論文 - 天野 浩
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Absorption spectroscopy and band structure in polarized GaN/AlxGa1-xN quantum wells 査読有り
Wetzel C, Kasumi M, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 183 巻 ( 0 ) 頁: 51-60 2001年
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Control of strain in GaN by a combination of H2 and N2 carrier gases 査読有り
Yamaguchi Shigeo, Kariya Michihiko, Kosaki Masayoshi, Yukawa Yohei, Nitta Shugo, Amano Hiroshi, Akasaki Isamu
J. Apl. Phys. 89 巻 ( 0 ) 頁: 7820-7824 2001年
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Time-resolved optical properties of GaN grown by metalorganic vapor phase epitaxy with indium surfactant 査読有り
Pozina G, Bergman J P, Monemar B, Yamaguchi S, Amano H, Akasaki I
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology 82 巻 ( 0 ) 頁: 137-139 2001年
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Metalorganic vapor phase epitaxy growth of crack-free AlN on GaN and its application to high-mobility AlN/GaN superlattices 査読有り
Yamaguchi Shigeo, Kosaki Masayoshi, Watanabe Yasuyukihiro, Yukawa Yohei, Nitta Shugo, Amano Hiroshi, Akasaki Isamu
Appl. Phys. Lett. 79 巻 ( 0 ) 頁: 3062-3064 2001年
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Control of strain in GaN using an In doping-induced hardening effect 査読有り
Yamaguchi Shigeo, Kariya Michihiko, Kashima Takayuki, Nitta Shugo, Kosaki Masayoshi, Yukawa Yohei, Amano Hiroshi, Akasaki Isamu
Physical Review B: Condensed Matter and Materials Physics 64 巻 ( 0 ) 頁: 035318/1-035318/5 2001年
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Photoresponse and defect levels of AlGaN/GaN heterobipolar phototransistor grown on low-temperature AlN interlayer 査読有り
Mouillet Robert, Hirano Akira, Iwaya Motoaki, Detchprohm Theeradetch, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters 40 巻 ( 0 ) 頁: L498-L501 2001年
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Metalorganic vapor phase epitaxial growth of high-quality (Al,In)N/(Al,Ga)N multiple layers on GaN 査読有り
Kosaki Masayoshi, Mochizuki Shingo, Nakamura Tetsuya, Yukawa Yohei, Nitta Shugo, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters 40 巻 ( 0 ) 頁: L420-L422 2001年
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Fracture of AlxGa1-xN/GaN heterostructure Compositional and impurity dependence 査読有り
Terao Shinji, Iwaya Motoaki, Nakamura Ryo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters 40 巻 ( 0 ) 頁: L195-L197 2001年
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Heteroepitaxial lateral overgrowth of GaN on periodically grooved substrates: a new approach for growing low-dislocation-density GaN single crystals 査読有り
Detchprohm Theeradetch, Yano Masahiro, Sano Shigekazu, Nakamura Ryo, Mochiduki Shingo, Nakamura Tetsuya, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters 40 巻 ( 0 ) 頁: L16-L19 2001年
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Zirconium diboride (0001) as an electrically conductive lattice-matched substrate for gallium nitride 査読有り
Kinoshita Hiroyuki, Otani Shigeki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Suda Jun, Matsunami Kiroyuki
Jpn. J. Appl. Phys. Part : Letters 40 巻 ( 0 ) 頁: L1280-L1282 2001年
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Analysis of lateral-mode behavior in broad-area InGaN quantum-well lasers 査読有り
Chow W W, Amano H
IEEE Journal of Quantum Electronics 37 巻 ( 0 ) 頁: 265-273 2001年
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DX-like behavior of oxygen in GaN 査読有り
Wetzel C, Amano H, Akasaki I, Ager J W, Grzegory I, Meyer B K
Physica B: Condensed Matter AmsterdamNetherlands 302&303 巻 ( 0 ) 頁: 23-38 2001年
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Luminescence of InGaN/GaN multiple quantum wells grown by mass-transport 査読有り
Pozina G, Bergman J P, Monemar B, Iwaya M, Nitta S, Amano H, Akasaki I
Materials Science Forum 353-356 巻 ( 0 ) 頁: 791-794 2001年
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Compensation mechanism in MOCVD and MBE grown GaN:Mg 査読有り
Alves H, Bohm M, Hofstaetter A, Amano H, Einfeldt S, Hommel D, Hofmann D M, Meyer B K
Physica B: Condensed Matter AmsterdamNetherlands 308-310 巻 ( 0 ) 頁: 38-41 2001年
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Mass transport of GaN and reduction of threading dislocations 査読有り
Nitta S, Kashima T, Nakamura R, Iwaya M, Amano H, Akasaki I
Surface Review and Letters 7 巻 ( 0 ) 頁: 561-564 2000年
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Electrical conductivity of low-temperature-deposited Al01Ga09N interlayer 査読有り
Hayashi Nobuaki, Kamiyama Satoshi, Takeuchi Tetsuya, Iwaya Motoaki, Amano Hiroshi, Akasaki Isamu, Watanabe Satoshi, Kaneko Yawara, Yamada Norihide
Jpn. J. Appl. Phys. 39 巻 ( 0 ) 頁: 6493-6495 2000年
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Radiative recombination in (In,Ga)N/GaN multiple quantum wells 査読有り
Bergman J P, Monemar B, Pozina G, Sernelius B E, Holtz P O, Amano H, Akasaki I
Materials Science Forum 338-342 巻 ( 0 ) 頁: 1571-1574 2000年
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Characterization of initial growth stage of GaInN multi-layered structure by X-ray CTR scattering method 査読有り
Tabuchi M, Hirayama K, Takeda Y, Takeuchi T, Amano H, Akasaki I
Applied Surface Science 159-160 巻 ( 0 ) 頁: 432-440 2000年
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Mass transport and the reduction of threading dislocation in GaN 査読有り
Nitta S, Kariya M, Kashima T, Yamaguchi S, Amano H, Akasaki I
Applied Surface Science 159-160 巻 ( 0 ) 頁: 421-426 2000年
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Strain relief by In-doping and its effect on the surface and on the interface structures in (Al)GaN on sapphire grown by metalorganic vapor-phase epitaxy 査読有り
Yamaguchi S, Kariya M, Nitta S, Amano H, Akasaki I
Applied Surface Science 159-160 巻 ( 0 ) 頁: 414-420 2000年