講演・口頭発表等 - 宇治原 徹
-
Way to choose appropriate solvents to prepare high-quality crystalline-silicon layers by LPE method for photovoltaic materials 国際会議
"Fifteenth American Conference on Crystal Growth and Epitaxy, Keystone, Colorado, July 20 - 24 (2003)"
-
In situ observation of solid-liquid interface during crystal growth from silicon melt 国際会議
"Fifteenth American Conference on Crystal Growth and Epitaxy, Keystone, Colorado, July 20 - 24 (2003)"
-
Way to choose appropriate solvents to prepare high-quality crystalline-silicon layers by LPE method for photovoltaic materials 国際会議
"Fifteenth American Conference on Crystal Growth and Epitaxy, Keystone, Colorado, July 20 - 24 (2003)"
-
Growth and properties of SiGe multicrystals with microscopic compositional distribution for new Si/SiGe heterostructural solar cells 国際会議
"Fifteenth American Conference on Crystal Growth and Epitaxy, Keystone, Colorado, July 20 - 24 (2003)"
-
Observation of geometrical selection of SiGe bulk crystal using EBSP measurement and its utilization for restraining polycrystallization 国際会議
"Fifteenth American Conference on Crystal Growth and Epitaxy, Keystone, Colorado, July 20 - 24 (2003)"
-
Prediction of strain induced poly-crystallization during crystal growth 国際会議
"Fifteenth American Conference on Crystal Growth and Epitaxy, Keystone, Colorado, July 20 - 24 (2003)"
-
Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge thin film on Si-on-insulator substrate 国際会議
"First International SiGe Technology and Device Meeting, Nagoya, Japan, 15-17 January (2003)."
-
Impact of the annealing temperature on the homogeneity of SiGe-on-insulator 国際会議
"The Third International Conference on SiGe(C) Epitaxy and Heterostructures, Santa Fe, New Mexico, U.S.A, March 9-12 (2003)."
-
Fabrication of solar cell with stacked Ge islands for enhanced absorption in the infrared regime 国際会議
"in European Materials Research Society 2003 Spring Meeting, Strasbourg, France, June 10-13 (2003)"
-
Structure and property of directionally grown SiGe multicrystals with microscopic compositional distribution 国際会議
"3rd World Conference on Photovoltaic Energy Conversion, Osaka, May 11-18 (2003)."
-
Direct observations of crystal growth from silicon 国際会議
"3rd World Conference on Photovoltaic Energy Conversion, Osaka, May 11-18 (2003)."
-
What is the most important growth parameter on crystal quality of the silicon layer by LPE method? 国際会議
"3rd World Conference on Photovoltaic Energy Conversion, May 11 - 18, 2003Osaka International Convention Center (Grand Cube, Osaka) Osaka, Japan"
-
Spatial distribution of composition and strain in multicrystalline SiGe bulk crystal and their impact on solar cell application 国際会議
"3rd World Conference on Photovoltaic Energy Conversion, Osaka, May 11-18 (2003)"
-
Epitaxial structure and growth behavior of organic semiconductor thin film crystals on hydrogen terminated Si(111) substrate 国際会議
"First Kyoto Workshop on Computational Materials Science, Kyoto University, March 1-4 (2003)."
-
Local strain in multicrystalline-SiGe and its impact on the band structure 国際会議
"First Kyoto Workshop on Computational Materials Science, Kyoto University, March 1-4 (2003)."
-
Mechanism of improvement in the quality of protein crystals by applying homogeneous magnetic field during the crystal growth 国際会議
"in the 2nd Japan-Netherlands Seminor on Crystal Growth: Theory and In-Situ Measurements, Akiu, Sendai, Japan, January 14-17 (2002)."
-
Mechanism of improvement in the quality of protein crystals by a homogeneous magnetic field 国際会議
"in the 9th International Conference on Crystallization of Biological Macromolecules, Jena, Germany, March 23-28 (2002)."
-
In-situ Measurement of the Marangoni Convection in a NaCl Aqueous Solution under Microgravity 国際会議
"in the 9th International Conference on Crystallization of Biological Macromolecules, Jena, Germany, March 23-28 (2002)."
-
Estimation of the quality of lysozyme crystal grown under controlled driving force 国際会議
"in the 9th International Conference on Crystallization of Biological Macromolecules, Jena, Germany, March 23-28 (2002)."
-
Melt growth of SiGe bulk crystals with uniform composition and SiGe multicrystals with microscopic compositional distribution for heterostructure device applications 国際会議
"in International Forum on Science and Technology of Crystal Growth, Sendai, Japan, March 3-4 (2002)."