論文 - 天野 浩
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Reduction of etch pit density in organometallic vapor phase epitaxy-grown GaN on sapphire by insertion of a low-temperature-deposited buffer layer between high-temperature-grown GaN 査読有り
Iwaya Motoaki, Takeuchi Tetsuya, Yamaguchi Shigeo, Wetzel Christian, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters 37 巻 ( 0 ) 頁: L316-L318 1998年
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Investigation of the leakage current in GaN p-n junctions 査読有り
Pernot Cyril, Hirano Akira, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters 37 巻 ( 0 ) 頁: L1202-L1204 1998年
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Stress and defect control in GaN using low temperature interlayers 査読有り
Amano Hiroshi, Iwaya Motoaki, Kashima Takayuki, Katsuragawa Maki, Akasaki Isamu, Han Jung, Hearne Sean, Floro Jerry A, Chason Eric, Figiel Jeffrey
Jpn. J. Appl. Phys. Part : Letters 37 巻 ( 0 ) 頁: L1540-L1542 1998年
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Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters 査読有り
Akasaki Isamu, Amano Hiroshi
Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers 36 巻 ( 0 ) 頁: 5393-5408 1997年
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Electronic structure and temperature dependence of excitons in GaN 査読有り
Monemar B, Buyanova I A, Bergman J P, Amano H, Akasaki I
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology 43 巻 ( 0 ) 頁: 172-175 1997年
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Melt-back etching of GaN 査読有り
Kaneko Yawara, Yamada Norihide, Takeuchi Tetsuya, Yamaoka Yoshifumi, Amano Hiroshi, Akasaki Isamu
Solid-State Electronics 41 巻 ( 0 ) 頁: 295-298 1997年
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Recessed gate GaN MODFETs 査読有り
Burm Jinwook, Schaff William J, Martin Glenn H, Eastman Lester F, Amano Hiroshi, Akasaki Isamu
Solid-State Electronics 41 巻 ( 0 ) 頁: 247-250 1997年
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The excitonic bandgap of GaN: dependence on substrate 査読有り
Monemar B, Bergman J P, Buyanova I A, Amano H, Akasaki I, Detchprohm T, Hiramatsu K, Sawaki N T
Solid-State Electronics 41 巻 ( 0 ) 頁: 239-241 1997年
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Properties of Mg and Zn acceptors in MOVPE GaN as studied by optically detected magnetic resonance 査読有り
Kunzer M, Baur J, Kaufmann U, Schneider J, Amano H, Akasaki I
Solid-State Electronics 41 巻 ( 0 ) 頁: 189-193 1997年
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Optical characterization of GaN and related materials 査読有り
Monemar B, Bergman J P, Lundstroem T, Harris C I, Amano H, Akasaki I, Detchprohm T, Hiramatsu K, Sawaki N
Solid-State Electronics 41 巻 ( 0 ) 頁: 181-184 1997年
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Quantum-confined Stark effect due to piezoelectric fields in GaInN strained quantum wells 査読有り
Takeuchi Tetsuya, Sota Shigetoshi, Katsuragawa Maki, Komori Miho, Takeuchi Hideo, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys.Part : Letters 36 巻 ( 0 ) 頁: L382-L385 1997年
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Optical properties of strained AlGaN and GaInN on GaN 査読有り
Takeuchi Tetsuya, Takeuchi Hideo, Sota Shigetoshi, Sakai Hiromitsu, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys.Part : Letters 36 巻 ( 0 ) 頁: L177-L179 1997年
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Temperature dependence of excitonic photoluminescence and residual shallow donors in high-purity GaN/Al2O3 査読有り
Merz C, Kunzer M, Santic B, Kaufmann U, Akasaki I, Amano H
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology 43 巻 ( 0 ) 頁: 176-180 1997年
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Photoluminescence of exciton-polaritons in GaN 査読有り
Buyanova I A, Bergman J P, Monemar B, Amano H, Akasaki I
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology 50 巻 ( 0 ) 頁: 130-133 1997年
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Electron gas in modulation doped GaN/AlGaN structures 査読有り
Bergman J P, Buyanov A, Lundstrom T, Monemar B, Amano H, Akasaki I
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology 43 巻 ( 0 ) 頁: 207-210 1997年
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Quantum beat spectroscopy on excitons in GaN 査読有り
Zimmermann R, Hofmann M R, Euteneuer A, Mobius J, Weber D, Ruhle W W, Gobel E O, Meyer B K, Amano H, Akasaki I
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology- 50 巻 ( 0 ) 頁: 205-207 1997年
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Effects of buffer layers in heteroepitaxy of gallium nitride 査読有り
Hiramatsu K, Detchprohm T, Amano H, Akasaki I
Advances in the Understanding of Crystal Growth Mechanisms ( 0 ) 頁: 399-413 1997年
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Progress and prospect of group-III nitride semiconductors 査読有り
Akasaki Isamu, Amano Hiroshi
J. Crystal Growth 175/176 巻 ( 0 ) 頁: 29-36 1997年
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Photoluminescence and optical gain in highly excited GaN 査読有り
Eckey L, Holst J, Hoffmann A, Broser I, Amano H, Akasaki I, Detchprohm T, Hiramatsu K
Journal of Luminescence 72-74 巻 ( 0 ) 頁: 59-61 1997年
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Photoluminescence decay dynamics in an InGaN/GaN/AlGaN single quantum well 査読有り
Li Wei, Bergman Peder, Monemar Bo, Amano H, Akasaki I
J. Apl. Phys. 81 巻 ( 0 ) 頁: 1005-1007 1997年