Presentations -
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In-situ Sb ドープ Ge1-xSnx エピタキシャル層の結晶性および電気的特性
全智禧, 浅野孝典, 志村洋介, 竹内和歌奈, 黒澤昌志, 坂下満男, 中塚理, 財満鎭明
応用物理学会SC東海地区学術講演会2015
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Crystal growth and energy band engineering of group-IV semiconductor thin films for nanoelectronic applications International conference
O. Nakatsuka, M. Kurosawa, W. Takeuchi, Y. Shimura, M. Sakashita, and S. Zaima
International Workshop on Advanced Nanomaterials for Future Electron Devices 2015 (IWAN2015)
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Recent Progress of Silicon Tin Alloys for Advanced Semiconductor Devices International conference
M. Kurosawa, O. Nakatsuka, and S. Zaima
International Workshop on Advanced Nanomaterials for Future Electron Devices 2015 (IWAN2015)
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Evaluation of energy band structure of Si1-xSnx by density functional theory calculation and photoelectron spectroscopy International conference
Y. Nagae, S. Shibayama, M. Kurosawa, M. Araidai, M. Sakashita, O. Nakatsuka, K. Shiraishi, and S. Zaima
2015 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (2015 IWDTF)
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Ge基板上への超高Sn組成Ge1−xSnxエピタキシャル層の形成およびGe1−xSnx界面層が金属/Geコンタクトのショットキー障壁高さに及ぼす影響
鈴木陽洋, 中塚理, 柴山茂久, 坂下満男, 竹内和歌奈, 黒澤昌志, 財満鎭明
応用物理学会 結晶工学分科会主催 第4回結晶工学未来塾
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Challenges of energy band engineering with new Sn-related group IV semiconductor materials for future integrated circuits International conference
S. Zaima, O. Nakatsuka, T. Yamaha, T. Asano, S. Ike, A. Suzuki, M. Kurosawa, W. Takeuchi, and M. Sakashita
228th Electrochemical Society (ECS) Meeting
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Impact of ultra-high Sn content SnxGe1−x interlayer on reducing Schottky barrier height at metal/n-Ge interface International conference
A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima
International Conference on Solid State Devices and Materials 2015 (SSDM2015)
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Crystal Growth of GeSn-related Group-IV Thin Films for Integrating on Si Nanoelectronics Platform International conference
S. Zaima, O. Nakatsuka, T. Asano, T. Yamaha, Shinichi Ike, A. Suzuki, M. Kurosawa, W. Takeuchi, and M. Sakashita
International Conference on Solid State Devices and Materials 2015 (SSDM2015)
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Influence of in-situ Sb-Doping on Crystalline and Electrical Characteristics of n-type Ge1-xSnx Epitaxial Layer International conference
J. Jeon, T. Asano, W. Takeuchi, M. Kurosawa, O. Nakatsuka, and S. Zaima
International Conference on Solid State Devices and Materials 2015 (SSDM2015)
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Ge1-xSnxエピタキシャル層の結晶性および電気的特性にin-situ Sbドーピングが及ぼす影響
全智禧, 浅野孝典, 竹内和歌奈, 黒澤昌志, 坂下満男, 中塚理, 財満鎭明
第76回応用物理学会秋季学術講演会
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Si1-xSnx薄膜の固相エピタキシャル成長に与えるSn組成の効果
加藤元太, 黒澤昌志, 中塚理, 財満鎭明
第76回応用物理学会秋季学術講演会
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GeSn多結晶膜の移動度に与える下地絶縁膜の効果
吉川勲, 黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
第76回応用物理学会秋季学術講演会
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Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny二重ヘテロ接合の形成および結晶性評価
福田雅大, 山羽隆, 浅野孝典, 藤浪俊介, 黒澤昌志, 中塚理, 財満鎭明
第76回応用物理学会秋季学術講演会
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Si1-x-ySnxCy三元混晶薄膜のエピタキシャル成長および結晶性評価
山羽隆, 矢野翔太, 髙橋恒太, 黒澤昌志, 坂下満男, 中塚理, 財満鎭明
第76回応用物理学会秋季学術講演会
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固相成長法によるSi1-x-ySnxCy多結晶薄膜の形成および結晶構造評価
矢野翔大, 山羽隆, 黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
第76回応用物理学会秋季学術講演会
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Reduction of Schottky barrier height with Sn/Ge contact International conference
A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima
JSPS International Core-to-Core Program Workshop "Atomically Controlled Processing for Ultra-large Scale Integration"
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Development of polycrystalline Sn-related group-IV semiconductor thin films --Aiming for 3D-IC-- International conference
M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima
2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2015)
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Formation of Ge pn-junction diode by phosphorus doping with liquid immersion laser irradiation International conference
K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima
15th International Workshop on Junction Technology (IWJT2015)
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Solid Phase Epitaxy of High Sn Content Si1-xSnx layer (x>0.2) on Ge Substrates for Optical Communication Applications International conference
M. Kato, Y. Nagae, M. Kurosawa, T. Yamaha, N. Taoka, O. Nakatsuka, and S. Zaima
9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9)
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Large Single-Crystal Ge-on-Insulator by Thermally-Assisted Si-Seeded-Pulse-Laser Annealing (≤400oC) International conference
T. Sadoh, M. Kurosawa, A. Heya, N. Matsuo, and M. Miyao
9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9)