Presentations -
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Estimation of the quality of lysozyme crystal grown under controlled driving force International conference
"in the 9th International Conference on Crystallization of Biological Macromolecules, Jena, Germany, March 23-28 (2002)."
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Melt growth of SiGe bulk crystals with uniform composition and SiGe multicrystals with microscopic compositional distribution for heterostructure device applications International conference
"in International Forum on Science and Technology of Crystal Growth, Sendai, Japan, March 3-4 (2002)."
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Si/multicrystalline-SiGe heterostructure as a candidate for solar cells with high conversion efficiency International conference
"in 29th IEEE Photovoltaic Specialists Conference, New Orleans, Louisiana, USA, May 20-24 (2002)."
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Grain growth of polycrystalline Si thin film for solar cells and its crystal properties International conference
"in 29th IEEE Photovoltaic Specialists Conference, New Orleans, Louisiana, USA, May 20-24 (2002)."
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Growth and optical properties of SiGe multicrystals with microscopic compositional distribution for new Si/SiGe heterostructural solar cells International conference
"in PV in Europe from PV Technology to Energy Solutions Conference and Exhibition, Palazzo dei Congressi, Rome, Italy, October 7-11 (2002)"
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Effect of growth temperature on surface morphology and crystal quality of Si thin-film by liquid phase epitaxial growth technique International conference
"PV in Europe from PV Technology to Energy Solutions Conference and Exhibition, Palazzo dei Congressi, Roma, Italy, 7-11 October 2002"
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Fabrication of SiGe substrate with uniform composition and its application to strain-controlled epitaxy for group-IV heterostructures International conference
"in the second international workshop on new group-IV semiconductors, Kofu, Japan, June 2-4 (2002)"
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Built-in strain modulation in multicrystalline SiGe with microscopic compositional distribution International conference
"26 th International Conference on Physics of Semiconductors, Edinburgh, UK, July 29-August 2 (2002)"
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Growth of SiGe bulk crystal with uniform composition by utilizing in situ monitoring of the crytal-solution interface International conference
"in the First International Symposium on Crystal Science and Technology, Yamanashi Univ.,Kofu, Japan, June 5 (2002)"
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Impurity effect on the quality of protein crystals evaluated by the X-ray diffraction method: dependency on the supersaturation International conference
"in the 5th China-Japan Workshop on Microgravity Sciences, Dunhuang, Gansu Province, China, Sep. 03-06 (2002)."
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In-situ observation of the Marangoni convection in a NaCl aqueous soution under microgravity International conference
in The Thirteenth International Conference on Crystal Growth in Conjunction with The Eleventh International Conference on Vapor Growth and Epitaxy, Kyoto, Japan, July 30-August 4 (2001)
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Control of the compositional distribution of SiGe bulk crystal for ptoelectronic Applications International conference
"in The 17th Korean Association of Crystal Growth Fall meeting, Hanseo University, Seosan, Korea, November 8-10 (2001)."
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New determination method for mutual diffusion coefficient of metal and semiconductor solutions based on Fick's first law International conference
"in Eleventh International Conference on Liquid and Amorphous Metals (LAM11), Yokohama, Japan, September 9-14 (2001)."
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Successful fabrication of SiGe bulk crystal with uniform composition as a substrate for Si-based heterostructures International conference
"in First International Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, Sendai, Japan, January 21-23 (2001)."
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Growth of SiGebulk crystal with uniform composition International conference
"in UK-Japan Co-operative seminar on Electronic Materials and Devices, St. Albains, UK, March 7-9 (2001)."
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In-situ measurement of concentration distributions in a high temperature solution International conference
"in The University of Tokyo and National Cheng Kung University Joint Workshop on Advanced Semiconductor Materials and Devices, Tainan, Taiwan, March 15 (2001)."
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Growth of SiGe bulk crystal with uniform composition by the muticomponent zone-melting method International conference
"in The University of Tokyo and National Cheng Kung University Joint Workshop on Advanced Semiconductor Materials and Devices, Tainan, Taiwan, March 15 (2001)."
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Melt growth of multicrystalline SiGe with large compositional distribution for new solar cell applications International conference
"in European Materials Research Society 2001 Spring Meeting, Strasbourg, France, June 5-8 (2001)"
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Fabrication of SiGe bulk crystals with uniform composition as substrates for Si-based heterostructures International conference
"in European Materials Research Society 2001 Spring Meeting, Strasbourg, France, June 4-8 (2001)"
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Realization of SiGe bulk crystal with compositional uniformity over 20mm by controlling the growth temperature utilizing in situ monitoring system International conference
"in the Thirteenth International conference on Crystal Growth in Conjunction with the Eleventh International Conference on Vapor Growth and Epitaxy, July 30-August 4 (2001)."