講演・口頭発表等 - 牧原 克典
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Abrupt SiO2/GaN Interface Properties Formed by Remote Plasma Assisted CVD 国際会議
2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
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High Density Formation of and Light Emission from Si-Quantum Dots with Ge core 国際会議
S. Miyazaki, K. Yamada, M. Ikeda, and K. Makihara
MRS spring Meeting
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Potential Changes and Chemical Bonding Features for Si-MOS Diodes as Evaluated from HAXPES Analysis 国際会議
A. Ohta, H. Murakami, M. Ikeda, K. Makihara, E. Ikenaga, S. Miyazaki
20th Conference on Insulating Films on Semiconductors
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Evaluation of Energy Distribution of Filled Defects of Si Oxide Thin Films from Total Photoelectron Yield Spectroscopy 国際会議
A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki
20th Conference on Insulating Films on Semiconductors
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Characterization of Electroluminescence from Si-QDs with Ge Core 国際会議
K. Yamada, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki
The 10th International Conference on Silicon Epitaxy and heterostructures
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Evaluation of Potential Distribution in Multiple Stacked Si Quantum Dots Structure by Hard X-ray Photoelectron Spectroscopy 国際会議
Y. Nakashima, D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki
The 10th International Conference on Silicon Epitaxy and heterostructures
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Fabrication and Magnetoelectronic Transport Fe3Si-Nanodots on Ultrathin SiO2 国際会議
H. Zhang, K. Makihara, A. Ohta, M. Ikeda, and S, Miyazaki
The 10th International Conference on Silicon Epitaxy and heterostructures
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Magnetoelectronic Transport of Double Stack FePt Nanodots 国際会議
2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
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Ultrathin Ge Growth on Flat Ag Surface in Hetero-Epitaxial Ag/Ge Structure by Annealing 国際会議
K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki
30th International Microprocesses and Nanotechnology Conference
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Direct Observation of Electrical Dipole and Atomic Density at High-k Dielectrics/SiO2 Interface 国際会議
N. Fujimura, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki
2017 International Conference on Solid State Devices and Materials
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High thermal stability of abrupt SiO2/GaN interface with low interface state density 国際会議
N. X. Truyen, N. Taoka, A. Ohta, K. Makihara, H. Yamada, T. Takahashi, M. Ikeda, M. Shimizu, and S. Miyazaki
2017 International Conference on Solid State Devices and Materials
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Electroluminescence of Super-atom-like Si-Ge based Quantum Dots Floating Gate 国際会議
K. Makihara, M. Ikeda, N. Fujimura, A. Ohta, and S. Miyazaki
2017 International Conference on Solid State Devices and Materials
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Growth of 2D Crystal of Group-IV Elements on Epitaxial Ag(111) 国際会議
K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki
2017 International Conference on Solid State Devices and Materials
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High Density Formation of Fe-silicide Nanodots and Their Magnetic Properties 国際会議
S. Ishida, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
IUMRS-ICAM 2017
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Oxidation of GaN surface by remote oxygen plasma 国際会議
T. Yamamoto, N. Taoka, A. Ohta1, N. X. Truyen, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, M. Shimizu, and S. Miyazaki
39th International Symposium on Dry Process (DPS)
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リモートプラズマ支援CVDによる低欠陥密度SiO2/GaN界面の形成
グェンスァンチュン, 田岡紀之, 大田晃生, 山田永, 高橋言緒, 池田弥央, 牧原克典, 清水三聡, 宮崎誠一
第17回日本表面科学会中部支部学術講演会
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高誘電率絶縁膜/SiO2界面のダイポール形成と化学構造の関係
藤村信幸、大田晃生、池田弥央、牧原克典、宮崎誠一
第17回日本表面科学会中部支部学術講演会
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高密度GeコアSi量子ドットの室温EL特性評価
山田健太郎、牧原克典、池田弥央、大田晃生、宮崎誠一
第17回日本表面科学会中部支部学術講演会
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二次元結晶合成に向けたAg上Ge極薄膜の形成
伊藤公一、大田晃生、黒澤昌志、洗平昌晃、池田弥央、牧原克典、宮崎誠一
電子デバイス界面テクノロジー研究会 (第23回研究会)
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XPSによる極薄high-k/SiO2ゲートスタック構造の電子状態および化学結合状態評価
藤村信幸、大田晃生、池田弥央、牧原克典、宮崎誠一
電子デバイス界面テクノロジー研究会 (第23回研究会)