Papers - ISHIKAWA, Kenji
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Surface roughness development on ArF-photoresist studied by beam-irradiation of CF4 plasma Reviewed
Takuya Takeuchi, Kenji Ishikawa, Yuichi Setsuhara, Hiroki Kondo, Keigo Takeda, Makoto Sekine, Masaru Hori
J. Phys. D: Appl. Phys. Vol. 46 page： 102001 2013.2
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Etching-Enhancement Followed by Nitridation on Low-k SiOCH Film in Ar/C5F10O Plasma Reviewed
Yudai Miyawaki, Emi Shibata, Yusuke Kondo, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Hidekazu Okamoto, Makoto Sekine, and Masaru Hori
Japanese Journal of Applied Physics Vol. 52 ( 2 ) page： 020204 2013.1
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Impact of hydrogen radical injection plasma on fabrication of microcrystalline silicon thin film for solar cells Reviewed
Yusuke Abe, Sho Kawashima, Atsushi Fukushima, Ya Lu, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori
J. Appl. Phys. Vol. 113 ( 2 ) page： 033304 2013.1
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Highly selective etching of SiO2 over Si3N4 and Si in capacitivlly coupled plasma employing C5HF7 gas Reviewed
Yudai Miyawaki, Yusuke Kondo, Makoto Sekine, Kenji Ishikawa, Toshio Hayashi, Keigo Takeda, Hiroki Kondo, and Masaru Hori
Jpn. J. Appl. Phys. Vol. 52 ( 1 ) page： 016201 2013.1
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Development of high-density nitrogen radical source for low mosaicity and high rate growth of InGaN films in molecular beam epitaxy Reviewed
Shang Chen, Yohjiro Kawai, Hiroki Kondo, Kenji Ishikawa, Keigo Takeda, Hiroyuki Kano, Makoto Sekine, Hiroshi Amano, and Masaru Hori
Jpn. J. Appl. Phys. Vol. 52 ( 1 ) page： 021001 2013.1
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Development of the sputtering yields of ArF photoresist after the onset of argon ion bombardment Reviewed
Takuya Takeuchi, Carles Corbella, Simon Grosse-Kreul, Achim von Keudell, Kenji Ishikawa, Makoto Sekine, and Masaru Hori
J. Appl. Phys. Vol. 113 ( 1 ) page： 014306 2013.1
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Surface loss probability of H radicals on silicon thin films in SiH4/H2 plasma Reviewed
Yusuke Abe, Atsushi Fukushima, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori
J. Appl. Phys. Vol. 113 ( 1 ) page： 013303 2013.1
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Individual roles for atoms and ions during hydrogen atom passivation of surface-defects on GaN created by plasma-etching Reviewed
Shang Chen, Kenji Ishikawa, Yi Lu, Ryosuke Kometani, Hiroki Kondo, Yutaka Tokuda, Takashi Egawa, Hiroshi Amano, Makoto Sekine, and Masaru Hori
Jpn. J. Appl. Phys. Vol. 51 ( 11 ) page： 111002-1:6 2012.10
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Critical flux ratio of hydrogen radical to fi lm precursor in microcrystalline silicon deposition for solar cells Reviewed
Yusuke Abe, Atsushi Fukushima, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori
Appl. Phys. Lett. Vol. 101 ( 17 ) page： 172109-1:4 2012.10
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Decomposition Removal of the Polymers for Resist Material by the Hydrogen Radical Generated Using Tungsten Hot-Wire Catalyzer Reviewed Open Access
Yu Arai, Makoto Watanabe, Akihiko Kono, Tadaaki Yamagishi, Kenji Ishikawa, Masaru Hori, Hideo Horibe
Kobunshi Ronbunshu Vol. 69 ( 6 ) page： 266 - 273 2012.9
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As-grown deep-level defects in n-GaN grown by metal-organic chemical vapor deposition on freestanding GaN Reviewed
Shang Chen, Unhi Honda, Tatsunari Shibata, Toshiya Matumura, Yutaka Tokuda, Kenji Ishikawa, Masaru Hori, Hiroyuki Ueda, Tsutomu Uesugi, and Tetsu Kachi
J. Appl. Phys. Vol. 112 ( 5 ) page： 053513-1:4 2012.9
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Real-time In Situ Electron Spin Resonance Measurements on Fungal Spores of Penicillium digitatum during Exposure of Oxygen Plasmas Reviewed
Kenji Ishikawa, Hiroko Moriyama, Hiromasa Tanaka, Kazuhiro Tamiya, Hiroshi Hashizume, Takayuki Ohta, Masafumi Ito, Sachiko Iseki, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori
Appl. Phys. Lett. Vol. 101 ( 1 ) page： 013704-1:4 2012.7
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Photoluminescence recovery by in-situ exposure of plasma-damaged n-GaN to atomic hydrogen at room temperature Reviewed
Shang Chen, Yi Lu, Ryosuke Kometani, Kenji Ishikawa, Hiroki Kondo, Yutaka Tokuda, Makoto Sekine, and Masaru Hori
AIP advance Vol. 2 ( 2 ) page： 022149-1:6 2012.6
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Ultrahigh-Speed Synthesis of Nanographene Using Alcohol In-Liquid Plasma Reviewed
Tatsuya Hagino, Hiroki Kondo, Kenji Ishikawa, Hiroyuki Kano, Makoto Sekine, Masaru Hori
Appl. Phys. Express Vol. 5 ( 3 ) page： 035101-1:3 2012.3
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Quantum Chemical Investigation of Si Chemical Dry Etching by Flowing NF3 into N2 Downflow Plasma Reviewed
Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, Masaru Hori, Akihiro Kono, and Koukou Suu
Jpn. J. Appl. Phys. Vol. 51 ( 2 ) page： 026505-1:5 2012.2
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Direct current superposed dual-frequency capacitively-coupled-plasma in selective etch of SiOCH over SiC Reviewed
Tsuyoshi Yamaguchi, Tetsuya Komuro, Chishio Koshimizu, Seigo Takashima, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori
J. Phys. D: Appl. Phys. Vol. 45 ( 2 ) page： 025203-1:7 2012.1
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Vacuum Ultraviolet and Ultraviolet Radiation-Induced Effect of Hydrogenated Silicon Nitride Etching: Surface Reaction Enhancement and Damage Generation Reviewed
Masanaga Fukasawa, Yudai Miyawaki, Yusuke Kondo, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Hiroyasu Matsugai, Takayoshi Honda, Masaki Minami, Fumikatsu Uesawa, Masaru Hori, and Tetsuya Tatsumi
Jpn. J. Appl. Phys. Vol. 51 ( 2 ) page： 026201-1:7 2012.1
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Feature Profiles on Plasma Etch of Organic Films by a Temporal Control of Radical Densities and Real-Time Monitoring of Substrate Temperature Reviewed
Hiroshi Yamamoto, Hiroki Kuroda, Masafumi Ito, Takayuki Ohta, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, and Masaru Hori
Jpn. J. Appl. Phys. Vol. 51 ( 1 ) page： 016202-1:6 2012.1
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Quantum Chemical Investigation for Chemical Dry Etching of SiO2 by Flowing NF3 into H2 Downflow Plasma Reviewed
Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, Masaru Hori, Akihiro Kono, and Koukou Suu
Jpn. J. Appl. Phys. Vol. 51 ( 1 ) page： 016201-1:6 2012.1
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Electron Spin Resonance (ESR) Observation of Radicals on Biological Organism Interacted with Plasmas Reviewed
Kenji Ishikawa, Hiroko Moriyama, Kazuhiro Tamiya, Hiroshi Hashizume, Takayuki Ohta, Masafumi Ito, Sachiko Iseki, Hiromasa Tanaka, Keigo Takeda, Hiroki Kondo, Makoto Sekine and Masaru Hori
MRS Online Proceedings Library Vol. 1469 2012