Presentations -
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熱プラズマジェットミリ秒熱処理による高密度Ptナノドットの形成とフローティングゲートメモリ応用
牧原克典、山根雅人、森澤直也、松本和也、池田弥央、東清一郎、宮崎誠一
第58回春季応用物理学会
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リモート水素プラズマ処理によるPt/a-Ge:Hの合金化反応制御
牧原克典、森澤直也、藤岡知宏、松本達弥、林将平、岡田竜弥、池田弥央、東清一郎、宮崎誠一
第58回春季応用物理学会
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熱プラズマジェットを用いたミリ秒熱処理によるPtシリサイドナノドットの形成
山根雅人、池田弥央、森澤直也、松原良平、西田悠亮、松本和也、林将平、牧原克典、宮崎誠一、東清一郎
第58回春季応用物理学会
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マイクロ融液プロセスによる水素終端Si 基板上での疑似ヘテロエピタキシャルGe 膜の形成
松本達弥、牧原克典、赤澤宗樹、東清一郎
第58回春季応用物理学会
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Formation of High Density Pt Nanodots on SiO2 Induced by Millisecond Rapid Thermal Annealing using Thermal Plasma Jet International conference
K. Makihara, K. Matsumoto, T. Okada, N. Morisawa, M. Ikeda, S. Higashi and S. Miyazaki
International Symposium on Dry Process
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Geometry Dependencies of Switching Characteristics of Anodic Porous Alumina for ReRAM International conference
S. Otsuka, R. Takeda, T. Shimizu, S. Shingubara, K. Makihara, S. Miyazaki, T. Watanabe, Y. Takano and K. Takase
23rd International Microprocesses and Nanotechnology Conference
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The Impact of Y2O3 Addition into TiO2 on Electronic States and Resistive Switching Characteristics International conference
A. Ohta, Y. Goto, G. Wei, K. Makihara, H. Murakami, S. Higashi, and S. Miyazaki
23rd International Microprocesses and Nanotechnology Conference
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Self-Align Formation of Si Quantum Dots International conference
K. Makihara, M. Ikeda, H. Deki, A. Ohta and S. Miyazaki
218th Electrochemical Society Meeting : SiGe & Ge Materials, Processing and Device Symposium
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Formation of Pt-germanide from Pt/a-Ge:H by Remote Hydrogen Plasma Treatment at Atmosphere Temperature International conference
K. Makihara, Y. Miyazaki, T. Fujioka, T. Matsumoto, M. Ikeda and S. Miyazaki
7th International Conference on Reactive Plasmas / 28th Symposium on Plasma Processing / 63rd Gaseous Electronics Conference
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Formation of Pseudo-Expitaxial Ge Films on Si(100) by Droplet of Microliquid Ge Melt International conference
T. Matsumoto, S. Higashi, K. Makihara, M. Akazawa and S. Miyazaki
218th Electrochemical Society Meeting : SiGe & Ge Materials, Processing and Device Symposium
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Collective Tunneling Model in Charge Trap Type NVM Cell International conference
M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi, T. Endoh
2010 International Conference on Solid State Devices and Materials
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Multistep Electron Injection in a PtSi-Nanodots/Silicon-Quantum-Dots Hybrid Floating Gate in nMOSFETs International conference
M. Ikeda, S. Nakanishi, N. Morisawa, A. Kawanami, K. Makihara and S. Miyazaki
2010 International Conference on Solid State Devices and Materials
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Study on Native Oxidation of Ge (111) and (100) Surfaces International conference
S. K. Sahari, H. Murakami, T. Fujioka, T. Bando, A. Ohta, K. Makihara, S. Higashi and S. Miyazaki
2010 International Conference on Solid State Devices and Materials
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PtSiナノドット/Si量子ドット積層ハイブリッドフローティングゲートにおける多段階電子注入特性
池田弥央、中西翔、森澤直也、川浪彰、牧原克典、宮崎誠一
第71回秋季応用物理学会
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自己整合一次元連結Si量子ドットの形成
牧原克典、池田弥央、大田晃生、川浪彰、宮崎誠一
第71回秋季応用物理学会
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微小融液滴下による疑似エピタキシャルGe / Siの形成
松本竜弥、東清一郎、牧原克典、赤澤宗樹、宮崎誠一
第71回秋季応用物理学会
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Collective Tunneling Model between Two-Dimensional Electron Gas to Si-Nano-Dot International conference
M. Muraguchi, Y. Sakurai, Y. Takada, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki, Y. Shigeta and T. Endoh
30th International Conference on the Physics of Semiconductors
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The Impact of H2 Anneal on Resistive Switching in Pt/TiO2/Pt Structure International conference
2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
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Formation of PtAl Nanodots Induced by Remote Hydrogen Plasma International conference
K. Makihara, R. Ashihara, M. Ikeda, A. Ohta, N. Morisawa, T. Fujioka, H. Murakami and S. Miyazaki
International Symposium on Technology Evoluation for Silicon Nano-Electronics
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Formation and Characterization of Hybrid Nanodots Stack Structure and Its Application to Floating Gate Memories International conference
S. Miyazaki, M. Ikeda, K. Makihara, H. Murakami and S. Higashi
International Symposium on Technology Evoluation for Silicon Nano-Electronics