論文 - 黒澤 昌志
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First-principles investigation of phase transition from zincblende to L10 at high temperature in Si0.5Sn0.5 alloys 査読有り
Yuki Nagae, Masashi Kurosawa, Kenji Shiraishi, and Osamu Nakatsuka
Japanese Journal of Applied Physics 頁： Vol. 64, No. 2, pp. 021004-1〜7 2025年2月
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Ge0.75Sn0.25 on insulator metal-semiconductor-metal photodetector by layer transfer technique 査読有り
Tatsuro Maeda, Hiroyuki Ishii, Wen-Hsin Chang, Komei Takagi, Shigehisa Shibayama, Masashi Kurosawa, and Osamu Nakatsuka
Japanese Journal of Applied Physics 頁： Vol. 64, No. 1, pp. 01SP11-1〜7 2025年1月
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Emergence of negative differential resistance through hole resonant tunneling in GeSn/GeSiSn double barrier structure 査読有り
Shigehisa Shibayama, Shuto Ishimoto, Yoshiki Kato, Mitsuo Sakashita, Masashi Kurosawa, and Osamu Nakatsuka
IEEE Journal of the Electron Devices Society 頁： Vol. 13, pp. 79-85 2025年1月
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Epitaxial growth of Ge1−xSnx thin film with Sn composition of 50% and possibility of Ge-Sn ordered bonding structure formation 査読有り
Shigehisa Shibayama, Kaito Shibata, Mitsuo Sakashita, Masashi Kurosawa, and Osamu Nakatsuka
Applied Physics Express 頁： Vol. 17, No. 11, pp. 115503-1〜4 2024年11月
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Comprehensive study on epitaxial growth of GeSn(111) layers with high Sn content on Si(111) featuring Ge buffer layer 査読有り
S. Shibayama, S. Mori, Y. Kato, M. Sakashita, M. Kurosawa, and O. Nakatsuka
ECS Transactions 頁： Vol. 114, No. 2, pp. 215-224 2024年10月
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Evaluation of Band Structure of Single Crystalline Si-rich SiSn Thin Film 査読有り
H. Ishizaki, R. Yokogawa, Y. Ito, M. Kurosawa, and A. Ogura
ECS Transactions 頁： Vol. 114, No. 2, pp. 225-232 2024年10月
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Synthesis and characterization of CaSi2 films for hydrogenated 2D Si nanosheets 査読有り
Ryota Takagaki, Chiaya Yamamoto, Junji Yamanaka, Keisuke Arimoto, Masashi Kurosawa, and Kosuke O. Hara
Journal of Vacuum Science and Technology A 頁： Vol. 42, Issue 5, pp. 053404-1〜7 2024年8月
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Tensile-strained Ge1−xSnx layers on Si(001) substrate by solid phase epitaxy featuring seed layer introduction 査読有り
T. Hiraide, S. Shibayama, M. Kurosawa, M. Sakashita, and O. Nakatsuka
Japanese Journal of Applied Physics 頁： Vol. 63, No. 4, pp.045505-1〜7 2024年4月
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Ge1-xSnx layers with x~0.25 on InP(001) substrate grown by low-temperature molecular beam epitaxy reaching 70 oC and in-situ Sb doping 査読有り
S. Shibayama, K. Takagi, M. Sakshita, M. Kurosawa, and O. Nakatsuka
Materials Science in Semiconductor Processing 頁： Vol. 176, pp. 108302-1〜8 2024年3月
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Planar-type SiGe thermoelectric generator with double cavity structure 査読有り
S. Koike, R. Yanagisawa, L. Jalabert, R. Anufriev, M. Kurosawa, T. Mori, and M. Nomura
Applied Physics Letters 頁： Vol. 124, Issue 12, pp. 123902-1〜6 2024年3月
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Layer transfer of epitaxially grown Ge-lattice-matched Si27.8Ge64.2Sn8 films 査読有り
T. Maeda, H. Ishii, W. H. Chang, S. Zhang, S. Shibayama, M. Kurosawa, and O. Nakatsuka
Materials Science in Semiconductor Processing 頁： Vol. 176, pp. 108304-1〜7 2024年3月
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Effect of nanostructuring on thermoelectric performance of SiGe thin films 査読有り
S. Koike, R. Yanagisawa, M. Kurosawa, R. Jha, N. Tsujii, T. Mori, and M. Nomura
Japanese Journal of Applied Physics 頁： Voi. 62, No. 9, pp. 095001-1〜4 2023年9月
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Self-organized Ge1−xSnx quantum dots formed on insulators and their room temperature photoluminescence 査読有り
K. Hashimoto, S. Shibayama, K. Asaka, M. Sakashita, M. Kurosawa, and O. Nakatsuka
Japanese Journal of Applied Physics 頁： Vol. 62, No. 7, pp. 075506-1〜8 2023年7月
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Lattice-matched growth of a high-Sn-content (x~0.1) Si1-xSnx layers on Si1-yGey buffers using molecular beam epitaxy 査読有り
K. Fujimoto, M. Kurosawa, S. Shibayama, M. Sakashita, and O. Nakatsuka
Applied Physics Express 頁： Vol. 16, No. 4, pp. 045501-1〜4 2023年4月
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Heteroepitaxial growth of CaGe2 films on high-resistivity Si(111) substrates and its application for germanane synthesizing 査読有り
K. Okada, S. Shibayama, M. Sakashita, O. Nakatsuka, and M. Kurosawa
Materials Science in Semiconductor Processing 頁： Vol. 161, pp. 107462-1〜6 2023年3月
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Preparation and thermoelectric characterization of boron-doped Si nanocrystals/silicon oxide multilayers 査読有り
K. Shibata, S. Kato, M. Kurosawa, K. Gotoh, S. Miyamoto, N. Usami , and Y. Kurokawa
Japanese Journal of Applied Physics 頁： Vol. 62, No. SC, pp. SC1074-1〜8 2023年2月
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Superior Power Generation Capacity of GeSn over Si Demonstrated in Cavity-free Thermoelectric Device Architecture 査読有り
M. M. H. Mahfuz, K. Katayama, Y. Ito, K. Fujimoto, M. Tomita, M. Kurosawa, T. Matsuki, and T. Watanabe
Japanese Journal of Applied Physics 頁： Vol. 62, No. SC, pp. SC1058-1〜6 2023年2月
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Investigation of Band Structure in Strained Single Crystalline Si1-xSnx 査読有り
K. Sahara, R. Yokogawa, Y. Shibayama, Y. Hibino, M. Kurosawa, and A. Ogura
ECS Transactions 頁： Vol. 109, No. 4, pp. 359-366 2022年9月
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Sn-incorporation effect on thermoelectric properties of Sb-doped Ge-rich Ge1−x−ySixSny epitaxial layers grown on GaAs(001) 査読有り
M. Kurosawa, M. Nakata, T. Zhan, M. Tomita, T. Watanabe, and O. Nakatsuka
Japanese Journal of Applied Physics 頁： Vol. 61, No. SC, pp. SC1048-1〜6 2022年7月
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High-pressure polycrystalline thin-film synthesis and semiconducting property of platinum pernitride 査読有り
K. Niwa, T. Iizuka, M. Kurosawa, Y. Nakamura, H. O. Valencia, H. Kishida, O. Nakatsuka, T. Sasaki, N. Gaida, and M. Hasegawa
AIP Advances 頁： Vol. 12, Issue 5, pp.055318-1〜5 2022年5月