Presentations -
-
Abrupt SiO2/GaN Interface Properties Formed by Remote Plasma Assisted CVD International conference
2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
-
Evaluation of Energy Distribution of Filled Defects of Si Oxide Thin Films from Total Photoelectron Yield Spectroscopy International conference
A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki
20th Conference on Insulating Films on Semiconductors
-
Characterization of Electroluminescence from Si-QDs with Ge Core International conference
K. Yamada, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki
The 10th International Conference on Silicon Epitaxy and heterostructures
-
Evaluation of Potential Distribution in Multiple Stacked Si Quantum Dots Structure by Hard X-ray Photoelectron Spectroscopy International conference
Y. Nakashima, D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki
The 10th International Conference on Silicon Epitaxy and heterostructures
-
Fabrication and Magnetoelectronic Transport Fe3Si-Nanodots on Ultrathin SiO2 International conference
H. Zhang, K. Makihara, A. Ohta, M. Ikeda, and S, Miyazaki
The 10th International Conference on Silicon Epitaxy and heterostructures
-
Magnetoelectronic Transport of Double Stack FePt Nanodots International conference
2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
-
Potential Changes and Chemical Bonding Features for Si-MOS Diodes as Evaluated from HAXPES Analysis International conference
A. Ohta, H. Murakami, M. Ikeda, K. Makihara, E. Ikenaga, S. Miyazaki
20th Conference on Insulating Films on Semiconductors
-
High Density Formation of and Light Emission from Si-Quantum Dots with Ge core International conference
S. Miyazaki, K. Yamada, M. Ikeda, and K. Makihara
MRS spring Meeting
-
High Density Formation of Fe-silicide Nanodots and Their Magnetic Properties International conference
S. Ishida, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
IUMRS-ICAM 2017
-
Relationships between Al2O3/GaN Interface Properties near Conduction Band Edge and Post-Deposition Annealing Temperatures International conference
N. Taoka, T. Kobayashi, M. Nakamura, T. Sagawa, N. X. Truyen, A. Ohta, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, T. Kubo, T. Yamada, T. Egawa, S. Miyazaki, and M. Shimizu
48th IEEE Semiconductor Interface Specialists Conference
-
XPS Study on Evaluation of Electrical Dipole and Atomic Density Ratio at Ultrathin High-k Dielectrics/SiO2 Interface International conference
N. Fujimura, A. Ohta, M. Ikeda, K. Makihara, S. Miyazaki
2017 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF)
-
Electrical properties of SiO2/GaN interfaces formed by remote oxygen plasma mixed with He or Ar International conference
N. X. Truyen, N. Taoka, A. Ohta, K. Makihara, H. Yamada, T. Takahashi, M. Ikeda, M. Shimizu, and S. Miyazaki
2017 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF)
-
Energy Band Structure of Ga-oxide/GaN Interface Formed by Remote O2 Plasma International conference
T. Yamamoto, N. Taoka, A. Ohta1, N. X. Truyen, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, M. Shimizu, and S. Miyazaki
2017 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF)
-
Oxidation of GaN surface by remote oxygen plasma International conference
T. Yamamoto, N. Taoka, A. Ohta1, N. X. Truyen, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, M. Shimizu, and S. Miyazaki
39th International Symposium on Dry Process (DPS)
-
Ultrathin Ge Growth on Flat Ag Surface in Hetero-Epitaxial Ag/Ge Structure by Annealing International conference
K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki
30th International Microprocesses and Nanotechnology Conference
-
Direct Observation of Electrical Dipole and Atomic Density at High-k Dielectrics/SiO2 Interface International conference
N. Fujimura, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki
2017 International Conference on Solid State Devices and Materials
-
High thermal stability of abrupt SiO2/GaN interface with low interface state density International conference
N. X. Truyen, N. Taoka, A. Ohta, K. Makihara, H. Yamada, T. Takahashi, M. Ikeda, M. Shimizu, and S. Miyazaki
2017 International Conference on Solid State Devices and Materials
-
Electroluminescence of Super-atom-like Si-Ge based Quantum Dots Floating Gate International conference
K. Makihara, M. Ikeda, N. Fujimura, A. Ohta, and S. Miyazaki
2017 International Conference on Solid State Devices and Materials
-
Growth of 2D Crystal of Group-IV Elements on Epitaxial Ag(111) International conference
K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki
2017 International Conference on Solid State Devices and Materials
-
プラズマ酸化で形成したGa酸化物薄膜/GaN構造のエネルギーバンド構造と電気的界面特性
山本泰史, 田岡紀之, 大田晃生, グェンスァンチュン, 山田永, 高橋言緒, 池田弥央, 牧原克典, 清水三聡, 宮崎誠一
電子デバイス界面テクノロジー研究会 (第23回研究会)