論文 - 天野　浩

Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction 査読有り

Kazuki Mori, Kunihiro Takeda, Toshiki Kusafuka, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano

Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction   55 巻 ( 5S ) 頁： 05FL03/1-5   2016年5月

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記述言語：英語   掲載種別：研究論文（学術雑誌）  

Observation of relaxation time of surface charge limit for InGaN photocathodes with negative electron affinity 査読有り

Daiki Sato, Tomohiro Nishitani, Yoshio Honda and Hiroshi Amano

Japanese Journal of Applied Physics   55 巻 ( 5S ) 頁： 05FH05/1-4   2016年5月

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記述言語：英語   掲載種別：研究論文（学術雑誌）  

Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode 査読有り

Byung Oh Jung, Si-Young Bae, Seunga Lee, Sang Yun Kim, Jeong Yong Lee, Yoshio Honda and Hiroshi Amano

Nanoscale Research Letters   11 巻   2016年4月

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記述言語：英語   掲載種別：研究論文（学術雑誌）  

We report the selective-area growth of a gallium nitride (GaN)-nanorod-based InGaN/GaN multiple-quantum-well (MQW) core-shell structure embedded in a three-dimensional (3D) light-emitting diode (LED) grown by metalorganic chemical vapor deposition (MOCVD) and its optical analysis. High-resolution transmission electron microscopy (HR-TEM) observation revealed the high quality of the GaN nanorods and the position dependence of the structural properties of the InGaN/GaN MQWs on multiple facets. The excitation and temperature dependences of photoluminescence (PL) revealed the m-plane emission behaviors of the InGaN/GaN core-shell nanorods. The electroluminescence (EL) of the InGaN/GaN core-shell-nanorod-embedded 3D LED changed color from green to blue with increasing injection current. This phenomenon was mainly due to the energy gradient and deep localization of the indium in the selectively grown InGaN/GaN core-shell MQWs on the 3D architecture.

DOI： 10.1186/s11671-016-1441-6

Preflow trimethylaluminum treatment effect on GaN growth on SiC with an ultrathin interlayer 査読有り

Zheng Sun, Kentaro Nagamatsu, Marc Olsson, Peifeng Song, Manato Deki, Shugo Nitta, Yoshio Honda and Hiroshi Amano

Japanese Journal of Applied Physics,   55 巻 ( 5S ) 頁： 05FB06/1-5   2016年4月

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記述言語：英語   掲載種別：研究論文（学術雑誌）  

Growth of semipolar (1-101) high-indium-content InGaN quantum well using InGaN tilting layer on Si(001) 査読有り

Maki Kushimoto, Yoshio Honda and Hiroshi Amano

Japanese Journal of Applied Physics   55 巻 ( 5S ) 頁： 05FA10/1-4   2016年4月

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記述言語：英語   掲載種別：研究論文（学術雑誌）  

Evaluation of excess In during metal organic vapor-phase epitaxy growth of InGaN by monitoring via in situ laser scattering 査読有り

Tetsuya Yamamoto, Akira Tamura, Shigeyoshi Usami, Tadashi Mitsunari, Kentaro Nagamatsu, Shugo Nitta, Yoshio Honda and Hiroshi Amano

Japanese Journal of Applied Physics   55 巻 ( 5S ) 頁： 05FD03/1-4   2016年4月

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記述言語：英語   掲載種別：研究論文（学術雑誌）  

Using an in situ laser absorption and scattering method, the surface roughness and incorporation of In in InGaN layers grown by metal organic vapor-phase epitaxy (MOVPE) were monitored.

Development of GaN-based blue LEDs and metalorganic vapor phase epitaxy of GaN and related materials 招待有り

Hiroshi Amano

Progress in Crystal Growth and Characterization of Materials   62 巻   頁： 126–135   2016年4月

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担当区分：筆頭著者   記述言語：英語  

DOI： https://doi.org/10.1016/j.pcrysgrow.2016.04.006

Structural and optical study of core–shell InGaN layers of nanorod arrays with multiple stacks of InGaN/GaN superlattices for absorption of longer solar spectrum 査読有り

  55 巻 ( 5S ) 頁： 05FG03/1-8   2016年4月

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記述言語：英語   掲載種別：研究論文（学術雑誌）  

We report on the material and optical properties of core–shell InGaN layers grown on GaN nanorod arrays. The core–shell InGaN layers were well grown on polarization-reduced surfaces such as semipolar pyramids and nonpolar sidewalls. In addition, to compensate the biaxial strain between GaN and InGaN layers, we grew interlayers underneath a thick InGaN layer. Here, the interlayers were composed of multiple superlattice structures. We could observe that the indium composition of core–shell InGaN structures increased with the number of interlayers. This indicates that the absorption energy band of InGaN alloys can be better matched to the spectral irradiance of the solar spectrum in nature. We also implemented a simulation of Ga-polar and nonpolar InGaN-based solar cells based on the indium composition obtained from the experiments. The result showed that nonpolar InGaN solar cells had a much higher efficiency than Ga-polar InGaN solar cells with the same thickness of the absorption layer.

Selective-area growth of GaN microrods on strain-induced templates by hydride vapor phase epitaxy 査読有り

Kaddour Lekhal, Si-Young Bae, Ho-Jun Lee, Tadashi Mitsunari, Akira Tamura, Manato Deki, Yoshio Honda and Hiroshi Amano

Japanese Journal of Applied Physics   55 巻   頁： 05FF03/1-5   2016年3月

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記述言語：英語   掲載種別：研究論文（学術雑誌）  

Theoretical approach to surface reconstruction of InN(0001) during raised-pressure metalorganic vapor-phase epitaxy 査読有り

Akira Kusaba, Yoshihiro Kangawa, Yoshio Honda, Hiroshi Amano and Koichi Kakimoto

Japanese Journal of Applied Physics   55 巻 ( 5S ) 頁： 05FM01/1-4   2016年2月

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記述言語：英語   掲載種別：研究論文（学術雑誌）  

Study of enhanced photovoltaic behavior in InGaN-based solar cells by using SiNx insertion layer: Influence of dislocations 査読有り

Seunga Lee, Yoshio Honda, Hiroshi Amano, Jongjin Jang and Okhyun Nam

Japanese Journal of Applied Physics Rapid Communications   55 巻 ( 3 ) 頁： 030306/1-4   2016年2月

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記述言語：英語   掲載種別：研究論文（学術雑誌）  

Using a SiN insertion layer to reduce dislocations, enhanced photovoltaic properties could be obtained in pin InGaN GaN heterojunction solar cell. To investigate the influence of the dislocations on the photovoltaic behaviors, a sample grown without SiN insertion layer was identically prepared for comparison. From optical properties measurements, the reduction in the number of non-radiative centers and a stronger In localization effect was shown in the sample with SiN insertion layer. However, the quantum confined stark effect was almost negligible in both the samples.

Effect of piezoelectric field on carrier dynamics in InGaN-based solar cells 査読有り

Lee, Seunga; Honda, Yoshio; Amano, Hiroshi

JOURNAL OF PHYSICS D-APPLIED PHYSICS   49 巻 ( 2 ) 頁： 025103   2016年1月

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記述言語：英語   掲載種別：研究論文（学術雑誌）  

To understand the effect of piezoelectric fields on carrier dynamics, we numerically investigated a simple p-GaN/i-InxGa1-xN/n-GaN solar cell structure. A reliable simulation model was obtained by comparing the experimental and simulated results in advance.

Highly elongated vertical GaN nanorod arrays on Si substrates with an AlN seed layer by pulsed-mode metal-organic vapor deposition 査読有り

Si-Young Bae, Byung Oh Jung, Kaddour Lekhal, Sang Yun Kim, Jeong Yong Lee, Dong-Seon Lee, Manato Deki, Yoshio Honda and Hiroshi Amano

CrystEngComm   18 巻   頁： 1505-1514   2016年1月

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記述言語：英語   掲載種別：研究論文（学術雑誌）  

. Unlike the thick and high (or middle)-quality GaN templates normally used, nanorod growth was performed on an ultrathin and low-quality AlN/Si platform. Using kinetically controlled growth conditions and a patterning process, exceptionally long GaN nanorods were achieved with high geometric precision.

DOI： 10.1039/C5CE02056E

The interface analysis of GaN grown on 0° off 6H-SiC with an ultra-thin buffer layer 査読有り

Zheng Sun, Akio Ohta, Seiichi Miyazaki, Kentaro Nagamatsu, Hojun Lee, Marc Olsson, Zheng Ye, Manato Deki, Yoshio Honda, and Hiroshi Amano

Japanese Journal of Applied Physics   55 巻   頁： 010303/1-3   2016年1月

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記述言語：英語   掲載種別：研究論文（学術雑誌）  

Previously, we reported a growth method by MOVPE using a single two-dimensional growth step, resulting in 1.2-micron thick crack-free GaN directly grown on 6H-SiC substrate. The introduction of Al-treatment prior to the standard GaN growth step resulted in improved surface wetting of gallium on the SiC substrate.

Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation 招待有り 査読有り

Hiroshi Amano

Rev. Mod. Phys.   87 巻 ( 4 ) 頁： 1133-1138   2015年12月

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担当区分：筆頭著者   記述言語：英語   掲載種別：研究論文（学術雑誌）  

This is a personal history of one of the Japanese researchers engaged in developing a method for
growing GaN on a sapphire substrate, paving the way for the realization of smart television and
display systems using blue LEDs. The most important work was done in the mid to late 1980s. The
background to the author's work and the process by which the technology enabling the growth of
GaN and the realization of p-type GaN was established are reviewed.

Single-crystalline semipolar GaN on Si(001) using a directional sputtered AlN intermediate layer 査読有り

Tadashi Mitsunari, Ho Jun Lee, Yoshio Honda, Hiroshi Amano

Journal of Crystal Growth   431 巻   頁： 60-63   2015年12月

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記述言語：英語   掲載種別：研究論文（学術雑誌）  

We obtained single-crystalline semipolar (10View the MathML source1¯3)GaN on a nominal Si(001) substrate with sputtered AlN using the directional feature of sputtering.

DOI： 10.1016/j.jcrysgro.2015.08.027

Time-resolved photoluminescence properties of hybrids based on inorganic AlGaN/GaN quantum wells and colloidal ZnO nanocrystals 査読有り

M. Forsberg, C. Hemmingsson, H. Amano, G. Pozina

Superlattices and Microstructures   87 巻   頁： 38-41   2015年11月

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記述言語：英語   掲載種別：研究論文（学術雑誌）  

Dynamic properties are studied for the AlGaN/GaN quantum well (QW) structures with and without the coating of colloidal ZnO nanocrystals (NCs). The QW exciton recombination rate was reduced in such hybrids compared to the bare QW structure only in the sample with the thinnest cap layer of 3 nm. Assuming that one of the recombination mechanisms in this hybrid is non-radiative resonant energy transfer (NRET) between the QW and the energy acceptor material i.e. ZnO NCs, the maximum pumping efficiency was estimated to be 0.42 at 60 K. The NRET effect is, however, vanished after several months despite that the hybrid structures are composed of chemically stable components.

DOI： doi:10.1016/j.spmi.2015.07.017

Excitation density dependence of radiative and nonradiative recombination lifetimes in InGaN/GaN multiple quantum wells 査読有り

Hideaki Murotani, Yoichi Yamada, Yoshio Honda, and Hiroshi Amano

Physica Status Solidi b   252 巻 ( 5 ) 頁： 940-945   2015年5月

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記述言語：英語   掲載種別：研究論文（学術雑誌）  

The optical properties of InGaN/GaN multiple quantum wells (MQWs) have been studied by means of photoluminescence (PL) and time-resolved photoluminescence (TRPL) spectroscopy.


DOI： 10.1002/pssb.201451491

Polarization dilution in a Ga-polar UV-LED to reduce the influence of polarization charges 査読有り

Toshikiu Yasuda, Kento Hayashi, Syouta Katsuno, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki, and Hiroshi Amano

Physica Status Solidi a   212 巻 ( 5 ) 頁： 920-924   2015年5月

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記述言語：英語   掲載種別：研究論文（学術雑誌）  

We investigated the influence of polarization charges in nitride-based semiconductors.

DOI： 10.1002/pssa.201431730

Resonant Raman and FTIR spectra of carbon doped GaN 査読有り

S. Ito, H. Kobayashi, K. Arak,i, K. Suzuki, N. Sawaki, K. Yamashita, Y. HOnda, H. Amano

Journal of Crystal Grwoth   414 巻 ( 15 ) 頁： 56-60   2015年3月

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記述言語：英語   掲載種別：研究論文（学術雑誌）  

DOI： doi:10.1016/j.jcrysgro.2014.11.024