Presentations -
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Reduction of all types of dislocation in 4H-SiC crystal by two-step solution growth International conference
K. Murayama, T. Hori, S. Harada, S. Xiao, M. Tagawa, T. Ujihara
The 11th European Conference on Silicon Carbide and Related Materials (ECSCRM)
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In-situ observation during solution growth of SiC by X-ray transmission method International conference
T. Sakai, M. Kado, H. Daikoku, S. Harada, T. Ujihara
The 11th European Conference on Silicon Carbide and Related Materials (ECSCRM)
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Formation of basal plane dislocations introduced by collision of macrosteps on growth surface during SiC solution growth International conference
T. Hori, K. Murayama, S. Harada, S. Xiao, M. Tagawa, T. Ujihara
The 11th European Conference on Silicon Carbide and Related Materials (ECSCRM)
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Solvent design for high-purity SiC solution growth International conference
S. Harada, G. Hatasa, K. Murayama, T. Kato, M. Tagawa, T. Ujihara
The 11th European Conference on Silicon Carbide and Related Materials (ECSCRM)
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半導体光陰極を用いた次世代透過電子顕微鏡の開発
桑原 真人, 青木 幸太, 鈴木 潤士, 宇治原 徹, 齋藤 晃, 田中 信夫
2016年第77回応用物理学会秋季学術講演会
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n 型 4H-SiC 中 SSF 起因フォトルミネッセンスの時間分解測定
加藤 正史, 片平 真哉, 市川 義人, 市村 正也, 原田 俊太
2016年第82回応用物理学会秋季学術講演会
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機械学習を用いた溶液成長における過飽和度分布の予測
角岡 洋介, 小久保 信彦, 原田 俊太, 田川 美穂, 宇治原 徹
2016年第81回応用物理学会秋季学術講演会
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X 線透過法による溶液法 SiC 結晶成長の溶液表面形状の経時変化の観察
酒井 武信, 加渡 幹尚, 大黒 寛典, 原田 俊太, 宇治原 徹
2016年第80回応用物理学会秋季学術講演会
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X 線透過法による溶液法 SiC 結晶成長のその場観察
酒井 武信, 加渡 幹尚, 大黒 寛典, 原田 俊太, 宇治原 徹
2016年第79回応用物理学会秋季学術講演会
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AlN 溶液成長における機械学習を用いた溶液流動の高効率予測
小久保 信彦, 角岡 洋介, 原田 俊太, 田川 美穂, 宇治原 徹
2016年第78回応用物理学会秋季学術講演会
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TSSG 法による SiC 結晶成長炉内移動現象に関する数値シミュレーション
山本 卓也、岡野 泰則、宇治原 徹
化学工学第48回秋季大会
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Controlling two-dimensional structuer of DNA-linked Au nanoparticle lattices on supported lipid bilayer International conference
T. Isogai, N. Yoshida, H. Sumi, R. Tero, S. Harada, T. Ujihara, M. Tagawa
The 22nd International Conference on DNA Computing and Molecular Programming (DNA22)
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Control of Macrostep Structure for High-Quality SiC Grown by Liquid Phase Epitaxy International conference
T. Ujihara, C. Zhu, K. Murayama, S. Harada, M.Tagawa
the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
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Enantioselective bias on circularly polarized laser-induced chiral crystallization from NaClO3 solution with plasmonic Ag nanoparticles International conference
H. Niinomi, T. Sugiyama, M. Tagawa, M. Maruyama, T. Omatsu, T. Ujihara, Y. Mori
the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
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The realization of high-quality 4H-SiC C-face grown crystals by controlling the macrosteps formation during solution growth International conference
S. Y. Xiao, S. Harada, P. L. Chen, K. Murayama, T.Ujihara
the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
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Effect of Crystal Shape on Solution Flow and Surface Morphology in Solution Growth of SiC International conference
D. Koike, T. Umezaki, K. Murayama, K. Aoyagi, S.Harada, M. Tagawa, T. Sakai, T. Ujihara
the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
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Numerical Investigation of Transport Phenomenaduring Crystal Growth of SiC by the Induction Heating TSSG Method International conference
N. Adkar, T. Yamamoto, Y. Okano, T. Ujihara, S. Dost
the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
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Two-step growth of SiC solution growth for reduction of dislocations International conference
K. Murayama, T. Hori, S. Harada, S. Xiao, M.Tagawa, T. Ujihara
the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
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Threading Screw Dislocation Conversion by Macrosteps during SiC Solution Growth for High-quality Crystals International conference
S. Harada, K. Murayama, S. Xiao, F. Fujie, T.Sakai, M. Tagawa, T. Ujihara
the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
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Morphology of AlN whiskers grown by reacting N2 gas and Al vapor International conference
M. Matsumoto, H. Saitou, Y. Takeuchi, S. Harada, M. Tagawa, T. Ujihara
the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)