論文 - 天野 浩
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Low-dislocation-density AlxGa1-xN single crystals grown on grooved substrates 査読有り
Sano Shigekazu, Detchprohm Theeradetch, Yano Masahiro, Nakamura Ryo, Mochizuki Shingo, Amano Hiroshi, Akasaki Isamu
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology 93 巻 ( 0 ) 頁: 197-201 2002年
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In-plane GaN/AlGaN heterostructure fabricated by selective mass transport planar technology 査読有り
Nitta Shugo, Yukawa Yohei, Watanabe Yasuhiro, Kosaki Masayoshi, Iwaya Motoaki, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology 93 巻 ( 0 ) 頁: 139-142 2002年
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Optical characterization of III-nitrides 査読有り
Monemar B, Paskov P P, Paskova T, Bergman J P, Pozina G, Chen W M, Hai P N, Buyanova I A, Amano H, Akasaki I
Materials Science & Engineering B: Solid-State Materials for Advanced Technology 93 巻 ( 0 ) 頁: 112-122 2002年
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Simultaneous observation of luminescence and dissociation processes of Mg-H complex for Mg-doped GaN 査読有り
Koide Yasuo, Walker D E Jr, White B D, Brillson L J, Murakami Masanori, Kamiyama S, Amano H, Akasaki I
J. Apl. Phys. 92 巻 ( 0 ) 頁: 3657-3661 2002年
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Atomic arrangement at the AlN/ZrB2 interface 査読有り
Liu R, Bell A, Ponce F A, Kamiyama S, Amano H, Akasaki I
Appl. Phys. Lett. 81 巻 ( 0 ) 頁: 3182-3184 2002年
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Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy 査読有り
Yamaguchi Shigeo, Iwamura Yasuo, Watanabe Yasuhiro, Kosaki Masayoshi, Yukawa Yohei, Nitta Shugo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Appl. Phys. Lett. 80 巻 ( 0 ) 頁: 802-804 2002年
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Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaN/sapphire substrates 査読有り
Riemann T, Christen J, Kaschner A, Laades A, Hoffmann A, Thomsen C, Iwaya M, Kamiyama S, Amano H, Akasaki I
Appl. Phys. Lett. 80 巻 ( 0 ) 頁: 3093-3095 2002年
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Effect of n-type modulation doping on the photoluminescence of GaN/Al0 査読有り
Haratizadeh H, Paskov P P, Pozina G, Holtz P O, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I
Appl. Phys. Lett. 80 巻 ( 0 ) 頁: 1373-1375 2002年
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Optical absorption in polarized Ga1-xInxN/GaN quantum wells 査読有り
Wetzel Christian, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers 41 巻 ( 0 ) 頁: 11-14 2002年
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Optical transitions in piezoelectrically polarized GaInN/GaN quantum wells 査読有り
Wetzel C, Nelson J, Kamiyama S, Amano H, Akasaki I
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 20 巻 ( 0 ) 頁: 216-218 2002年
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Critical issues in AlxGa1-xN growth 査読有り
Amano Hiroshi, Akasaki Isamu
Optical Materials Amsterdam Netherlands 19 巻 ( 0 ) 頁: 219-222 2002年
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Novel aspects of the growth of nitrides by MOVPE 査読有り
Amano H, Akasaki I
Journal of Physics: Condensed Matter 13 巻 ( 0 ) 頁: 6935-6944 2001年
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Photoluminescence of InGaN/GaN multiple quantum wells grown by mass transport 査読有り
Pozina G, Bergman J P, Monemar B, Iwaya M, Nitta S, Amano H, Akasaki I
J. Crystal Growth 230 巻 ( 0 ) 頁: 473-476 2001年
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Near K-edge absorption spectra of III-V nitrides 査読有り
Fukui K, Hirai R, Yamamoto A, Hirayama H, Aoyagi Y, Yamaguchi S, Amano H, Akasaki I, Tanaka S
Physica Status Solidi B: Basic Research 228 巻 ( 0 ) 頁: 461-465 2001年
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Optical characterization of InGaN/GaN MQW structures without in phase separation 査読有り
Monemar B, Paskov P P, Pozina G, Paskova T, Bergman J P, Iwaya M, Nitta S, Amano H, Akasaki I
Physica Status Solidi B: Basic Research 228 巻 ( 0 ) 頁: 157-160 2001年
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Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure 査読有り
Kamiyama S, Iwaya M, Hayashi N, Takeuchi T, Amano H, Akasaki I, Watanabe S, Kaneko Y, Yamada N
J. Crystal Growth 223 巻 ( 0 ) 頁: 83-91 2001年
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Crystal growth of high-quality AlInN/GaN superlattices and of crack-free AlN on GaN: their possibility of high electron mobility transistor 査読有り
Yamaguchi S, Kosaki M, Watanabe Y, Mochizuki S, Nakamura T, Yukawa Y, Nitta S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 188 巻 ( 0 ) 頁: 895-898 2001年
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Growth mechanism and characterization of low-dislocation-density AlGaN single crystals grown on periodically grooved substrates 査読有り
Detchprohm T, Sano S, Mochizuki S, Kamiyama S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 188 巻 ( 0 ) 頁: 799-802 2001年
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Demonstration of flame detection in room light background by solar-blind AlGaN PIN photodiode 査読有り
Hirano A, Pernot C, Iwaya M, Detchprohm T, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 188 巻 ( 0 ) 頁: 293-296 2001年
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High-efficiency GaN/AlxGa1-xN multi-quantum-well light emitter grown on low-dislocation density AlxGa1-xN 査読有り
Iwaya M, Terao S, Sano T, Takanami S, Ukai T, Nakamura R, Kamiyama S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 188 巻 ( 0 ) 頁: 117-120 2001年