論文 - 天野 浩
-
Suppression of phase separation of AlGaN during lateral growth and fabrication of high-efficiency UV-LED on optimized AlGaN 査読有り
Iwaya Motoaki, Terao Shinji, Sano Tomoaki, Ukai Tsutomu, Nakamura Ryo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth 237-239 巻 ( 0 ) 頁: 951-955 2002年
-
Relaxation of misfit-induced stress in nitride-based heterostructures 査読有り
Terao Shinji, Iwaya Motoaki, Sano Tomoaki, Nakamura Tetsuya, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth 237-239 巻 ( 0 ) 頁: 947-950 2002年
-
Characterization of local structures around In atoms in Ga1-xInxN layers by fluorescence EXAFS measurements 査読有り
Tabuchi M, Katou D, Kyouzu H, Takeda Y, Yamaguchi S, Amano H, Akasaki I
J. Crystal Growth 237-239 巻 ( 0 ) 頁: 1139-1142 2002年
-
Atomic scale characterization of GaInN/GaN layers grown on sapphire substrates with low-temperature deposited AlN buffer layers 査読有り
Tabuchi M, Kyouzu H, Takeda Y, Yamaguchi S, Amano H, Akasaki I
J. Crystal Growth 237-239 巻 ( 0 ) 頁: 1133-1138 2002年
-
Electric fields in polarized GaInN/GaN heterostructures 査読有り
Wetzel C, Takeuchi T, Amano H, Akasaki I
Optoelectronic Properties of Semiconductors and Superlattices 14 巻 ( 0 ) 頁: 219-258 2002年
-
Reduction of threading dislocation density in AlxGa1-xN grown on periodically grooved substrates 査読有り
Mochizuki Shingo, Detchprohm Theeradetch, Sano Shigekazu, Nakamura Tetsuya, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth 237-239 巻 ( 0 ) 頁: 1065-1069 2002年
-
Low-dislocation-density GaN and AlxGa1-xN (x? 013) grown on grooved substrates 査読有り
Sano Shigekazu, Detchprohm Theeradetch, Mochizuki Shingo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth 235 巻 ( 0 ) 頁: 129-134 2002年
-
Migration of dislocations in strained GaN heteroepitaxial layers 査読有り
Sahonta S-L, Baines M Q, Cherns D, Amano H, Ponce F A
Physica Status Solidi B: Basic Research 234 巻 ( 0 ) 頁: 952-955 2002年
-
Mg incorporation in AlGaN layers grown on grooved sapphire substrates 査読有り
Cherns D, Baines M Q, Wang Y Q, Liu R, Ponce F A, Amano H, Akasaki I
Physica Status Solidi B: Basic Research 234 巻 ( 0 ) 頁: 850-854 2002年
-
Phonon-assisted photoluminescence in InGaN/GaN multiple quantum wells 査読有り
Paskov P P, Holtz P O, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi B: Basic Research 234 巻 ( 0 ) 頁: 755-758 2002年
-
Mass transport of AlxGa1-xN 査読有り
Nitta S, Yukawa Y, Watanabe Y, Kamiyama S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 194 巻 ( 0 ) 頁: 485-488 2002年
-
High-efficiency UV light-emitting diode 査読有り
Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 194 巻 ( 0 ) 頁: 393-398 2002年
-
Effect of In-doping on the properties of as-grown p-type GaN grown by metalorganic vapor phase epitaxy 査読有り
Yamaguchi S, Iwamura Y, Watanabe Y, Kosaki M, Yukawa Y, Nitta S, Kamiyama S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 192 巻 ( 0 ) 頁: 453-455 2002年
-
Annihilation of threading dislocations in GaN/AlGaN 査読有り
Kuwano N, Tsuruda T, Adachi Y, Terao S, Kamiyama S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 192 巻 ( 0 ) 頁: 366-370 2002年
-
UV light-emitting diode fabricated on hetero-ELO-grown Al022Ga078N with low dislocation density 査読有り
Kamiyama S, Iwaya M, Takanami S, Terao S, Miyazaki A, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 192 巻 ( 0 ) 頁: 296-300 2002年
-
Influence of depletion fields on photoluminescence of n-doped InGaN/GaN multiple quantum well structures 査読有り
Monemar B, Paskov P P, Pozina G, Bergman J P, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 192 巻 ( 0 ) 頁: 21-26 2002年
-
Photoluminescence of excitons in InxGa1-xN/InyGa1-yN multiple quantum wells 査読有り
Monemar B, Paskov P P, Bergman J P, Pozina G, Paskova T, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 190 巻 ( 0 ) 頁: 161-166 2002年
-
Optical study of AlGaN/GaN multiple quantum well structures grown on laterally overgrown GaN templates 査読有り
Pozina G, Bergman J P, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 190 巻 ( 0 ) 頁: 107-111 2002年
-
High-quality and high-mobility AlInN/GaN superlattices grown by metalorganic vapor phase epitaxy 査読有り
Yamaguchi S, Iwamura Y, Kosaki M, Watanabe Y, Mochizuki S, Nakamura T, Yukawa Y, Nitta S, Kamiyama S, Amano H, Akasaki I
Institute of Physics Conference Series 170 巻 ( 0 ) 頁: 813-817 2002年
-
Growth of high-quality GaN on metallic-ZrB2 by metalorganic vapor phase epitaxy 査読有り
Yukawa Y, Nakamura T, Kosaki M, Watanabe Y, Nitta S, Kamiyama S, Amano H, Akasaki I, Otani S, Kinoshita H
Institute of Physics Conference Series 170 巻 ( 0 ) 頁: 713-718 2002年