Papers - ISHIKAWA, Kenji
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In vacuo measurements of dangling bonds created during Ar-diluted fluorocarbon plasma etching of silicon dioxide films Reviewed
Kenji Ishikawa, Mitsuru Okigawa, Yasushi Ishikawa, Seiji Samukawa, and Satoshi Yamasaki
Appl. Phys. Lett. Vol. 86 page： 264104:1-3 2005.6
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Mass-analyzed CFx+ (x=1,2,3) ion beam study on selectivity of SiO2-to-SiN etching and a-C:F film deposition Reviewed
Ken-ichi Yanai, Kazuhiro Karahashi, Kenji Ishikawa, and Moritaka Nakamura
J. Appl. Phys. Vol. 97 ( 5 ) page： 053302:1-6 2005.2
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Etching yield of SiO2 irradiated by F+ CFx+ (x=1,2,3) ion with energies from 250 to 2000 eV Reviewed
Kazuhiro Karahashi, Ken-ichi Yanai, Kenji Ishikawa, Hideo Tsuboi, Kazuaki Kurihara, and Moritaka Nakamura
J. Vac. Sci. Technol. A Vol. 22 ( 4 ) page： 1166 2004.6
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ドライ洗浄技術－半導体製造－ Reviewed
伊藤隆司、杉野林志、石川健治
精密工学会誌 Vol. 70 page： 894 2004
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Transitional change to amorphous fluorinated carbon film deposition under energetic irradiation of mass-analyzed carbon mono-fluoride ions on silicon dioxide surfaces Reviewed
Kenji Ishikawa, Kazuhiro Karahashi, Hideo Tsuboi, Ken-ichi Yanai, and Moritaka Nakamura
J. Vac. Sci. Technol. A Vol. 21 page： L1-L3 2003.6
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Surface and gas-phase observations of Ar diluted c-C4F8 plasma by using real-time infrared spectroscopy and planar laser-induced fluorescence Reviewed
Kenji Ishikawa, Shigenori Hayashi, and Makoto Sekine
J. Appl. Phys. Vol. 93 ( 3 ) page： 1403-1408 2003.2
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Vapor Treatment of Copper Surface Using Organic Acids Reviewed
Kenji Ishikawa, Teruo Yagishita and Moritaka Nakamura
MRS Proceedings Vol. 766 2003
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In-vacuo electron spin resonance study on amorphous fluorinated carbon films for understanding of surface chemical reactions in plasma etching Reviewed
Kenji Ishikawa, Shoji Kobayashi, Mitsuru Okigawa, Makoto Sekine, Satoshi Yamasaki, Tetsuji Yasuda, and Junichi Isoya
Appl. Phys. Lett. Vol. 81 ( 10 ) page： 1773-1775 2002.9
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Planar laser-induced fluorescence of fluorocarbon radicals in oxide etch process plasma Reviewed
Shigenori Hayashi, Kenji Ishikawa, and Makoto Sekine
Jpn. J. Appl. Phys. Vol. 41 ( 4A ) page： 2207-2212 2002.4
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Direct observation of surface dangling bonds during plasma process: chemical reactions during H2 and Ar plasma treatments Reviewed
Satoshi Yamasaki, Ujjwal Das, and Kenji Ishikawa
Thin Solid Films Vol. 407 ( 1-2 ) page： 139-143 2002.2
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Early-stage modification of a silicon oxide surface in fluorocarbon plasma for selective etching over silicon Reviewed
Kenji Ishikawa, and Makoto Sekine
J. Appl. Phys. Vol. 91 ( 3 ) page： 1661-1666 2002.2
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In-situ time-resolved infrared spectroscopic study of silicon-oxide surface during selective etching over silicon in fluorocarbon plasma Reviewed
Kenji Ishikawa, and Makoto Sekine
Jpn. J. Appl. Phys. Vol. 39 page： 6990-6995 2000.12
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Asymmetric peak line shape on infrared dielectric function spectra of thermally grown silicon dioxide films Reviewed
Kenji Ishikawa, Kunihiro Suzuki, and Shigeru Okamura
J. Appl. Phys. Vol. 88 page： 7150-7156 2000
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Thickness-deconvolved structural properties of thermally grown silicon dioxide films Reviewed
Kenji Ishikawa, Hiroki Ogawa, and Shuzo Fujimura
J. Appl. Phys. Vol. 86 page： 3472-3474 1999
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Contribution of interface roughness to infrared spectra of thermally grown silicon dioxide films Reviewed
Kenji Ishikawa, Hiroki Ogawa, and Shuzo Fujimura
J. Appl. Phys. Vol. 85 page： 4076-4082 1999
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Analysis of native oxide growth process on an atomically flattened and hydrogen terminated Si(111) surface in pure water using fourier transformed infrared reflection absorption spectroscopy Reviewed
Shuzo Fujimura, Kenji Ishikawa, and Hiroki Ogawa
J. Vac. Sci. Technol. A Vol. 16 ( 1 ) page： 375-381 1998.1
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Dependence of TO and LO mode frequency of thermally grown silicon dioxide films on annealing temperature Reviewed
Kenji Ishikawa, Yuji Uchiyama, Hiroki Ogawa, and Shuzo Fujimura
Appl. Surf. Sci. Vol. 117/118 page： 212-215 1997.6
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Infrared spectroscopy study of the RCA standard clean chemical oxides and their sequencing Reviewed
Carlos Inomata, Hiroki Ogawa, Kenji Ishikawa, and Shuzo Fujimura
J. Electrochem. Soc. Vol. 143 ( 9 ) page： 2995-3000 1996.9
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Initial stage of native oxide growth on hydrogen terminated silicon (111) surfaces Reviewed
Hiroki Ogawa, Kenji Ishikawa, Carlos Inomata, and Shuzo Fujimura
J. Appl. Phys. Vol. 79 ( 1 ) page： 472-477 1996.1
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Observation of Oxygen Exposed Hydrogen Terminated Silicon Surface Reviewed
Hiroki Ogawa, Kenji Ishikawa, M. Aoki, Shuzo Fujimura, N. Ueno, Yasuhiro Horiike, Y. Harada
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 3, edited by H.Z. Massoud, E.H. Poindexter, and C.R. Helms, (The Electrochemical Society, NJ) page： 428 1996