Presentations -
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界面エネルギー制御による絶縁膜上GeSn薄膜の低温結晶成長
吉川勲, 黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
電子デバイス界面テクノロジー研究会（第21回）
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Si1–xSnx半導体のエネルギーバンド構造に関する理論的および実験的分析
長江祐樹, 柴山茂久, 黒澤昌志, 洗平昌晃, 中塚理, 白石賢二, 財満鎭明
電子デバイス界面テクノロジー研究会（第21回）
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Formation of poly-Si1-x-ySnxCy ternary alloy layer and characteriziation of its crystalline and optical properties International conference
S. Yano, T. Yamaha, Y. Shimura, W. Takeuchi, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima
9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
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Control of Schottky barrier height at metal/Ge interface by insertion of Ge1-xSnx layer International conference
A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima
9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
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Phosphorus doping into Ge with low electrical damage by liquid immersion laser doping International conference
K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima
9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
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Crystalline and Electrical Properties of in-situ Sb-Doped Ge1-xSnx Epitaxial Layers International conference
J. Jeon, T. Asano, Y. Shimura, W. Takeuchi, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima
9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
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Formation of GeSn layer sandwiched with strain-controlled GeSiSn layers International conference
M. Fukuda, T. Yamaha, T. Asano, S. Fujinami, Y. Shimura, M. Kurosawa, O. Nakatsuka, and S. Zaima
9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
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InP(001)基板上における高 Sn 組成 Si1-xSnx 層の固相エピタキシャル成長
加藤元太, 黒澤昌志, 中塚理, 財満鎭明
第15回 日本表面科学会中部支部 学術講演会
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First-principles study on two-dimensional crystals of group IV element on insulating film International conference
M. Araidai, M. Kurosawa, A. Ohta, and K. Shiraishi
23rd International Colloquium on Scanning Probe Microscopy (ICSPM23)
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Si and Ge Ultrathin Films by Ag-Induced Layer-Exchange Growth International conference
M. Kurosawa, A. Ohta, M. Araidai, and S. Zaima
23rd International Colloquium on Scanning Probe Microscopy (ICSPM23)
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絶縁膜上のIV族系二次元結晶に関する第一原理計算
洗平昌晃, 黒澤昌志, 大田晃生, 白石賢二
2015年真空・表面科学合同講演会
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Ag誘起層交換成長法によるSi極薄膜の形成
黒澤昌志, 大田晃生, 洗平昌晃, 財満鎭明
2015年真空・表面科学合同講演会
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Control of Schottky barrier height of metal/Ge interface by SnxGe1-x interlayer International conference
A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, S. Zaima
International Symposium on EcoTopia Science 2015 (ISETS'15)
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Silicon-tin semiconductors for near-infrared optoelectronic device applications International conference
M. Kurosawa, M. Kato, O. Nakatsuka, and S. Zaima
International Symposium on EcoTopia Science 2015 (ISETS'15)
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Calculation of Si1-xSnx Energy Band Structures by using Density Functional Theory Considering Atomic Configuration International conference
Y. Nagae, M. Kurosawa, S. Shibayama, O. Nakatsuka, and S. Zaima
International Symposium on EcoTopia Science 2015 (ISETS'15)
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Electrical characteristics of Ge pn-junction diodes prepared by using liquid immersion laser doping International conference
K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima
International Symposium on EcoTopia Science 2015 (ISETS'15)
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X-ray microdiffraction characterization of local strain distribution in GeSn/Ge nanostructures International conference
S. Ike, O. Nakatsuka, Y. Moriyama, M. Kurosawa, N. Taoka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima
International Symposium on EcoTopia Science 2015 (ISETS'15)
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固相成長法による Si1-x-ySnxCy 薄膜の形成および結晶・光学物性評価
矢野翔大, 山羽隆, 黒澤昌志, 竹内和歌奈, 志村洋介, 坂下満男, 中塚理, 財満鎭明
応用物理学会SC東海地区学術講演会2015
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超高 Sn 組成 SnxGe1-x エピタキシャル層の形成および金属/SnxGe1-x/Geコンタクトの電気伝導特性の制御
鈴木陽洋, 中塚理, 柴山茂久, 坂下満男, 竹内和歌奈, 黒澤昌志, 財満鎭明
応用物理学会SC東海地区学術講演会2015
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密度汎関数法による Si1–xSnx 価電子帯端準位の理論予測および実験的妥当性
長江祐樹, 柴山茂久, 黒澤昌志, 洗平昌晃, 中塚理, 白石賢二, 財満鎭明
応用物理学会SC東海地区学術講演会2015