論文 - 天野 浩
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Heteroepitaxy of group III nitrides for device applications 査読有り
Amano H, Takeuchi T, Sakai H, Yamaguchi S, Wetzel C, Akasaki I
Materials Science Forum 264-268 巻 ( 0 ) 頁: 1115-1120 1998年
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Valence band splitting and luminescence Stokes shift in GaInN/GaN thin films and multiple quantum well structures 査読有り
Wetzel C, Takeuchi T, Amano H, Akasaki I
J. Crystal Growth 189/190 巻 ( 0 ) 頁: 621-624 1998年
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Stimulated emission with the longest wavelength in the blue region from GaInN/GaN multi-quantum well structures 査読有り
Sakai Hiromitsu, Takeuchi Tetsuya, Sota Shigetoshi, Katsuragawa Maki, Komori Miho, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth 189/190 巻 ( 0 ) 頁: 831-836 1998年
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Photoconductivity in n-type modulation-doped GaN/AlGaN heterostructures 査読有り
Buyanov A V, Bergman J P, Sandberg J A, Sernelius B E, Holtz P O, Dalfors J, Monemar B, Amano H, Akasaki I
J. Crystal Growth 189/190 巻 ( 0 ) 頁: 753-757 1998年
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Thermal ionization energy of Si and Mg in (Al,Ga)N 査読有り
Katsuragawa Maki, Sota Shigetoshi, Komori Miho, Anbe Chitoshi, Takeuchi Tetsuya, Sakai Hiromitsu, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth 189/190 巻 ( 0 ) 頁: 528-531 1998年
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Crystal quality and surface structure of sapphire and buffer layers on sapphire revealed by crystal truncation rod scattering 査読有り
Tabuchi Masao, Matsumoto Nobuhiro, Takeda Yoshikazu, Takeuchi Tetsuya, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth 189/190 巻 ( 0 ) 頁: 291-294 1998年
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The dependence of the band gap on alloy composition in strained AlGaN on GaN 査読有り
Steude G, Hofmann D M, Meyer B K, Amano H, Akasaki I
Physica Status Solidi B: Basic Research 205 巻 ( 0 ) 頁: R7-R8 1998年
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Structural and optical properties of AlInN and AlGaInN on GaN grown by metalorganic vapor phase epitaxy 査読有り
Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Kato Hisaki, Takeuchi Tetsuya, Wetzel Christian, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth 195 巻 ( 0 ) 頁: 309-313 1998年
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The residual donor binding energy in AlGaN epitaxial layers 査読有り
Steude G, Hofmann D M, Meyer B K, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 165 巻 ( 0 ) 頁: R3-R4 1998年
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On the nature of radiative recombination processes in GaN 査読有り
Wetzel Christian, Amano Hiroshi, Akasaki Isamu
Institute of Physics Conference Series 156 巻 ( 0 ) 頁: 239-244 1998年
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Effects of defect scattering on the photoluminescence of exciton-polaritons in n-GaN 査読有り
Buyanova I A, Bergman J P, Monemar B, Amano H, Akasaki I, Wysmolek A, Lomiak P, Baranowski J M, Pakula K, Stepniewski R, Korona K P, Grzegory I, Bockowski M, Porowski S
Solid State Communications 105 巻 ( 0 ) 頁: 497-501 1998年
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Optical band gap in Ga1-xInxN (0<x<02) on GaN by photoreflection spectroscopy 査読有り
Wetzel C, Takeuchi T, Yamaguchi S, Katoh H, Amano H, Akasaki I
Appl. Phys. Lett. 73 巻 ( 0 ) 頁: 1994-1996 1998年
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Observation of photoluminescence from Al1-xInxN heteroepitaxial films grown by metalorganic vapor phase epitaxy 査読有り
Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Takeuchi Tetsuya, Wetzel Christian, Amano Hiroshi, Akasaki Isamu
Appl. Phys. Lett. 73 巻 ( 0 ) 頁: 830-831 1998年
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Photoluminescence of GaN: Effect of electron irradiation 査読有り
Buyanova I A, Wagner Mt, Chen W M, Monemar B, Lindstrom J L, Amano H, Akasaki I
Appl. Phys. Lett. 73 巻 ( 0 ) 頁: 2968-2970 1998年
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Determination of piezoelectric fields in strained (Ga,In)N quantum wells using the quantum-confined Stark effect 査読有り
Takeuchi Tetsuya, Wetzel Christian, Yamaguchi Shigeo, Sakai Hiromitsu, Amano Hiroshi, Akasaki Isamu, Kaneko Yawara, Nakagawa Shigeru, Yamaoka Yoshifumi, Yamada Norihide
Appl. Phys. Lett. 73 巻 ( 0 ) 頁: 1691-1693 1998年
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Pit formation in GaInN quantum wells 査読有り
Chen Y, Takeuchi T, Amano H, Akasaki I, Yamada N, Kaneko Y, Wang S Y
Appl. Phys. Lett. 72 巻 ( 0 ) 頁: 710-712 1998年
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Similarity between the 088-eV photoluminescence in GaN and the electron-capture emission of the OP donor in GaP 査読有り
Chen W M, Buyanova I A, Wagner Mt, Monemar B, Lindstrom J L, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics 58 巻 ( 0 ) 頁: R13351-R13354 1998年
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Influence of potential fluctuations on electrical transport and optical properties in modulation-doped GaN/Al028Ga072N heterostructures 査読有り
Buyanov A V, Bergman J P, Sandberg J A, Sernelius B E, Holtz P O, Monemar B, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics 58 巻 ( 0 ) 頁: 1442-1450 1998年
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Structural properties of Al1-xInxN ternary alloys on GaN grown by metalorganic vapor phase epitaxy 査読有り
Kariya Michihiko, Nitta Shugo, Yamaguchi Shigeo, Kato Hisaki, Takeuchi Tetsuya, Wetzel Christian, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters 37 巻 ( 0 ) 頁: L697-L699 1998年
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GaN based laser diode with focused ion beam etched mirrors 査読有り
Katoh Hisaki, Takeuchi Tetsuya, Anbe Chitoshi, Mizumoto Ryuichi, Yamaguchi Shigeo, Wetzel Christian, Amano Hiroshi, Akasaki Isamu, Kaneko Yawara, Yamada Norihide
Jpn. J. Appl. Phys. Part : Letters 37 巻 ( 0 ) 頁: L444-L446 1998年