Presentations -
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In-situ Sb Doping into Ge1-xSnx Epitaxial Layer toward Enhancement of Photoluminescence Intensity International conference
Masahiro Fukuda, Jihee Jeon, Mitsuo Sakashita, Shigehisa Shibayama, Masashi Kurosawa, Osamu Nakatsuka
The 8th International Symposium on Control of Semiconductor Interfaces (ISCSI-VIII) 2019.11.29
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Crystal Growth and Characterization of Group-IV Alloy Semiconductor Heterostructures for Future Electronic Devices Invited International conference
O. Nakatsuka, M. Kurosawa, S. Shibayama, M. Sakashita, and S. Zaima
The 8th International Symposium on Control of Semiconductor Interfaces (ISCSI-VIII)
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Ferroelectric Phase Evolution of Undoped ZrO2 Thin Films by Wet O2 Annealing Process International conference
Shigehisa Shibayama, Jotaro Nagano, Mitsuo Sakashita, Osamu Nakatsuka
2019 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEIVICES -SCIENCE AND TECHNOLOGY-(IWDTF2019)
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Saturation of Activated Sb Atom in Heavily Sb-Doped Ge Epitaxial Layers International conference
Jihee Jeon, Shigehisa Shibayama, Shigeaki Zaima, Osamu Nakatsuka
International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019) 2019.11.3
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Development of in-situ cyclic metal layer oxidation to form abrupt Al2O3/4H-SiC interface International conference
T. Doi, S. Shibayama, W. Takeuchi, M. Sakashita, N. Taoka, M. Shimizu, and O. Nakatsuka
International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019)
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Model development of MOCVD growth for realizing high-Sn-content Ge1-xSnx epitaxial layer ~ What physical properties are required for precursors? ~ International conference
Y. Miki, S. Shibayama, S. Zaima, and O. Nakatsuka
International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019)
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Optoelectronic Property of GeSn and GeSiSn Heterostructure International conference
M. Fukuda, M. Sakashita, S. Shibayama, M. Kurosawa, S. Zaima, and O. Nakatsuka
International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019)
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金属薄膜酸化法によるAl2O3/4H-SiC(0001)界面特性の改善
土井拓馬、柴山茂久、竹内和歌奈、坂下満男、田岡紀之、清水三聡、中塚理
第7回 応用物理学会SC東海地区学術講演会 2019 （JSAP SCTS 2019）
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SiCxOy界面層導入による金属/4H-SiCコンタクトのSBH制御 Control
橋本健太郎、土井拓馬、柴山茂久、中塚理
第7回 応用物理学会SC東海地区学術講演会 2019 （JSAP SCTS 2019） "名古屋大 （名古屋）"
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Saturation of Sb1+ Concentration in Heavily Sb-doped n+-Ge Epitaxial Layers International conference
J. Jeon, S. Shibayama, and O. Nakatsuka
Advanced Metallization Conference 2019 (ADMETA2019): 29th Asian Session Conference
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高濃度SbドープによるGe1-xSnxのフォトルミネッセンス発光強度の増大
福田雅大、全智禧、坂下満男、柴山茂久、黒澤昌志、中塚理
第78回 応用物理学会秋季学術講演会
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In-situ cyclic metal layer oxidation for future improving interface properties of Al2O3/4H-SiC(0001) gate stacks International conference
Takuma Doi, Shigehisa Shibayama, Wakana Takeuchi, Mitsuo Sakashita, Noriyuki Taoka, Mitsuaki Shimizu, Osamu Nakatsuka
2019 International Conference on Solid State Devices and Materials 2019.9.5
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Strain Relaxation Enhancement of Ge1-x-ySixSny Epitaxial Layer on Ge Substrate Using Ion-Implantation Method International conference
H. Sofue, M. Fukuda, S. Shibayama, S. Zaima, and O. Nakatsuka
2019 International Conference on Solid State Devices and Materials
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Fermi level pinninng at metal/4H-SiC contact induced by SiCxOy interalyer International conference
Kentaro Hashimoto, Takuma Doi, Shigehisa Shibayama, Osamu Nakatsuka
2019 International Conference on Solid State Devices and Materials 2019.9.4
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GeSn and GeSiSn Heterostructures for Optoelectronic Applications Invited International conference
O. Nakatsuka, M. Fukuda, M. Kurosawa, M. Sakashita, S. Shibayama, and S. Zaima
2019 IEEE Photonics Society Summer Topical Meeting Series (IEEE/SUM)
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Ultra-low resistance contact for n-type Ge1-xSnx with in-situ Sb heavily doping and nickel stanogermanide formation
J. Jeon, A. Suzuki, S. Shibayama, S. Zaima, and O. Nakatsuka
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イオン注入法によるⅣ族半導体混晶薄膜の歪緩和促進機構について
祖父江秀隆、福田雅大、柴山茂久、財満鎭明、中塚理
シリコン材料・デバイス研究会(SDM)
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Further reduction of Schottky barrier height of Hf-germanide/n-Ge(001) contacts by forming epitaxial HfGe2 International conference
K. Senga, S. Shibayama, M. Sakashita, S. Zaima, and O. Nakatsuka
19th International Workshop on Junction Technology 2019
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Development and challenges of group-IV semiconductors for nanoelectronic applications Invited International conference
S. Zaima, O. Nakatsuka, M. Kurosawa, M. Sakashita, and S. Shibayama
The 11th International Conference on High Performance Ceramics (CICC-11)
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Formation of Strain-relaxed Ge1-x-ySixSny Epitaxial Layer using Ion-implanted Ge Substrate International conference
H. Sofue, M. Fukuda, S. Shibayama, O. Nakatsuka, and S. Zaima
11th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 12th International Conference on Plasma-Nano Technology & Science ISPlasma2019/IC-PLANTS2019