論文 - 天野 浩
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AlN and AlGaN by MOVPE for UV light emitting devices 査読有り
Amano, Hiroshi, Imura, Masataka, Iwaya, Motoaki, Kamiyama, Satoshi, Akasaki, Isamu
Materials Science Forum 590 巻 ( 0 ) 頁： 175-210 2008年
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Breakthroughs in improving crystal quality of GaN and invention of the p-n junction blue-light-emitting diode 査読有り
Akasaki, Isamu, Amano, Hiroshi
Japanese Journal of Applied Physics 47 巻 ( 0 ) 頁： 3781 2008年
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Control of p-type conduction in a-plane Ga1-xInxN (0 < x < 0.10) grown on r-plane sapphire substrate by metalorganic vapor-phase epitaxy 査読有り
Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Journal of Crystal Growth 310 巻 ( 0 ) 頁： 4996-4998 2008年
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Control of stress and crystalline quality in GaInN films used for green emitters 査読有り
Iwaya, Motoaki, Miura, Aya, Senda, Ryota, Nagai, Tetsuya, Kawashima, Takeshi, Iida, Daisuke, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Journal of Crystal Growth 310 巻 ( 0 ) 頁： 4920-4922 2008年
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Dynamical study of the radiative recombination processes in GaN/AlGaN QWs 査読有り
Sabooni, Mahmood, Esmaeili, Morteza, Haratizadeh, Hamid, Monemar, Bo, Amano, Hiroshi
Journal of Materials Science: Materials in Electronics 19 巻 ( 0 ) 頁： S316-S318 2008年
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Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates 査読有り
Pozina, G., Hemmingsson, C., Paskov, P. P., Bergman, J. P., Monemar, B., Kawashima, T., Amano, H., Akasaki, I., Usui, A.
Applied Physics Letters 92 巻 ( 0 ) 頁： 151904/1-151904/3 2008年
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High hole concentration in Mg-doped a-plane Ga1-xInxN (0<x<0.30) grown on r-plane sapphire substrate by metalorganic vapor phase epitaxy 査読有り
Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Applied Physics Letters 93 巻 ( 0 ) 頁： 182108/1-182108/3 2008年
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All MOVPE grown nitride-based LED having sub mm underlying GaN 査読有り
Tanaka Y., Ando J., Iida D., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C 5 巻 ( 0 ) 頁： 3073-3075 2008年
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Effect of c-plane sapphire misorientation on the growth of AlN by high-temperature MOVPE 査読有り
Nagamatsu Kentaro, Okada Narihito, Kato Naofumi, Sumii Takafumi, Bandoh Akira, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Physica Status Solidi C 5 巻 ( 0 ) 頁： 3048-3050 2008年
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Improvement in crystalline quality of thick GaInN on m-plane 6H-SiC substrates using sidewall epitaxial lateral overgrowth 査読有り
Senda Ryota, Miura Aya, Kawashima Takeshi, Iida Daisuke, Nagai Tetsuya, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
Physica Status Solidi C 5 巻 ( 0 ) 頁： 3045-3047 2008年
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InGaN growth on ZnO (0001) substrate by metalorganic vapor phase epitaxy 査読有り
Kawai Y., Ohsuka S., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C 5 巻 ( 0 ) 頁： 3023-3025 2008年
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Realization of low-dislocation-density, smooth surface, and thick GaInN films on m-plane GaN templates 査読有り
Miura Aya, Nagai Tetsuya, Senda Ryota, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
J. Crystal Growth 310 巻 ( 0 ) 頁： 3308-3312 2008年
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Improvement in performance of m-plane GaInN light emitting diode grown on m-plane SiC by sidewall epitaxial lateral overgrowth 査読有り
Kawashima T., Hayakawa T., Hayashi M., Nagai T., Iida D., Miura A., Kasamatsu Y., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C 5 巻 ( 0 ) 頁： 2145-2147 2008年
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Optimization of underlying layer and the device structure for group-III-nitride-based UV emitters on sapphire 査読有り
Iida K., Watanabe H., Takeda K., Mori F., Tsuzuki H., Yamashita Y., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Takagi T., Bandoh A.
Physica Status Solidi C 5 巻 ( 0 ) 頁： 2142-2144 2008年
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High drain current and low on resistance normally-off-mode AlGaN/GaN junction HFETs with a p-type GaN gate contact. 査読有り
Fujii T., Nakamura S., Mizuno K., Nega R., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C 5 巻 ( 0 ) 頁： 1906-1909 2008年
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Nonpolar GaN layers grown by sidewall epitaxial lateral overgrowth. Optical evidences for a reduced stacking fault density 査読有り
Paskov P. P., Monemar B., Iida D., Kawashima T., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C 5 巻 ( 0 ) 頁： 1768-1770 2008年
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Microstructure of threading dislocations caused by grain boundaries in AlN on sapphire substrates 査読有り
Imura M., Sugimura H., Okada N., Iwaya M., Kamiyama S., Amano H., Akasaki I., Bando A.
Physica Status Solidi C 5 巻 ( 0 ) 頁： 1582-1584 2008年
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Sidewall epitaxial lateral overgrowth of nonpolar a-plane GaN by metalorganic vapor phase epitaxy 査読有り
Iida Daisuke, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
Physica Status Solidi C 5 巻 ( 0 ) 頁： 1575-1578 2008年
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Growth of high-quality thick AlGaN by high-temperature metalorganic vapor phase epitaxy 査読有り
Kato Naofumi, Sato S., Sugimura H., Sumii T., Okada N., Imura M., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Takagi T., Bandoh A.
Physica Status Solidi C 5 巻 ( 0 ) 頁： 1559-1561 2008年
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Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates 査読有り
Pozina G., Hemmingsson C., Paskov P. P., Bergman J. P., Monemar B., Kawashima T., Amano H., Akasaki I., Usui A.
Appl. Phys. Lett. 92 巻 ( 0 ) 頁： 151904/1-151904/3 2008年