講演・口頭発表等 - 黒澤 昌志
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Seed-layer driven solid phase epitaxy of amorphous Ge1-xSnx layers on Si(001) substrates toward in-plane strain control 国際会議
T. Hiraide, M. Kurosawa, S. Shibayama, M. Sakashita, and O. Nakatsuka
International Conference on Solid State Devices and Materials 2023 (SSDM2023)
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高濃度n型ドープSi1−xSnx薄膜の低温熱電物性評価
大岩樹, 柴山茂久, 坂下満男, 中塚理, 片瀬貴義, 黒澤昌志
第7回フォノンエンジニアリング研究会
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Fabrication and evaluation of a planar-type uni-leg SiGe thermoelectric generator 国際会議
S. Koike, R. Yanagisawa, M. Kurosawa, R. Jha, N. Tsujii, T. Mori, and M. Nomura
The 39th Annual International Conference on Thermoelectrics (ICT 2023)
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Low-temperature Thermoelectric Properties of GeSn Alloys Films 国際会議
M. Kurosawa, T. Katase, Y. Imai, M. Nakata, M. Kimura, T. Kamiya, S. Shibayama, M. Sakashita, and O. Nakatsuka
The Joint ISDTM/ICSI conference 2023
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The layer transfer of Ge-lattice-matched SiGeSn epitaxial structures 国際会議
T. Maeda, W. H. Chang, H. Ishii, S. Zhang, S. Shibayama, M. Kurosawa, O. Nakatsuka
The Joint ISDTM/ICSI conference 2023
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Heteroepitaxial Growth of High Substitutional Sn-content Ge1-xSnx Layer Lattice-matched on InP Substrate 国際会議
O. Nakatsuka, K. Takagi, S. Shibayama, M. Kurosawa, and M. Sakashita
The Joint ISDTM/ICSI conference 2023
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Determining the Superiority of Cavity-Free Thermoelectric Generators Composed of GeSn and Si Wires 国際会議
M. M. H. Mahfuz, M. Kurosawa, T. Matsuki, and T. Watanabe
The Joint ISDTM/ICSI conference 2023
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Epitaxy and heterostructure of germanium tin-related group-IV alloy semiconductors for future electronic and optoelectronic applications 国際会議
O. Nakatsuka, M. Kurosawa, S. Shibayama, and M. Sakashita
2023 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors
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GeSn/GeSiSn共鳴トンネルダイオードの室温動作に向けた構造設計
石本修斗, 坂下満男, 黒澤昌志, 中塚理, 柴山茂久
第70回応用物理学会春季学術講演会
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固相成長法による Si(001)基板上の伸長歪み Ge1-xSnx薄膜の形成
平出達磨, 大岩樹, 柴山茂久, 坂下満男, 中塚理, 黒澤昌志
第70回応用物理学会春季学術講演会
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高Sn組成Ge1-xSnx(111)エピタキシャル薄膜の高品質形成
森俊輔, 柴山茂久, 加藤芳規, 坂下満男, 黒澤昌志, 中塚理
第70回応用物理学会春季学術講演会
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半絶縁性基板上Ge1-xSnx薄膜の低温熱電物性
今井志明, 中田壮哉, 木村公俊, 片瀬貴義, 神谷利夫, 柴山茂久, 坂下満男, 中塚理, 黒澤昌志
第70回応用物理学会春季学術講演会
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高濃度n型ドープSi1-xSnx薄膜で観測された巨大熱電能
大岩樹, 柴山茂久, 坂下満男, 中塚理, 片瀬貴義, 黒澤昌志
第70回応用物理学会春季学術講演会
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Potential of Silicon-Germanium-Tin Thin Films for Future Thermoelectric Device Applications 国際会議
M. Kurosawa, S. Shibayama, M. Sakashita, and O. Nakatsuka
ISPlasma2023/IC-PLANTS2023
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Investigating the superiority of the cavity-free architectural GeSn and Si wires-based thermoelectric generators
M. M. H. Mahfuz, M. Tomita, M. Kurosawa, T. Matsuki, and T. Watanabe
第28回 電子デバイス界面テクノロジー研究会
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Arising ferroelectric properties in ZrO2 thin films down to 4 nm 国際会議
S. Ikeguchi, J. Nagano, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Shibayama
13th International Workshop on New Group IV Semiconductor Nanoelectronics
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Development of accurate characterization technique of electrical properties in Ge1-xSnx-based group-IV epitaxial layers 国際会議
T. Mori, S. Shibayama, K. Nishizawa, M. Sakashita, M. Kurosawa, and O. Nakatsuka
13th International Workshop on New Group IV Semiconductor Nanoelectronics
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Crystalline and electrical properties of Ge1-x-ySixSny epitaxial layers - Effect of Si incorporation and H2 irradiation - 国際会議
K. Nishizawa, S. Shibayama, T. Mori, M. Sakashita, M. Kurosawa, and O. Nakatsuka
13th International Workshop on New Group IV Semiconductor Nanoelectronics
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Heteroepitaxy of Ge1-xSnx with a high Sn content over 25% on InP(001) toward group-IV infrared detector 国際会議
K. Takagi, S. Shibayama, M. Sakashita, M. Kurosawa, and O. Nakatsuka
13th International Workshop on New Group IV Semiconductor Nanoelectronics
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Challenge and new opportunity of Ge1−x−ySixSny/Ge1−xSnx heterostructures for optoelectronic and electronic device applications 国際会議
S. Shibayama, S. Zhang, M. Sakashita, M. Kurosawa, and O. Nakatsuka
13th International Workshop on New Group IV Semiconductor Nanoelectronics