論文 - 天野 浩
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Control of p-type conduction in a-plane GaN grown on sapphire r-plane substrate 査読有り
Tsuchiya Yosuke, Okadome Yoshizane, Honshio Akira, Miyake Yasuto, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. 44 巻 ( 0 ) 頁： L1516-L1518 2005年
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Flat (11-20) GaN thin film on precisely offset-controlled (11-02) sapphire substrate 査読有り
Imura Masataka, Hoshino Akira, Nakano Kiyotaka, Tsuda Michinobu, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. 44 巻 ( 0 ) 頁： 7418-7420 2005年
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High-efficiency nitride-based light-emitting diodes with moth-eye structure 査読有り
Kasugai Hideki, Miyake Yasuto, Honshio Akira, Mishima Shunsuke, Kawashima Takeshi, Iida Kazuyoshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Kinoshita Hiroyuki, Shiomi Hiromu
Jpn. J. Appl. Phys. 44 巻 ( 0 ) 頁： 7414-7417 2005年
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Impact of H2-preannealing of the sapphire substrate on the crystallinity of low-temperature-deposited AlN buffer layer 査読有り
Tsuda Michinobu, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. 44 巻 ( 0 ) 頁： 3913-3917 2005年
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Vertical growth of carbon nanowalls using rf plasma-enhanced chemical vapor deposition 査読有り
Shiji K, Hiramatsu M, Enomoto A, Nakamura M, Amano H, Hori M
Diamond and Related Materials 14 巻 ( 0 ) 頁： 831-834 2005年
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UV laser diode with 3509-nm-lasing wavelength grown by hetero-epitaxial-lateral overgrowth technology 査読有り
Kamiyama Satoshi, Iida Kazuyoshi, Kawashima Takeshi, Kasugai Hideki, Mishima Shunsuke, Honshio Akira, Miyake Yasuto, Iwaya Motoaki, Amano Hiroshi, Akasaki Isamu
IEEE Journal of Selected Topics in Quantum Electronics 11 巻 ( 0 ) 頁： 1069-1073 2005年
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Free-to-bound radiative recombination in highly conducting InN epitaxial layers 査読有り
Arnaudov B, Paskova T, Paskov P P, Magnusson B, Valcheva E, Monemar B, Lu H, Schaff W J, Amano H, Akasaki I
Superlattices and Microstructures 36 巻 ( 0 ) 頁： 563-571 2004年
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High-quality Al012Ga088N film with low dislocation density grown on facet-controlled Al012Ga088N by MOVPE 査読有り
Kawashima Takeshi, Iida Kazuyoshi, Miyake Yasuto, Honshio Akira, Kasugai Hideki, Imura Masataka, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth 272 巻 ( 0 ) 頁： 377-380 2004年
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Laser diode of 3509nm wavelength grown on sapphire substrate by MOVPE 査読有り
Iida Kazuyoshi, Kawashima Takeshi, Miyazaki Atsushi, Kasugai Hideki, Mishima Syunsuke, Honshio Akira, Miyake Yasuto, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth 272 巻 ( 0 ) 頁： 270-273 2004年
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Time resolved photoluminescence study of Si modulation doped GaN/Al093N multiple quantum wells 査読有り
Haratizadeh H, Monemar B, Paskov P P, Holtz P O, Pozina G, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi B: Basic Research 241 巻 ( 0 ) 頁： 1124-1133 2004年
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Defect and stress control of AlGaN for fabrication of high performance UV light emitters 査読有り
Amano H, Miyazaki A, Iida K, Kawashima T, Iwaya M, Kamiyama S, Akasaki I, Liu R, Bell A, Ponce F A, Sahonta S, Cherns D
Physica Status Solidi A: Applied Research 201 巻 ( 0 ) 頁： 2679-2685 2004年
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Optical investigation of AlGaN/GaN quantum wells and superlattices 査読有り
Monemar B, Paskov P P, Haradizadeh H, Bergman J P, Valcheva E, Darakchieva V, Arnaudov B, Paskova T, Holtz P O, Pozina G, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 201 巻 ( 0 ) 頁： 2251-2258 2004年
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Mie Resonances, Infrared Emission, and the Band Gap of InN 査読有り
Shubina T V, Ivanov S V, Jmerik V N, Solnyshkov D D, Vekshin V A, Kop'ev P S, Vasson A, Leymarie J, Kavokin A, Amano H, Shimono K, Kasic A, Monemar B
Physical Review Letters 92 巻 ( 0 ) 頁： 117407/1-117407/4 2004年
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The generation of misfit dislocations in facet-controlled growth of AlGaN/GaN films 査読有り
Cherns D, Sahonta S-L, Liu R, Ponce F A, Amano H, Akasaki I
Appl. Phys. Lett. 85 巻 ( 0 ) 頁： 4923-4925 2004年
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Spatial variation of luminescence from AlGaN grown by facet controlled epitaxial lateral overgrowth 査読有り
Bell A, Liu R, Parasuraman U K, Ponce F A, Kamiyama S, Amano H, Akasaki I
Appl. Phys. Lett. 85 巻 ( 0 ) 頁： 3417-3419 2004年
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Photoluminescence study of Si-doped GaN/Al007Ga093N multiple quantum wells with different dopant position 査読有り
Haratizadeh H, Monemar B, Paskov P P, Bergman J P, Sernelius B E, Holtz P O, Iwaya M, Kamiyama S, Amano H, Akasaki I
Appl. Phys. Lett. 84 巻 ( 0 ) 頁： 5071-5073 2004年
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Fabrication of vertically aligned carbon nanowalls using capacitively coupled plasma-enhanced chemical vapor deposition assisted by hydrogen radical injection 査読有り
Hiramatsu M, Shiji K, Amano H, Hori M
Appl. Phys. Lett. 84 巻 ( 0 ) 頁： 4708-4710 2004年
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Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels 査読有り
Arnaudov B, Paskova T, Paskov P P, Magnusson B, Valcheva E, Monemar B, Lu H, Schaff W J, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics 69 巻 ( 0 ) 頁： 115216/1-115216/5 2004年
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3509 nm UV laser diode grown on low-dislocation-density AlGaN 査読有り
Iida Kazuyoshi, Kawashima Takeshi, Miyazaki Atsushi, Kasugai Hideki, Mishima Syunsuke, Honshio Akira, Miyake Yasuto, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters & Express Letters 43 巻 ( 0 ) 頁： L499-L500 2004年
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Study on the seeded growth of AlN bulk crystals by sublimation 査読有り
Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Takagi Takashi, Noro Tadashi
Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers 43 巻 ( 0 ) 頁： 7448-7453 2004年