Presentations -
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Charge Storage and Optical Response of Hybrid Nanodots Floating Gate For Functional Memories International conference
2009 MRS Fall Meeting,
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Charge Injection Characteristics of NiSi-Nanodots/Silicon-Quantum-Dots Hybrid Floating Gate in MOS Structures International conference
M. Ikeda, S. Nakanishi, M. Morisawa, K. Makihara and S. Miyazaki
2009 International Microprocesses and Nanotechnology Conference
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Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO2 International conference
K. Makihara, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki
214th Electrochemical Society Meeting : SiGe & Ge Materials, Processing and Device Symposium
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New Tunneling Model with Dependency of Temperature Measured in Si Nano-Dot Floating Gate MOS Capacitor International conference
M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi and T. Endoh
2009 International Conference on Solid State Devices and Materials
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Light Induced Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid FG in MOS Structure International conference
N. Morisawa, M. Ikeda, S. Nakanishi, A. Kawanami, K. Makihara and S. Miyazaki
2009 International Conference on Solid State Devices and Materials
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Formation of Cobalt and Cobalt-silicide Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasma International conference
A. Kawanami, K. Makihara, M. Ikeda and S. Miyazaki
International Symposium on Dry Process
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リモート水素プラズマ支援による表面Pt被覆したa-Ge薄膜の局所結晶化
宮崎佑介、牧原克典、川浪彰、岡田竜也、池田弥央、東清一郎、宮崎誠一
第70回秋季応用物理学会
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表面前処理がリモート水素プラズマ支援金属マイグレーションに及ぼす影響
川浪彰、牧原克典、池田弥央、東清一郎、宮崎誠一
第70回秋季応用物理学会
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リモート水素プラズマ支援によるCoおよびCoシリサイドナノドット形成
川浪彰、牧原克典、池田弥央、東清一郎、宮崎誠一
第70回秋季応用物理学会
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Si量子ドット/NiSiナノドットハイブリッド積層FG-MOS構造における光誘起電荷移動
森澤直也、池田弥央、中西翔、川浪彰、牧原克典、東清一郎、宮崎誠一
第70回秋季応用物理学会
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NiSiナノドット/Si量子ドット積層ハイブリッドフローティングゲートにおける電荷注入・放出特性
中西翔、池田弥央、森澤直也、牧原克典、川浪彰、東清一郎、宮崎誠一
第70回秋季応用物理学会
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Effect of Chemical Composition of SiOx Films on Rapid Formation of Si Nanocrystals Induced by Thermal Plasma Jet Irradiation International conference
23rd International Conference on Amorphous and Nanocrystalline Semiconductor
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Formation of High Density Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Memory Application International conference
S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto
International Conference on Processing and Manufacturing of Advanced Materials, Processing, Fabrication, Properties
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Selective Crystallization of a-Ge:H Thin Films by Pt-coating and Exposing to Remote H2 Plasma International conference
23rd International Conference on Amorphous and Nanocrystalline Semiconductor
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Anomalous temperature dependence of electron tunneling between a two-dimensional electron gas and Si dots International conference
Y. Sakurai, S. Nomura, Y. Takada, K. Shiraishi, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki
The 18th International Conference on Electronic Properties of Two-Dimensional Systems
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Importance of Electronic State of Two-Dimensional Electron Gas for Electron Injection Process in Nano-Electronic Devices International conference
14th International Conference on Modulated Semiconductor
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Formation Mechanism of Metal Nanodots Induced by Remote Plasma Exposure International conference
K. Makihara, K. Shimanoe, A. Kawanami, A. Fujimoto, M. Ikeda, S. Higashi and S. Miyazaki
The European Materials Research Society 2009 Spring Meeting
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Electrical Detection of Silicon Binding Protein-Protein A using a p-MOSFET Sensor International conference
H. Murakami, S. Mahboob, K. Katayama, K. Makihara, M. Ikeda, Y. Hata, A. Kuroda, S. Higashi and S. Miyazaki
2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
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Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots International conference
K. Makihara, M. Ikeda, A. Kawanami and S. Miyazaki
2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
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Electrical Charging Characteristics of NiSi-Nanodots Floating Gate International conference
S. Nakanishi, M. Ikeda, K. Shimanoe, K. Makihara, A. Kawanami, N. Morisawa, A. Fujimoto, S. Higashi and S. Miyazaki
International Meeting for Future of Electron Devices, Kansai