論文 - 黒澤 昌志
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Coherent Lateral-Growth of Ge over Insulating Film by Rapid-Melting-Crystallization 査読有り
T. Sadoh, M. Kurosawa, K. Toko, and M. Miyao
Thin Solid Films 頁： Vol. 557, pp. 135–138 2014年4月
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Influence of Ge Substrate Orientation on Crystalline Structures of Ge1-xSnx Epitaxial Layers 査読有り
T. Asano, S. Kidowaki, M. Kurosawa, N. Taoka, O. Nakatsuka, and S. Zaima
Thin Solid Films 頁： Vol. 557, pp. 159–163 2014年4月
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Formation and characterization of locally strained Ge1-xSnx/Ge microstructures 査読有り
S. Ike, Y. Moriyama, M. Kurosawa, N. Taoka, O. Nakatsuka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima
Thin Solid Films 頁： Vol. 557, pp. 164–168 2014年4月
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Reduction of Schottky Barrier Height for n-type Ge Contact by using Sn Electrode 査読有り
A. Suzuki, S. Asaba, J. Yokoi, K. Kato, M. Kurosawa, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima
Japanese Journal of Applied Physics 頁： Vol. 53, Issue 4S, pp. 04EA06-1〜5 2014年3月
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Giant-lateral-growth of SiGe stripes on insulating-substrate by self-organized-seeding and melt-back-growth in solid-liquid coexisting region 査読有り
R. Matsumura, R. Kato, Y. Tojo, M. Kurosawa, T. Sadoh, and M. Miyao
Electrochemical and Solid-State Letters 頁： Vol. 3, Isuue 5, pp. P61-P64 2014年3月
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Large grain growth of Ge-rich Ge1-xSnx (x=0.02) on insulating surfaces using pulsed laser annealing in flowing water 査読有り
M. Kurosawa, N. Taoka, H. Ikenoue, O. Nakatsuka, and S. Zaima
Applied Physics Letters 頁： Vol. 104, Issue 6, pp. 061901-1〜4 2014年2月
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Characterization of Local Strain Structures in Heteroepitaxial Ge1-xSnx/Ge Microstructures by using Microdiffraction Method 査読有り
S. Ike, Y. Moriyama, M. Kurosawa, N. Taoka, O. Nakatsuka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima
ECS Transactions 頁： Vol. 58, Issue 9, pp. 185-192 2013年10月
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Heteroepitaxial Growth of Sn-Related Group-IV Materials on Si Platform for Microelectronic and Optoelectronic Applications: Challenges and Opportunitiesi 査読有り
O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, M. Sakashita, and S. Zaima
ECS Transactions 頁： Vol. 58, Issue 9, pp. 149-155 2013年10月
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Low-Temperature Metal-Induced Crystallization of Orientation-Controlled SiGe on Insulator for Flexible Electronics 査読有り
T. Sadoh, J.-H. Park, M. Kurosawa, and M. Miyao
ECS Transactions 頁： Vol. 58, Issue 9, pp. 213-221 2013年10月
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Liquid-Sn-driven lateral growth of poly-GeSn on insulator assisted by surface oxide layer 査読有り
M. Kurosawa, N. Taoka, M. Sakashita, O. Nakatsuka, M. Miyao, and S. Zaima
Applied Physics Letters 頁： Vol. 103, Issue 11, pp. 101904-1〜4 2013年9月
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Nucleation-controlled gold-induced crystallization for selective formation of Ge(100) and (111) on insulator at low-temperature (~250oC) 査読有り
J.-H. Park, T. Suzuki, M. Kurosawa, M. Miyao, and T. Sadoh
Applied Physics Letters 頁： Vol. 103, Issue 8, pp. 082102-1〜4 2013年8月
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Temperature dependent Al-induced crystallization of amorphous Ge thin films on SiO2 substrates 査読有り
K. Toko, N. Fukata, K. Nakazawa, M. Kurosawa, N. Usami, M. Miyao, T. Suemasu
Journal of Crystal Growth 頁： Vol. 372, pp. 189–192 2013年6月
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High-quality formation of multiply stacked SiGe-on-insulator structures by temperature-modulated successive rapid-melting-growth 査読有り
Y. Tojo, R. Matsumura, H. Yokoyama, M. Kurosawa, K. Toko, T. Sadoh, and M. Miyao
Applied Physics Letters 頁： Vol. 102, Issue 2, pp. 092102-1〜4 2013年3月
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Atomically-coherent-coalescence of two growth-fronts in Ge stripes on insulator by rapid-melting lateral-crystallization 査読有り
M. Kurosawa, K. Toko, T. Sadoh, I. Mizushima, and M. Miyao
ECS Journal of Solid State Science and Technology 頁： Vol. 2, Issue 3, pp. P54-P57 2012年12月
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Growth-rate-dependent laterally graded SiGe profiles on insulator by cooling-rate controlled rapid-melting-growth 査読有り
R. Matsumura, Y. Tojo, M. Kurosawa, T. Sadoh, I. Mizushima, and M. Miyao
Applied Physics Letters 頁： Vol. 101, Issue 24, pp. 241904-1〜5 2012年12月
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Formation of Large Grain SiGe on Insulator by Si Segregation in Seedless-Rapid-Melting Process 査読有り
R. Kato, M. Kurosawa, R. Matsumura, T. Sadoh, and M. Miyao
ECS Transactions 頁： Vol. 50, Issue 9, pp. 431-436 2012年10月
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(Invited) Hybrid-Formation of Ge-on-Insulator Structures on Si Platform by SiGe-Mixing-Triggered Rapid-Melting Growth --- A Road to Artificial Crystal --- 査読有り
M. Miyao, M. Kurosawa, K. Toko, Y. Tojo, and T. Sadoh
ECS Transactions 頁： Vol. 50, Issue 5, pp. 59-70 2012年10月
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Formation of Graded SiGe on Insulator by Segregation-Controlled Rapid-Melting- Growth 査読有り
R. Matsumura, Y. Tojo, H. Yokoyama, M. Kurosawa, T. Sadoh, and M. Miyao
ECS Transactions 頁： Vol. 50, Issue 9, pp. 747-751 2012年10月
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Formation of Large-Grain Ge(111) Films on Insulator by Gold-Induced Layer-Exchange Crystallization at Low Temperature Poster Session 査読有り
J.-H. Park, T. Suzuki, M. Kurosawa, M. Miyao, and T. Sadoh
ECS Transactions 頁： Vol. 50, Issue 9, pp. 475-480 2012年10月
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Single-crystalline laterally-graded GeSn on insulator structures by segregation controlled rapid-melting growth 査読有り
M. Kurosawa, Y. Tojo, R. Matsumura, T. Sadoh, and M. Miyao
Applied Physics Letters 頁： Vol. 101, Issue 9, pp. 091905-1〜4 2012年8月