Presentations -
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Oxidation of GaN surface by remote oxygen plasma International conference
T. Yamamoto, N. Taoka, A. Ohta1, N. X. Truyen, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, M. Shimizu, and S. Miyazaki
39th International Symposium on Dry Process (DPS)
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Ultrathin Ge Growth on Flat Ag Surface in Hetero-Epitaxial Ag/Ge Structure by Annealing International conference
K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki
30th International Microprocesses and Nanotechnology Conference
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Direct Observation of Electrical Dipole and Atomic Density at High-k Dielectrics/SiO2 Interface International conference
N. Fujimura, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki
2017 International Conference on Solid State Devices and Materials
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High thermal stability of abrupt SiO2/GaN interface with low interface state density International conference
N. X. Truyen, N. Taoka, A. Ohta, K. Makihara, H. Yamada, T. Takahashi, M. Ikeda, M. Shimizu, and S. Miyazaki
2017 International Conference on Solid State Devices and Materials
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Electroluminescence of Super-atom-like Si-Ge based Quantum Dots Floating Gate International conference
K. Makihara, M. Ikeda, N. Fujimura, A. Ohta, and S. Miyazaki
2017 International Conference on Solid State Devices and Materials
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Growth of 2D Crystal of Group-IV Elements on Epitaxial Ag(111) International conference
K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki
2017 International Conference on Solid State Devices and Materials
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光電子分光分析によるSiO2/4H-SiCの電子状態評価
渡辺浩成、大田晃生、池田弥生、牧原克典、宮崎誠一
第4回応用物理学会SC東海地区学術講演会
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GeコアSi量子ドット／Si量子ドット多重集積構造のEL特性
竹内大智、山田健太郎、牧原克典、池田弥央、大田晃生、宮崎誠一
第77回応用物理学会秋季学術講演会
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リモートプラズマCVD SiO2/GaN界面の光電子分光分析
グェンスァン チュン，大田 晃生，牧原 克典，池田 弥央，宮崎 誠一
第77回応用物理学会秋季学術講演会
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Magnetotransport Properties of FePt Alloy-NDs Stacked Structures International conference
K. Makihara, T. Kawase, A. Ohta, M. Ikeda, and S. Miyazaki
2016 International Conference on Solid State Devices and Materials
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Evaluation of Potential Change and Electrical Dipole in HfO2/SiO2/Si Structure International conference
2016 International Conference on Solid State Devices and Materials
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Evaluation of Dielectric Function of Thermally-grown SiO2 and GeO2 from Energy Loss Signals for XPS Core-line Photoelectrons International conference
T. Yamamoto, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki
230th Meeting of The Electrochemical Society (ECS)
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Effect of Ge Core Size on Photoluminescence from Si Quantum Dots with Ge Core International conference
K. Yamada, K. Kondo, M. Ikeda, K. Makihara, and S. Miyazaki
230th Meeting of The Electrochemical Society (ECS)
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Low Temperature Formation of Crystalline Si:H/Ge:H Heterostructures by Plasma Enhanced CVD in Combination with Ni-NDs Seeding Nucleation International conference
Y. Lu, K. Makihara, D. Takeuchi, M. Ikeda, A. Ohta, and S. Miyazaki
29th International Microprocesses and Nanotechnology Conference
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High Density Formation of Ta/Ta-Oxide Core-Shell Nanodots International conference
Y. Wang, D. Takeuchi, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki
29th International Microprocesses and Nanotechnology Conference
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Characterization of Electrical Dipole Formed at HfO2/SiO2 and SiO2/Si Interfaces Using by XPS International conference
N. Fujimura, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki
JSPS Meeting 2016 : Workshop on Atomically Controlled Processing for Ultra-large Scale Integration
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XPS Study on Dielectric Function of Thermally-grown SiO2 International conference
T. Yamamoto, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki
JSPS Meeting 2016 Workshop on Atomically Controlled Processing for Ultra-large Scale Integration
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Effects of Hydrogen Plasma Treatment on Optical Properties of LSAT ((LaAlO3)0.3-(Sr2AlTaO6)0.7 International conference
D. R. Purba, K. Makihara, A. Rusydi, S. Miyazaki, and Y. Darma
The 2nd Materials Research Society of Indonesia (MRS-Id) Meeting
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Formation and Characterization of Si Quantum Dots with Ge Core for Functional Devices Invited International conference
S. Miyazaki, D. Takeuchi, M. Ikeda, and K. Makihara
2016 International Conference on Solid State Devices and Materials
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Processing and Characterization of Si/Ge Quantum Dots Invited International conference
S. Miyazaki, K. Makihara, A. Ohta, and M. Ikeda
Int. Electron Devices Meeting 2016 (IEDM)