Papers - Katsunori Makihara
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X-ray Photoemission Study of SiO2/Si/Si0.55Ge0.45/Si Heterostructures Reviewed
A. Ohta. K. Makihara, S. Miyazaki, M. Sakuraba and J. Murota
IEICE TRANSACTIONS on Electronics Vol. 96-C ( 5 ) page： 680-685 2013
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Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior Reviewed
A. Ohta, K. Makihara, M. Ikeda, H. Murakamis, S. Higashi and S. Miyazaki
IEICE TRANSACTIONS on Electronics Vol. 96-C ( 5 ) page： 702-707 2013
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Characterization of Resistive Switching of Pt/Si- rich Oxide/TiN System Reviewed
M. Fukushima, A. Ohta, K. Makihara and S. Miyazaki
IEICE TRANSACTIONS on Electronics Vol. 96-C ( 5 ) page： 708-713 2013
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Characterization of Local Electronic Transport through Ultrathin Au/Highly-dense Si Nanocolumar Structures by Conducting-Probe Atomic Force Microscopy Reviewed
D. Takeuchi, K. Makihara, M. Ikeda, S. Miyazaki, H. Kaki and T. Hayashi
IEICE TRANSACTIONS on Electronics Vol. 96-C ( 5 ) page： 718-721 2013
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Photoexcited Carrier Transfer in a NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in MOS Structures Reviewed
M. Ikeda, K. Makihara and S. Miyazaki,
IEICE TRANSACTIONS on Electronics Vol. 96-C ( 5 ) page： 694-698 2013
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Characterization of Electroluminescence from One-dimensionally Self-Aligned Si-based Quantum Dots Reviewed
H. Takami, K. Makihara, M. Ikeda and S. Miyazaki
Japanese Journal of Applied Physics Vol. 52 ( 4 ) page： 04CG08 2013
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Temporal Changes of Charge Distribution in High Density Self-aligned Si-based Quantum Dots as Evaluated by AFM/KFM Reviewed
N. Tsunekawa K. Makihara, M. Ikeda and S. Miyazaki
Trans. of MRS-J Vol. 38 ( 3 ) page： 393-396 2013
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Characterization of Resistive Switching Behaviors of RF Sputtered Si Oxide ReRAMs with Ti-based Electrodes Reviewed
A. Ohta, M. Fukusima, K. Makihara, H. Murakami, S. Higashi and S. Miyazaki
Jpn. J. Appl. Phys. Vol. 52 page： 11NJ06 2013
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Highly-crystallized Ge:H Film Growth from GeH4 VHF-ICP -Crystalline Nucleation Initiated by Ni-nanodots- Reviewed
K. Makihara, J. Gao, K. Sakaike, S. Hayashi, H. Deki, M. Ikeda, S. Higashi and S. Miyazak
Jpn. J. Appl. Phys. Vol. 52 ( 9 ) page： 11NA04 2013
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Study on Charge Storage and Optical Response of Hybrid Nanodots Floating Gate MOS Devices for Their Optoelectronic Application Reviewed
S. Miyazaki, M. Ikeda and K. Makihara
ECS Trans Vol. 58 ( 9 ) page： 231-237 2013
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Resistive Switching Properties of SiOx/TiO2 Multi-Stack in Ti-electrode MIM Diodes Reviewed
A. Ohta, K. Makihara, M. Fukusima, H. Murakami, S. Higashi and S. Miyazaki
ECS Trans Vol. 58 ( 9 ) page： 293-300 2013
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Evaluation of Charge Trapping Properties of Microcrystalline Germanium Thin Films by Kelvin Force Microscopy Reviewed
K. Makihara, H. Deki, M Ikeda and S, Miyazaki
Journal of Non-Crystalline Solids Vol. 358 ( 17 ) page： 2086-2089 2012
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Electroluminescence from One-dimensionally Self-Aligned Si-based Quantum Dots with High Areal Dot Density Reviewed
K. Makihara, H. Deki, M Ikeda and S, Miyazaki
Japanese Journal of Applied Physics Vol. 51 ( 4 ) page： 04DG08 2012
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Characterization of Resistance-Switching Properties of SiOx Films Using Pt Nanodots Electrodes Reviewed
K. Makihara, M. Fukushima, A. Ohta, M. Ikeda and S. Miyazaki
ECS TRANSACTIONS Vol. 50 ( 9 ) page： 459-464 2012
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Study of Electron Transport Characteristics Through Self-Aligned Si-Based Quantum Dots Reviewed
K. Makihara, M. Ikeda and S. Miyazaki
Journal of Applied Physics Vol. 112 page： 104301 2012
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Light Induced Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid FG in MOS Structures Reviewed
N. Morisawa, M. Ikeda, S. Nakanishi, A. Kawanami, K. Makihara and S. Miyazaki
Japanese Journal of Applied Physics Vol. 49 page： 04DJ04 2011
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Characterization of Electronic Charged States of Impurity Doped Si Quantum Dots Using AFM/Kelvin Probe Technique Reviewed
K. Makihara and S. Miyazaki
Japanese Journal of Applied Physics Vol. 49 ( 2 ) page： 065002 2011
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High Density Formation of Ge Quantum Dots on SiO2 Reviewed
K. Makihara, M. Ikeda, A. Ohta, S. Takeuchi, Y. Shimura, S. Zaima and S. Miyazaki
Solid State Electronics Vol. 60 page： 65-69 2011
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Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures Reviewed
N. Morisawa, M. Ikeda, K. Makihara and S. Miyazaki
Key Engineering Materials Vol. 470 page： 135-139 2011
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Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor Reviewed
M. Muraguchi, Y. Sakurai, Y. Takada, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki, Y. Shigeta, T. Endoh
IEICE TRANSACTIONS on Electronics Vol. 94-C ( 5 ) page： 730-736 2011