Presentations -
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High Mobility in SiC MOSFETs with Heavily-Doped p-Bodies Invited International conference
T. Kimoto, K. Tachiki, K. Ito, K. Mikami, M. Kaneko, M. Horita, and J. Suda
14th Topical Workshop on Heterostructure Microelectronics 2022.8.30
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Why does the electron trap concentration at EC –0.6 eV have an inverse correlation with the carbon one in n-type GaN layers? International conference
T. Narita, M. Horita, K. Tomita, K. Kachi, and J. Suda
20th International Conference on Metalorganic Vapor Phase Epitaxy 2022.7.11
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Annealing temperature dependence of depth distribution of net donor density in ultra-low concentration Si-ion implanted GaN
Hiroko Iguchi, Masahiro Horita, Jun Suda
2022.3.23
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Effective Vertical Field Dependence of Hall Mobility for SiC MOSFETs with Various Gate Oxides
Koji Ito, Masahiro Horita, Jun Suda, Tsunenobu Kimoto
2022.3.24
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Origin of peak observed in reverse current-voltage characteristics of homoepitaxial GaN pn junction mesa diodes
Takuto Ohashi, Masakazu Kanechika, Takeshi Kondo, Tsutomu Uesugi, Kazuyoshi Tomita, Masahiro Horita, Jun Suda
2022.3.23
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AlSiOゲート酸化膜を用いたGaNパワーMOSFETの進展と課題 Invited
成田 哲生, 伊藤 健治, 菊田 大悟, 冨田 一義, 堀田 昌宏, 加地 徹
第27回 電子デバイス界面テクノロジー研究会 2022.1.29
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Reduction of Temperature and Pressure in Ultra-High-Pressure Annealing for Activation of Mg-Implanted ptype GaN
The 8th Meeting on Advanced Power Semiconductors 2021.12.9
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Origin of Hysteresis in Reverse Current-Voltage Characteristics of GaN pn Junction Mesa Diodes
The 8th Meeting on Advanced Power Semiconductors 2021.12.9
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Dependence of Channel Mobility on Doping Concentration of p-body in Phosphorus-Treated SiC MOSFETs
The 8th Meeting on Advanced Power Semiconductors 2021.12.10
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Hole traps formed by gamma-ray irradiation in homoepitaxial p-type GaN International conference
Keito Aoshima, Masahiro Horita, and Jun Suda
International Conference on Materials and Systems for Sustainability 2021
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Isothermal Annealing Study on Mg-implanted Homoepitaxial GaN International conference
Kensuke Sumida, Kazufumi Hirukawa, Hideki Sakurai, Masahiro Horita, Michal Bockowski, Tetsu Kachi, Jun Suda
International Conference on Materials and Systems for Sustainability 2021
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Universal Mobility in SiC MOSFETs with Very Low Interface State Density International conference
Koji Ito, Masahiro Horita, Jun Suda, Tsunenobu Kimoto
13th European Conference on Silicon Carbide and Related Materials 2021.10.26
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SiO2/n-GaN MOS structures with low interface state density formed by plasma-enhanced atomic layer deposition method International conference
Keito Aoshima, Noriyuki Taoka, Masahiro Horita, Jun Suda
2021 International Conference on Solid State Devices and Materials 2021.9.9
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AlSiO/p型GaN MOSFETにおける移動度制限因子の解析
成田哲生，伊藤健治，冨田一義，堀田昌宏，菊田大悟
第68回応用物理学会春季学術講演会
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GaNにおける電子・正孔の衝突イオン化係数の温度依存性
前田拓也，成田哲生，山田真嗣，加地徹，木本恒暢，堀田昌宏，須田淳
第68回応用物理学会春季学術講演会
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リン処理を施したSiC MOSFETにおける実効移動度のボディ電位依存性
伊藤滉二，堀田昌宏，須田淳，木本恒暢
第68回応用物理学会春季学術講演会
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DLTS法によるn型GaN中の深い準位評価に対してショットキー障壁高さが与える影響の定量的解析
青島慶人，堀田昌宏，須田淳
第68回応用物理学会春季学術講演会
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Mgイオン注入GaNの超高圧アニールによるMgとHの熱拡散
櫻井秀樹，成田哲生，晝川十史，角田健輔，山田真嗣，片岡恵太，堀田昌宏，五十嵐信行，M. Bockowski，須田淳，加地徹
第68回応用物理学会春季学術講演会
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Mgイオン注入p型GaNにおける超高圧アニール温度の低減化に向けた検討
晝川十史，櫻井秀樹，藤倉序章，堀田昌宏，M. Bockowski，乙木洋平，加地徹，須田淳
第68回応用物理学会春季学術講演会
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MOVPE法によるn型GaNドリフト層形成と残留不純物制御 Invited
成田哲生，堀田昌宏，冨田一義，加地徹，須田淳
第49回結晶成長国内会議