Faculty Profiles - Katsunori Makihara

Papers - Katsunori Makihara

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Characterization of Light Emission Properties of Impurity Doped Ge/Si Core-Shell Quantum Dots

Miyazaki S., Imai Y., Makihara K.

ECS Transactions Vol. 109 ( 4 ) page： 335 - 341 2022

Language：English Publishing type：Research paper (scientific journal) Publisher：ECS Transactions

We have fabricated valency-controlled Si-QDs with Ge-core with an areal density as high as ~1011 cm-2 on ultrathin SiO2 and studied the effect of phosphorus- and boron-doping on Ge-core from their PL properties. During the Ge deposition, delta doping of phosphorus or boron atoms in QDs was carried out by pulse injection using 1% PH3 or B2H6 diluted with He, respectively. No changes in dot size and density with either P- or B-doping were confirmed by AFM topographic images. Under photoexcitation of undoped QDs with a 976-nm line from a semiconductor laser, broad PL spectra consisting of four Gaussian components originating from radiative recombination through quantized states in QDs were observed in the energy range from 0.62 to 0.85 eV without impurity doping even at room temperature. In the doped QDs, relatively-narrow components peaked at ~0.68 eV and ~0.64eV were observed with P-doping and with B-doping to Ge-core, respectively, in addition to the four components seen in undoped QDs. It is interesting noted that, with an increase in B2H6 pulse injection from 1 to 4 times, the integrated PL intensity was enhanced by a factor of 1.4 to 2.4 compared to that of the undoped QDs while no significant change in spectral shape was observable. This can be interpreted in terms of an increase in the number of holes with B-doping to the Ge core since the carrier recombination rates is proportional to the product of the number of electrons and holes confined in QD under weak photoexcitation.

DOI： 10.1149/10904.0335ecst

Scopus

Surface flattening and Ge crystalline segregation of Ag/Ge structure by thermal anneal Reviewed International journal

Ohta Akio, Yamada Kenzo, Sugawa Hibiki, Taoka Noriyuki, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 60 ( SB ) 2021.5

Energy band diagram for SiO2/Si system as evaluated from UPS analysis under vacuum ultraviolet with variable incident photon energy Reviewed International journal

Ohta Akio, Imagawa Takuya, Taoka Noriyuki, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 60 ( SA ) 2021.1

Energy band diagram for SiO<inf>2</inf>/Si system as evaluated from UPS analysis under vacuum ultraviolet with variable incident photon energy

Ohta A., Imagawa T., Taoka N., Ikeda M., Makihara K., Miyazaki S.

Japanese Journal of Applied Physics Vol. 60 2021.1

Language：English Publishing type：Research paper (scientific journal) Publisher：Japanese Journal of Applied Physics

We have studied the energy band diagram for the Si surface and SiO2/Si system by using ultraviolet photoelectron spectroscopy (UPS) measurements. In the UPS measurements, monochromatized vacuum ultraviolet with variable incident photon energies below 10.50 eV was used in order to increase the detection limit of the depth from the surface and to understand the electronic states not only at the surface but also in the region near the interface of the stacked structure. From the incident photon energy dependence of the UPS spectral width, the energy level of the valence band top of the H-terminated Si surface and the electrical potential change in the SiO2/Si structure has been evaluated. Also, the vacuum work function value of the hetero-epitaxial Ag(111) surface has been investigated to check this measurement technique.

DOI： 10.35848/1347-4065/abb75b

Scopus

Effect of B-doping on photoluminescence properties of Si quantum dots with Ge core Reviewed International journal

Makihara Katsunori, Fujimori Shuntaro, Ikeda Mitsuhisa, Ohta Akio, Miyazaki Seiichi

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 120 2020.12

Characterization of photoluminescence from Si quantum dots with B delta-doped Ge core Reviewed International journal

Maehara Takuya, Fujimori Shuntaro, Ikeda Mitsuhisa, Ohta Akio, Makihara Katsunori, Miyazaki Seiichi

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 119 2020.11

Complex dielectric function of Si oxide as evaluated from photoemission measurements Reviewed International journal

Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 2020.7

Formation of ultrathin segregated-Ge crystal on Al/Ge(111) surface Reviewed

Kobayashi Masato, Ohta Akio, Kurosawa Masashi, Araidai Masaaki, Taoka Noriyuki, Simizu Tomohiro, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 2020.4

Characterization of magnetic-field dependent electron transport of Fe3Si nanodots by using a magnetic AFM probe Reviewed International coauthorship International journal

Wu J.

ECS Transactions Vol. 98 ( 5 ) page： 493 - 498 2020

Electron field emission from multiply-stacked Si quantum dots structures with graphene top-electrode Reviewed International journal

Niibayashi T.

ECS Transactions Vol. 98 ( 5 ) page： 429 - 434 2020

Crystallization of Ge thin films on sapphire(0001) by thermal annealing Reviewed International journal

Sugawa H.

ECS Transactions Vol. 98 ( 5 ) page： 505 - 511 2020

Comparative study of photoluminescence properties obtained from SiO2/GaN and Al2O3/GaN structures

Takada Noriharu, Taoka Noriyuki, Ohta Akio, Yamamoto Taishi, Nguyen Xuan Truyen, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Makihara Katsunori, Shimizu Mitsuaki, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 2019.8

Effect of H-2-dilution in Si-cap formation on photoluminescence intensity of Si quantum dots with Ge core

Fujimori Shuntaro, Nagai Ryo, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 2019.8

Impact of surface pre-treatment on Pt-nanodot formation induced by remote H-2-plasma exposure

Fujimori Shuntaro, Makihara Katsunori, Ikeda Mitsuhisa, Ohta Akio, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 2019.8

Impact of remote plasma oxidation of a GaN surface on photoluminescence properties

Takada Noriharu, Taoka Noriyuki, Yamamoto Taishi, Ohta Akio, Nguyen Xuan Truyen, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Makihara Katsunori, Shimizu Mitsuaki, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 2019.6

Characterization of Electron Field Emission from Multiple-Stacking Si-Based Quantum Dots

Futamura Yuto, Makihara Katsunori, Ohta Akio, Ikeda Mitsuhisa, Miyazaki Seiichi

IEICE TRANSACTIONS ON ELECTRONICS Vol. E102C ( 6 ) page： 458-461 2019.6

Evaluation of the potential distribution in a multiple stacked Si quantum dots structure by hard X-ray photoelectron spectroscopy

Futamura Yuto, Nakashima Yuta, Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( SA ) 2019.2

Characterization of electron charging and transport properties of Si-QDs with phosphorus doped Ge core

Nagai Ryo, Yamada Kentaro, Fujimori Shuntaro, Ikeda Mitsuhisa, Makihara Katsunori, Ohta Akio, Miyazaki Seiichi

SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 33 ( 12 ) 2018.12

Total photoelectron yield spectroscopy of energy distribution of electronic states density at GaN surface and SiO2/GaN interface

Ohta Akio, Nguyen Xuan Truyen, Fujimura Nobuyuki, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 6 ) 2018.6

Low-temperature formation of Ga-oxide/GaN interface with remote oxygen plasma and its interface properties

Yamamoto Taishi, Taoka Noriyuki, Ohta Akio, Nguyen Xuan Truyen, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Makihara Katsunori, Shimizu Mitsuaki, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 6 ) 2018.6

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Papers - Katsunori Makihara