Papers - Katsunori Makihara
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The Impact of H2 Anneal on Resistive Switching in Pt/TiO2/Pt Structure Reviewed
G. Wei, Y. Goto, A. Ohta, K. Makihara, H. Murakami, S. Higashi and S. Miyazaki
IEICE TRANSACTIONS on Electronics Vol. 94-C ( 5 ) page： 699-704 2011
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Collective Tunneling Model in Charge Trap Type NVM Cell Reviewed
M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi, and T. Endoh
Japanese Journal of Applied Physics Vol. 50 ( 4 ) page： 04DD04 2011
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Study on Native Oxidation of Ge (111) and (100) Surfaces Reviewed
S. K. Sahari, H. Murakami, T. Fujioka, T. Bando, A. Ohta, K. Makihara, S. Higashi and S. Miyazaki
Japanese Journal of Applied Physics Vol. 50 ( 4 ) page： 04DA12 2011
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Formation of High Density Pt Nanodots on SiO2 Induced by Millisecond Rapid Thermal Annealing using Thermal Plasma Jet for Floating Gate Memory Reviewed
K. Makihara, K. Matsumoto, M. Yamane, T. Okada, N. Morisawa, M. Ikeda, S. Higashi and S. Miyazaki
Japanese Journal of Applied Physics Vol. 50 ( 8 ) page： 08KE06 2011
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Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure Reviewed
M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi and T. Endoh
Key Engineering Materials Vol. 470 page： 48-53 2011
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Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots Reviewed
Y. Sakurai, J. Iwata, M. Muraguchi, Y. Shigeta, Y. Takada, S. Nomura, T. Endoh, S. Saito, K. Shiraishi, M. Ikeda, K. Makihara and S. Miyazaki
Japanese Journal of Applied Physics Vol. 49 ( 1 ) page： 014001 2010
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Formation and Characterization of Hybrid Nanodot Stack Structure for Floating Gate Application
S. Miyazaki, K. Makihara, M. Ikeda
Thin Solid Films Vol. 518 page： S30-S34 2010
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Formation of High Density Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Memory Application Reviewed
S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto
Journal of of Materials Science Forum Vol. 638-642 page： 1725-1730 2010
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Anomalous temperature dependence of electron tunneling between a two-dimensional electron gas and Si dots Reviewed
Y. Sakurai, S. Nomura, Y. Takada, K. Shiraishi, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki
Physica E Vol. 42 ( 4 ) page： 918–921 2010
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Formation Mechanism of Metal nanodots Induced by Remote Plasma Exposure Reviewed
K. Makihara, K. Shimanoe, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki
Journal of Optoelectronics and Advanced Materials Vol. 12 ( 3 ) page： 626-630 2010
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Electron Tunneling between Si Quantum dots and Tow Dimensional Electron Gas under Optical Excitation at Low Temperatures Reviewed
Y. Sakurai, Y. Takada, J-I Iwata, K. Shiraishi, S. Nomura, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki
ECS TRANSACTIONS Vol. 28 ( 1 ) page： 369-374 2010
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Effect of Chemical Composition of SiOx Films on Rapid Formation of Si Nanocrystals Induced by Thermal Plasma Jet Irradiation Reviewed
T. Okada, S. Higashi, H. Kaku, K. Makihara, H. Furukawa, Y. Hiroshige and S. Miyazaki
Physica Status Solidi C Vol. 7 ( 3-4 ) page： 732-734 2010
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Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots Reviewed
K. Makihara, M. Ikeda, A. Kawanami and S. Miyazaki
IEICE TRANSACTIONS on Electronics Vol. 93-C ( 5 ) page： 569-572 2010
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Formation of Cobalt and Cobalt-silicide Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasma Reviewed
A. Kawanami, K. Makihara, M. Ikeda and S. Miyazaki
Japanese Journal of Applied Physics Vol. 49 page： 08JA04 2010
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Importance of Electronic State of Two-Dimensional Electron Gas for Electron Injection Process in Nano-Electronic Devices Reviewed
M. Muraguchi, T. Endoh, Y. Takada, Y. Sakurai, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki, and Y. Shigeta
Physica E Vol. 43 ( 10 ) page： 2602–2605 2010
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Formation of Pseudo-Expitaxial Ge Films on Si(100) by Droplet of Ge Microliquid Reviewed
T. Matsumoto, S. Higashi, K. Makihara, M. Akazawa and Seiichi Miyazaki
ECS TRANSACTIONS Vol. 33 ( 6 ) page： 165-170 2010
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Self-Align Formation of Si Quantum Dots Reviewed
K. Makihara, M. Ikeda, H. Deki, A. Ohta and S. Miyazaki
ECS TRANSACTIONS Vol. 33 ( 6 ) page： 661-667 2010
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Electroluminescence from Si Quantum Dots/SiO2 Multilayers with Ultrathin Oxide Layers due to Bipolar Injection Reviewed
J. Xu, K. Makihara, H. Deki and S. Miyazaki
Solid State Communications Vol. 149 page： 739-742 2009
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Temperature Dependence of Capacitance of Si Quantum Dot Floating Gate MOS Capacitor Reviewed
Y. Sakurai, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara and S.Miyazaki
Journal of Physics: Condensed Matter Vol. 150 page： 022071 2009
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Formation of Pd Nanodots Induced by Remote Hydrogen Plasma Treatment and Its Application to Floating Gate MOS Memories Reviewed
K. Shimanoe, K. Makihara, M. Ikeda, R. Matsumoto, S. Higashi and S. Miyazaki
IEICE TRANSACTIONS on Electronics Vol. 92-C ( 5 ) page： 616-619 2009