Faculty Profiles - Katsunori Makihara

Papers - Katsunori Makihara

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Crystalline phase transition of ultra-thin Ni-silicide film during SiH4 exposure

Tanida, S; Taoka, N; Makihara, K

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 64 ( 2 ) 2025.2

Language：English Publishing type：Research paper (scientific journal) Publisher：Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Formation of an ultrathin Ni-silicide on SiO2 by exposing a Ni ultrathin film to pure SiH4 gas at 280 °C was tried. During the formation, impacts of Ni-film thickness and SiH4 exposure time on silicidation reaction were investigated. It was found that surface roughness depends on the Ni-film thickness, and that, in the case of the 3 nm thick Ni-film, a smooth surface was obtained even after the SiH4 exposure. Also, it was found that the silicidation reaction is limited between 3 and 5 min, and that, after the SiH4 exposure time more than 5 min, crystalline phase transition from the Si-rich Ni-silicide to the Ni-rich Ni-silicide and formation of Si-rich Ni-silicide with poor crystallinity were confirmed. Consequently, we successfully formed the ultra-thin Ni-silicide film with the smooth surface even at the low temperature.

DOI： 10.35848/1347-4065/adaafc

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Study of dot size effect on electron emission from Si-QDs multiple-stacked structures

Baek, J; Makihara, K; Obayashi, S; Imai, Y; Taoka, N; Miyazaki, S

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 63 ( 9 ) 2024.9

Language：English Publishing type：Research paper (scientific journal) Publisher：Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

We have fabricated diodes with different sized Si quantum dots (QDs) by precisely controlled low-pressure chemical vapor deposition using a pure SiH4 gas and studied the effect of dot size on field electron emission properties of their multiple‒stacked structures. At an applied bias of ∼9 V, the emission current of ∼4.0 nm height dot‒stacks is two orders of magnitude higher than that of ∼5.9 nm height dot‒stacks. These results can be interpreted in terms of an increase in the number of electrons with higher kinetic energy due to the increase in discrete energy levels associated with the reduction in the dot size, which suppresses electron scattering within the dot, and the electric field concentration resulting from the decrease in the curvature of the dot.

DOI： 10.35848/1347-4065/ad759b

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Electron emission from alignment-controlled multiple stacks of SiGe nanodots embedded in Si structures

Makihara, K; Yamamoto, Y; Yagi, H; Li, LR; Taoka, N; Tillack, B; Miyazaki, S

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 174 2024.5

Language：English Publishing type：Research paper (scientific journal) Publisher：Materials Science in Semiconductor Processing

We fabricated a vertically aligned and staggered structure comprising 20–stacking layers of SiGe–nanodots (NDs) embedded in Si via reduced–pressure chemical vapor deposition and investigated their electron emission properties. The SiGe–NDs with a 35% Ge content were deposited using SiH4–GeH4, while Si spacers were deposited using SiH4 or SiH2Cl2 to control a 3D–alignment of staggered or dot–on–dot structure, respectively. Top Au electrodes with 5–nm–thick SiO2 and bottom Al contact were fabricated for electron emission measurements. After applying a bias of −3.8 V to the bottom Al–electrode with respect to the grounded top Au–electrode, electron emission was observed from the staggered SiGe–ND stack, which was slightly lower than that of the vertically–aligned NDs. In addition, we also observed a reduction in sample current with the formation of the staggered SiGe–ND stack. These results indicate that aligning SiGe–NDs in a staggered configuration suppresses leakage current and improves electron emission efficiency.

DOI： 10.1016/j.mssp.2024.108227

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Self-assembling mechanism of Si-QDs on thermally grown SiO2

Baek, J; Imai, Y; Tsuji, R; Makihara, K; Miyazaki, S

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 63 ( 4 ) 2024.4

Language：English Publishing type：Research paper (scientific journal) Publisher：Japanese Journal of Applied Physics

The self-assembling formation of Si quantum dots (Si-QDs) on as-grown SiO2 layers was shown by controlling the early stages of low-pressure chemical vapor deposition of SiH4. The QD height and radius distributions assessed by atomic force microscopy and scanning electron microscopy images revealed that the Si-QDs become hemispherical due to them being rate-limited by aggregation, which reduces the surface energy at substrate temperatures above ∼580 °C. Moreover, at temperatures below ∼580 °C, semi-ellipsoidal shaped Si-QDs are formed because the precursor supply is a dominant factor.

DOI： 10.35848/1347-4065/ad2fe1

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Formation of one-dimensionally self-aligned Si-QDs and their local electron discharging properties

Imai, Y; Makihara, K; Yamamoto, Y; Wen, WC; Schubert, MA; Baek, J; Tsuji, R; Taoka, N; Ohta, A; Miyazaki, S

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 63 ( 4 ) 2024.4

Language：English Publishing type：Research paper (scientific journal) Publisher：Japanese Journal of Applied Physics

Self-aligned Si-quantum-dots (Si-QDs) with an areal density as high as ∼1011 cm−2 have been fabricated on ultrathin SiO2 by using a ∼4.5 nm thick poly-Si on insulator (SOI) substrate, and controlling low-pressure CVD using monosilane (SiH4), and followed by thermal oxidation. By controlling the thermal oxidation processes of Si-QDs and the poly-Si layer, we have successfully demonstrated the vertical alignment of Si-QDs, where the Si-QDs are also used as a shadow mask of the underlying poly-Si layer. We also demonstrated in-plane alignment of the one-dimensionally self-aligned Si-QDs on line-patterned SiO2. In addition, from surface potential measurements by using atomic force microscopy/Kelvin probe force microscopy, we confirmed that the initial surface potential change caused by valence electron extraction from the dots to the tip was stably maintained until ∼120 min, implying the quantum confinement effect at discrete energy levels of the upper and lower-QDs.

DOI： 10.35848/1347-4065/ad38f7

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Self-assembling formation of Si-QDs on SiO2 line patterns

Tsuji, R; Imai, Y; Baek, J; Makihara, K; Miyazaki, S

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 63 ( 3 ) 2024.3

Language：English Publishing type：Research paper (scientific journal) Publisher：Japanese Journal of Applied Physics

The lateral growth of Si-quantum dots (QDs) on line-patterned SiO2 from the thermal decomposition of pure monosilane (SiH4) has been systematically examined. We confirmed that the Si-QDs diameter in the line direction of the SiO2 patterns has the same growth rate as the SiO2 thin film surface without the line patterns. Moreover, it has been found that in the growth of Si-QDs in the width direction, a surface migration of Si precursors adsorbed from space regions could contribute to dots growth on line-patterned SiO2, which results in an elliptical growth. Furthermore, we have demonstrated a one-dimensional arrangement of highly dense-elliptical shaped Si-QDs with high uniformity in size by controlling line width, CVD time, and temperature.

DOI： 10.35848/1347-4065/ad1ca0

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Formation of ultra-thin nickel silicide on SiO2 using Si/Ni/Si structures for oxidation control

Kimura, K; Taoka, N; Ohta, A; Makihara, K; Miyazaki, S

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 63 ( 2 ) 2024.2

Language：English Publishing type：Research paper (scientific journal) Publisher：Japanese Journal of Applied Physics

We have demonstrated the formation of ultrathin Ni silicide on SiO2 by annealing Si/Ni/Si structures and have systematically evaluated the impacts of the Si layer thickness on oxidation, surface roughening and the silicidation reaction. X-ray photoelectron spectroscopy analyses revealed that suppression of Ni oxidation due to the top Si layer makes it possible to form an ultrathin Ni silicide layer with a thickness of around 2 nm. Then, it turned out that the composition ratio of Ni and Si depends on not only the annealing temperature but also the initial thickness ratio of the top and bottom Si layers. Furthermore, this work clarified that the ultra-thin top Si layer has a large impact on the surface morphology during Ni silicide formation with diffusion and preferential oxidation.

DOI： 10.35848/1347-4065/ad1777

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Formation of β-FeSi2 nanodots by SiH4 exposure to Fe nanodots

Saito, H; Makihara, K; Taoka, N; Miyazaki, S

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 63 ( 2 ) 2024.2

Language：English Publishing type：Research paper (scientific journal) Publisher：Japanese Journal of Applied Physics

We have demonstrated the formation of β-FeSi2 nanodots (NDs) with an areal density as high as ∼1011 cm−2 on SiO2 by exposing Fe NDs to SiH4 at 400 °C and characterized their RT light-emission properties. After SiH4 exposure, even at 1.0 Pa for 60 s, stable photoluminescence (PL) signals, being characteristic of the semiconducting phase of β-FeSi2, were observed in the energy region from 0.7 to 0.85 eV. With an increase in the amount of SiH4 exposure from 60 to 600 Pa·sec, PL intensity increased by a factor of ∼13. Note that, with a further increase in the amount of SiH4 over 600 Pa·sec, the PL intensity is weakened slightly. The observed decrease in the PL intensity is attributable to the selective growth of Si onto the NDs after the formation of the β-FeSi2 phase.

DOI： 10.35848/1347-4065/ad1898

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Alignment control of self-assembling Si quantum dots

Yuki Imai, Ryoya Tsuji, Katsunori Makihara, Noriyuki Taoka, Akio Ohta, Seiichi Miyazaki

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 162 2023.8

Language：English Publishing type：Research paper (scientific journal) Publisher：ELSEVIER SCI LTD

We have demonstrated the formation of one-dimensionally aligned self-assembling silicon quantum dots (Si-QDs) by low-pressure (LP) CVD using pure monosilane (SiH4) gas. Formation of Si-QDs on line-patterned SiO2 formed on p-Si(100) after low-temperature oxidation was carried out. From AFM images taken after LPCVD, we confirmed high-density Si-QDs formation with an areal density as high as-1011 cm-2 on the OH-terminated SiO2-line while dot density as low as-1010 cm-2 on as-grown SiO2. We also confirmed that, with a decreasing the SiO2 line width, the number of Si-QDs on the SiO2-line was decreased evidently. Based on the results, we have succeeded in the one-dimensional arrangement of Si-QDs on the-30 nm-width SiO2 line-patterns.

DOI： 10.1016/j.mssp.2023.107526

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Layer transfer of ultrathin Ge crystal segregated on Al/Ge(111) structure

Matsushita Keigo, Ohta Akio, Shibayama Shigehisa, Tokunaga Tomoharu, Taoka Noriyuki, Makihara Katsunori, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 62 ( SG ) 2023.6

Language：English Publishing type：Research paper (scientific journal) Publisher：Japanese Journal of Applied Physics

Effects of the surface modification by O2 plasma exposure on the Al/Ge(111) structure have been investigated in order to get an insight into a layer transfer technique of the ultrathin Ge layer segregated on the Al/Ge(111) structure toward the device fabrication, and then the wafer bonding of the Al/Ge(111) structure to the thermally-grown SiO2/Si structure has been demonstrated. The O2 plasma treatment and the subsequent pure water rinse were found to be effective to form the hydrophilic surface of the Al/Ge(111) structure with a suppression of the segregated Ge layer oxidation. The Al/Ge(111) structure with the hydrophilic surface was then bonded to the SiO2/Si substrate, and its bonding strength was enough to perform Ge thinning by the chemical mechanical polishing and the wet-chemical etching using H2O2-based solutions. Ohmic contact of the ring-type device pattern with the segregated Ge/Al stack was achieved by using the remaining p-type Ge substrate as the contact pads.

DOI： 10.35848/1347-4065/acb65c

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Room Temperature Light Emission from Superatom-like Ge-Core/Si-Shell Quantum Dots

Katsunori Makihara, Yuji Yamamoto, Yuki Imai, Noriyuki Taoka, Markus Andreas Schubert, Bernd Tillack, Seiichi Miyazaki

NANOMATERIALS Vol. 13 ( 9 ) 2023.4

Language：English Publishing type：Research paper (scientific journal) Publisher：MDPI

We have demonstrated the high-density formation of super-atom-like Si quantum dots with Ge-core on ultrathin SiO2 with control of high-selective chemical-vapor deposition and applied them to an active layer of light-emitting diodes (LEDs). Through luminescence measurements, we have reported characteristics carrier confinement and recombination properties in the Ge-core, reflecting the type II energy band discontinuity between the Si-clad and Ge-core. Additionally, under forward bias conditions over a threshold bias for LEDs, electroluminescence becomes observable at room temperature in the near-infrared region and is attributed to radiative recombination between quantized states in the Ge-core with a deep potential well for holes caused by electron/hole simultaneous injection from the gate and substrate, respectively. The results will lead to the development of Si-based light-emitting devices that are highly compatible with Si-ultra-large-scale integration processing, which has been believed to have extreme difficulty in realizing silicon photonics.

DOI： 10.3390/nano13091475

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PubMed

Characterization of magnesium channeled implantation layers in GaN(0001)

Suyama Atsushi, Kawanowa Hitoshi, Minagawa Hideaki, Maekawa Junko, Nagamachi Shinji, Aoki Masahiko, Ohta Akio, Makihara Katsunori, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 62 ( SC ) 2023.4

Language：English Publishing type：Research paper (scientific journal) Publisher：Japanese Journal of Applied Physics

The effect of Mg channeled implantation into epitaxially grown gallium nitride (GaN) was studied using Hall-effect measurements, photoluminescence (PL), transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM) and Rutherford backscattering spectroscopy (RBS). In the channeled implantation, deeper profiles were obtained with lower implantation energy and less damage compared to random implantation. The donor-acceptor pair signal at ∼3.28 eV, suggesting that Mg is activated, was confirmed by PL measurement when the ion dose and implantation energy are 1 × 1014 cm−2 and 20 keV, respectively. However, even with channeled implantation, several types of defects including point defects and oblong defects as seen in the random implantation were observed by TEM/STEM analysis. RBS analysis showed slightly worse crystal qualities in channeled implantation compared to non-implanted samples. Mg channeled implantation is useful to achieve deeper profiles (>1 μm), but further condition tuning of process will be necessary for practical application.

DOI： 10.35848/1347-4065/acb951

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Formation of ultra-thin NiGe film with single crystalline phase and smooth surface

Nishimura Shunsuke, Taoka Noriyuki, Ohta Akio, Makihara Katsunori, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 62 ( SC ) 2023.4

Language：English Publishing type：Research paper (scientific journal) Publisher：Japanese Journal of Applied Physics

Formation of an ultra-thin nickel-germanide (Ni-germanide) film on a SiO2 film has been attempted with stacking structures of Ni with various thicknesses formed on Ge films with thicknesses of 4 nm or 20 nm and annealing in an N2 ambient condition. Physical analyses revealed that the ultra-thin Ni-germanide films with smooth surfaces could be formed on the SiO2 film after annealing at 400 °C without depending on the Ni thickness on the 4 nm thick Ge films. In the formation, reductive and oxidative reactions occurred in the films, which are quite important for determining a composition of the Ni-germanide.

DOI： 10.35848/1347-4065/acac6f

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Evaluation of chemical structure and Si segregation of Al/Si(111)

Sakai Taiki, Ohta Akio, Matsushita Keigo, Taoka Noriyuki, Makihara Katsunori, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 62 ( SC ) 2023.4

Language：English Publishing type：Research paper (scientific journal) Publisher：Japanese Journal of Applied Physics

Control of diffusion and segregation of Si atoms through a thin metal layer from a stacked Si structure is one of the effective techniques to grow two-dimensional (2D) or ultrathin Si crystals. We have studied the formation of the Al layer with a flat surface and high crystallinity on a wet-cleaned Si(111) wafer by thermal evaporation in order to use it as a growth template for ultrathin Si crystals. Then, the impacts of the annealing in N2 ambient on the surface flatness, the Al crystallinity, and the chemical bonding features for the Al/Si(111) structure were investigated. A formation of a sub-nanometer Si layer on the Al(111) surface using Si segregation with keeping surface flatness was demonstrated by the control of annealing temperature.

DOI： 10.35848/1347-4065/acb1fd

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Effects of Cl passivation on Al2O3/GaN interface properties

Nagai Taisei, Taoka Noriyuki, Ohta Akio, Makihara Katsunori, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 62 ( SA ) 2023.1

Language：English Publishing type：Research paper (scientific journal) Publisher：Japanese Journal of Applied Physics

We investigated the effects of a HCl-based cleaning (SC2) and post-deposition annealing (PDA) on an Al2O3/GaN interface and electrical properties. X-ray photoelectron spectroscopy revealed the existence of the Cl atoms near the interface after the Al2O3 deposition and subsequent PDA, resulting in a band bending at the GaN surface. A C-V curve of a MOS capacitor with the Al2O3/GaN interface with SC2 was shifted toward the positive bias direction compared with that without SC2. It was found that PDA induced negative shifts of the C-V curves, and that the SC2 treatment increases interface trap density at the Al2O3/GaN interface. These results indicate that the Cl termination of the GaN surface has clear impacts on the interface and electrical properties.

DOI： 10.35848/1347-4065/ac73d9

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Study on Electron Emission from Phosphorus ?-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures

Katsunori Makihara, Tatsuya Takemoto, Shuji Obayashi, Akio Ohta, Noriyuki Taoka, Seiichi Miyazaki

IEICE TRANSACTIONS ON ELECTRONICS Vol. E105C ( 10 ) page： 610 - 615 2022.10

Language：English Publishing type：Research paper (scientific journal) Publisher：IEICE-INST ELECTRONICS INFORMATION COMMUNICATION ENGINEERS

We have fabricated two-tiered heterostructures consisting of phosphorus delta-doped Si quantum dots (Si-QDs) and undoped Si-QDs and studied their electron field emission properties. Electron emission was observed from the P-doped Si-QDs stack formed on the undoped Si-QDs stack by applying a forward bias of similar to 6 V, which was lower than that for pure Si-QDs stack. This result is attributed to electric field concentration on the upper P-doped Si-QD layers beneath the layers of the undoped Si-QDs stack due to the introduction of phosphorus atom into the Si-QDs, which was positively charged due to the ionized P donor. The results lead to the development of planar-type electron emission devices with a low-voltage operation.

DOI： 10.1587/transele.2021FUP0006

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CiNii Research

Impact of substrate heating during Al deposition and post annealing on surface morphology, Al crystallinity, and Ge segregation in Al/Ge(111) structure

Matsushita Keigo, Ohta Akio, Taoka Noriyuki, Hayashi Shohei, Makihara Katsunori, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 61 ( SH ) 2022.7

Language：English Publishing type：Research paper (scientific journal) Publisher：Japanese Journal of Applied Physics

We have studied the impact of Ge substrate heating during ∼25 nm thick Al deposition and post annealing in N2 ambient on the surface flatness of an Al/Ge(111) structure, the crystallographic structure of the deposited Al layer, and formation of a Ge segregated layer. Surface segregation of Ge atoms on a flat metal surface is an effective means of growing two-dimensional Ge crystals as well as an ultrathin Ge crystalline layer. The surface morphology of the Al/Ge(111) structure becomes flat by substrate heating during Al deposition. The crystallinity of the Al layer on Ge(111) can be improved by both substrate heating and post annealing. Ge segregation on a flat Al(111) surface also occurred by post annealing.

DOI： 10.35848/1347-4065/ac5fbc

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Study on silicidation reaction of Fe nanodots with SiH4

Furuhata, H; Makihara, K; Shimura, Y; Fujimori, S; Imai, Y; Ohta, A; Taoka, N; Miyazaki, S

APPLIED PHYSICS EXPRESS Vol. 15 ( 5 ) 2022.5

Language：English Publishing type：Research paper (scientific journal) Publisher：Applied Physics Express

We have demonstrated the formation of Fe-silicide nanodots (NDs) on SiO2 by exposing Fe NDs to SiH4. The Fe NDs were formed by exposing ultrathin Fe film deposited on SiO2 to remote H2-plasma. After SiH4 exposure at 400 °C, formation of Fe-silicide NDs with an areal dot density over 1011 cm-2 was confirmed. Photoluminescence from the Fe-silicide NDs was observable at room temperature in the near-infrared, being attributed to radiative recombination between quantized states in the NDs. The results will lead to the development of Si-based light-emitting devices that are highly compatible with Si ultralarge-scale-integration processing.

DOI： 10.35848/1882-0786/ac6727

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Effect of substrate temperature on plasma-enhanced self-assembling formation of high-density FePt nanodots

Honda Shunsuke, Makihara Katsunori, Taoka Noriyuki, Furuhata Hiroshi, Ohta Akio, Oshima Daiki, Kato Takeshi, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 61 ( SA ) 2022.1

Language：English Publishing type：Research paper (scientific journal) Publisher：Japanese Journal of Applied Physics

We formed FePt magnetic nanodots (NDs) by exposing an ultrathin bilayer metal stack on ∼3.0 nm SiO2/Si(100) substrates to a remote H2 plasma (H2-RP) and studied the effect of external heating during the exposure to H2-RP on the formation and magnetic properties of NDs. The ultrathin bilayer with a uniform surface coverage drastically changed to NDs with an areal density as high as ∼3.5 × 1011 cm-2 by exposing to H2-RP with external heating. We also found that NDs formed by the exposure to H2-RP at 400 °C exhibited a perpendicular anisotropy with a perpendicular coercivity of ∼1.5 kOe, reflecting the magneto-crystalline anisotropy of (001)-oriented L10 phase FePt.

DOI： 10.35848/1347-4065/ac2036

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Segregation control for ultrathin Ge layer in Al/Ge(111) system

Akio Ohta, Masato Kobayashi, Noriyuki Taoka, Mistuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 61 ( SA ) 2022.1

Language：English Publishing type：Research paper (scientific journal) Publisher：IOP Publishing Ltd

An impact of the vacuum anneal of Al/Ge(111) structure on the Ge segregation has been investigated to get an insight into the precise control of ultrathin Ge crystalline growth. The Al/Ge(111) structure was prepared by thermal evaporation of Al on wet-cleaned Ge(111) and then vacuum annealed without air exposure to promote Ge formation on the Al surface. The Ge formation and its chemical bonding features were evaluated by X-ray photoelectron spectroscopy analysis. In addition, changes in the average Ge thickness depending on annealing temperature and time were crudely estimated. We found that the annealing temperature had a greater effect than time on the control of sub-nanometer scale Ge growth.

DOI： 10.35848/1347-4065/ac19ff

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Characterization of Light Emission Properties of Impurity Doped Ge/Si Core-Shell Quantum Dots

Miyazaki S., Imai Y., Makihara K.

ECS Transactions Vol. 109 ( 4 ) page： 335 - 341 2022

Language：English Publishing type：Research paper (scientific journal) Publisher：ECS Transactions

We have fabricated valency-controlled Si-QDs with Ge-core with an areal density as high as ~1011 cm-2 on ultrathin SiO2 and studied the effect of phosphorus- and boron-doping on Ge-core from their PL properties. During the Ge deposition, delta doping of phosphorus or boron atoms in QDs was carried out by pulse injection using 1% PH3 or B2H6 diluted with He, respectively. No changes in dot size and density with either P- or B-doping were confirmed by AFM topographic images. Under photoexcitation of undoped QDs with a 976-nm line from a semiconductor laser, broad PL spectra consisting of four Gaussian components originating from radiative recombination through quantized states in QDs were observed in the energy range from 0.62 to 0.85 eV without impurity doping even at room temperature. In the doped QDs, relatively-narrow components peaked at ~0.68 eV and ~0.64eV were observed with P-doping and with B-doping to Ge-core, respectively, in addition to the four components seen in undoped QDs. It is interesting noted that, with an increase in B2H6 pulse injection from 1 to 4 times, the integrated PL intensity was enhanced by a factor of 1.4 to 2.4 compared to that of the undoped QDs while no significant change in spectral shape was observable. This can be interpreted in terms of an increase in the number of holes with B-doping to the Ge core since the carrier recombination rates is proportional to the product of the number of electrons and holes confined in QD under weak photoexcitation.

DOI： 10.1149/10904.0335ecst

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Surface flattening and Ge crystalline segregation of Ag/Ge structure by thermal anneal Reviewed International journal

Ohta Akio, Yamada Kenzo, Sugawa Hibiki, Taoka Noriyuki, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 60 ( SB ) 2021.5

Energy band diagram for SiO2/Si system as evaluated from UPS analysis under vacuum ultraviolet with variable incident photon energy Reviewed International journal

Ohta Akio, Imagawa Takuya, Taoka Noriyuki, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 60 ( SA ) 2021.1

Energy band diagram for SiO<inf>2</inf>/Si system as evaluated from UPS analysis under vacuum ultraviolet with variable incident photon energy

Ohta A., Imagawa T., Taoka N., Ikeda M., Makihara K., Miyazaki S.

Japanese Journal of Applied Physics Vol. 60 2021.1

Language：English Publishing type：Research paper (scientific journal) Publisher：Japanese Journal of Applied Physics

We have studied the energy band diagram for the Si surface and SiO2/Si system by using ultraviolet photoelectron spectroscopy (UPS) measurements. In the UPS measurements, monochromatized vacuum ultraviolet with variable incident photon energies below 10.50 eV was used in order to increase the detection limit of the depth from the surface and to understand the electronic states not only at the surface but also in the region near the interface of the stacked structure. From the incident photon energy dependence of the UPS spectral width, the energy level of the valence band top of the H-terminated Si surface and the electrical potential change in the SiO2/Si structure has been evaluated. Also, the vacuum work function value of the hetero-epitaxial Ag(111) surface has been investigated to check this measurement technique.

DOI： 10.35848/1347-4065/abb75b

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Effect of B-doping on photoluminescence properties of Si quantum dots with Ge core Reviewed International journal

Makihara Katsunori, Fujimori Shuntaro, Ikeda Mitsuhisa, Ohta Akio, Miyazaki Seiichi

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 120 2020.12

Characterization of photoluminescence from Si quantum dots with B delta-doped Ge core Reviewed International journal

Maehara Takuya, Fujimori Shuntaro, Ikeda Mitsuhisa, Ohta Akio, Makihara Katsunori, Miyazaki Seiichi

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 119 2020.11

Complex dielectric function of Si oxide as evaluated from photoemission measurements Reviewed International journal

Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 2020.7

Formation of ultrathin segregated-Ge crystal on Al/Ge(111) surface Reviewed

Kobayashi Masato, Ohta Akio, Kurosawa Masashi, Araidai Masaaki, Taoka Noriyuki, Simizu Tomohiro, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 2020.4

Characterization of magnetic-field dependent electron transport of Fe3Si nanodots by using a magnetic AFM probe Reviewed International coauthorship International journal

Wu J.

ECS Transactions Vol. 98 ( 5 ) page： 493 - 498 2020

Electron field emission from multiply-stacked Si quantum dots structures with graphene top-electrode Reviewed International journal

Niibayashi T.

ECS Transactions Vol. 98 ( 5 ) page： 429 - 434 2020

Crystallization of Ge thin films on sapphire(0001) by thermal annealing Reviewed International journal

Sugawa H.

ECS Transactions Vol. 98 ( 5 ) page： 505 - 511 2020

Comparative study of photoluminescence properties obtained from SiO2/GaN and Al2O3/GaN structures

Takada Noriharu, Taoka Noriyuki, Ohta Akio, Yamamoto Taishi, Nguyen Xuan Truyen, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Makihara Katsunori, Shimizu Mitsuaki, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 2019.8

Effect of H-2-dilution in Si-cap formation on photoluminescence intensity of Si quantum dots with Ge core

Fujimori Shuntaro, Nagai Ryo, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 2019.8

Impact of surface pre-treatment on Pt-nanodot formation induced by remote H-2-plasma exposure

Fujimori Shuntaro, Makihara Katsunori, Ikeda Mitsuhisa, Ohta Akio, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 2019.8

Impact of remote plasma oxidation of a GaN surface on photoluminescence properties

Takada Noriharu, Taoka Noriyuki, Yamamoto Taishi, Ohta Akio, Nguyen Xuan Truyen, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Makihara Katsunori, Shimizu Mitsuaki, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 2019.6

Characterization of Electron Field Emission from Multiple-Stacking Si-Based Quantum Dots

Futamura Yuto, Makihara Katsunori, Ohta Akio, Ikeda Mitsuhisa, Miyazaki Seiichi

IEICE TRANSACTIONS ON ELECTRONICS Vol. E102C ( 6 ) page： 458-461 2019.6

Evaluation of the potential distribution in a multiple stacked Si quantum dots structure by hard X-ray photoelectron spectroscopy

Futamura Yuto, Nakashima Yuta, Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( SA ) 2019.2

Characterization of electron charging and transport properties of Si-QDs with phosphorus doped Ge core

Nagai Ryo, Yamada Kentaro, Fujimori Shuntaro, Ikeda Mitsuhisa, Makihara Katsunori, Ohta Akio, Miyazaki Seiichi

SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 33 ( 12 ) 2018.12

Total photoelectron yield spectroscopy of energy distribution of electronic states density at GaN surface and SiO2/GaN interface

Ohta Akio, Nguyen Xuan Truyen, Fujimura Nobuyuki, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 6 ) 2018.6

Low-temperature formation of Ga-oxide/GaN interface with remote oxygen plasma and its interface properties

Yamamoto Taishi, Taoka Noriyuki, Ohta Akio, Nguyen Xuan Truyen, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Makihara Katsunori, Shimizu Mitsuaki, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 6 ) 2018.6

Interface properties of SiO2/GaN structures formed by chemical vapor deposition with remote oxygen plasma mixed with Ar or He

Nguyen Xuan Truyen, Taoka Noriyuki, Ohta Akio, Makihara Katsunori, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Shimizu Mitsuaki, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 6 ) 2018.6

Growth of two-dimensional Ge crystal by annealing of heteroepitaxial Ag/Ge(111) under N-2 ambient

Ito Koichi, Ohta Akio, Kurosawa Masashi, Araidai Masaaki, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 6 ) 2018.6

Evaluation of resistive switching properties of Si-rich oxide embedded with Ti nanodots by applying constant voltage and current

Ohta Akio, Kato Yusuke, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 6 ) 2018.6

Energy band structure and electrical properties of Ga-oxide/GaN interface formed by remote oxygen plasma

Yamamoto Taishi, Taoka Noriyuki, Ohta Akio, Nguyen Xuan Truyen, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Makihara Katsunori, Nakatsuka Osamu, Shimizu Mitsuaki, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 6 ) 2018.6

Direct evaluation of electrical dipole moment and oxygen density ratio at high-k dielectrics/SiO2 interface by X-ray photoelectron spectroscopy analysis

Fujimura Nobuyuki, Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 4 ) 2018.4

Segregated SiGe ultrathin layer formation and surface planarization on epitaxial Ag(111) by annealing of Ag/SiGe(111) with different Ge/(Si plus Ge) compositions

Ito Koichi, Ohta Akio, Kurosawa Masashi, Araidai Masaaki, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 4 ) 2018.4

High thermal stability of abrupt SiO2/GaN interface with low interface state density

Nguyen Xuan Truyen, Taoka Noriyuki, Ohta Akio, Makihara Katsunori, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Shimizu Mitsuaki, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 4 ) 2018.4

Characterization of remote O-2-plasma-enhanced CVD SiO2/GaN(0001) structure using photoemission measurements

Nguyen Xuan Truyen, Ohta Akio, Makihara Katsunori, Ikeda Mitsuhisa, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 1 ) 2018.1

Formation of Mn-germanide nanodots on ultrathin SiO2 induced by remote hydrogen plasma

Wen Yinghui, Makihara Katsunori, Ohta Akio, Ikeda Mitsuhisa, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 1 ) 2018.1

Electroluminescence of superatom-like Ge-core/Si-shell quantum dots by alternate field-effect-induced carrier injection

Makihara Katsunori, Ikeda Mitsuhisa, Fujimura Nobuyuki, Yamada Kentaro, Ohta Akio, Miyazaki Seiichi

APPLIED PHYSICS EXPRESS Vol. 11 ( 1 ) 2018.1

Electroluminescence of superatom-like Ge-core/Si-shell quantum dots by alternate field-effect-induced carrier injection Reviewed

K. Makihara, M. Ikeda, N. Fujimura, K. Yamada, A. Ohta, and S. Miyazaki

Applied Physics Express Vol. 11 page： 011305 (4pages) 2018

Segregated SiGe ultrathin layer formation and surface planarization on epitaxial Ag(111) by annealing of Ag/SiGe(111) with different Ge/(Si+Ge) compositions Reviewed

K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki

Japanese Jounal of Applied Physics Vol. 57 page： 04FJ05 2018

Characterization of remote O2-plasma-enhanced CVD SiO2/GaN(0001) structure using photoemission measurements Reviewed

N. X. Truyen, A. Ohta, K. Makihara, M. Ikeda, and S. Miyazaki

Japanese Jounal of Applied Physics Vol. 57 page： 01AD02 2018

Carrier Conduction in SiO2/GaN Structure with Abrupt Interface

Nguyen Xuan Truyen, Taoka Noriyuki, Ohta Akio, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Makihara Katsunori, Shimizu Mitsuaki, Miyazaki Seiichi

2018 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA) page： . 2018

High Density Formation and Magnetoelectronic Transport Properties of Fe3Si Nanodots Reviewed

Hai Zhang, Katsunori Makihara, Mitsuhisa Ikeda, Akio Ohta, and Seiichi Miyazaki

ECS Trans. Vol. 86 ( 7 ) page： 131-138 2018

Impact of phosphorus doping to multiple-stacked Si quantum dots on electron emission properties

Takeuchi Daichi, Makihara Katsunori, Ohta Akio, Ikeda Mitsuhisa, Miyazaki Seiichi

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 70 page： 183-187 2017.11

Thermal Stability of SiO2/GaN Interface Formed by Remote Plasma CVD

NGUYEN TRUYEN XUAN, Taoka Noriyuki, Ohta Akio, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Makihara Katsunori, Shimizu Mitsuaki, Miyazaki Seiichi

JSAP Annual Meetings Extended Abstracts Vol. 2017.2 ( 0 ) page： 3024 - 3024 2017.8

Magnetoelectronic transport of double stack FePt nanodots

Makihara Katsunori, Kawase Taiga, Ohta Akio, Ikeda Mitsuhisa, Miyazaki Seiichi

APPLIED PHYSICS LETTERS Vol. 111 ( 5 ) 2017.7

Evaluation of energy distribution of filled defects of Si oxide thin films from total photoelectron yield spectroscopy

Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

MICROELECTRONIC ENGINEERING Vol. 178 page： 85-88 2017.6

Potential changes and chemical bonding features for Si-MOS structure as evaluated from HAXPES analysis

Ohta Akio, Murakami Hideki, Ikeda Mitsuhisa, Makihara Katsunori, Ikenaga Eiji, Miyazaki Seiichi

MICROELECTRONIC ENGINEERING Vol. 178 page： 80-84 2017.6

Low-temperature formation of crystalline Si:H/Ge:H heterostructures by plasma-enhanced CVD in combination with Ni-nanodots seeding nucleation

Lu Yimin, Makihara Katsunori, Takeuchi Daichi, Ikeda Mitsuhisa, Ohta Akio, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 6 ) 2017.6

Embedding of Ti Nanodots into SiOx and Its Impact on Resistance Switching Behaviors

Kato Yusuke, Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

IEICE TRANSACTIONS ON ELECTRONICS Vol. E100C ( 5 ) page： 468-474 2017.5

Photoemission study on electrical dipole at SiO2/Si and HfO2/SiO2 interfaces

Fujimura Nobuyuki, Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 4 ) 2017.4

Effects of remote hydrogen plasma on chemical bonding features and electronic states of 4H-SiC(0001) surface

Truyen Nguyen Xuan, Ohta Akio, Makihara Katsunori, Ikeda Mitsuhisa, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 1 ) 2017.1

High-density formation of Ta nanodot induced by remote hydrogen plasma

Wang Yaping, Takeuchi Daichi, Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 1 ) 2017.1

Embedding of Ti Nanodots into SiOx and Its Impact on Resistance Switching Behaviors Reviewed

Y. Kato, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki

IEICE TRANSACTIONS on Electronics Vol. E100-C page： 468-474 2017

Low Temperature Formation of Crystalline Si:H/Ge:H Heterostructures by Plasma Enhanced CVD in Combination with Ni-NDs Seeding Nucleation Reviewed

Y. Lu, K. Makihara, D. Takeuchi, M. Ikeda, A. Ohta, and S. Miyazaki

Japanese Journal of Applied Physics Vol. 56 page： 06GG07 (4page) 2017

Potential Changes and Chemical Bonding Features for Si-MOS Diode as Evaluated from HAXPES Analysis Reviewed

A. Ohta, H. Murakami, M. Ikeda, K. Makihara, E. Ikenaga, and S. Miyazaki

Microelectronic Engineering Vol. 178 page： 80-84 2017

Evaluation of Energy Distribution of Filled Defects of Si Oxide Thin Films from Total Photoelectron Yield Spectroscopy Reviewed

A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki

Microelectronic Engineering Vol. 178 page： 85-88 2017

Impact of Phosphorus Doping to Multiple-Stacked Si Quantum Dots on Electron Emission Properties Reviewed

D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, S. Miyazaki

Materials Science in Semiconductor Processing Vol. 70 page： 183-187 2017

Photoemission Study on Electrical Dipole at SiO2/Si and HfO2/SiO2 Interfaces Reviewed

N. Fujimura, A. Ohta, M. Ikeda, K. Makihara, S. Miyazaki

Jpn. J. Appl. Phys. Vol. 56 page： 4CB04 (6pages) 2017

Magnetoelectronic transport of double stack FePt nanodots Reviewed

K. Makihara, T. Kawase, A. Ohta, M. Ikeda, and S. Miyazaki

Appl. Phys. Lett. Vol. 111 page： 052403 (4pages) 2017

Processing and Characterization of High Density Si/Ge Quantum Dots for Electroluminescent Devices

Miyazaki Seiichi, Yamada Kentaro, Makihara Katsunori, Ikeda Mitsuhisa

SEMICONDUCTOR PROCESS INTEGRATION 10 Vol. 80 ( 4 ) page： 167-172 2017

Evaluation of Dielectric Function of Thermally-grown SiO2 and GeO2 from Energy Loss Signals for XPS Core-line Photoelectrons Reviewed

T. Yamamoto, A. Ohta, M. Ikeda, K. Makihara and S. Miyazaki

ECS Trans. Vol. 75 ( 8 ) page： 777-783 2016

Nano spin-diodes using FePt-NDs with huge on/off current ratio at room temperature Reviewed

K. Makihara, T. Kato, Y. Kabeya, Y. Mitsuyuki, A. Ohta, D. Oshima, S. Iwata, Y. Darma, M. Ikeda and S. Miyazaki

Scientific Reports Vol. 6 page： 33409 (7 pages) 2016

Formation and characterization of high-density FeSi nanodots on SiO2 induced by remote H2 plasma Reviewed

H. Zhang, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki

Jpn, J. Appl. Phys. Vol. 55 page： 01AE20 2016

Evaluation of field emission properties from multiple-stacked Si quantum dots Reviewed

D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki

Thin Solid Films Vol. 602 page： 68-71 2016

Study on electroluminescence from multiply-stacking valency controlled Si quantum dots Reviewed

T. Yamada, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki

Thin Solid Films Vol. 602 page： 48-51 2016

Effect of Ge Core Size on Photoluminescence from Si Quantum Dots with Ge Core Reviewed

K. Yamada, K. Kondo, K. Makihara, M. Ikeda, A. Ohta and S. Miyazaki

ECS Trans. Vol. 75 ( 8 ) page： 695-700 2016

Photoluminescence study of high density Si quantum dots with Ge core Reviewed

K. Kondo, K. Makihara, M. Ikeda, and S. Miyazaki

Journal of Applied Physics Vol. 19 page： 033103 (5pages) 2016

Processing and Characterization of Si/Ge Quantum Dots Reviewed

S. Miyazaki, K. Makihara, A. Ohta, and M. Ikeda

Technical Digest of Int. Electron Devices Meeting page： 826-830 2016

High-density formation of Ta nanodot induced by remote hydrogen plasma Reviewed

Y. Wang, D. Takeuchi, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki

Jpn. J. of Appl. Phys. Vol. 56 page： 01AE01/4pages 2016

Impact of Embedded Mn Nanodots on Resistive Switching Characteristics of Si-rich Oxides as Measured in Ni-Electrodes MIM Diodes Reviewed

T. Arai, A. Ohta, K. Makihara, and S. Miyazaki

Jpn. J. of Appl. Phys. Vol. 55 page： 06GH07/5pages 2016

Evaluation of Valence Band Top and Electron Affinity of SiO2 and Si-based Semiconductors Using XPS Reviewed

N. Fujimura, A. Ohta, K. Makihara, and S. Miyazaki

Jpn. J. of Appl. Phys. Vol. 55 page： 08PC06/5pages 2016

Effects of remote hydrogen plasma on chemical bonding features and electronic states of 4H-SiC(0001) surface Reviewed

N. X. Truyen, A. Ohta, K. Makihara, M. Ikeda and S. Miyazaki

Jpn. J. of Appl. Phys. Vol. 56 page： 01AF01/5pages 2016

High Density Formation of FePt Alloy Nanodots Induced by Remote Hydrogen Plasma and Characterization of their Magnetic Properties Reviewed

R. Fukuoka, K. Makihara, H. Zhang, A. Ohta, T. Kato, S. Iwata, M. Ikeda and S. Miyazaki

Trans. Mat. Res. Sco. Japan Vol. 40 ( 4 ) page： 347-350 2015

Electronic defect states in thermally-grown SiO2/4H-SiC structure measured by total photoelectron yield spectroscopy Reviewed

A. Ohta, K. Makihara and S. Miyazaki

Microelectronic Engineering Vol. 147 page： 264-268 2015

Progress in determination method for ultrathin Si-based oxide bandgaps from analysis of energy loss signals for photoelectrons Reviewed

A. Ohta, H. Murakami, K. Makihara and S. Miyazaki

Jpn, J. Appl. Phys. Vol. 54 page： 06FH08 2015

Increase in the work function of W/WO3 by helium plasma irradiation Reviewed

S. Kajita, A. Ohta, T. Ishida, K. Makihara, T. Yoshida and N. Ohno

Jpn, J. Appl. Phys. Vol. 54 page： 126201 2015

Resistive Switching Characteristics of Si-Rich Oxides with Embedding Ti Nanodots Reviewed

Y. Kato, T. Arai, A. Ohta, K. Makihara and S. Miyazaki

ECS Trans. Vol. 69 ( 10 ) page： 291-298. 2015

Photoemission Study on Chemical Bonding Features and Electronic Defect States of Thermally-Grown SiO2/4H-SiC Structure Reviewed

H. Watanabe, A. Ohta, K. Makihara and S. Miyazaki

ECS Trans. Vol. 69 ( 10 ) page： 179-186 2015

Resistance-Switching Characteristics of Si-rich Oxide Evaluated by Using Ni Nanodots as Electrodes in Conductive AFM Measurements Reviewed

A. Ohta, C. Liu, T. Arai, D. Takeuchi, H. Zhang, K. Makihara, and S. Miyazaki

IEICE TRANSACTIONS on Electronics Vol. E98-C page： 406-410 2015

Selective Growth of Self-Assembling Si and SiGe Quantum Dots Reviewed

K. Makihara,M. Ikeda and S. Miyazaki

IEICE Trans. on Electronics Vol. E97-C ( 5 ) page： 393-396 2014

High-Sensitive Detection of Electronic Emission through Si-Nanocrystals/Si-Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy Reviewed

D. Takeuchi,K. Makihara,M. Ikeda,S. Miyazaki,H. Kaki and T. Hayashi

IEICE Trans. on Electronics Vol. E97-C ( 5 ) page： 397-400 2014

Application of remote hydrogen plasma to selective processing for Ge-based devices: Crystallization, etching, and metallization Reviewed

K. Makihara, M. Ikeda, T. Okada, and S. Miyazaki

Jpn. J. Appl. Phys. Vol. 53 page： 11RA02 2014

Effect of electric field concentration using nanopeak structures on the current-voltage characteristics of resistive switching memory Reviewed

S. Otsuka, T. Shimizu, S. Shingubara, K. Makihara, S. Miyazaki, A. Yamasaki, Y. Tanimoto and K. Takase

AIP Advances Vol. 4 page： 087110 (7 pages) 2014

Characterization of Chemical Bonding Features and Interfacial Reactions in Ge-MIS Structure with HfO2/TaGexOy Dielectric Stack Reviewed

A. Ohta, H. Murakami, K. Hashimoto, K. Makihara and S. Miyazaki

ECS Trans. Vol. 64 ( 6 ) page： 241-248 2014

Characterization of Electron Emission from High Density Self-Aligned Si-Based Quantum Dots by Conducting-Probe Atomic Force Microscopy Reviewed

D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki

ECS Trans. Vol. 64 ( 6 ) page： 923-928 2014

Photoluminescence Study of Si Quantum Dots with Ge Core Reviewed

K. Makihara, K. Kondo, M. Ikeda, A. Ohta and S. Miyazaki

ECS Trans. Vol. 64 ( 6 ) page： 365-370 2014

High Density Formation of Iron Nanodots on SiO2 Induced by Remote Hydrogen Plasma Reviewed

H. Zhang, R. Fukuoka, Y. Kabeya, K. Makihara and S. Miyazaki

Advanced Materials Research Vol. 750-752 page： 1011-1015 2013

X-ray Photoemission Study of SiO2/Si/Si0.55Ge0.45/Si Heterostructures Reviewed

A. Ohta. K. Makihara, S. Miyazaki, M. Sakuraba and J. Murota

IEICE TRANSACTIONS on Electronics Vol. 96-C ( 5 ) page： 680-685 2013

Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior Reviewed

A. Ohta, K. Makihara, M. Ikeda, H. Murakamis, S. Higashi and S. Miyazaki

IEICE TRANSACTIONS on Electronics Vol. 96-C ( 5 ) page： 702-707 2013

Characterization of Resistive Switching of Pt/Si- rich Oxide/TiN System Reviewed

M. Fukushima, A. Ohta, K. Makihara and S. Miyazaki

IEICE TRANSACTIONS on Electronics Vol. 96-C ( 5 ) page： 708-713 2013

Characterization of Local Electronic Transport through Ultrathin Au/Highly-dense Si Nanocolumar Structures by Conducting-Probe Atomic Force Microscopy Reviewed

D. Takeuchi, K. Makihara, M. Ikeda, S. Miyazaki, H. Kaki and T. Hayashi

IEICE TRANSACTIONS on Electronics Vol. 96-C ( 5 ) page： 718-721 2013

Photoexcited Carrier Transfer in a NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in MOS Structures Reviewed

M. Ikeda, K. Makihara and S. Miyazaki,

IEICE TRANSACTIONS on Electronics Vol. 96-C ( 5 ) page： 694-698 2013

Characterization of Electroluminescence from One-dimensionally Self-Aligned Si-based Quantum Dots Reviewed

H. Takami, K. Makihara, M. Ikeda and S. Miyazaki

Japanese Journal of Applied Physics Vol. 52 ( 4 ) page： 04CG08 2013

Temporal Changes of Charge Distribution in High Density Self-aligned Si-based Quantum Dots as Evaluated by AFM/KFM Reviewed

N. Tsunekawa K. Makihara, M. Ikeda and S. Miyazaki

Trans. of MRS-J Vol. 38 ( 3 ) page： 393-396 2013

Characterization of Resistive Switching Behaviors of RF Sputtered Si Oxide ReRAMs with Ti-based Electrodes Reviewed

A. Ohta, M. Fukusima, K. Makihara, H. Murakami, S. Higashi and S. Miyazaki

Jpn. J. Appl. Phys. Vol. 52 page： 11NJ06 2013

Highly-crystallized Ge:H Film Growth from GeH4 VHF-ICP -Crystalline Nucleation Initiated by Ni-nanodots- Reviewed

K. Makihara, J. Gao, K. Sakaike, S. Hayashi, H. Deki, M. Ikeda, S. Higashi and S. Miyazak

Jpn. J. Appl. Phys. Vol. 52 ( 9 ) page： 11NA04 2013

Study on Charge Storage and Optical Response of Hybrid Nanodots Floating Gate MOS Devices for Their Optoelectronic Application Reviewed

S. Miyazaki, M. Ikeda and K. Makihara

ECS Trans Vol. 58 ( 9 ) page： 231-237 2013

Resistive Switching Properties of SiOx/TiO2 Multi-Stack in Ti-electrode MIM Diodes Reviewed

A. Ohta, K. Makihara, M. Fukusima, H. Murakami, S. Higashi and S. Miyazaki

ECS Trans Vol. 58 ( 9 ) page： 293-300 2013

Evaluation of Charge Trapping Properties of Microcrystalline Germanium Thin Films by Kelvin Force Microscopy Reviewed

K. Makihara, H. Deki, M Ikeda and S, Miyazaki

Journal of Non-Crystalline Solids Vol. 358 ( 17 ) page： 2086-2089 2012

Electroluminescence from One-dimensionally Self-Aligned Si-based Quantum Dots with High Areal Dot Density Reviewed

K. Makihara, H. Deki, M Ikeda and S, Miyazaki

Japanese Journal of Applied Physics Vol. 51 ( 4 ) page： 04DG08 2012

Characterization of Resistance-Switching Properties of SiOx Films Using Pt Nanodots Electrodes Reviewed

K. Makihara, M. Fukushima, A. Ohta, M. Ikeda and S. Miyazaki

ECS TRANSACTIONS Vol. 50 ( 9 ) page： 459-464 2012

Study of Electron Transport Characteristics Through Self-Aligned Si-Based Quantum Dots Reviewed

K. Makihara, M. Ikeda and S. Miyazaki

Journal of Applied Physics Vol. 112 page： 104301 2012

Light Induced Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid FG in MOS Structures Reviewed

N. Morisawa, M. Ikeda, S. Nakanishi, A. Kawanami, K. Makihara and S. Miyazaki

Japanese Journal of Applied Physics Vol. 49 page： 04DJ04 2011

Characterization of Electronic Charged States of Impurity Doped Si Quantum Dots Using AFM/Kelvin Probe Technique Reviewed

K. Makihara and S. Miyazaki

Japanese Journal of Applied Physics Vol. 49 ( 2 ) page： 065002 2011

High Density Formation of Ge Quantum Dots on SiO2 Reviewed

K. Makihara, M. Ikeda, A. Ohta, S. Takeuchi, Y. Shimura, S. Zaima and S. Miyazaki

Solid State Electronics Vol. 60 page： 65-69 2011

Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures Reviewed

N. Morisawa, M. Ikeda, K. Makihara and S. Miyazaki

Key Engineering Materials Vol. 470 page： 135-139 2011

Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor Reviewed

M. Muraguchi, Y. Sakurai, Y. Takada, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki, Y. Shigeta, T. Endoh

IEICE TRANSACTIONS on Electronics Vol. 94-C ( 5 ) page： 730-736 2011

The Impact of H2 Anneal on Resistive Switching in Pt/TiO2/Pt Structure Reviewed

G. Wei, Y. Goto, A. Ohta, K. Makihara, H. Murakami, S. Higashi and S. Miyazaki

IEICE TRANSACTIONS on Electronics Vol. 94-C ( 5 ) page： 699-704 2011

Collective Tunneling Model in Charge Trap Type NVM Cell Reviewed

M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi, and T. Endoh

Japanese Journal of Applied Physics Vol. 50 ( 4 ) page： 04DD04 2011

Study on Native Oxidation of Ge (111) and (100) Surfaces Reviewed

S. K. Sahari, H. Murakami, T. Fujioka, T. Bando, A. Ohta, K. Makihara, S. Higashi and S. Miyazaki

Japanese Journal of Applied Physics Vol. 50 ( 4 ) page： 04DA12 2011

Formation of High Density Pt Nanodots on SiO2 Induced by Millisecond Rapid Thermal Annealing using Thermal Plasma Jet for Floating Gate Memory Reviewed

K. Makihara, K. Matsumoto, M. Yamane, T. Okada, N. Morisawa, M. Ikeda, S. Higashi and S. Miyazaki

Japanese Journal of Applied Physics Vol. 50 ( 8 ) page： 08KE06 2011

Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure Reviewed

M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi and T. Endoh

Key Engineering Materials Vol. 470 page： 48-53 2011

Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots Reviewed

Y. Sakurai, J. Iwata, M. Muraguchi, Y. Shigeta, Y. Takada, S. Nomura, T. Endoh, S. Saito, K. Shiraishi, M. Ikeda, K. Makihara and S. Miyazaki

Japanese Journal of Applied Physics Vol. 49 ( 1 ) page： 014001 2010

Formation and Characterization of Hybrid Nanodot Stack Structure for Floating Gate Application

S. Miyazaki, K. Makihara, M. Ikeda

Thin Solid Films Vol. 518 page： S30-S34 2010

Formation of High Density Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Memory Application Reviewed

S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto

Journal of of Materials Science Forum Vol. 638-642 page： 1725-1730 2010

Anomalous temperature dependence of electron tunneling between a two-dimensional electron gas and Si dots Reviewed

Y. Sakurai, S. Nomura, Y. Takada, K. Shiraishi, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki

Physica E Vol. 42 ( 4 ) page： 918–921 2010

Formation Mechanism of Metal nanodots Induced by Remote Plasma Exposure Reviewed

K. Makihara, K. Shimanoe, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki

Journal of Optoelectronics and Advanced Materials Vol. 12 ( 3 ) page： 626-630 2010

Electron Tunneling between Si Quantum dots and Tow Dimensional Electron Gas under Optical Excitation at Low Temperatures Reviewed

Y. Sakurai, Y. Takada, J-I Iwata, K. Shiraishi, S. Nomura, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki

ECS TRANSACTIONS Vol. 28 ( 1 ) page： 369-374 2010

Effect of Chemical Composition of SiOx Films on Rapid Formation of Si Nanocrystals Induced by Thermal Plasma Jet Irradiation Reviewed

T. Okada, S. Higashi, H. Kaku, K. Makihara, H. Furukawa, Y. Hiroshige and S. Miyazaki

Physica Status Solidi C Vol. 7 ( 3-4 ) page： 732-734 2010

Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots Reviewed

K. Makihara, M. Ikeda, A. Kawanami and S. Miyazaki

IEICE TRANSACTIONS on Electronics Vol. 93-C ( 5 ) page： 569-572 2010

Formation of Cobalt and Cobalt-silicide Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasma Reviewed

A. Kawanami, K. Makihara, M. Ikeda and S. Miyazaki

Japanese Journal of Applied Physics Vol. 49 page： 08JA04 2010

Importance of Electronic State of Two-Dimensional Electron Gas for Electron Injection Process in Nano-Electronic Devices Reviewed

M. Muraguchi, T. Endoh, Y. Takada, Y. Sakurai, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki, and Y. Shigeta

Physica E Vol. 43 ( 10 ) page： 2602–2605 2010

Formation of Pseudo-Expitaxial Ge Films on Si(100) by Droplet of Ge Microliquid Reviewed

T. Matsumoto, S. Higashi, K. Makihara, M. Akazawa and Seiichi Miyazaki

ECS TRANSACTIONS Vol. 33 ( 6 ) page： 165-170 2010

Self-Align Formation of Si Quantum Dots Reviewed

K. Makihara, M. Ikeda, H. Deki, A. Ohta and S. Miyazaki

ECS TRANSACTIONS Vol. 33 ( 6 ) page： 661-667 2010

Electroluminescence from Si Quantum Dots/SiO2 Multilayers with Ultrathin Oxide Layers due to Bipolar Injection Reviewed

J. Xu, K. Makihara, H. Deki and S. Miyazaki

Solid State Communications Vol. 149 page： 739-742 2009

Temperature Dependence of Capacitance of Si Quantum Dot Floating Gate MOS Capacitor Reviewed

Y. Sakurai, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara and S.Miyazaki

Journal of Physics: Condensed Matter Vol. 150 page： 022071 2009

Formation of Pd Nanodots Induced by Remote Hydrogen Plasma Treatment and Its Application to Floating Gate MOS Memories Reviewed

K. Shimanoe, K. Makihara, M. Ikeda, R. Matsumoto, S. Higashi and S. Miyazaki

IEICE TRANSACTIONS on Electronics Vol. 92-C ( 5 ) page： 616-619 2009

Formation of Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Application Reviewed

S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto

Solid State Phenomena Vol. 154 page： 95-100 2009

Electronic Charged States of Pt-silicide Nanodots as Evaluated by Using an AFM/Kelvin Probe Technique Reviewed

K. Makihara, K. Shimanoe, M. Ikeda, A. Ohta, S. Higashi and S. Miyazaki

Transaction of MRS-J Vol. 34 ( 2 ) page： 309-312 2009

Charge Storage Characteristics of Hybrid Nanodots Floating Gate Reviewed

S. Miyazaki, K. Makihara and M. Ikeda

ECS TRANSACTIONS Vol. 25 ( 7 ) page： 433-439 2009

Physics of Nano-contact Between Si Quantum Dots and Inversion Layer Reviewed

Y. Sakurai, S. Nomura, Y. Takada, J. Iwata, K. Shiraishi, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara and S. Miyazaki

ECS TRANSACTIONS Vol. 25 ( 7 ) page： 463-469 2009

Surface Potential Changes Induced by Physisorption of Si-tagged Protein A on HF-last Si(100) and Thermally Grown SiO2 Surface Reviewed

S. Mahboob, K. Makihara, A. Ohta, S. Higashi, Y. Hata, A. Kuroda and S. Miyazaki

ECS TRANSACTIONS Vol. 19 ( 22 ) page： 35-43 2009

Self-Assembling Formation of Ninanodots on SiO2 Induced by Remote H2-plasma Treatment and Their Electrical Charging Characteristics Reviewed

K. Makihara, K. Shimanoe, Y. Kawaguchi, M. Ikeda, S. Higashi and S. Miyazaki

Japanese Journal of Applied Physics Vol. 47 ( 4 ) page： 3099-3102 2008

Low Temperature High-rate Growth of Crystalline Ge Films on Quartz and Crystalline Si Substrates from VHF Inductively-Coupled Plasma of GeH4 Reviewed

T. Sakata, K. Makihara, H. Deki, S. Higashi and S. Miyazaki

Thin Solid Films Vol. 517 ( 1 ) page： 216-218 2008

Interface Properties and Effective Work Function of Sb-Predoped Fully Silicided NiSi Gate Reviewed

T. Hosoi, K. Sano, A. Ohta, K. Makihara, H. Kaku, S. Miyazaki and K. Shibahara

Surface and Interface Analysis Vol. 40 page： 1126-1130 2008

Control of Electronic Charged States of Si-Based Quantum Dots for Floating Gate Application Reviewed

S. Miyazaki, K. Makihara and M. Ikeda

Thin Solid Films Vol. 517 ( 1 ) page： 41-44 2008

Impact of impurity Doping into Si Quantum Dots with Ge Core on Their Electrical Charging Characteristics Reviewed

K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki

Thin Solid Films Vol. 517 ( 1 ) page： 306-308 2008

Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO2 Reviewed

K. Makihara, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki

ECS TRANSACTIONS Vol. 16 ( 10 ) page： 255-260 2008

Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO2 Structure as Evaluated by AFM/KFM Reviewed

K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki,

IEICE TRANSACTIONS on Electronics Vol. E91-C ( 5 ) page： 712-715 2008

Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots Reviewed

J. Xu, K. Makihara, H. Deki, Y. Kawaguchi, H. Murakami, S. Higashi and S. Miyazaki

Solid State Phenomena Vol. 121-123 page： 557-560 2007

High Rate Growth of Highly-Crystallized Ge Films on Quartz from VHF Inductively-Coupled Plasma of GeH4 + H2

T. Sakata, K. Makihara, H. Deki, S. Higashi and S. Miyazaki

Materials Science Forum Vol. 561-565 page： 1209-1212 2007

Characterization of chemical bonding features and defect state density in HfSiOxNy/SiO2 gate stack Reviewed

A. Ohta, Y. Munetaka, A. Tsugou, K. Makihara, H. Murakami, S. Higashi, S. Miyazaki, S. Inumiya and Y. Nara

Microelectronic Engineering Vol. 84 page： 2386-2389 2007

Characterization of Electronic Charged States of Si-Based Quantum Dots for Floating Gate Application Reviewed

S. Miyazaki, M. Ikeda and K. Makihara

ECS TRANSACTIONS Vol. 11 ( 6 ) page： 233-243 2007

Characterization of Electronic Charged States of Nickel Silicide Nanodots Using AFM/Kelvin Probe Technique Reviewed

R. Nishihara, K. Makihara, Y. Kawaguchi, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki

Materials Science Forum Vol. 561-565 page： 1213-1216 2007

Characterization of Electronic Charged States of P-doped Si Quantum Dots Using AFM/Kelvin Probe Reviewed

K. Makihara, J. Xu, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki

Thin Solid Films Vol. 508 ( 1-2 ) page： 186-189 2006

Growth of Crystallized Ge Films from VHF-Inductively Coupled Plasma of H2-Diluted GeH4 Reviewed

T. Sakata, K. Makihara, S. Higashi and S. Miyazaki

Thin Solid Films Vol. 515 ( 12 ) page： 4971-4974 2006

Study of Charged States of Si Quantum Dots with Ge Core Reviewed

K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki

ECS TRANSACTIONS Vol. 3 ( 7 ) page： 257-262 2006

Characterization of Electronic Charged States of Si-Based Quantum Dots and Their Application to Floating Gate Memories Reviewed

S. Miyazaki, M. Ikeda and K. Makihara

ECS TRANSACTIONS Vol. 2 ( 1 ) page： 157-164 2006

Fabrication of Multiply-Stacked Si Quantum Dots for Floating Gate MOS Devices Reviewed

K. Makihara, M. Ikeda, T. Nagai, H. Murakami, S. Higashi and S. Miyazaki

Transaction of MRS-J Vol. 31 ( 1 ) page： 133-136 2006

Decay Characteristics of Electronic Charged States of Si Quantum Dots as Evaluated by an AFM/Kelvin Probe Technique Reviewed

J. Nishitani, K. Makihara, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki

Thin Solid Films Vol. 508 ( 1-2 ) page： 190-194 2006

Control of the Nucleation Density of Si Quantum Dots by Remote Hydrogen Plasma Treatment Reviewed

K. Makihara, H. Deki, H. Murakami, S. Higashi and S. Miyazaki

Applied Surface Science Vol. 244 ( 1-4 ) page： 75-78 2005

Formation of Microcrystalline Germanium (mc-Ge:H) Films From Inductively-Coupled Plasma CVD Reviewed

Y. Okamoto, K. Makihara, H. Murakami, S. Higashi and S. Miyazaki

Applied Surface Science Vol. 244 ( 1-4 ) page： 12-15 2005

Characterization of Germanium Nanocrystallites Grown on SiO2 by a Conductive AFM Probe Technique Reviewed

K. Makihara, Y. Okamoto, H. Murakami, S. Higashi and S. Miyazaki

IEICE TRANSACTIONS on Electronics Vol. E88-C ( 4 ) page： 705-708 2005

Electrical Characterization of Ge Microcrystallites by Atomic Force Microscopy Using a Conducting Probe Reviewed

K. Makihara, Y. Okamoto, H. Nakagawa, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki

Thin Solid Films Vol. 457 page： 103-108 2004

Structural Defects effect on Ferromagnetism of Layered Oxysulfide (La1-xCaxO)Cu1-xNixS Reviewed

K. Takase, T. Shimizu, K. Makihara, Y. Takahashi, Y. Takano, K. Sekizawa, Y. Kuroiwa, S. Aoyagi, and A. Utsumi

Physica B Vol. 329-333 ( 2 ) page： 961-962 2003

Electrical Resistivity and Photoemission Spectra of Layered Oxysulfide (La1-xCaxO)Cu1-xNixS Reviewed

K. Takase, T. Shimizu, K. Makihara, H. Sato, H. Negishi, Y. Takahashi, Y. Takano, K. Sekizawa, Y. Kuroiwa, S. Aoyagi, A. Utsumi, A. Wada, A. Ino, H. Namatame, M. Taniguchi

Physica B Vol. 329-333 ( 2 ) page： 898-899 2003

Electrical Resistivity and Photoluminescence Spectrum of Layered Oxysulfide (LaO)CuS Reviewed

K. Takase, M. Koyano, T. Shimizu, K. Makihara, Y. Takahashi, Y. Takano, and K. Sekizawa

Solid State Communications Vol. 123 page： 531-534 2002

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