Presentations -
-
NiSiドット/Si量子ドット積層ハイブリッドフローティングゲートMOSキャパシタにおける電子注入・放出特性
松本龍児、池田弥央、牧原克典、島ノ江和広、東清一郎、宮崎誠一
第55回春季応用物理学会
-
リモート水素プラズマ支援によるPd ナノドット形成
島ノ江和広、牧原克典、池田弥央、松本龍児、東清一郎、宮崎誠一
第55回春季応用物理学会
-
リモート水素プラズマ支援により形成したNiシリサイドナノドットの化学結合状態および電子状態評価
牧原克典、大田晃生、松本龍児、池田弥央、島ノ江和広、東清一郎、宮崎誠一
第55回春季応用物理学会
-
AFM/KFMによる高密度Ptシリサイドナノドットの帯電状態計測
西原良祐、牧原克典、池田弥央、松本龍児、東清一郎、宮崎誠一
第55回春季応用物理学会
-
Charge Injection Characteristics of NiSi-Dots/Silicon-Quantum-Dots Stacked Floating Gate in MOS Capacitors International conference
M. Ikeda, R. Matsumoto, K. Shimanoe, T. Okada, K. Makihara, S. Higashi and S. Miyazaki
3rd International Workshop in New Group IV Semiconductor Nanoelectronics
-
Characterization of Electronic Charged States of Nickel Silicide Nanodots Using AFM/Kelvin Probe Technique International conference
R. Nishihara, K. Makihara, Y. Kawaguchi, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki
The Sixth Pacific Rim International Conference on Advanced Materials and Processing
-
High Rate Growth of Highly-Crystallized Ge Films on Quartz from VHF Inductively-Coupled Plasma of GeH4 + H2 International conference
T. Sakata, K. Makihara, H. Deki, S. Higashi and S. Miyazaki
The Sixth Pacific Rim International Conference on Advanced Materials and Processing
-
Formation of PtSi Nanodots Induced by Remote H2 Plasma International conference
K. Shimanoe, K. Makihara, A. Ohta, M. Ikeda, S. Higashi and S. Miyazaki
3rd International Workshop in New Group IV Semiconductor Nanoelectronics
-
High Rate Growth of Crystalline Ge Films at Low Temperatures by Controlling 60MHz Inductively-Coupled Plasma of H2-diluted GeH4 International conference
S. Miyazaki, T. Sakata, K. Makihara, M. Ikeda
3rd International Workshop in New Group IV Semiconductor Nanoelectronics
-
Formation of Pt Nanodots Induced by Remote Hydrogen Plasma International conference
The 18th Symposium of The Materials Research Society of Japan
-
Electroluminescence from Multiple-Stacked Structures of Impurity Doped Si Quantum Dots International conference
2007 International Conference on Solid State Devices and Materials
-
Self-Assembling Formation of Ninanodots on SiO2 Induced by Remote H2-Plasma Treatment and Their Electrical Charging Characteristics International conference
2007 International Conference on Solid State Devices and Materials
-
NiSiドット/Si量子ドット積層構造フローティングゲートMOSキャパシタにおける電荷注入特性
松本龍児、池田弥央、牧原克典、岡田竜弥、島ノ江和広、東清一郎、宮崎誠一
第68回秋季応用物理学会
-
リモート水素プラズマ処理によるPtナノドット密度制御
島ノ江和広、牧原克典、池田弥央、東清一郎、宮崎誠一
第68回秋季応用物理学会
-
Phosphorus Doping to Si Quantum Dots for Floating Gate Application International conference
K. Makihara, M. Ikeda, A. Ohta, H. Murakami, R. Matsumoto, E. Ikenaga, M. Kobata, J. Kim, S. Higashi and S. Miyazaki
2007 Silicon Nanoelectronics Workshop
-
Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO2 Structure as Evaluated by AFM/KFM International conference
K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki
2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
-
Impact of Boron Doping to Si Quantum Dots on Light Emission Properties International conference
K. Okuyama, K. Makihara, A. Ohta, H. Murakami, M. Ikeda, S. Higashi and S. Miyazaki
2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
-
Formation of Ni Nanodots Induced by Remote Hydrogen Plasma International conference
K. Makihara, K. Shimanoe, Y. Kawaguchi, M. Ikeda, S. Higashi and S. Miyazaki
The European Materials Research Society 2007 Spring Meeting
-
Impact of impurity Doping into Si Quantum Dots with Ge Core on Their Electrical Charging Characteristics International conference
K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki
5th International Conference on Silicon Epitaxy and Heterostructures
-
Low Temperature High-rate Growth of Crystalline Ge Films on Quartz and Crystalline Si Substrates from VHF Inductively-Coupled Plasma of GeH4 International conference
T. Sakata, K. Makihara, H. Deki, S. Higashi and S. Miyazaki
5th International Conference on Silicon Epitaxy and Heterostructures