Papers - ISHIKAWA, Kenji
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Effects of Dissolved Oxygen in HF Solution on Silicon Surface Morphology Reviewed
Hiroki Ogawa, Kenji Ishikawa, Miki T. Suzuki, Yuka Hayami, and Shuzo Fujimura
Jpn. J. Appl. Phys. Vol. 34 ( 2B ) page： 732-736 1995.2
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FT-IR-RAS analysis of the structure of the SiO2/Si interface Reviewed
Kenji Ishikawa, Hiroki Ogawa, Carlos Inomata, Shuzo Fujimura, and Haruhisa Mori
Control of Semiconductor Interfaces, edited by I. Ohdomari, M. Oshima and A. Hiraki, (Elsevier Science B.V.) page： 447 1994
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Native Oxide Characterization on Silicon Surfaces Reviewed
Hiroki Ogawa, Carlos Inomata, Kenji Ishikawa, Shuzo Fujimura, and Haruhisa Mori
Control of Semiconductor Interfaces, edited by I. Ohdomari, M. Oshima and A. Hiraki, (Elsevier Science B.V.) page： 383 1994
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Observation of Thin SiO2 Films using IR-RAS Reviewed
Shuzo Fujimura, Kenji Ishikawa, and Haruhisa Mori
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2, edited by C. R. Helms and B. E. Deal, (Plenum Press) page： 91 1993
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New Analytical Method of SiO2 Structure by Infrared Reflection Absorption Spectroscopy (IR-RAS) Reviewed
Kenji Ishikawa, Hiroki Ogawa, Carlos Inomata, Shuzo Fujimura and Haruhisa Mori
MRS Proceedings Vol. 318 page： 425-431 1993