研究者詳細 - 天野　浩

論文 - 天野　浩

分割表示 827 件中 221 - 240 件目／全件表示 >>

Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE

Nagamatsu Kentaro, Ando Yuto, Kono Tsukasa, Cheong Heajeong, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH 512 巻頁： 78-83 2019年4月

Nonpolar m-plane AlxGa1-xN layers grown on m-plane sapphire by MOVPE

Duc V Dinh, Amano Hiroshi, Pristovsek Markus

JOURNAL OF CRYSTAL GROWTH 512 巻頁： 100-104 2019年4月

The emergence and prospects of deep-ultraviolet light-emitting diode technologies

Kneissl Michael, Seong Tae-Yeon, Han Jung, Amano Hiroshi

NATURE PHOTONICS 13 巻 ( 4 ) 頁： 233-244 2019年4月

GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates

Sandupatla A., Arulkumaran S., Ng G. I., Ranjan K., Deki M., Nitta S., Honda Y., Amano H.

AIP ADVANCES 9 巻 ( 4 ) 頁： 045007 2019年4月

Transfer-free fabrication of a graphene transparent electrode on a GaN-based light-emitting diode using the direct precipitation method

Yamada, J; Usami, S; Ueda, Y; Honda, Y; Amano, H; Maruyama, T; Naritsuka, S

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( 4 ) 頁： 040904 2019年4月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

In order to advance the mass production of graphene devices, it is beneficial to avoid the difficulty graphene transfer process. Direct precipitation of graphene using a tungsten capping layer is convenient for this purpose, and is quite simple and compatible with conventional semiconductor fabrication processes. In this study, multilayer graphene was directly precipitated on a wafer of GaN-based blue LEDs to form a transparent electrode. The fabricated LED exhibited superior I-V characteristics and emitted blue luminescence around the probe of the electrode.

DOI： 10.7567/1347-4065/aafe70

Web of Science

Scopus

Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy

Liu Zhibin, Nitta Shugo, Usami Shigeyoshi, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH 509 巻頁： 50-53 2019年3月

GaN-on-Si resonant-cavity light-emitting diode incorporating top and bottom dielectric distributed Bragg reflectors

Cai Wei, Yuan Jialei, Ni Shuyu, Shi Zheng, Zhou Weidong, Liu Yuhuai, Wang Yongjin, Amano Hiroshi

APPLIED PHYSICS EXPRESS 12 巻 ( 3 ) 頁： 032004 2019年3月

Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al2O3 Gate Dielectrics

Yoshino Michitaka, Ando Yuto, Deki Manato, Toyabe Toru, Kuriyama Kazuo, Honda Yoshio, Nishimura Tomoaki, Amano Hiroshi, Kachi Tetsu, Nakamura Tohru

MATERIALS 12 巻 ( 5 ) 頁： 689 2019年3月

Effects of Drift Layer Thicknesses in Reverse Conduction Mechanism on Vertical GaN-on-GaN SBDs grown by MOCVD

Abhinay S., Arulkumaran S., Ng G.I., Ranjan K., Deki M., Nitta S., Honda Y., Amano H.

2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 頁： 106 - 108 2019年3月

記述言語：日本語掲載種別：研究論文（学術雑誌）出版者・発行元：2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Effect of drift layer thicknesses (DLT) (2, 15 and 30 μm) in reverse current conduction mechanisms of vertical GaN-on-GaN Schottky Barrier Diodes grown MOCVD has been investigated for the first time. The conduction mechanism is changing from thermionic field emission (TFE) to thermionic emission (TE) when the DLT of GaN increases. The SBDs with DLT of 2 μm and 30 μm exhibit TFE through Poole-Frenkel emission and TE, respectively. However, the SBDs with DLT of 15 μm exhibit both TFE and TE. Activation energy (Ea) of traps was also calculated to be 0.69 eV for 2 μm, 0.38 for 15 μm and 0.4 eV for 30 μm respectively. Ea of 0.69 eV and 0.4 eV could be associated with screw threading dislocations and the presence of Mg in the grown drift layer, respectively.

DOI： 10.1109/EDTM.2019.8731215

Scopus

GaN薄膜における貫通転位およびナノパイプm壁面の第一原理計算に基づく電子状態解析

中野崇志, 長川健太, 洗平昌晃, 白石賢二, 押山淳, 宇佐美茂佳, 草場彰, 寒川義裕, 田中敦之, 本田善央, 天野浩

応用物理学会学術講演会講演予稿集 2019.1 巻 ( 0 ) 頁： 3122 - 3122 2019年2月

Morphological study of InGaN on GaN substrate by supersaturation

Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH 508 巻頁： 58-65 2019年2月

How to obtain metal-polar untwinned high-quality (10-13) GaN on m-plane sapphire

Hu, N; Dinh, DV; Pristovsek, M; Honda, Y; Amano, H

JOURNAL OF CRYSTAL GROWTH 507 巻頁： 205 - 208 2019年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Journal of Crystal Growth

Directional sputtering of Al and AlN on (1 0 −1 0) sapphire was used to obtain metal-polar (1 0 −1 3) templates. After overgrowth with AlN and GaN using metal-organic vapor phase epitaxy, we obtained untwinned (1 0 −1 3) GaN layers. Full width at half maximum of the X-ray rocking curve of symmetric (1 0 −1 3) GaN is less than 550 arcsec along both [3 0 −3 −2]GaN and [1 −2 1 0]GaN directions. Ga-polarity of the layers was confirmed by high-resolution scanning transmission electron microscopy. Careful optimization of time and temperature of the initial Al sputtered layer was a key parameter to achieve high quality GaN templates.

DOI： 10.1016/j.jcrysgro.2018.11.013

Web of Science

Scopus

高感度電子線ホログラフィーによるGaN系半導体のドーパント濃度分布の観察

仲野靖孝, 松本実子, 穴田智史, 山本和生, 石川由加里, 平山司, 安藤悠人, 小倉昌也, 田中敦之, 本田善央, 天野浩

まてりあ 58 巻 ( 2 ) 頁： 103 - 103 2019年2月

Pole figure analysis from electron backscatter diffraction-an effective method of evaluating fiber-textured silicon thin films as seed layers for epitaxy

Hainey, M; Robin, Y; Amano, H; Usami, N

APPLIED PHYSICS EXPRESS 12 巻 ( 2 ) 2019年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Applied Physics Express

Because of their >95% (111) surface orientation and very large (10-300 μm) grain sizes, sub-50 nm Group IV thin films fabricated by metal-induced crystallization are promising seed layers for epitaxy. However, methods for evaluating Group IV film quality for subsequent homo-and heteroepitaxial growth have not been widely reported. Here, we show how pole figures obtained by electron backscatter diffraction allow for texture analysis and measurement of grain misorientation. Correlations with Group IV thin film processing parameters such as annealing temperature and film quality in heteroepitaxially grown GaN films are developed.

DOI： 10.7567/1882-0786/aafb26

Web of Science

Scopus

Vertical GaN p-n diode with deeply etched mesa and the capability of avalanche breakdown

Fukushima, H; Usami, S; Ogura, M; Ando, Y; Tanaka, A; Deki, M; Kushimoto, M; Nitta, S; Honda, Y; Amano, H

APPLIED PHYSICS EXPRESS 12 巻 ( 2 ) 頁： 026502 2019年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Applied Physics Express

A simple structure with high breakdown voltage and a low leakage current of a vertical GaN p-n diode on a GaN free-standing substrate is demonstrated. We describe a vertical p-n diode with a simple edge termination that has a drift layer etched deeply and vertically. A device simulation revealed that the electric field was more relaxed at the device edge and applied uniformly in the entire device with increasing etching depth. We fabricated the simulated structure and succeeded in reducing the leakage current and improving the breakdown voltage. With this structure, a stable avalanche breakdown can be observed.

DOI： 10.7567/1882-0786/aafdb9

Web of Science

Scopus

Compositional control of homogeneous InGaN nanowires with the In content up to 90.

Zeghouane M, Avit G, André Y, Bougerol C, Robin Y, Ferret P, Castelluci D, Gil E, Dubrovskii VG, Amano H, Trassoudaine A

Nanotechnology 30 巻 ( 4 ) 頁： 044001 2019年1月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Nanotechnology

Homogenous InGaN nanowires with a controlled indium composition up to 90% are grown on GaN/c-Al2O3 templates by catalyst-free hydride vapor phase epitaxy using InCl3 and GaCl as group III element precursors. The influence of the partial pressures on the growth rate and composition of InGaN nanowires is investigated. It is shown how the InN mole fraction in nanowires can be finely tuned by changing the vapor phase composition. Thermodynamic calculations are presented that take into account different interconnected reactions in the vapor phase and show a good agreement with the compositional data. Energy dispersive x-ray spectroscopy profiles performed on single nanowires show a homogenous indium composition along the entire nanowire length. X-ray diffraction measurements performed on nanowires arrays confirm these data. High-resolution transmission electron microscopy analysis shows the wurtzite crystal structure with a reduced defect density for InGaN nanowires with the highest indium content.

DOI： 10.1088/1361-6528/aaec39

Web of Science

Scopus

PubMed

Localization and transient emission properties in InGaN/GaN quantum wells of different polarities within core- shell nanorods

Robin, Y; Evropeitsev, EA; Shubina, TV; Kirilenko, DA; Davydov, VY; Smirnov, AN; Toropov, AA; Eliseyev, IA; Bae, SY; Kushimoto, M; Nitta, S; Ivanov, SV; Amano, H

NANOSCALE 11 巻 ( 1 ) 頁： 193 - 199 2019年1月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Nanoscale

Transient photoluminescence (PL) characteristics and localization phenomena in InGaN/GaN core-shell nanorods (NRs) were investigated from 6 K up to 285 K. The NRs exhibit three well-defined PL bands in the near-UV, blue, and green range ascribed to the emission of quantum well (QW) areas situated at the (1.00) sidewalls, (10.1) top facets, and (00.1) tip, respectively. At low temperature, time-resolved PL shows a fast decay time of about 0.5 ns for the semi- and non-polar QWs, while the polar QWs exhibit at least a twice-longer time. Rapid delocalization of carriers above 50 K indicates shallow potential fluctuations in the QWs. At room temperature, the characteristic fast PL decay time of the three QW bands stabilizes around 300 ps. The slow decaying PL components have different characteristic decay times that are explained by additional localization at basal stacking faults (BSFs), taking into account the quantum confined Stark effect. In addition, narrow excitonic luminescence lines are observed in the BSF-enriched polar QWs, providing direct evidence of the impact of the BSF/QW crossings on the optical properties of the NRs. A PL rise time of about 100 ps does not show any deviation between bands. These findings are suggestive of similar transport mechanisms in temperature equilibrium without inter-facet transport between different QWs. We believe that predictable transient characteristics can play a key role in creating uniform NR ensembles for device applications.

DOI： 10.1039/c8nr05863f

Web of Science

Scopus

PubMed

Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an AlN template with macrosteps

Kojima K., Nagasawa Y., Hirano A., Ippommatsu M., Honda Y., Amano H., Akasaki I., Chichibu S.F.

Applied Physics Letters 114 巻 ( 1 ) 頁： 011102 2019年1月

記述言語：日本語掲載種別：研究論文（学術雑誌）出版者・発行元：Applied Physics Letters

The microscopic structural and optical characteristics of AlGaN-based light-emitting diodes grown on AlN templates with macrosteps were evaluated. Cross-sectional transmission electron microscopy in the high-angle annular dark field scanning mode and microscopic energy dispersive X-ray spectroscopy reveal that the AlGaN cladding layer under the AlGaN quantum wells (QWs) has microscopic compositional modulations originating from the macrosteps at the AlN template surface. The Ga-rich oblique zones in the cladding layer likely behave as current micropaths. These micropaths are connected to the carrier localization structure, which is formed by the modulation of both the well widths and the compositions of the QWs. In-plane spatially-resolved cathodoluminescence (CL) spectroscopy indicated significant inhomogeneity of the CL characteristics: the brighter emission with a lower peak photon energy confirms the existence of the carrier localization structure in the QWs. Carrier localization in the QWs along with the current micropaths in the AlGaN cladding layer appears to increase the external quantum efficiency of AlGaN LEDs.

DOI： 10.1063/1.5063735

Web of Science

Scopus

286 nm monolithic multicomponent system

Yuan, JL; Jiang, Y; Shi, Z; Gao, XM; Wang, YJ; Sun, XJ; Li, DB; Liu, YH; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( 1 ) 頁： 010909 2019年1月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

We present a 286 nm monolithic multicomponent system in which two identical multiple quantum well (MQW) diodes merge with a waveguide together on a single chip. The monolithic multicomponent system allows all existing standard fabrication processes and establishes an optical link between two MQW-diodes because of the simultaneous emission-detection phenomenon. One MQW-diode transcribes electronic information into an optical signal to be coupled into a waveguide. The guided light then propagates along the waveguide to the other MQW-diode that converts the optical signal into an electronic one. A spatial light transmission at 50 Mbps is demonstrated using non-return-to-zero on-off keying modulation.

DOI： 10.7567/1347-4065/aaf3aa

Web of Science

Scopus

Electronic structure analysis of core structures of threading dislocations in GaN

Nakano, T; Chokawa, K; Araidai, M; Shiraishi, K; Oshiyama, A; Kusaba, A; Kangawa, Y; Tanaka, A; Honda, Y; Amano, H

2019 COMPOUND SEMICONDUCTOR WEEK (CSW) 頁： . 2019年

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：2019 Compound Semiconductor Week, CSW 2019 - Proceedings

It is known that threading dislocations degrade the performance of GaN-based electronic devices. Electronic structure of threading dislocations in GaN is not fully understood. Accordingly, we examine the electronic structures of threading dislocations in GaN using first principles calculations based on density functional theory (DFT) and to clarify the origin of the leakage current. We have comprehensively studied the relation between threading core structures and electronic property in GaN thin films. Our calculation models of threading dislocations are the edge dislocations with Burgers vectors of 1/3 [11-20] and the screw dislocations with Burgers vectors of [0001]. We examined various core types of the threading dislocations. We found that both edge dislocations and screw dislocations do not cause the leakage currents in n-type GaN based devices because no defect level appears near the conduction band bottom.

DOI： 10.1109/iciprm.2019.8819270

Web of Science

Scopus

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