Presentations -
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液相法による AlN 多結晶体合成とMg 添加効果
水野恒平, 宇治原徹, 竹田美和, 青木祐一, 竹内幸久, 井上 哲
日本金属学会2010年秋期（第147回）大会, 北海道大学, 2010年9月25-27日
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Pulsed spin-polarized electron source toward a transmission electron microscope International conference
17th International Microscopy Congress I1501, Rio de Janeiro, Brazil, September 19-24 (2010)
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Development of a Spin-Polarized and Short-Pulsed Transmission Electron Microscope International conference
17th International Microscopy Congress I1501, Rio de Janeiro, Brazil, September 19-24 (2010)
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High brightness electron gun test facility at KEK International conference
Workshop on Sources of Polarized Leptons and High Brightness Electron Beams, Bonn, Germany, September 21-24 (2010)
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Elimination of local thickness modulation in GaAs/GaAsP strained superlattices for high spin-polarization photocathodes International conference
Workshop on Sources of Polarized Leptons and High Brightness Electron Beams, Bonn, Germany, September 21-24 (2010)
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AlGaAs中間層の導入による透過型 GaAs/GaAsP歪み超格子スピン偏極フォトカソードの高量子効率化
市橋史朗, 金 秀光, 桑原真人, 山本尚人, 前多悠也, 橋本和弥, 渕 真悟, 奥見正治, 宇治原徹, 中西 彊, 竹田美和
第71回応用物理学会学術講演会, 長崎大学, 文教キャンパス, 2010年9月14-17日
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MBE法によるGaAs基板上のLnFeAs(O,F)超伝導薄膜の成長
川口昂彦, 上村彦樹, 大野俊也, 田渕雅夫, 宇治原徹, 竹中康司, 竹田美和, 生田博志
第71回応用物理学会学術講演会, 長崎大学, 文教キャンパス, 2010年9月14-17日
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MBE法によるMgO基板上へのNdFeAs(O,F)薄膜の成長
上村彦樹, 川口昂彦, 大野俊也, 田渕雅夫, 宇治原徹, 竹中康司, 竹田美和, 生田博志
第71回応用物理学会学術講演会, 長崎大学, 文教キャンパス, 2010年9月14-17日
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GaAs上InAs積層量子ドットの発光のスペーサー層厚さ制御による広帯域化
谷 和馬, 渕 真悟, 宇治原徹, 竹田美和
第71回応用物理学会学術講演会, 長崎大学, 文教キャンパス, 2010年9月14-17日
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6H-SiC上への3C-SiCヘテロ成長における多形変換過程
関 和明, アレキサンダー, 小澤茂太, 宇治原徹, Patrick Chaudouet, Didier Chaussende, 竹田美和
第71回応用物理学会学術講演会, 長崎大学, 文教キャンパス, 2010年9月14-17日
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MBE法によるLnFeAs(O,F)超伝導薄膜（Ln=La,Nd）の成長と物性評価
大野俊也, 川口昂彦, 上村彦樹, 田渕雅夫, 宇治原徹, 竹中康司, 竹田美和, 生田博志
日本物理学会 2010年秋季大会, 2010年9月23-26日
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Defect evaluation of SiC crystal grown by solution method: The study bysynchrotron X-ray topography and etching method International conference
8th European Conference on Silicon Carbide and Related Materials, Oslo, Norway, August 29-September 2 (2010)
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SiC polytype grown on {0001} seed crystal by solution growth International conference
8th European Conference on Silicon Carbide and Related Materials, Oslo, Norway, August 29- September 2 (2010)
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Effects of GaAs inter-layer on uniformity of GaAs/GaAsP strained superlattice for spin-polarized photocathodes International conference
The 16th International Conference on Crystal Growth (ICCG-16), HE6 Beijing International Convention Center, Beijing China, August 8-13 (2010)
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Formation mechanism of 3C-SiC on 6H-SiC (0001) by solution growth International conference
The 16th International Conference on Crystal Growth(ICCG-16) in conjunction with The 14th International Conference on Vapor Growth and Epitaxy(ICVGE-14), Beijing, China, August 8-13 (2010)
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Solution growth of high-quality and large-area 3C-SiC International conference
The 16th International Conference on Crystal Growth(ICCG-16) in conjunction with The 14th International Conference on Vapor Growth and Epitaxy(ICVGE-14), Beijing, China, August 8-13 (2010)
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Improvement of quantum efficiency by introduction of AlGaAs inter-layer in transmission-type spin-polarized photocathode International conference
The 16th International Conference on Crystal Growth(ICCG-16) in conjunction with The 14th International Conference on Vapor Growth and Epitaxy(ICVGE-14), Beijing, China, August 8-13 (2010)
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Increase of Spectral Width of Stacked InAs Quantum Dots on GaAs by Controlling Spacer Layer Thickness International conference
The 16th International Conference on Crystal Growth(ICCG-16) in conjunction with The 14th International Conference on Vapor Growth and Epitaxy(ICVGE-14), Beijing, China, August 8-13 (2010)
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MBE growth and characterization of superconducting NdFeAs(O,F) epitaxial films on GaAs(001) International conference
The 16th International Conference on Crystal Growth(ICCG-16) in conjunction with The 14th International Conference on Vapor Growth and Epitaxy(ICVGE-14), Beijing, China, August 8-13 (2010)
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Effects of defects and local thickness modulation on spin-polarization in photocathodes based on GaAs/GaAsP strained superlattices International conference
The 23rd International Vacuum Nanoelectronics Conference (IVNC 2010), 8.5, Palo Alto, California, USA, July 26-30 (2010)