Papers - Katsunori Makihara
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Low-temperature formation of crystalline Si:H/Ge:H heterostructures by plasma-enhanced CVD in combination with Ni-nanodots seeding nucleation
Lu Yimin, Makihara Katsunori, Takeuchi Daichi, Ikeda Mitsuhisa, Ohta Akio, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 6 ) 2017.6
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Embedding of Ti Nanodots into SiOx and Its Impact on Resistance Switching Behaviors
Kato Yusuke, Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi
IEICE TRANSACTIONS ON ELECTRONICS Vol. E100C ( 5 ) page： 468-474 2017.5
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Photoemission study on electrical dipole at SiO2/Si and HfO2/SiO2 interfaces
Fujimura Nobuyuki, Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 4 ) 2017.4
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Effects of remote hydrogen plasma on chemical bonding features and electronic states of 4H-SiC(0001) surface
Truyen Nguyen Xuan, Ohta Akio, Makihara Katsunori, Ikeda Mitsuhisa, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 1 ) 2017.1
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High-density formation of Ta nanodot induced by remote hydrogen plasma
Wang Yaping, Takeuchi Daichi, Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 1 ) 2017.1
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Embedding of Ti Nanodots into SiOx and Its Impact on Resistance Switching Behaviors Reviewed
Y. Kato, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki
IEICE TRANSACTIONS on Electronics Vol. E100-C page： 468-474 2017
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Low Temperature Formation of Crystalline Si:H/Ge:H Heterostructures by Plasma Enhanced CVD in Combination with Ni-NDs Seeding Nucleation Reviewed
Y. Lu, K. Makihara, D. Takeuchi, M. Ikeda, A. Ohta, and S. Miyazaki
Japanese Journal of Applied Physics Vol. 56 page： 06GG07 (4page) 2017
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Potential Changes and Chemical Bonding Features for Si-MOS Diode as Evaluated from HAXPES Analysis Reviewed
A. Ohta, H. Murakami, M. Ikeda, K. Makihara, E. Ikenaga, and S. Miyazaki
Microelectronic Engineering Vol. 178 page： 80-84 2017
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Evaluation of Energy Distribution of Filled Defects of Si Oxide Thin Films from Total Photoelectron Yield Spectroscopy Reviewed
A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki
Microelectronic Engineering Vol. 178 page： 85-88 2017
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Impact of Phosphorus Doping to Multiple-Stacked Si Quantum Dots on Electron Emission Properties Reviewed
D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, S. Miyazaki
Materials Science in Semiconductor Processing Vol. 70 page： 183-187 2017
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Photoemission Study on Electrical Dipole at SiO2/Si and HfO2/SiO2 Interfaces Reviewed
N. Fujimura, A. Ohta, M. Ikeda, K. Makihara, S. Miyazaki
Jpn. J. Appl. Phys. Vol. 56 page： 4CB04 (6pages) 2017
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Magnetoelectronic transport of double stack FePt nanodots Reviewed
K. Makihara, T. Kawase, A. Ohta, M. Ikeda, and S. Miyazaki
Appl. Phys. Lett. Vol. 111 page： 052403 (4pages) 2017
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Processing and Characterization of High Density Si/Ge Quantum Dots for Electroluminescent Devices
Miyazaki Seiichi, Yamada Kentaro, Makihara Katsunori, Ikeda Mitsuhisa
SEMICONDUCTOR PROCESS INTEGRATION 10 Vol. 80 ( 4 ) page： 167-172 2017
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Evaluation of Dielectric Function of Thermally-grown SiO2 and GeO2 from Energy Loss Signals for XPS Core-line Photoelectrons Reviewed
T. Yamamoto, A. Ohta, M. Ikeda, K. Makihara and S. Miyazaki
ECS Trans. Vol. 75 ( 8 ) page： 777-783 2016
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Nano spin-diodes using FePt-NDs with huge on/off current ratio at room temperature Reviewed
K. Makihara, T. Kato, Y. Kabeya, Y. Mitsuyuki, A. Ohta, D. Oshima, S. Iwata, Y. Darma, M. Ikeda and S. Miyazaki
Scientific Reports Vol. 6 page： 33409 (7 pages) 2016
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Formation and characterization of high-density FeSi nanodots on SiO2 induced by remote H2 plasma Reviewed
H. Zhang, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
Jpn, J. Appl. Phys. Vol. 55 page： 01AE20 2016
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Evaluation of field emission properties from multiple-stacked Si quantum dots Reviewed
D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
Thin Solid Films Vol. 602 page： 68-71 2016
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Study on electroluminescence from multiply-stacking valency controlled Si quantum dots Reviewed
T. Yamada, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
Thin Solid Films Vol. 602 page： 48-51 2016
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Effect of Ge Core Size on Photoluminescence from Si Quantum Dots with Ge Core Reviewed
K. Yamada, K. Kondo, K. Makihara, M. Ikeda, A. Ohta and S. Miyazaki
ECS Trans. Vol. 75 ( 8 ) page： 695-700 2016
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Photoluminescence study of high density Si quantum dots with Ge core Reviewed
K. Kondo, K. Makihara, M. Ikeda, and S. Miyazaki
Journal of Applied Physics Vol. 19 page： 033103 (5pages) 2016