Presentations -
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Ge1−xSnx/Ge微細構造による局所歪構造の形成と評価
池進一, 守山佳彦, 黒澤昌志, 田岡紀之, 中塚理, 今井康彦, 木村滋, 手塚勉, 財満鎭明
2013年（平成25年） 第60回応用物理学会 春季学術講演会
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圧縮歪Ge1-xSnxエピタキシャル層の電気伝導特性
浅野孝典，黒澤昌志，田岡紀之，坂下満男，中塚理，財満鎭明
2013年（平成25年） 第60回応用物理学会 春季学術講演会
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Crystalline Properties of Ge1-xSnx Epitaxial Layers on Ge(110) International conference
T. Asano, M. Kurosawa, N. Taoka, O. Nakatsuka, and S. Zaima
6th International WorkShop on New Group IV Semiconductor Nanoelectronics
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Feasibility of Ge Device Fabrication by Low Temperature Processes on ULSI Circuits International conference
N. Taoka, M. Kurosawa, K. Kato, S. Shibayama, M. Sakashita, O. Nakatsuka, and S. Zaima
6th International WorkShop on New Group IV Semiconductor Nanoelectronics
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Low temperature crystallization of group-IV semiconductors induced by eutectic metals (Al, Sn) International conference
M. Kurosawa, N. Taoka, M. Sakashita, O. Nakatsuka, M. Miyao, and S. Zaima
6th International WorkShop on New Group IV Semiconductor Nanoelectronics
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Sn誘起横方向成長法によるGe1-xSnx/SiO2構造の低温形成
黒澤昌志，田岡紀之，坂下満男，中塚理，宮尾正信，財満鎭明
第12回 日本表面科学会中部支部 学術講演会
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次世代フレキシブルデバイス実現に向けた絶縁膜上GeSn薄膜の低温結晶成長
黒澤昌志，田岡紀之，坂下満男，中塚理，宮尾正信，財満鎭明
2012年応用物理学会結晶工学分科会 第1回結晶工学未来塾
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Formation of large-grain Ge(111) films on insulator by gold-induced layer-exchange crystallization at low temperature International conference
J.-H. Park, T. Suzuki, M. Kurosawa, M. Miyao, and T. Sadoh
222th Electrochemical Society (ECS) Meeting
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Formation of Graded SiGe on Insulator by Segregation-Controlled Rapid-Melting- Growth International conference
R. Matsumura, Y. Tojo, H. Yokoyama, M. Kurosawa, T. Sadoh, and M. Miyao
222th Electrochemical Society (ECS) Meeting
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Formation of Large Grain SiGe on Insulator by Si Segregation in Seedless-Rapid-Melting Process International conference
R. Kato, M. Kurosawa, R. Matsumura, T. Sadoh, and M. Miyao
222th Electrochemical Society (ECS) Meeting
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Hybrid-Formation of Ge-on-Insulator Structures on Si Platform by SiGe-Mixing-Triggered Rapid-Melting Growth --- A Road to Artificial Crystal --- International conference
M. Miyao, M. Kurosawa, K. Toko, and T. Sadoh
222th Electrochemical Society (ECS) Meeting
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Laterally Graded SiGe-on-Insulator with Universal Si Profile by Cooling-Rate-Controlled Rapid-Melting-Growth International conference
R. Matsumura, Y. Tojo, H. Yokoyama, M. Kurosawa, T. Sadoh, M. Miyao
International Conference on Solid State Devices and Materials 2012 (SSDM2012)
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Temperature dependent Al-induced crystallization of amorphous Ge thin films on glass substrates International conference
K. Toko, M. Kurosawa, N. Fukata, N. Saitoh, N. Yoshizawa, N. Usami, M. Miyao, and T. Suemasu
International Conference on Solid State Devices and Materials 2012 (SSDM2012)
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High Mobility Poly-GeSn Layer Formed by Low Temperature Solid Phase Crystallization International conference
W. Takeuchi,N. Taoka, M. Kurosawa, M. Fukutome, M. Sakashita, O. Nakatsuka, S. Zaima
International Conference on Solid State Devices and Materials 2012 (SSDM2012)
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Si Segregation Behavior in Giant SiGe Stripes on Insulator during Rapid-Melting-Growth International conference
R. Matsumura, Y. Tojo, H. Yokoyama, M. Kurosawa, T. Sadoh, and M. Miyao
IUMRS Intarnational Conference on Electronic Materials (IUMRS-CEM2012)
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Stripe-Length Dependent Laterally Graded SiGe Profiles by Rapid-Melting-Growth International conference
R. Matsumura, Y. Tojo, H. Yokoyama, M. Kurosawa, T. Sadoh, and M. Miyao
E-MRS 2012 Fall Meeting
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Defect Free Multi-Structures of [SiGe/Insulator]2 on Si (100) platform International conference
Y. Tojo, R. Matsumura, H. Yokoyama, M. Kurosawa, K. Toko, T. Sadoh, and M. Miyao
E-MRS 2012 Fall Meeting
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Al誘起成長法によるGe薄膜/ガラスの(111)面方位制御
都甲薫，黒澤昌志，深田直樹，齋藤徳之，吉澤徳子，宇佐美徳隆，宮尾正信，末益崇
2012年秋季 第73回応用物理学会学術講演会
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Sn触媒を用いた非晶質Ge薄膜/絶縁膜の低温成長
黒澤昌志，田岡紀之，坂下満男，中塚理，宮尾正信，財満鎭明
2012年秋季 第73回応用物理学会学術講演会
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低温固相結晶化による高移動度poly-GeSn層の形成
竹内和歌奈，田岡紀之，黒澤昌志，福留誉司，坂下満男，中塚理，財満鎭明
2012年秋季 第73回応用物理学会学術講演会