Faculty Profiles - ISHIKAWA, Kenji

Papers - ISHIKAWA, Kenji

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Progress and perspectives in dry processes for leading-edge manufacturing of devices: toward intelligent processes and virtual product development Reviewed

Iwase Taku, Kamaji Yoshito, Kang Song Yun, Koga Kazunori, Kuboi Nobuyuki, Nakamura Moritaka, Negishi Nobuyuki, Nozaki Tomohiro, Nunomura Shota, Ogawa Daisuke, Omura Mitsuhiro, Shimizu Tetsuji, Shinoda Kazunori, Sonoda Yasushi, Suzuki Haruka, Takahashi Kazuo, Tsutsumi Takayoshi, Yoshikawa Kenichi, Ishijima Tatsuo, Ishikawa Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( SE ) 2019.6

Progress and perspectives in dry processes for nanoscale feature fabrication: fine pattern transfer and high-aspect-ratio feature formation Reviewed

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( SE ) 2019.6

Electronic properties and primarily dissociation channels of fluoroethane compounds Reviewed

Hayashi, T; Ishikawa, K; Sekine, M; Hori, M

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( SE ) 2019.6

Language：English Publishing type：Research paper (scientific journal) Publisher：Japanese Journal of Applied Physics

Electronic properties of fluoroethane compounds except C2H5F, C2H4F2, CH3CF3, C2H2F4, and C2F6 have not been reported. On the other hands, the physicochemical properties were reported for the usage as the alternative refrigerants. Dissociation channels in the process plasma for fluoroethane compounds were not fully discussed except 1,1,1,2-C2H2F4. Therefore we have investigated the electronic properties and primarily dissociation channels of fluoroethane compounds in the process plasma in semiconductor manufacturing, using computational chemistry. Positive and negative ionized states were investigated by density functional method and the excited states were investigated by EOMCCSD/aug-cc-pVDZ and TD-SCF CAM-B3LYP/aug-cc-pVDZ. It was generally shown through these investigations that C-C bond scission occurred by excitation and ionization and C-F bond scission occurred by excitation and electron attachment.

DOI： 10.7567/1347-4065/ab09ca

Web of Science

Scopus

Polyethylene terephthalate (PET) surface modification by VUV and neutral active species in remote oxygen or hydrogen plasmas Reviewed International coauthorship

Zhang Yan, Ishikawa Kenji, Mozetic Miran, Tsutsumi Takayoshi, Kondo Hiroki, Sekine Makoto, Hori Masaru

PLASMA PROCESSES AND POLYMERS Vol. 16 ( 6 ) 2019.6

Laser-drilling formation of through-glass-via (TGV) on polymer-laminated glass Reviewed

Sato, Y; Imajyo, N; Ishikawa, K; Tummala, R; Hori, M

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS Vol. 30 ( 11 ) page： 10183 - 10190 2019.6

Language：English Publishing type：Research paper (scientific journal) Publisher：Journal of Materials Science: Materials in Electronics

A three-dimensional (3D) glass integrated passive device (IPD) is an evolutionally advanced configuration to dramatically reduce the electronics form factor and manufacturing cost of current IPDs by introducing ultra-thin glass with through-glass-vias (TGVs). A defect-free TGV formation technology in polymer-laminated glass substrates is required to realize a highly reliable 3D glass IPD. This paper discusses mechanisms of each defect formation in the use of several types of lasers to explore suitable technology for defect-free drilling in polymer-laminated glass.

DOI： 10.1007/s10854-019-01354-5

Web of Science

Scopus

Effects of plasma shield plate design on epitaxial GaN films grown for large-sized wafers in radical-enhanced metalorganic chemical vapor deposition Reviewed

Isobe, Y; Sakai, T; Sugiyama, N; Mizushima, I; Suguro, K; Miyashita, N; Lu, Y; Wilson, AF; Kumar, DA; Ikarashi, N; Kondo, H; Ishikawa, K; Shimizu, N; Oda, O; Sekine, M; Hori, M

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Vol. 37 ( 3 ) 2019.5

Language：English Publishing type：Research paper (scientific journal) Publisher：Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

Epitaxial growth of GaN films at a low temperature of 800 °C was studied in radical-enhanced metal-organic chemical vapor deposition, focusing on the discharge region of the plasma of a mixture of N2 and H2 gases. The effect of plasma confinement on the growth is crucial for realizing high crystal quality of grown GaN films, owing to the suppression of plasma-induced damage and decomposition of gallium precursors in the gaseous phase. By confined plasma in the discharge region using the plasma shield plates made of metal with multiple small holes effectively, GaN with a relatively flat surface was grown under conditions of higher V/III ratios. Epitaxial growth of GaN films was achieved by modifying the plate design and controlling the high V/III ratio using both the plasma-excitation power and the Ga precursor flow rate.

DOI： 10.1116/1.5083970

Web of Science

Scopus

Erratum to “Chemical bonding structure in porous SiOC films (k < 2.4) with high plasma-induced damage resistance” (Micro and Nano Engineering (2019) 3 (1–6), (S2590007219300097), (10.1016/j.mne.2019.02.005)) Reviewed Open Access

Miyajima H., Masuda H., Watanabe K., Ishikawa K., Sekine M., Hori M.

Micro and Nano Engineering Vol. 3 page： 92 - 92 2019.5

Language：English Publishing type：Research paper (scientific journal) Publisher：Micro and Nano Engineering

The publisher regrets that we missed to publish the conflict of interest statement in the original article. The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper. The publisher would like to apologise for any inconvenience caused.

DOI： 10.1016/j.mne.2019.05.004

Open Access

Web of Science

Scopus

Chemical bonding structure in porous SiOC films (k < 2.4) with high plasma-induced damage resistance Reviewed Open Access

Miyajima H., Masuda H., Watanabe K., Ishikawa K., Sekine M., Hori M.

Micro and Nano Engineering Vol. 3 page： 1 - 6 2019.5

Authorship：Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：Micro and Nano Engineering

The chemical bonding structure of porous low-k carbon-doped silicon oxide (SiOC) films (k < 2.4) was engineered using plasma-enhanced chemical vapor deposition and electron-beam curing. The high carbon concentration in the SiOC films with di-methyl bonds ([dbnd]Si(–]CH3)2) is crucial for resistance to plasma-induced damage (PID) and prevention of moisture uptake after the plasma treatment. The mix of di-methyl bonds is believed to be the key to protecting the films from PID because the films retain their hydrophobic characteristics even after plasma treatment. Thus, control of the ratio of di-methyl bonds to mono-methyl bonds ([tbnd]Si–]CH3) in the as-deposited SiOC film is necessary. Selection of trimethyl silane as a precursor for film matrix formation resulted in excellent control of this ratio to obtain highly reliable low-k/Cu interconnects for high-performance logic devices.

DOI： 10.1016/j.mne.2019.02.005

Open Access

Web of Science

Scopus

Facile synthesis of SnO₂-graphene composites employing nonthermal plasma and SnO₂ nanoparticles-dispersed ethanol Reviewed

Borude Ranjit R., Sugiura Hirotsugu, Ishikawa Kenji, Tsutsumi Takayoshi, Kondo Hiroki, Hori Masaru

JOURNAL OF PHYSICS D-APPLIED PHYSICS Vol. 52 ( 17 ) 2019.4

Systematic diagnostics of the electrical, optical, and physicochemical characteristics of low-temperature atmospheric-pressure helium plasma sources Reviewed

Takeda Keigo, Yamada Hiromasa, Ishikawa Kenji, Sakakita Hajime, Kim Jaeho, Ueda Masashi, Ikeda Jun-ichiro, Akimoto Yoshihiro, Kataoka Yosky, Yokoyama Naoaki, Ikehara Yuzuru, Hori Masaru

JOURNAL OF PHYSICS D-APPLIED PHYSICS Vol. 52 ( 16 ) 2019.4

A 65-nm CMOS Fully Integrated Analysis Platform Using an On-Chip Vector Network Analyzer and a Transmission-Line-Based Detection Window for Analyzing Circulating Tumor Cell and Exosome Reviewed Open Access

Niitsu Kiichi, Nakanishi Taiki, Murakami Shunya, Matsunaga Maya, Kobayashi Atsuki, Karim Nissar Mohammad, Ito Jun, Ozawa Naoya, Hase Tetsunari, Tanaka Hiromasa, Sato Mitsuo, Kondo Hiroki, Ishikawa Kenji, Odaka Hidefumi, Hasegawa Yoshinori, Hori Masaru, Nakazato Kazuo

IEEE TRANSACTIONS ON BIOMEDICAL CIRCUITS AND SYSTEMS Vol. 13 ( 2 ) page： 470 - 479 2019.4

Effects of 3D structure on electrochemical oxygen reduction characteristics of Pt- nanoparticle-supported carbon nanowalls Reviewed

Imai Shun, Naito Kenichi, Kondo Hiroki, Cho Hyung Jun, Ishikawa Kenji, Tsutsumi Takayoshi, Sekine Makoto, Hiramatsu Mineo, Hori Masaru

JOURNAL OF PHYSICS D-APPLIED PHYSICS Vol. 52 ( 10 ) 2019.3

Control of sp2-C cluster incorporation of amorphous carbon films grown by H-radical-injection CH4/H2 plasma-enhanced chemical vapor deposition Reviewed

Sugiura, H; Jia, LY; Ohashi, Y; Kondo, H; Ishikawa, K; Tsutsumi, T; Hayashi, T; Takeda, K; Sekine, M; Hori, M

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( 3 ) 2019.3

Language：English Publishing type：Research paper (scientific journal) Publisher：Japanese Journal of Applied Physics

Amorphous carbon (a-C) thin films were deposited under the control of C2 radical density using radical-injection plasma-enhanced chemical vapor deposition (RI-PECVD) with CH4/H2 plasma. By actinometric monitoring of C2 emission intensities, the plasma parameters were precisely controlled by changing in CH4-containing plasma excitation power independent of H2 plasma excitation. The control of the incorporation of sp2-C clusters in the a-C films during the a-C film depositions is demonstrated by tailoring Raman positions vs. full widths at half maxima for the G band around 1580 cm-1 to the RI-PECVD parameters.

DOI： 10.7567/1347-4065/aafd49

Web of Science

Scopus

Effects of BCl₃ addition to Cl₂ gas on etching characteristics of GaN at high temperature Reviewed

Tanide Atsushi, Nakamura Shohei, Horikoshi Akira, Takatsuji Shigeru, Kohno Motohiro, Kinose Kazuo, Nadahara Soichi, Ishikawa Kenji, Sekine Makoto, Hori Masaru

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Vol. 37 ( 2 ) 2019.3

Effects of Ion Bombardment Energy Flux on Chemical Compositions and Structures of Hydrogenated Amorphous Carbon Films Grown by a Radical-Injection Plasma-Enhanced Chemical Vapor Deposition Reviewed

Sugiura, H; Kondo, H; Tsutsumi, T; Ishikawa, K; Hori, M

C-JOURNAL OF CARBON RESEARCH Vol. 5 ( 1 ) 2019.3

Electrochemical Reaction in Hydrogen Peroxide and Structural Change of Platinum Nanoparticle-Supported Carbon Nanowalls Grown Using Plasma-Enhanced Chemical Vapor Deposition Reviewed

Tomatsu, M; Hiramatsu, M; Kondo, H; Ishikawa, K; Tsutsumi, T; Sekine, M; Hori, M

C-JOURNAL OF CARBON RESEARCH Vol. 5 ( 1 ) 2019.3

Non-thermal plasma-activated medium modified metabolomic profiles in the glycolysis of U251SP glioblastoma Reviewed

Kurake Naoyuki, Ishikawa Kenji, Tanaka Hiromasa, Hashizume Hiroshi, Nakamura Kae, Kajiyama Hiroaki, Toyokuni Shinya, Kikkawa Fumitaka, Mizuno Masaaki, Hori Masaru

ARCHIVES OF BIOCHEMISTRY AND BIOPHYSICS Vol. 662 page： 83 - 92 2019.2

Remotely floating wire-assisted generation of high-density atmospheric pressure plasma and SF6-added plasma etching of quartz glass Reviewed

Thi-Thuy-Nga Nguyen, Sasaki Minoru, Odaka Hidefumi, Tsutsumi Takayoshi, Ishikawa Kenji, Hori Masaru

JOURNAL OF APPLIED PHYSICS Vol. 125 ( 6 ) 2019.2

Liquid dynamics in response to an impinging low-temperature plasma jet Reviewed International coauthorship

Brubaker T. R., Ishikawa K., Kondo H., Tsutsumi T., Hashizume H., Tanaka H., Knecht S. D., Bilen S. G., Hori M.

JOURNAL OF PHYSICS D-APPLIED PHYSICS Vol. 52 ( 7 ) 2019.2

Effect of electrical stimulation on proliferation and bone-formation by osteoblast-like cells cultured on carbon nanowalls scaffolds Reviewed

Ichikawa Tomonori, Tanaka Suiki, Kondo Hiroki, Ishikawa Kenji, Tsutsumi Takayoshi, Sekine Makoto, Hori Masaru

APPLIED PHYSICS EXPRESS Vol. 12 ( 2 ) 2019.2

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Papers - ISHIKAWA, Kenji