論文 - 天野 浩
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Optical properties of tensile-strained wurtzite GaN epitaxial layers 査読有り
Chichibu S, Azuhata T, Sota T, Amano H, Akasaki I
Appl. Phys. Lett. 70 巻 ( 0 ) 頁: 2085-2087 1997年
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Transient four-wave-mixing spectroscopy on gallium nitride: Energy splittings of intrinsic excitonic resonances 査読有り
Zimmermann R, Euteneuer A, Mobius J, Weber D, Hofmann M R, Ruhle W W, Gobel E O, Meyer B K, Amano H, Akasaki I
Physical Review B: Condensed Matter 56 巻 ( 0 ) 頁: R12722-R12724 1997年
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N K-edge x-ray-absorption study of heteroepitaxial GaN films 査読有り
Katsikini M, Paloura E C, Fieber-Erdmann M, Kalomiros J, Moustakas T D, Amano H, Akasaki I
Physical Review B: Condensed Matter 56 巻 ( 0 ) 頁: 13380-13386 1997年
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Shortest wavelength semiconductor laser diode 査読有り
Akasaki I, Sota S, Sakai H, Tanaka T, Koike M, Amano H
Electronics Letters 32 巻 ( 0 ) 頁: 1105-1106 1996年
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Crystal growth of column-III nitride semiconductors and their electrical and optical properties 査読有り
Akasaki I, Amano H
J. Crystal Growth 163 巻 ( 0 ) 頁: 86-92 1996年
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Raman and photoluminescence imaging of the GaN/substrate interface 査読有り
Siegle H, Thurian P, Eckey L, Hoffmann A, Thomsen C, Meyer B K, Detchprohm T, Hiramatsu K, Amano H, Akasaki I
Institute of Physics Conference Series 149 巻 ( 0 ) 頁: 97-102 1996年
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Present and future of group III nitride semiconductors 査読有り
Akasaki Isamu, Amano Hiroshi
Institute of Physics Conference Series 145 巻 ( 0 ) 頁: 19-22 1996年
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Relaxation and recombination dynamics in GaN/Al2O3 epilayers 査読有り
Eckey L, Heitz R, Hoffmann A, Broser I, Meyer B K, Hiramatsu K, Detchprohm T, Amano H, Akasaki I
Institute of Physics Conference Series 142 巻 ( 0 ) 頁: 927-930 1996年
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Remote plasma hydrogenation of Mg-doped GaN 査読有り
Gotz W, Johnson N M, Walker J, Bour D P, Amano H, Akasaki I
Institute of Physics Conference Series 142 巻 ( 0 ) 頁: 1031-1034 1996年
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Photoluminescence related to the two-dimensional electron gas at a GaN/AlGaN heterointerface 査読有り
Bergman JP, Lundstroem T, Monemar B, Amano H, Akasaki I
Institute of Physics Conference Series 142 巻 ( 0 ) 頁: 935-938 1996年
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Exciton dynamics in GaN 査読有り
Bergman J P, Monemar B, Amano H, Akasaki I, Hiramatsu K, Sawaki N, Detchprohm T
Institute of Physics Conference Series 142 巻 ( 0 ) 頁: 931-934 1996年
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Recent progress of crystal growth, conductivity control and light emitters of column-III nitrides, and future prospect of nitride-based laser diode 査読有り
Akasaki Isamu, Amano Hiroshi, Suemune ikuo
Institute of Physics Conference Series 142 巻 ( 0 ) 頁: 2010/07/10 1996年
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Magneto-optical studies of GaN and GaN/AlxGa1-xN: donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance 査読有り
Wang Y J, Kaplan R, Ng H K, Doverspike K, Gaskill D K, Ikedo T, Akasaki I, Amono H
J. Apl. Phys. 79 巻 ( 0 ) 頁: 8007-8010 1996年
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Effect of Si doping on the dislocation structure of GaN grown on a A-face of sapphire 査読有り
Ruvimov Sergei, Liliental-Weber Zuzanna, Suski Tadesuz, Ager Joel W III, Washburn Jack, Krueger Joachim, Kisielowski Charistian, Weber Eicke R, Amano H, Akasaki I
Appl. Phys. Lett. 69 巻 ( 0 ) 頁: 990-992 1996年
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Photoluminescence related to the two-dimensional electron gas at a GaN/AlGaN heterointerface 査読有り
Bergman J P, Lundstroem t, Monemar B, Amano H, Akasaki I
Appl. Phys. Lett. 69 巻 ( 0 ) 頁: 3456-3458 1996年
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High-resolution x-ray analysis of InGaN/GaN superlattices grown on sapphire substrates with GaN layers 査読有り
Li Wei, Bergman Peder, Ivanov Ivan, Ni Wei-Xin, Amano H, Akasa I
Appl. Phys. Lett. 69 巻 ( 0 ) 頁: 3390-3392 1996年
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Intrinsic optical properties of GaN epilayers grown on SiC substrates: effect of the built-in strain 査読有り
Buyanova I A, Bergman J P, Monemar B, Amano H, Akasaki I
Appl. Phys. Lett. 69 巻 ( 0 ) 頁: 1255-1257 1996年
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75Å GaN channel modulation doped field effect transistors 査読有り
Burm Jinwook, Schaff William J, Eastman Lester F, Amano Hiroshi, Akasaki Isamu
Appl. Phys. Lett. 68 巻 ( 0 ) 頁: 2849-2851 1996年
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Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers 査読有り
Wetzel C, Haller E E, Amano H, Akasaki I
Appl. Phys. Lett. 68 巻 ( 0 ) 頁: 2547/09/01 1996年
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Resonant Raman scattering in hexagonal GaN 査読有り
Behr D, Wagner J, Schneider J, Amano H, Akasaki I
Appl. Phys. Lett. 68 巻 ( 0 ) 頁: 2404/06/01 1996年