Presentations -
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Improvement of Remanent Polarization and Endurance Characteristics in Thin Ferroelectric Y-doped HfO2
X. Tian, S. Shibayama, T. Nishimura, T. Yajima, S. Migita, and A. Toriumi
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HfxZr1-xO2が広い濃度領域で強誘電性を示す起源について
柴山 茂久、西村 知紀、右田 真司、鳥海 明
第65回応用物理学会春季学術講演会
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アンドープZrO2薄膜における強誘電性の実現
柴山 茂久、西村 知紀、右田 真司、鳥海 明
第65回応用物理学会春季学術講演会
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パルスレーザーアニールによるHfO2薄膜の非平衡結晶化
森 優樹、柴山 茂久、矢嶋 赳彬、西村 知紀、右田 真司、鳥海 明
第65回応用物理学会春季学術講演会
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Nucleation-Driven Ferroelectric Phase Formation in ZrO2 Thin Films -What is Different in ZrO2 from HfO2 ?- International conference
S. Shibayama, T. Nishimura, S. Migita, and A. Toriumi
2nd Electron Devices Technology and Manufacturing (EDTM) Conference 2018
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Sub-nm EOT Ferroelectric HfO2 on p+Ge with Highly Reliable Field Cycling Properties Invited
X. Tian, L. Xu, S. Shibayama, T. Nishimura, T. Yajima, S. Migita, and A. Toriumi
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Sub-nm EOT Ferroelectric HfO2 on p+Ge with Highly Reliable Field Cycling Properties International conference
X. Tian, L. Xu, S. Shibayama, T. Nishimura, T. Yajima, S. Migita, and A. Toriumi
2017 IEEE International Electron Devices Meeting
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Thickness-dependent ferroelectric phase evolution in doped HfO2 International conference
L. Xu, T. Nishimura, S. Shibayama, T. Yajima, S. Migita, and A. Toriumi
2017 International Conference on Solid State Devices and Materials
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Direct Evidence of 3-nm-thick Ferroelectric HfO2 International conference
X. Tian, S. Shibayama, T. Nishimura, T. Yajima, S. Migita, and A. Toriumi
2017 International Conference on Solid State Devices and Materials
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Dopant-independent maximum Pr of doped ferroelectric HfO2
L. Xu, S. Shibayama, T. Nishimura, T. Yajima, S. Migita, and A. Toriumi
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Ferroelectric tunnel junctions with ultrathin Y2O3-doped HfO2
X. Tian, S. Shibayama, L. Xu, S. Migita, and A. Toriumi
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HfO2膜の強誘電相形成における熱履歴の重要性
柴山 茂久、徐 倫、田 璇、右田 真司、鳥海 明
第64回応用物理学会春季学術講演会
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General relationship for cation and anion doping effects on ferroelectric HfO2 formation Invited
L. Xu, S. Shibayama, K. Izukashi, T. Nishimura, T. Yajima, S. Migita, and A. Toriumi
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圧電応答力顕微鏡を用いたYドープHfO2の強誘電性ドメインの観察
柴山 茂久、徐 倫、田 璇、右田 真司、鳥海 明
特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第22回）
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Ferroelectric HfO2 MIS Capacitor and MISFET on Oxide Semiconductors International conference
L. Xu, S. Shibayama, K. Izukashi, T. Nishimura, T. Yajima, S. Migita, and A. Toriumi
47th IEEE Semiconductor Interface Specialists Conference
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General relationship for cation and anion doping effects on ferroelectric HfO2 formation International conference
L. Xu, S. Shibayama, K. Izukashi, T. Nishimura, T. Yajima, S. Migita, and A. Toriumi
2016 IEEE International Electron Devices Meeting
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Opportunity of Ferroelectric Phase Formation in Nitrogen-doped HfO2 International conference
L. Xu, S. Shibayama, T. Nishimura, T. Yajima, S. Migita, and A. Toriumi
2016 International Conference on Solid State Devices and Materials
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Depolarization Process in Ferroelectric HfO2 Probed by Piezo-response Force Microscopy (PFM) International conference
S. Shibayama, L. Xu, X. Tian, S. Migita, and A. Toriumi
2016 International Conference on Solid State Devices and Materials
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Tunneling Electro-resistance Effect in Ultra-thin Ferroelectric HfO2 Junctions International conference
X. Tian, S. Shibayama, T. Nishimura, T. Yajima, S. Migita, and A. Toriumi
2016 International Conference on Solid State Devices and Materials
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Effects of nitrogen bonding on para-/ferroelectric transition of HfO2 Invited
L. Xu, T. Nishimura, S. Shibayama, T. Yajima, S. Migita, and A. Toriumi