Papers - Katsunori Makihara
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Formation of Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Application Reviewed
S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto
Solid State Phenomena Vol. 154 page： 95-100 2009
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Electronic Charged States of Pt-silicide Nanodots as Evaluated by Using an AFM/Kelvin Probe Technique Reviewed
K. Makihara, K. Shimanoe, M. Ikeda, A. Ohta, S. Higashi and S. Miyazaki
Transaction of MRS-J Vol. 34 ( 2 ) page： 309-312 2009
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Charge Storage Characteristics of Hybrid Nanodots Floating Gate Reviewed
S. Miyazaki, K. Makihara and M. Ikeda
ECS TRANSACTIONS Vol. 25 ( 7 ) page： 433-439 2009
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Physics of Nano-contact Between Si Quantum Dots and Inversion Layer Reviewed
Y. Sakurai, S. Nomura, Y. Takada, J. Iwata, K. Shiraishi, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara and S. Miyazaki
ECS TRANSACTIONS Vol. 25 ( 7 ) page： 463-469 2009
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Surface Potential Changes Induced by Physisorption of Si-tagged Protein A on HF-last Si(100) and Thermally Grown SiO2 Surface Reviewed
S. Mahboob, K. Makihara, A. Ohta, S. Higashi, Y. Hata, A. Kuroda and S. Miyazaki
ECS TRANSACTIONS Vol. 19 ( 22 ) page： 35-43 2009
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Self-Assembling Formation of Ninanodots on SiO2 Induced by Remote H2-plasma Treatment and Their Electrical Charging Characteristics Reviewed
K. Makihara, K. Shimanoe, Y. Kawaguchi, M. Ikeda, S. Higashi and S. Miyazaki
Japanese Journal of Applied Physics Vol. 47 ( 4 ) page： 3099-3102 2008
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Low Temperature High-rate Growth of Crystalline Ge Films on Quartz and Crystalline Si Substrates from VHF Inductively-Coupled Plasma of GeH4 Reviewed
T. Sakata, K. Makihara, H. Deki, S. Higashi and S. Miyazaki
Thin Solid Films Vol. 517 ( 1 ) page： 216-218 2008
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Interface Properties and Effective Work Function of Sb-Predoped Fully Silicided NiSi Gate Reviewed
T. Hosoi, K. Sano, A. Ohta, K. Makihara, H. Kaku, S. Miyazaki and K. Shibahara
Surface and Interface Analysis Vol. 40 page： 1126-1130 2008
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Control of Electronic Charged States of Si-Based Quantum Dots for Floating Gate Application Reviewed
S. Miyazaki, K. Makihara and M. Ikeda
Thin Solid Films Vol. 517 ( 1 ) page： 41-44 2008
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Impact of impurity Doping into Si Quantum Dots with Ge Core on Their Electrical Charging Characteristics Reviewed
K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki
Thin Solid Films Vol. 517 ( 1 ) page： 306-308 2008
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Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO2 Reviewed
K. Makihara, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki
ECS TRANSACTIONS Vol. 16 ( 10 ) page： 255-260 2008
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Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO2 Structure as Evaluated by AFM/KFM Reviewed
K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki,
IEICE TRANSACTIONS on Electronics Vol. E91-C ( 5 ) page： 712-715 2008
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Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots Reviewed
J. Xu, K. Makihara, H. Deki, Y. Kawaguchi, H. Murakami, S. Higashi and S. Miyazaki
Solid State Phenomena Vol. 121-123 page： 557-560 2007
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High Rate Growth of Highly-Crystallized Ge Films on Quartz from VHF Inductively-Coupled Plasma of GeH4 + H2
T. Sakata, K. Makihara, H. Deki, S. Higashi and S. Miyazaki
Materials Science Forum Vol. 561-565 page： 1209-1212 2007
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Characterization of chemical bonding features and defect state density in HfSiOxNy/SiO2 gate stack Reviewed
A. Ohta, Y. Munetaka, A. Tsugou, K. Makihara, H. Murakami, S. Higashi, S. Miyazaki, S. Inumiya and Y. Nara
Microelectronic Engineering Vol. 84 page： 2386-2389 2007
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Characterization of Electronic Charged States of Si-Based Quantum Dots for Floating Gate Application Reviewed
S. Miyazaki, M. Ikeda and K. Makihara
ECS TRANSACTIONS Vol. 11 ( 6 ) page： 233-243 2007
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Characterization of Electronic Charged States of Nickel Silicide Nanodots Using AFM/Kelvin Probe Technique Reviewed
R. Nishihara, K. Makihara, Y. Kawaguchi, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki
Materials Science Forum Vol. 561-565 page： 1213-1216 2007
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Characterization of Electronic Charged States of P-doped Si Quantum Dots Using AFM/Kelvin Probe Reviewed
K. Makihara, J. Xu, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki
Thin Solid Films Vol. 508 ( 1-2 ) page： 186-189 2006
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Growth of Crystallized Ge Films from VHF-Inductively Coupled Plasma of H2-Diluted GeH4 Reviewed
T. Sakata, K. Makihara, S. Higashi and S. Miyazaki
Thin Solid Films Vol. 515 ( 12 ) page： 4971-4974 2006
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Study of Charged States of Si Quantum Dots with Ge Core Reviewed
K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki
ECS TRANSACTIONS Vol. 3 ( 7 ) page： 257-262 2006