. Appl. Phys. 56 巻 ( 1S ) 頁： 01AB05 (6 pages) 2017年1月

Solid phase crystallization of Si1-x-ySnxCy ternary alloy layers and characterization of its crystalline and optical properties 査読有り

S. Yano, T. Yamaha, Y. Shimura, W. Takeuchi, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys. 56 巻 ( 1S ) 頁： 01AB02 (7 pages) 2017年1月

Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration 査読有り

Taoka, N; Capellini, G; Schlykow, V; Montanari, M; Zaumseil, P; Nakatsuka, O; Zaima, S; Schroeder, T

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 57 巻頁： 48 - 53 2017年1月

Hydrogen-surfactant-mediated epitaxy of Ge1-xSnx layer and its effects on crystalline quality and photoluminescence property 査読有り

Nakatsuka, O; Fujinami, S; Asano, T; Koyama, T; Kurosawa, M; Sakashita, M; Kishida, H; Zaima, S

JAPANESE JOURNAL OF APPLIED PHYSICS 56 巻 ( 1 ) 2017年1月

Solid-phase crystallization of Si1-x-ySnxCy ternary alloy layers and characterization of their crystalline and optical properties 査読有り

Yano, S; Yamaha, T; Shimura, Y; Takeuchi, W; Sakashita, M; Kurosawa, M; Nakatsuka, O; Zaima, S

JAPANESE JOURNAL OF APPLIED PHYSICS 56 巻 ( 1 ) 2017年1月

Electrical and Optical Properties Improvement of GeSn Layers Formed at High Temperature under Well-controlled Sn Migration 査読有り

N. Taoka, G. Capellini, V. Schlykow, M. Montanari, P. Zaumseil, O. Nakatsuka, S. Zaima, and T. Schroeder

Mater. Sci. Semicond. Proc. 57 巻頁： 48-53 2017年

Development of in-situ Sb-Doped Ge1-xSnx Epitaxial Layers for Source/Drain Stressor of Strained Ge Transistors 査読有り

Jeon, J; Suzuki, A; Takahashi, K; Nakatsuka, O; Zaima, S

2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM) 頁： 249 - 251 2017年

Analysis of Microscopic Strain and Crystalline Structure in Ge/Ge1-xSnx Fine Structures by Using Synchrotron X-ray Microdiffraction 査読有り

S. Ike, O. Nakatsuka, Y. Inuzuka, T. Washizu, W. Takeuchi, Y. Imai, S. Kimura, and S. Zaima

ECS Trans. 75 巻 ( 8 ) 頁： 769-775 2016年10月

Influence of GeO2 deposition temperature by in atomic layer deposition on electrical properties of Ge gate stack+K12 査読有り

M. Kanematsu, S. Shibayama, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys. 55 巻 ( 8S2 ) 頁： 08PC05 (5 pages) 2016年8月

Density functional study for crystalline structures and electronic properties of Si1-xSnx binary alloys 査読有り

Y. Nagae, M. Kurosawa, S. Shibayama, M. Araidai, M. Sakashita, O. Nakatsuka, K. Shiraishi, and S. Zaima

Jpn. J. Appl. Phys. 55 巻 ( 8S2 ) 頁： 08PE04 (4 pages) 2016年8月

Ge基板上エピタキシャルGeSn膜の電気的活性な欠陥の評価

金田裕一, 兼松正行, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明

信学技報 116 巻 ( 118 ) 頁： 37-41 2016年6月

Crystalline Structure of TiC Ultra Thin Layers Formed on Highly Oriented Pyrolytic Graphite by Chemical Reaction from Ti/Graphite System 査読有り

O. Nakatsuka, K. Hisada, S. Oida, A. Sakai, and S. Zaima

Jpn. J. Appl. Phys. 55 巻 ( 6S3 ) 頁： 06JE02 (4 pages) 2016年6月

Sn系IV族半導体混晶薄膜の成長と物性評価招待有り

志村洋介, 竹内和歌奈, 坂下満男, 黒澤昌志, 中塚理, 財満鎭明

信学技報 116 巻 ( 1 ) 頁： 23-26 2016年4月

Effect of in situ Sb doping on crystalline and electrical characteristics of n-type Ge1-xSnx epitaxial layer 査読有り

J. Jeon, T. Asano, Y. Shimura, W. Takeuchi, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys. 55 巻 ( 4S ) 頁： 04EB13 (5 pages) 2016年3月

Influence of Precursor Gas on SiGe Epitaxial Material Quality in Terms of Structural and Electrical Defects 査読有り

S. Ike, E. Simoen, Y. Shimura, A. Hikavyy, W. Vandervorst, R. Loo, W. Takeuchi, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys. 55 巻 ( 4S ) 頁： 04EJ11 (5 pages) 2016年3月

Effect of Nitridation for SiO2/SiC Interface on Defects Properties near Conduction Band Edge 査読有り

W. Takeuchi, K. Yamamoto, N. Taoka, M.Sakashita, T. Kanemura, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys. 55 巻 ( 4S ) 頁： 04ER13 (5 pages) 2016年3月

Growth of ultra-high Sn content Ge1-xSnx epitaxial layer and its impact on controlling Schottky barrier height at metal/Ge interface 査読有り

A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima

Jpn. J. Appl. Phys. 55 巻 ( 4S ) 頁： 04EB12 (6 pages) 2016年3月

Experimental observation of type-I energy band alignment in lattice matched Ge1-x-y SixSny/Ge heterostructures 査読有り

T. Yamaha, S. Shibayama, T. Asano, K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

Appl. Phys. Lett. 108 巻頁： 061909 (5 pages) 2016年2月

Low thermal budget n-type doping into Ge(001) surface using ultraviolet laser irradiation in phosphoric acid solution 査読有り

K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

Appl. Phys. Lett. 108 巻頁： 052104 (4 pages) 2016年2月

Defect and dislocation structures in low-temperature-grown Ge and Ge1-xSnxepitaxial layers on Si(110) substrates 査読有り

S. Kidowaki, T. Asano, Y. Shimura, M. Kurosawa, N. Taoka, O. Nakatsuka, and S. Zaima

Thin Solid Films 598 巻頁： 72-81 2016年1月

Characterization of crystallinity of Ge1-xSnx epitaxial layers grown using metal-organic chemical vapor deposition 査読有り

Y. Inuzuka, S. Ike, T. Asano, W. Takeuchi, O. Nakatsuka, and S. Zaima

Thin Solid Films 602 巻頁： 7-12 2016年

Characterization of Shallow- and Deep-Level Defects of Undoped Ge1-xSnx Epitaxial Layers by Electrical Measurements 査読有り

W. Takeuchi, T. Asano, Y. Inuzuka, M. Sakashita, O. Nakatsuka, and S. Zaima

ECS J. Solid State Sci. Tech. 5 巻 ( 4 ) 頁： P3082-P3086 2015年12月

Mobility Behavior of Si1-x-yGexSny Polycrystals Grown on Insulators 査読有り

T. Ohmura, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

Trans. MRS-J 40 巻 ( 4 ) 頁： 351-354 2015年12月

Reduction of Schottky barrier height at metal/n-Ge interface by introducing an ultra-high Sn content Ge1-xSnx interlayer 査読有り

A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima

Appl. Phys. Lett. 107 巻頁： 212103 (5 pages) 2015年11月

Atom probe tomography study on Ge1-x-ySnxCy hetero-epitaxial film on Ge substrates 査読有り

E. Kamiyama, K. Sueoka, K. Terasawa, T. Yamaha, O. Nakatsuka, S. Zaima, K. Izunome, K. Kashima, and H. Uchida

Thin Solid Films 592 巻 ( A ) 頁： 54-58 2015年10月

Characterization of crystallinity of Ge1-xSnx epitaxial layers grown using metal-organic chemical vapor deposition 査読有り

Y. Inuzuka, S. Ikea, T. Asanoa, W. Takeuchi, O. Nakatsuka, and S. Zaima

Thin Solid Films 頁： in press 2015年10月

Challenges of Energy Band Engineering with New Sn-Related Group IV Semiconductor Materials for Future Integrated Circuits 招待有り査読有り

S. Zaima, O. Nakatsuka, T. Yamaha, T. Asano, S. Ike, A. Suzuki, M. Kurosawa, W. Takeuchi, M. Sakashita

ECS Trans. 69 巻 ( 10 ) 頁： 89-98 2015年10月

Oxygen and germanium migration at low temperature influenced by the thermodynamic nature of the materials used in germanium metal-insulator-semiconductor structures 査読有り

K. Kato, N. Taoka, M. Sakashita, O. Nakatsuka, and S. Zaima

Appl. Phys. Lett. 107 巻頁： 102102 (5 pages) 2015年9月

Effect of Sn on crystallinity and electronic property of low temperature grown polycrystalline-Si1-x-yGexSny layers on SiO2 査読有り

T. Yamaha, M. Kurosawa, T. Ohmura, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Solid State Electronics 110 巻頁： 54-58 2015年8月

Epitaxial formation of Ni germanide on Ge(001) substrate by reactive deposition 査読有り

Y. Deng, O. Nakatsuka, A. Suzuki, M. Sakashita, and S. Zaima

Solid State Electronics 110 巻頁： 44-48 2015年8月

Epitaxial growth and crystalline properties of Ge1-x-ySixSny on Ge(001) substrates 査読有り

T. Asano, T. Terashima, T. Yamaha, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Solid State Electronics 110 巻頁： 49-53 2015年8月

Growth of Si1-x-ySnxCy ternary alloy layer on Si(001) substrate and characterization of its crystalline property 査読有り

T. Yamaha, M. Kurosawa, W. Takeuchi, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys. 54 巻 ( 8S1 ) 頁： 08KA11 2015年7月

High-mobility tin-doped polycrystalline germanium layers formed on insulating substrates by low-temperature solid-phase crystallization 査読有り

W. Takeuchi, N. Taoka, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

Appl. Phys. Lett. 107 巻頁： 022103 (4 pages) 2015年7月

Ge1-xSnxエピタキシャル層中の欠陥へ及ぼす熱処理の効果

浅野孝典, 柴山茂久, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明

電子情報通信学会技術研究報告 115 巻 ( 108 ) 頁： 63-68 2015年6月

SiO2/SiC MOS界面の欠陥特性に酸窒化処理が与える影響招待有り

竹内和歌奈, 山本建策, 坂下満男, 金村髙司, 中塚理, 財満鎭明

電子情報通信学会技術研究報告 115 巻 ( 108 ) 頁： 27-30 2015年6月

金属/Ge界面への超高Sn組成SnxGe1-x層導入による界面電気伝導特性の制御

鈴木陽洋, 柴山茂久, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明

電子情報通信学会技術研究報告 115 巻 ( 108 ) 頁： 57-61 2015年6月

Epitaxial Ge1-xSnx layers grown by metal-organic chemical vapor deposition using Tertiary-butyl-germane and Tri-butyl-vinyl-tin 査読有り

Y. Inuzuka, S. Ike, T. Asano, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

ECS Solid State Lett. 4 巻 ( 8 ) 頁： P1-P3 2015年6月

Characterization of locally strained Ge1-xSnx/Ge fine structures by synchrotron X-ray microdiffraction 査読有り

S. Ike, O. Nakatsuka, Y. Moriyama, M. Kurosawa, N. Taoka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima

Appl. Phys. Lett. 106 巻頁： 182104 (5 pages) 2015年5月

高Sn組成SiSnの形成とバンド構造　～直接遷移構造化を目指して～招待有り

黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明

電子情報通信学会技術研究報告 115 巻 ( 18 ) 頁： 35-37 2015年4月

Near-infrared light absorption by polycrystalline SiSn alloys grown on insulating layers 査読有り

M. Kurosawa, M. Kato, T. Yamaha, N. Taoka, O. Nakatsuka, and S. Zaima

Appl. Phys. Lett. 106 巻頁： 171908 (5 pages) 2015年4月

Influence of Interface Structure on Electrical Properties of NiGe/Ge Contacts 査読有り

Y. Deng, O. Nakatsuka, M. Sakashita, and S. Zaima

Jpn. J. Appl. Phys. 54 巻 ( 5S ) 頁： 05EA01 (6 pages) 2015年4月

Impact of Hydrogen Surfactant on Crystallinity of Ge1-xSnx Epitaxial Layers 査読有り

T. Asano, N. Taoka, K. Hozaki, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys. 54 巻 ( 4S ) 頁： 04DH15 (4 pages) 2015年3月

エピタキシャル金属/ゲルマニウム接合の形成による界面電気伝導特性の制御招待有り

中塚理, 鄧云生, 鈴木陽洋, 坂下満男, 田岡紀之, 財満鎭明

電子情報通信学会技術研究報告 114 巻 ( 469 ) 頁： 17-22 2015年3月

Formation, crystalline structure, and optical properties of Ge1-x-ySnxCy ternary alloy layers 査読有り

T. Yamaha, K. Terasawa, H. Oda, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys 54 巻 ( 4S ) 頁： 04DH08 (6 pages) 2015年2月

Formation of chemically stable GeO2 on the Ge surface with pulsed metal-organic chemical vapor deposition 査読有り

S. Shibayama, T. Yoshida, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Appl. Phys. Lett. 106 巻頁： 062107 (4 pages) 2015年2月

Non-uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation 査読有り

N. Taoka, T. Asano, T. Yamaha, T. Terashima, O. Nakatsuka, I. Costina, P. Zaumseil, G. Capellini, S. Zaima, and T. Schroeder

Appl. Phys. Lett. 106 巻頁： 061107 (5 pages) 2015年2月

GeO2薄膜の正方晶形成による化学的安定性の向上

柴山茂久, 吉田鉄兵, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明

特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第20回研究会）頁： 185-188 2015年1月

Sn/Geコンタクトにおけるフェルミレベルピニングの軽減およびショットキー障壁高さの低減

鈴木陽洋, 鄧云生, 柴山茂久, 黒澤昌志, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明

特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第20回研究会）頁： 59-62 2015年1月

Formation of high-quality oxide/Ge1-xSnx interface with high surface Sn content by controlling Sn migration 査読有り

K. Kato, N. Taoka, T. Asano, T. Yoshida, M. Sakashita, O. Nakatsuka, and S. Zaima

Appl. Phys. Lett. 105 巻頁： 122103 (5 pages) 2014年9月

Robustness of Sn precipitation during thermal oxidation of Ge1-xSnx on Ge(001) 査読有り

K. Kato, T. Asano, N. Taoka, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys. 53 巻 ( 8S1 ) 頁： 08LD04 (8 pages) 2014年7月

Interface properties of Al2O3/Ge structures with thin Ge oxide interfacial layer formed by pulsed metal organic chemical vapor deposition 査読有り

T. Yoshida, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, W. Takeuchi, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys. 53 巻 ( 8S1 ) 頁： 08LD03 (6 pages) 2014年7月

Importance of Ge surface oxidation with high oxidation rate in obtaining low interface state density at oxide/Ge interfaces 査読有り

S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys. 53 巻 ( 8S1 ) 頁： 08LD02 (6 pages) 2014年7月

多層セル型太陽電池用IV族多元系混晶の結晶成長と界面構造制御招待有り査読有り

中塚理, 財満鎭明

日本結晶成長学会誌 41 巻 ( 2 ) 頁： 74-80 2014年7月

［依頼講演］ “絶縁膜上におけるIV族半導体多結晶薄膜の低温形成～低融点Snの活用～招待有り

黒澤昌志, 田岡紀之, 池上浩, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明

電子情報通信学会技術研究報告 114 巻 ( 88 ) 頁： 91-95 2014年6月

Sn/Geコンタクトにおけるフェルミレベルピニング現象の軽減

鈴木陽洋, 朝羽俊介, 横井淳, 黒澤昌志, 加藤公彦, 坂下満男, 田岡紀之, 中塚理, 財満鎭明

電子情報通信学会技術研究報告 114 巻 ( 88 ) 頁： 11-16 2014年6月

Ge1-xSnxエピタキシャル成長における積層欠陥構造の制御

浅野孝典, 田岡紀之, 中塚理, 財満鎭明

電子情報通信学会技術研究報告 114 巻 ( 88 ) 頁： 21-25 2014年6月

n型Ge単結晶中におけるSnと空孔関連欠陥との相互作用

竹内和歌奈, 田岡紀之, 坂下満男, 中塚理, 財満鎭明

電子情報通信学会技術研究報告 114 巻 ( 57 ) 頁： 113-118 2014年5月

Band alignment at interfaces of amorphous Al2O3 with Ge1-xSnx- and strained Ge-based channels 査読有り

H.-Y. Chou, V. V. Afanas'ev, M. Houssa, A. Stesmans, B. Vincent, F. Gencarelli, Y. Shimura, C. Merckling, R. Loo, O. Nakatsuka, and S. Zaima

Appl. Phys. Lett. 104 巻頁： 202107 (5 pages) 2014年5月

Formation of high-quality Ge1-xSnx layer on Ge(110) substrate with strain-induced confinement of stacking faults at Ge1-xSnx/Ge interfaces 査読有り

T. Asano, N. Taoka, O. Nakatsuka and S. Zaima

Appl. Phys. Express 7 巻 ( 6 ) 頁： 061301 (3 pages) 2014年5月

Interaction of Sn atoms with defects introduced by ion implantation in Ge substrate 査読有り

N. Taoka, M. Fukudome, W. Takeuchi, T. Arahira, M. Sakashita, O. Nakatsuka, and S. Zaima

J. Appl. Phys. 115 巻頁： 173102 (7 pages). 2014年5月

Impacts of AlGeO formation by post thermal oxidation of Al2O3/Ge structure on interfacial properties 査読有り

S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Thin Solid Films 557 巻頁： 282–287 2014年4月

Epitaxial formation and electrical properties of Ni germanide/Ge(110) contacts 査読有り

Y. S. Deng, O. Nakatsuka, J. Yokoi, N. Taoka, and S. Zaima

Thin Solid Films 557 巻頁： 84-89 2014年4月

Characterization of Crystalline Structures of SiGe Substrate Formed by Traveling Liquidus-Zone Method for Devices with Ge/SiGe 査読有り

T. Yamaha, O. Nakatsuka, N. Taoka, K. Kinoshita, S. Yoda, and S. Zaima

Thin Solid Films 557 巻頁： 129-134 2014年4月

Influence of Ge Substrate Orientation on Crystalline Structures of Ge1-xSnx Epitaxial Layers 査読有り

T. Asano, S. Kidowaki, M. Kurosawa, N. Taoka, O. Nakatsuka, and S. Zaima

Thin Solid Films 557 巻頁： 159–163 2014年4月

Formation and characterization of locally strained Ge1-xSnx/Ge microstructures 査読有り

S. Ike, Y. Moriyama, M. Kurosawa, N. Taoka, O. Nakatsuka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima

Thin Solid Films 557 巻頁： 164–168 2014年4月

Analysis for positions of Sn atoms in epitaxial Ge1-xSnx film in low temperature depositions 査読有り

E. Kamiyama, K. Sueoka, O. Nakatsuka, N. Taoka, and S. Zaima, K. Izunome, K. Kashima

Thin Solid Films 557 巻頁： 173–176 2014年4月

Importance of Control of Oxidant Partial Pressure on Structural and Electrical Properties of Pr-oxide Films 査読有り

K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Thin Solid Films 557 巻頁： 276–281 2014年4月

Stabilized formation of tetragonal ZrO2 thin film with high permittivity 査読有り

K. Kato, T. Saito, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Thin Solid Films 557 巻頁： 192–196 2014年4月

Formation and crystalline structure of Ni silicides on Si(110) substrate 査読有り

O. Nakatsuka, M. Hasegawa, K. Kato, N. Taoka, and S. Zaima

Jpn. J. Appl. Phys. 53 巻 ( 5S2 ) 頁： 05GA12 (5 pages) 2014年4月

Observation of lattice spacing fluctuation and strain undulation around through-Si vias in wafer-on-wafer structures using X-ray microbeam diffraction 査読有り

N. Taoka, O. Nakatsuka, Y. Mizushima, H. Kitada, Y. S. Kim, T. Nakamura, T. Ohba, and S. Zaima

Jpn. J. Appl. Phys. 53 巻 ( 5S2 ) 頁： 05GE03 (6 pages) 2014年4月

Effect of thermal cleaning on formation of epitaxial Ni germanide layer on Ge(110) substrate 査読有り

Y. Deng, O. Nakatsuka, N. Taoka, and S. Zaima

Jpn. J. Appl. Phys. 53 巻 ( 5S2 ) 頁： 05GA06 (6 pages) 2014年4月

Reduction of Schottky barrier height for n-type Ge contact by using Sn electrode 査読有り

A. Suzuki, S. Asaba, J. Yokoi, K. Kato, M. Kurosawa, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys. 53 巻 ( 4S ) 頁： 04EA06 (6 pages) 2014年3月

Large grain growth of Ge-rich Ge1-x Snx (x~0.02) on insulating surfaces using pulsed laser annealing in flowing water 査読有り

M. Kurosawa, N. Taoka, H. Ikenoue, O. Nakatsuka, and S. Zaima

Appl. Phys. Lett. 104 巻頁： 061901 (3 pages) 2014年2月

Defects Induced by Reactive Ion Etching in Ge Substrate 査読有り

Kusumandari, N. Taoka, W. Takeuchi, M. Sakashita, O. Nakatsuka, S. Zaima

Advanced Materials Research 896 巻頁： 241-244 2014年2月

Al2O3/SiC MOS構造における伝導帯端近傍の電気特性

田岡紀之, 坂下満男, 中塚理, 財満鎭明

特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第19回研究会）頁： 205-208 2014年1月

低界面準位密度を有するGe MOS構造を実現するGe表面の酸化条件

柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理,財満鎭明

特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第19回研究会）頁： 13-16 2014年1月

固溶限を超えるSn組成を有するGe1-xSnx層中におけるSn原子の熱安定性

加藤公彦, 浅野孝典, 田岡紀之, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明

特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第19回研究会）頁： 37-40 2014年1月

MOCVD法により形成した極薄GeO2を用いた Al2O3/GeOx/Ge 構造の電気的特性および構造評価

吉田鉄兵, 加藤公彦, 柴山茂久, 坂下満男, 田岡紀之, 竹内和歌奈, 中塚理, 財満鎭明

特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第19回研究会）頁： 131-134 2014年1月

Effect of Sn atoms on incorporation of vacancies in epitaxial Ge1-xSnx film grown at low temperature 査読有り

E. Kamiyama, S. Nakagawa, K Sueoka, T. Ohmura, T. Asano, O. Nakatsuka, N. Taoka, S. Zaima, K. Izunome, and K. Kashima

Appl. Phys. Express 7 巻 ( 2 ) 頁： 021302 (3 pages) 2014年1月

Al2O3/SiC MOS構造における伝導帯端近傍の電気特性

田岡紀之, 坂下満男, 中塚理, 財満鎭明

特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第18回研究会）頁： 205-208 2014年1月

Al2O3/Ge構造に対する熱酸化機構の解明

柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明

特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第18回研究会）頁： 39-42 2014年1月

テトラエトキシゲルマニウムを用いた極薄Ge酸化膜の形成

吉田鉄兵, 加藤公彦, 柴山茂久, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明

特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第18回研究会）頁： 151-154 2014年1月

Pr 酸化膜/Ge構造におけるゲート金属が界面反応に与える影響

加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明

特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第18回研究会）頁： 155-158 2014年1月

Reduction of Interface States Density Due to Post Oxidation with Formation of AlGeO Layer at Al2O3/Ge Interface 査読有り

S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

ECS Trans. 58 巻 ( 9 ) 頁： 301-308 2013年10月

Heteroepitaxial Growth of Sn-Related Group-IV Materials on Si Platform for Microelectronic and Optoelectronic Applications: Challenges and Opportunities 招待有り査読有り

O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, M. Sakashita, and S. Zaima

ECS Trans. 58 巻 ( 9 ) 頁： 149-155 2013年10月

Characterization of Local Strain Structures in Heteroepitaxial Ge1-xSnx/Ge Microstructures by Using Microdiffraction Method 査読有り

S. Ike, Y. Moriyama, M. Kurosawa, N. Taoka, O. Nakatsuka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima,

ECS Trans. 58 巻 ( 9 ) 頁： 185-192 2013年10月

Liquid-Sn-driven lateral growth of poly-GeSn on insulator assisted by surface oxide layer 査読有り

M. Kurosawa, N. Taoka, M. Sakashita, O. Nakatsuka, M. Miyao, and S. Zaima

Appl. Phys. Lett. 103 巻頁： 101904 (4 pages) 2013年9月

Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al2O3/Ge structure 査読有り

S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Appl. Phys. Lett. 103 巻頁： 082114 (4 pages) 2013年8月

Broad defect depth distribution in germanium substrates induced by CF4 plasma 査読有り

Kusumandari, N. Taoka, W. Takeuchi, M. Fukudome, M. Sakashita, O. Nakatsuka, and S. Zaima

Appl. Phys. Lett. 103 巻頁： 033511 (4 pages) 2013年7月

Development of epitaxial growth technology for Ge1-xSnx alloy and study of its properties for Ge nanoelectronics 招待有り査読有り

O. Nakatsuka, Y. Shimura, W. Takeuchi, N. Taoka, and S. Zaima

Solid-State Electron. 83 巻頁： 82-86 2013年5月

Epitaxial growth and anisotropic strain relaxation of Ge1-xSnx layers on Ge(1 1 0) substrates

T. Asano, Y. Shimura, O. Nakatsuka, and S. Zaima

Solid-State Electron. 83 巻頁： 71-75 2013年5月

Effect of gate metal on chemical bonding state in metal/Pr-oxide/Ge gate stack structure 査読有り

K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Solid-State Electron. 83 巻頁： 56-60 2013年5月

Interfacial Reaction Mechanism in Al2O3/Ge Structure by Oxygen Radical

K. Kato, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys. 52 巻頁： 04CA08 (7 pages) 2013年4月

Influence of Sn Incorporation and Growth Temperature on Crystallinity of Ge1-xSnx Layers Heteroepitaxially Grown on Ge(110) Substrates 査読有り

T. Asano, Y. Shimura, O. Nakatsuka, and S. Zaima

Thin Solid Films 531 巻頁： 504-508 2013年3月

Suppressive Effect of Interface Reaction and Water Absorption by Al Incorporation into Pr-oxide Film 査読有り

W. Takeuchi, K. Furuta, K .Kato, M. Sakashita, H. Kondo, O. Nakatsuka, and S. Zaima

J. Phys.: Conf. Ser. 417 巻頁： 012017 (6 pages) 2013年3月

Effect of Interfacial Reactions in Radical Process on Electrical Properties of Al2O3/Ge Gate Stack Structure 査読有り

K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

J. Phys.: Conf. Ser. 417 巻頁： 012001 2013年3月

Effects of Light Exposure during Plasma Processing on Electrical Properties of GeO2/Ge Structures 査読有り

Kusumandari, W. Takeuchi, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys. 52 巻頁： 01AC04 2013年1月

Al2O3/Ge構造に対する熱酸化機構の解明

柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明

特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第18回研究会）頁： 39-42 2013年1月

Pr 酸化膜/Ge構造におけるゲート金属が界面反応に与える影響

加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明

特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第18回研究会）頁： 155-158 2013年1月

テトラエトキシゲルマニウムを用いた極薄Ge酸化膜の形成

吉田鉄兵, 加藤公彦, 柴山茂久, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明

特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第18回研究会）頁： 151-154 2013年1月

Effect of atomic deuterium irradiation on initial growth of Sn and Ge1-xSnx on Ge(0 0 1) substrates 査読有り

T. Shinoda, O. Nakatsuka, Y. Shimura, S. Takeuchi, and S. Zaima

Appl. Surf. Sci. 259 巻 ( 15 ) 頁： 754-757 2012年10月

Growth and Characterization of Heteroepitaxial Layers of Ge1-x-ySixSny Ternary Alloy 査読有り

T. Yamaha, O. Nakatsuka, S. Takeuchi, W. Takeuchi, N. Taoka, K. Araki, K. Izunome, and S. Zaima

ECS Trans. 50 巻 ( ９ ) 頁： 907-913 2012年10月

Growth and Optical Properties of Ge1-xSnx Alloy Thin Films with a High Sn Content 招待有り査読有り

S. Zaima, O. Nakatsuka, M. Nakamura, W. Takeuchi, Y. Shimura, and N. Taoka

ECS Trans. 50 巻 ( 9 ) 頁： 897-902 2012年10月

Growth of Ge1-xSnx heteroepitaxial layers with very high Sn contents on InP(001) substrates 査読有り

M. Nakamura, Y. Shimura, S. Takeuchi, O. Nakatsuka, and S. Zaima

Thin Solid Films 520 巻 ( 8 ) 頁： 3201–3205 2012年2月

Homogeneous Si0.5Ge0.5 bulk crystal growth as substrates for strained Ge thin films by the traveling liquidus-zone method 査読有り

K. Kinoshita, O. Nakatsuka, S. Yoda, and S. Zaima

Thin Solid Films 520 巻 ( 8 ) 頁： 3279–3282 2012年2月

Improvement of Al2O3/Ge interfacial properties by O2-annealing 査読有り

S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

Thin Solid Films 520 巻 ( 8 ) 頁： 3397–3401 2012年2月

Low temperature formation of Si1-x-yGexSny-on-insulator structures by using solid-phase mixing of Ge1-zSnz/Si-on-insulator substrates 査読有り

O. Nakatsuka, M. Mochizuki, Y. Shimura, T. Yamaha, and S. Zaima

Thin Solid Films 520 巻 ( 8 ) 頁： 3288–3292 2012年2月

Homogeneous Si0.5Ge0.5 bulk crystal growth as substrates for strained Ge thin films by the traveling liquidus-zone method 査読有り

K. Kinoshita, O. Nakatsuka, S. Yoda, and S. Zaima

Thin Solid Films 520 巻 ( 8 ) 頁： 3279–3282 2012年2月

In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates 査読有り

Y. Shimura, S. Takeuchi, O. Nakatsuka, B. Vincent, F. Gencarelli, T. Clarysse, W. Vandervorst, M. Caymax, R. Loo, A. Jensen, D.H. Petersen, and S. Zaima

Thin Solid Films 520 巻 ( 8 ) 頁： 3206–3210 2012年2月

Crystallinity Improvement of Epitaxial Ge Grown on a Ge(110) Substrate by Incorporation of Sn 査読有り

Y. Shimura, T. Asano, O. Nakatsuka, and S. Zaima

Appl. Phys. Express 5 巻頁： 015501 2012年1月

Characterization of Damage of Al2O3/Ge Gate Stack Structure Induced with Light Radiation during Plasma Nitridation 査読有り

Kusumandari, W.Takeuchi, K. Kato, S. Shibayama, M. Sakashita, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys. 51 巻頁： 01AJ01 2012年1月

Control of Interfacial Properties of Al2O3/Ge Gate Stack Structure using Radical Nitridation Technique 査読有り

K. Kato, S. Kyogoku, M. Sakashita, W. Takeuchi, H. Kondo, S. Takeuchi, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys. 50 巻 ( 10 ) 頁： 10PE02 (7 pages) 2011年10月

Structural Analysis of Si-Based Nanodot Arrays Self-Organized by Selective Etching of SiGe/Si Films 査読有り

M. Takahashi, Y. Nakamura, J. Kikkawa, O. Nakatsuka, S. Zaima, and Akira Sakai

Jpn. J. Appl. Phys. 50 巻 ( 8 ) 頁： 08LB11 (4 pages) 2011年8月

Formation of Ni(Ge1-xSnx) Layers with Solid-Phase Reaction in Ni/Ge1-xSnx/Ge Systems 査読有り

T. Nishimura, Y. Shimura, S. Takeuchi, B. Vincent, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, and S. Zaima

Solid-State Electronics 60 巻 ( 1 ) 頁： 46-52 2011年6月

Ge1-xSnx stressors for strained-Ge CMOS 招待有り査読有り

S. Takeuchi, Y. Shimura, T. Nishimura, B. Vincent, G. Eneman, T. Clarysse, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, and S. Zaima

Solid-State Electronics 60 巻 ( 1 ) 頁： 53-57 2011年6月

Control of Interfacial Properties of Pr-oxide/Ge Gate Stack Structure by Introduction of Nitrogen 査読有り

K. Kato, H. Kondo, M. Sakashita, O. Nakatsuka, and S. Zaima

Solid-State Electronics 60 巻 ( 1 ) 頁： 70-74 2011年6月

Control of Strain Relaxation Behavior of Ge1-xSnx Layers 査読有り

Y. Shimura, S. Takeuchi, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima

Solid-State Electronics 60 巻 ( 1 ) 頁： 84-88 2011年6月

Crystalline orientation dependence of electrical properties of Mn Germanide/Ge(1 1 1) and (0 0 1) Schottky contacts 査読有り

T. Nishimura, O. Nakatsuka, S. Akimoto, W. Takeuchi, and S. Zaima

Microelectron. Eng. 88 巻 ( 5 ) 頁： 605-609 2011年5月

Characterization of Local Strain around Through-Silicon Via Interconnects by using X-ray Microdiffraction 査読有り

O. Nakatsuka, H. Kitada, Y. S. Kim, Y. Mizushima, T. Nakamura, T. Ohba, and S. Zaima

pn. J. Appl. Phys. 50 巻頁： 05ED03 2011年5月

Formation of Palladium Silicide Thin Layers on Si(110) Substrates 査読有り

R. Suryana, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys. 50 巻頁： 05EA09 2011年5月

Molecular beam deposition of Al2O3 on p-Ge(001)/Ge0.95Sn0.05 heterostructure and impact of a Ge-cap interfacial layer 査読有り

C. Merckling, X. Sun, Y. Shimura, A. Franquet, B. Vincent, S. Takeuchi, W. Vandervorst, O. Nakatsuka, S. Zaima, R. Loo, and M. Caymax

Appl. Phys. Lett. 98 巻頁： 192110 2011年5月

Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors 査読有り

B. Vincent, Y. Shimura, S. Takeuchi, T. Nishimura, G. Eneman, A. Firrincieli, J. Demeulemeester, A. Vantomme, T. Clarysse, O. Nakatsuka, S. Zaima, J. Dekoster, M. Caymax, and R. Loo

,Microelectron. Eng. 88 巻 ( 4 ) 頁： 342-346 2011年4月

Analysis of Local Leakage Current of Pr Oxide Thin Films with Conductive Atomic Force Microscopy 査読有り

M. Adachi, M. Sakashita, H. Kondo, W. Takeuchi, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys. 50 巻頁： 04DA08 2011年4月

Effect of Pr Valence State on Interfacial Structure and Electrical Properties of Pr-oxide/PrON/Ge Gate Stack Structure 査読有り

K. Kato, M. Sakashita, W. Takeuchi, H. Kondo, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys. 50 巻頁： 04DA17 2011年4月

Pr酸化膜/Si構造へのAl導入による界面反応抑制効果

古田和也, 竹内和歌奈, 加藤公彦, 坂下満男, 近藤博基, 中塚理, 財満鎭明

特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”（第16回研究会頁： 51-54 2011年1月

電流検出型原子間力顕微鏡を用いた欠陥に起因するPr酸化膜のリーク電流機構の解明

足立正樹, 加藤雄三, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明

特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”（第16回研究会頁： 123-126 2011年1月

Pr酸化膜/PrON/Ge構造におけるPrの化学結合状態が電気的特性に及ぼす影響

加藤公彦, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明

特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”（第16回研究会頁： 99-102 2011年1月

Al2O3界面層およびラジカル窒化法によるHigh-k/Ge界面構造および電気的特性の制御

加藤公彦, 京極真也, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明

特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”（第16回研究会頁： 55-58 2011年1月

GeSn Technology: Impact of Sn on Ge CMOS Applications 招待有り査読有り

S. Zaima, O. Nakatsuka, Y. Shimura, S. Takeuchi, B. Vincent, F. Gencarelli, T. Clarysse, J. Demeulemeester, K. Temst, A. Vantomme, M. Caymax, and R. Loo

ECS Trans. 41 巻 ( 7 ) 頁： 231-238 2011年

Low temperature growth of Ge1-xSnx buffer layers for tensile-strained Ge layers 査読有り

Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, S. Zaima

Thin Solid Films 518 巻 ( 6 ) 頁： S2-S5 2010年

Formation of Palladium Silicide on Heavily Doped Si(001) Substrates Using Ti Intermediate Layer 査読有り

R. Suruyana, O. Nakatsuka, S. Zaima

Jpn. J. Appl. Phys. 49 巻頁： 05FA09 (5 pages) 2010年

Mobility Behavior of Ge1-xSnx Layers Grown on Silicon-on-Insulator Substrates 査読有り

O. Nakatsuka, N. Tsutsui, Y. Shimura, S. Takeuchi, A. Sakai, S. Zaima

Jpn. J. Appl. Phys. 49 巻頁： 04DA10 (4 pages) 2010年

Structural change of direct silicon bonding substrates by interfacial oxide out-diffusion annealing 査読有り

T. Kato, Y. Nakamura, J. Kikkawa, A. Sakai, E. Toyoda, K. Izunome, O. Nakatsuka, S. Zaima, Y. Imai, S. Kimura, O. Sakata

Thin Solid Films 518 巻 ( 6 ) 頁： S147-W150 2010年

Novel Method to Introduce Uniaxial Tensile Strain in Ge by Microfabrication of Ge/Si1-xGex Structures on Si(001) Substrates 査読有り

T. Mizutani, O. Nakatsuka, A. Sakai, H. Kondo, M. Ogawa, and S. Zaima

Solid-State Electronics 53 巻 ( 11 ) 頁： 1198-1201 2009年11月

Microstructures in directly bonded Si substrates 査読有り

Y. Ohara, T. Ueda, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima, E. Toyoda, H. Isogai, T. Senda, K. Izunome, H. Tajiri, O. Sakata, S. Kimura, T. Sakata, H. Mori

Solid-State Electronics 53 巻 ( 8 ) 頁： 837-840 2009年8月

Control of Sn Precipitation and Strain Relaxation in Compositionally Step-Graded Ge1-xSnx Buffer Layers for Tensile-Strained Ge Layers 査読有り

Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima

Jpn. J. Appl. Phys. 48 48 巻頁： 04C130 2009年4月

Characterization and Analyses of Interface Structures in Directly Bonded Si(011)/Si(001) Substrates 査読有り

E. Toyoda, A. Sakai, H. Isogai, T. Senda, K. Izunome, K. Omote, O. Nakatsuka, S. Zaima

Jpn. J. Appl. Phys. 48 巻頁： 021208 2009年2月

記述言語：英語掲載種別：研究論文（学術雑誌）

We investigated the interface structure of directly bonded Si(011)/Si(001) substrates prepared by conventional bonding and grind-back. The interfacial structure was analyzed by transmission electron microscopy (TEM) and in-plane X-ray diffraction (XRD). The plan-view and cross-sectional TEM observations provided evidence that screw dislocation lines were localized to the interfacial plane and that threading dislocations were absent. Grazing-incidence in-plane XRD analyses confirmed the existence of mosaic structures at the interface. These structures were formed because of the deformation field produced by the screw dislocations. This allowed a high level of crystallinity to be maintained in regions away from the interface in both the Si(011) layer and the Si(001) wafer.

Mechanical Properties and Chemical Reactions at the Directly Bonded Si-Si Interface 査読有り

E. Toyoda, A. Sakai, T. Senda, H. Isogai, K. Izunome, O. Nakatsuka, M. Ogawa, S. Zaim

Jpn. J. Appl. Phys. 48 巻頁： 011202-1-5 2009年1月

記述言語：英語掲載種別：研究論文（学術雑誌）

Directly bonded interfaces of hydrophilic and hydrophobic Si(100) wafers were studied from the viewpoint of bonding energy and chemical products as a function of the annealing temperature. The experimental results indicated that for both hydrophilic and hydrophobic Si/Si bonded wafer pairs, the behavior of the bubbles at the bonding interface and the bonding energy were closely related to the behavior of the hydrogen and oxygen atoms at the bonding interface. The bonding mechanisms for both cases have been discussed on the basis of the chemical reactions induced by the annealing temperature.

Control of Dislocations and Sn Precipitations for Fabrication of Tensile-strained Ge on Ge1-xSnx Buffer Layer 査読有り

Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima

Trans. MRS-J 34 巻 ( 2 ) 頁： 301-304 2009年

Plasma surface treatment of polymers with inductivity-coupled RF plasmas driven by low-inductance antenna units 査読有り

Y. Setsuhara, K. Cho, K. Takenaka, A. Ebe, M. Shiratani, M. Sekine, M. Hori, E. Ikenaga, H. Kondo, O. Nakatsuka, S. Zaima

Thin Solid Films 518 巻 ( 3 ) 頁： 1006-1011 2009年

Ferromagnetism and Electronic structures of Nonstoichiometric Heusler-Alloy Fe3-xMnxSi Epilayers Grown on Ge(111) 査読有り

K. Hamaya, H. Itoh, O. Nakatsuka, K. Ueda, K. Yamamoto, M. Itakura, T. Taniyama, T. Ono, M. Miyao

Phys. Rev. Lett. 102 巻頁： 137204 (4 pages) 2009年

Formation of Uniaxial Tensile-strained Ge by Using Micro-patterning of Ge/Si1-xGe x/Si Structures 査読有り

T. Mizutani, O. Nakatsuka, A. Sakai, H. Kondo, and S. Zaima

Trans. MRS-J 34 巻 ( 2 ) 頁： 305-308 2009年

*Silicide and germanide technology for contacts and gates in MOSFET applications 招待有り査読有り

S. Zaima, O. Nakatsuka, H. Kondo, M. Sakashita, A. Sakai, and M. Ogawa

Thin Solid Films 517 巻 ( 1 ) 頁： 80-83 2008年8月

Characterization of bonding structures of directly bonded hybrid crystal orientation substrates 査読有り

E. Toyoda, A. Sakai, O. Nakatsuka, H. Isogai, T. Senda, K. Izunome, M. Ogawa, and S. Zaima

Thin Solid Films 517 巻 ( 1 ) 頁： 323-326 2008年8月

Tensile strained Ge layers on strain-relaxed Ge1-xSnx/virtual Ge substrates 査読有り

S. Takeuchi, A. Sakai, O. Nakatsuka, M. Ogawa, and S. Zaima

Thin Solid Films 517 巻 ( 1 ) 頁： 159-162 2008年8月

Growth of highly strain-relaxed Ge1-xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method 査読有り

S. Takeuchi, Y. Shimura, O. Nakatsuka, S. Zaima, M. Ogawa, and A. Sakai

Appl. Phys. Lett. 92 巻頁： 231916 2008年6月

Epitaxial Ag Layers on Si Substrates as a Buffer Layer for Carbon Nanotube Growth 査読有り

S. Oida, A. Sakai, O. Nakatsuka, M. Ogawa, and S. Zaima

Appl. Surf. Sci. 47 巻頁： 3742-3747 2008年5月

Dependence of Electrical Characteristics on Interfacial Structures of Epitaxial NiSi2/Si Schottky Contacts Formed from Ni/Ti/Si System 査読有り

O. Nakatsuka, A. Suzuki, S. Akimoto, A. Sakai, M. Ogawa and S. Zaima

Jpn. J. Appl. Phys. 47 巻 ( 4 ) 頁： 2402-2406 2008年4月

Scanning Tunneling Microscopy Observation of Initial Growth of Sn and Ge1-xSnx Layers on Ge(001) Substrates 査読有り

M. Yamazaki, S. Takeuchi, O. Nakatsuka, A. Sakai, M. Ogawa, and S. Zaima

Appl. Surf. Sci. 254 巻 ( 19 ) 頁： 6048-60651 2008年3月

Effect of alcohol sources on synthesis of single-walled carbon nanotubes 査読有り

S. Oida, A. Sakai, O. Nakatsuka, M. Ogawa and S. Zaima

Appl. Surf. Sci. 254 巻 ( 23 ) 頁： 7697-7702 2008年2月

Ge基板上に作製したPr酸化膜の評価査読有り

坂下満男, 鬼頭伸幸, 加藤亮祐, 近藤博基, 中塚理, 酒井朗, 小川正毅, 財満鎭明

特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”（第13回研究会）頁： 237-242 2008年2月

Contact properties of epitaxial NiSi2/heavily doped Si structures formed from Ni/Ti/Si systems 査読有り

S. Akimoto, O. Nakatsuka, A. Suzuki, A. Sakai, M. Ogawa, S. Zaima

Advanced Metallization Conference (AMC) 頁： 101-105 2008年

Interface and defect control for group IV channel engineering

A. Sakai, Y. Ohara, T. Ueda, E. Toyoda, K. Izunome, S. Takeuchi, Y. Shimura, O. Nakatsuka, M. Ogawa, S. Zaima, S. Kimura

ECS Transactions 16 巻 ( 10 ) 頁： 687-698 2008年

パルスレーザー蒸着法によるGe基板上へのPr酸化膜の作製とその構造及び電気的特性評価

鬼頭伸幸, 坂下満男, 酒井朗, 中塚理, 近藤博基, 小川正毅, 財満鎭明

特別研究会研究報告“ゲートスタック研究会 –材料・プロセス・評価の物理-”（第12回研究会）頁： 251-256 2007年2月

Strain relaxation of patterned Ge and SiGe layers on Si(001) substrates

S. Mochizuki, A. Sakai, O. Nakatsuka, H. Kondo, K. Yukawa, K. Izunome, T. Senda, E. Toyoda, M. Ogawa, and S. Zaima

Semicond. Sci. Tech. 22 巻 ( 1 ) 頁： S132-S136 2007年1月

記述言語：英語掲載種別：研究論文（学術雑誌）

We have investigated dislocation morphology and strain relaxation mechanisms of SiGe and Ge sub-micron wide striped mesa lines patterned on Si(0 0 1) substrates. The patterning of SiGe and Ge layers principally leads to asymmetric elastic strain relaxation. Post-patterning anneal induces 60° dislocation introduction to relax the strain but the narrower the line width the more dominant is the elastic strain relaxation. In the case of 250 nm wide SiGe lines, 60° dislocation introduction along the line is critically suppressed so that asymmetric strain distribution is realized. On the other hand, for the Ge line structure, pre-formed pure edge dislocations elongate along both orthogonal directions at the heterointerface independent of the line geometry even with the line width of 250 nm. Thus strain relaxation occurs symmetrically and rigidly. These results can be explained by deference of the introduction and propagation mechanisms of 60° and pure-edge dislocations.

Ge(001)表面の酸素エッチングおよび初期酸化過程の原子スケール評価

山崎理弘, 若園恭伸, 酒井朗, 中塚理, 竹内正太郎, 小川正毅, 財満鎭明

特別研究会研究報告“ゲートスタック研究会 –材料・プロセス・評価の物理-”（第12回研究会）頁： 197-202 2007年1月

Growth and structure evaluation of strain-relaxed Ge1-xSnx buffer layers grown on various types of substrates 査読有り

S. Takeuchi, A. Sakai, K. Yamamoto, O. Nakatsuka, M. Ogawa, and S. Zaima

Semicond. Sci. Tech. 22 巻 ( 1 ) 頁： S231-S235 2007年1月

記述言語：英語掲載種別：研究論文（学術雑誌）

We have performed growth and structure evaluation of strain-relaxed Ge1-xSnx buffer layers grown on Si(0 0 1), virtual Ge(0 0 1) and bulk Ge(0 0 1) substrates. In the case of Si(0 0 1), amorphous Ge1-xSnx phases are partially formed as well as many threading dislocations in Ge0.98Sn0.02 layers. Employing virtual Ge substrates to reduce the lattice mismatch at the interface leads to epitaxial Ge0.978Sn0.022 layers with a flat surface. Most of threading dislocations in the Ge0.978Sn0.022 layer comes from pre-existing ones in the virtual Ge substrate and propagates laterally, leaving misfit segments at the Ge0.978Sn0.022/virtual Ge interface, after post-deposition annealing (PDA). This simultaneously results in the reduction of threading dislocation density and the promotion of strain relaxation. In the case of bulk Ge(0 0 1), although low threading dislocation density can be achieved, less than 106 cm-2, the film exhibits surface undulation and a lesser degree of strain relaxation even after PDA.

Silicide and germanide technology for contacts and metal gates in MOSFET applications

S. Zaima, O. Nakatsuka, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa

ECS Transactions 11 巻 ( 6 ) 頁： 197-205 2007年

Impact of Pt incorporation on thermal stability of NiGe layers on Ge(001) substrates

O. Nakatsuka, A. Suzuki, A. Sakai, M. Ogawa, S. Zaima

Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007 頁： 87-88 2007年

Electrical properties of epitaxial NiSi2/Si contacts with extremely flat interface formed in Ni/Ti/Si(0 0 1) system 査読有り

O. Nakatsuka, A. Suzuki, A. Sakai, M. Ogawa, and S. Zaima

Microelectron. Eng. 83 巻 ( 11-12 ) 頁： 2272-2276 2006年11月

Ni-Silicide/Si and SiGe(C) Contact Technology for ULSI Applications 招待有り

O. Nakastuka, S. Zaima, A. Sakai, and M. Ogawa

Proceedings of the 14th annual IEEE International Conference on Advanced Thermal Processing of Semiconductors 頁： 31-37 2006年10月

Control of misfit dislocations in strain-relaxed SiGe buffer layers on SOI substrates 査読有り

N. Taoka, A. Sakai, S. Mochizuki, O. Nakatsuka, M. Ogawa and S. Zaima

Thin Solid Films 508 巻 ( 1-2 ) 頁： 147-151 2006年6月

記述言語：英語掲載種別：研究論文（学術雑誌）

A thin strain-relaxed SiGe buffer layer with pure-edge dislocations has been grown on a silicon-on-insulator (SOI) substrate by using low-temperature epitaxy of Ge and subsequent high-temperature annealing. The dislocation morphology and crystalline mosaicity of the strain-relaxed SiGe layers has been measured, and the influence of the thickness of the SiGe and SOI layers on these features has been investigated. Behavior of the dislocations introduced from the interface between the SiGe and the buried oxide layers during high-temperature annealing shows a high dependence on the thickness of the SOI layer. This SOI thickness dependence can be explained by considering the effects of the image force exerted on the dislocations. A higher temperature anneal and a thinner SOI layer are both found to reduce the crystalline mosaicity.

*Local strain in SiGe/Si heterostructures analyzed by X-ray microdiffraction 査読有り

S. Mochizuki, A. Sakai, N. Taoka, O. Nakatsuka, S. Takeda, S. Kimura, M. Ogawa, and S. Zaima

Thin Solid Films 508 巻 ( 1-2 ) 頁： 128-131 2006年6月

記述言語：英語掲載種別：研究論文（学術雑誌）

We have investigated, using X-ray microdiffraction, local strain and crystalline texture in SiGe layers fabricated under various growth conditions on Si(001) substrates. Two-dimensional reciprocal space maps and contour maps in a series of the X-ray rocking curves were taken from the SiGe layers with misfit dislocations having either a 60 degrees or pure-edge character. Quantitative analysis for fine structures observed in the diffraction peak revealed that crystal domains with sizes ranging from 50 nm to 200 nm at tilt angles from 0.00 degrees to 0.42 degrees with respect to the Si[001] direction are formed in the layer relaxed with 60 degrees dislocations. Furthermore, nonuniformity of crystalline texture having a size of 2 to 4 μm was also detected. On the other hand, no remarkable domain structures were detected from diffraction profiles when the sample is predominantly strain-relaxed by pure-edge dislocations. In this case, homogeneous strain distribution with reduced mosaicity is realized in the micrometer-sized regions.

Initial Growth Process of TiN Films in Ultrahigh-Vacuum Rapid Thermal Chemical Vapor Deposition 査読有り

Y. Okuda, S. Naito, O. Nakatsuka, H. Kondo, T. Okuhara, A. Sakai, S. Zaima, and Y. Yasuda

Jpn. J. Appl. Phys. 45 巻 ( 1A ) 頁： 49-53 2006年1月

記述言語：英語掲載種別：研究論文（学術雑誌）

We have investigated the crystalline and electrical properties of Ni silicide/Si and SiGeC contacts for ULSI applications. NiSi/Si contacts promises the contact resistivity as low as 10-8 ohm-cm2 for both n+- and p+-Si. Degradation of the sheet resistance of NiSi layers critically depends on the annealing time particularly at temperatures ranging from 650 deg.C to 750 deg.C. The enlargement of the Si-exposed region concomitant with the NiSi agglomeration is a dominant factor responsible for the increase in sheet resistance and the activation energy of this process is estimated to be 2.8±0.4 eV. Incorporation of Ge into Ni/Si systems is effective in raising the transformation temperature from NiSi to NiSi2. Incorporation of C into NiSi/Si system effectively suppresses the NiSi agglomeration. C introduction also causes the pile-up of B atoms at the NiSi/Si interface, which promises the reduction of the contact resistivity.

Dislocation morphology and crystalline mosaicity in strain-relaxed SiGe buffer layers on SOI

A. Sakai, N. Taoka, O. Nakatsuka, M. Ogawa, S. Zaima

IEEJ Transactions on Electronics, Information and Systems 126 巻 ( 9 ) 頁： 1083-1087 2006年

Ni silicide and germanide technology for contacts and metal gates in MOSFET applications

S. Zaima, O. Nakatsuka, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings 頁： 322-325 2006年

Scanning tunneling microscopy study on the reaction of oxygen with clean Ge(001) surfaces

A. Sakai, Y. Wakazono, O. Nakatsuka, S. Zaima, M. Ogawa

ECS Transactions 2 巻 ( 7 ) 頁： 1197-1203 2006年

Thermal stability and electrical properties of Ni-silicide on C-incorporated Si 査読有り

O. Nakatsuka, K. Okubo, A. Sakai, M. Ogawa, S. Zaima, J. Murota, and Y. Yasuda

Proc. of Advanced Metallization Conference 2004 (AMC2004) 頁： 293-298 2005年10月

*Low Temperature Formation of Epitaxial NiSi2 Layers with Solid-Phase Reaction in Ni/Ti/Si(001) Systems 査読有り

O. Nakatsuka, K. Okubo, Y. Tsuchiya, A. Sakai, S. Zaima, and Y. Yasuda

Jpn. J. Appl. Phys. 44 巻 ( 5A ) 頁： 2945-2947 2005年

担当区分：筆頭著者記述言語：英語掲載種別：研究論文（学術雑誌）

The solid-phase epitaxial growth of NiSi2 in Ni/Ti/Si systems has been investigated. Continuous epitaxial NiSi2 layers consisting of pyramidal domains with {111} facets at the Ni-silicide/Si interface can be formed by annealing at a temperature (350 deg.C) lower than that for conventional Ni/Si systems. This NiSi2 layer is transformed to a uniform epitaxial NiSi2 layer with an atomically flat silicide/Si interface by additional annealing at 850deg.C, while the {111} facets at the NiSi2/Si interface remains in the Ni/Si system under the same annealing conditions. Moreover, the epitaxial NiSi2 layer formed at 350 deg.C exhibits a high thermal robustness even after annealing at higher than 750 deg.C, in contrast to the polycrystalline NiSi layer.

SiGeバッファ層の歪緩和および転位構造制御査読有り

田岡紀之, 酒井朗, 望月省吾, 中塚理, 小川正毅, 財満鎭明

日本結晶成長学会誌 32 巻頁： 89-98 2005年

Analysis of microstructures in SiGe buffer layers on silicon-on-insulator substrates 査読有り

N. Taoka, A. Sakai, S. Mochizuki, O. Nakatsuka, M. Ogawa, S. Zaima, T. Tezuka, N. Sugiyama, and S. Takagi

Jpn. J. Appl. Phys. 44 巻 ( 10 ) 頁： 7356-7363 2005年

*Improvement in NiSi/Si contact properties with C-implantation 査読有り

O. Nakatsuka, K. Okubo, A. Sakai, M. Ogawa, Y. Yasuda, and S. Zaima

Microelectronic Engineering 82 巻 ( 3-4 ) 頁： 479-484 2005年

Pure-edge dislocation network for strain-relaxed SiGe/Si(001) systems 査読有り

A. Sakai, N. Taoka, O. Nakatsuka, S. Zaima, and Yukio Yasuda

Appl. Phys. Lett. 86 巻頁： 221916-221918 2005年

Initial growth behaviors of SiGeC in SiGe and C alternate deposition 査読有り

S. Takeuchi, O. Nakatsuka, Y. Wakazono, A. Sakai, S. Zaima, and Y. Yasuda

Materials Science in Semiconductor Processing 8 巻 ( 1-3 ) 頁： 5-9 2005年

Growth and characterization of strain-relaxed SiGe buffer layers on Si(001) substrates with pure-edge misfit dislocations 査読有り

N. Taoka, A. Sakai, T. Egawa, O. Nakatsuka, S. Zaima, and Y. Yasuda

Materials Science in Semiconductor Processing 8 巻 ( 1-3 ) 頁： 131-135 2005年

Influence of structural variation of Ni silicide thin films on electrical property for contact materials 査読有り

K. Okubo, Y. Tsuchiya, O. Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda

Jpn. J. Appl. Phys. 43 巻 ( 4B ) 頁： 1896-1900 2004年

Strain-relaxation mechanisms of SiGe layers formed by two-step growth on Si(0 0 1) substrates 査読有り

T. Egawa, A. Sakai, T. Yamamoto, N. Taoka, O. Nakatsuka, S. Zaima and Y. Yasuda

Appl. Surf. Sci. 224 巻 ( 1-4 ) 頁： 104-107 2004年

Dislocation structures and strain-relaxation in SiGe buffer layers on Si (0 0 1) substrates with an ultra-thin Ge interlayer 査読有り

T. Yamamoto, A. Sakai, T. Egawa, N. Taoka, O. Nakatsuka, S. Zaima, and Y. Yasuda,

Appl. Surf. Sci. 224 巻 ( 1-4 ) 頁： 108-112 2004年

Si及びSi1-x-yGexCy上のNiシリサイド形成招待有り

中塚理, 酒井朗, 財満鎭明

電気学会研究会資料電子材料研究会 EFM-04 巻 ( 41-48 ) 頁： 25-30 2004年

Influence of C incorporation on the initial growth of epitaxial NiSi2 on Si(100) 査読有り

E. Okada, O. Nakatsuka, S. Oida, A. Sakai, S. Zaima, and Y. Yasuda

Appl. Surf. Sci. 237 巻 ( 1-4 ) 頁： 150-155 2004年

記述言語：英語掲載種別：研究論文（学術雑誌）

The initial growth of NiSi2 on Si(1 0 0) surfaces with a thin C layer by scanning tunneling microscopy has been investigated. The surface roughening with the formation of epitaxial NiSi2 domains is effectively suppressed even by the introduction of a submonolayer thick C layer. The reduction of an average size of epitaxial NiSi2 islands and the increase in the nucleation density of NiSi2 islands are caused by incorporating of C atoms into the surface before the 4.8-monolayer thick Ni deposition. The adsorption condition of C atoms on the surface more strongly influences the density and the average size of epitaxial NiSi2 islands rather than the total amount of deposited C atoms does.

Interfacial reaction and electrical properties in Ni/Si and Ni/SiGe(C) contacts 査読有り

S. Zaima, O. Nakatsuka, A. Sakai, J. Murota, and Y. Yasuda

Appl. Surf. Sci. 224 巻 ( 1-4 ) 頁： 215-221 2004年

記述言語：英語掲載種別：研究論文（学術雑誌）

We have investigated the interfacial solid-phase reaction and electrical properties of Ni/Si and Ni/SiGeC systems with various Ge and C compositions. The incorporation of Ge into Si substrates raised the transition temperature from the NiSi phase to the NiSi2 phase. The incorporation of C effectively suppresses the agglomeration of NiSi and the formation of {1 1 1} facets at NiSi2/Si interface, which provides the low sheet resistance even after high temperature annealing. NiSi/Si systems show the contact resistivity as low as 1E-8 Ω sq.cm for both n+- and p+-type contacts. This is accounted by the pile-up of P at the NiSi/Si interface for n+-type and the low Schottky barrier height for p+-type contact. The pile-up of B at the NiSi/p+-Si0.996C0.004 interface after the annealing at 750deg.C is also found.

Influence of Si1-xGex interlayer on the initial growth of SiGeC on Si(100) 査読有り

S. Ariyoshi, S. Takeuchi, O. Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda

Appl. Surf. Sci. 224 巻 ( 1-4 ) 頁： 117-121 2004年

High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high k insulator systems 査読有り

K. Kobayashi, M. Yabashi, Y. Takata, T. Tokushima, S. Shin, K. Tamasaku, D. Miwa, T. Ishikawa, H. Nohira, T. Hattori, Y. Sugita, O. Nakatsuka, A. Sakai, and S. Zaima

Appl. Phys. Lett. 83 巻 ( 5 ) 頁： 1005-1007 2003年

Development of Ni/Al and MUM ohmic contact materials for p-type 4H-SiC 査読有り

R. Konishi, R. Yasukochi, O. Nakatsuka, Y. Koide, M. Moriyama and M. Murakami

Mater. Sci. Eng. B 98 巻 ( 3 ) 頁： 286-293 2003年

Effect of Al interlayers on Two-Step Epitaxial Growth of CoSi2 on Si(100) 査読有り

O. Nakatsuka, H. Onoda , E. Okada, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda

Appl. Surf. Sci. 216 巻 ( 1-4 ) 頁： 174-180 2003年

Ultra-high vacuum rapid thermal chemical vapor deposition for formation of TiN as barrier metals 査読有り

S. Naito, M. Okada, O. Nakatsuka, T. Okuhara, A. Sakai, S. Zaima, and Y. Yasuda,

Rapid Thermal Processing for Future Semiconductor Devices 頁： 29-35 2003年

Scanning Tunneling Microscopy of Initial Nitridation Processes on Oxidized Si(100) Surface with Radical Nitrogen 査読有り

R. Takahashi, Y. Kobayashi, H. Ikeda, M. Sakashita, O. Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda

Jpn. J. Appl. Phys. 42 巻 ( 4B ) 頁： 1966-1970 2003年

Electrical properties and solid-phase reactions in Ni/Si(100) contacts 査読有り

Y. Tsuchiya, A. Tobioka, O. Nakatsuka, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda

Jpn. J. Appl. Phys. 41 巻 ( 4B ) 頁： 2450-2454 2002年

Low resistance TiAl ohmic contacts with multi-layered structure for p-type 4H-SiC 査読有り

O. Nakatsuka, T. Takei, Y. Koide, and M. Murakami

Mater. Trans. 43 巻 ( 7 ) 頁： 1684-1688 2002年

CoAl ohmic contact materials with improved surface morphology for p-type 4H-SiC 査読有り

O. Nakatsuka, Y. Koide, and M. Murakami

Proc. of Silicon Carbide and Related Materials 2001 (MATERIALS SCIENCE FORUM) 389 巻 ( 3 ) 頁： 885-888 2002年

Electrical properties of Ni silicide/Si contact 査読有り

Y. Tsuchiya, O. Nakatsuka, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda

Proc. of Advanced Metallization Conference 2001 (AMC2001) 頁： 679-684 2001年

Dependence of contact resistivity on impurity concentration in Co/Si systems 査読有り

O. Nakatsuka, T. Ashizawa, K. Nakai, A. Tobioka, A. Sakai, S. Zaima, and Y. Yasuda

Appl. Surf. Sci. 159-160 巻頁： 149-153 2000年

Interfacial reactions of Ti/ and Zr/Si1-xGex/Si contacts with rapid thermal annealing 招待有り査読有り

Y. Yasuda, O. Nakatsuka, and S. Zaima

Thin Solid Films 373 巻頁： 73-78 2000年

Contact resistivities and electrical properties of Co/Si contacts by rapid thermal annealing 査読有り

O. Nakatsuka, T. Ashizawa, H. Iwano, S. Zaima, and Y. Yasuda

Proc. of Advanced Metallization and Interconnect Systems for ULSI Applications in 1998 頁： 605-611 1999年

Effect of Ge atoms on interfacial reactions of Ti/ and Zr/Si1-xGex/Si contacts 査読有り

H. Iwano, H. Hayashi, M. Yoshinaga, O. Nakatsuka, S. Zaima, and Y. Yasuda

Proc. of Advanced Metallization and Interconnect Systems for ULSI Applications in 1998 頁： 599-604 1999年

Conductance oscillations in hopping conduction systems fabricated by focus ion beam implantation 査読有り

H. Kondo, H. Iwano, O. Nakatsuka, K. Kaga, S. Zaima, and Y Yasuda

Jpn. J. Appl. Phys. 36 巻 ( 6B ) 頁： 4046-4048 1997年

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