Papers - Katsunori Makihara
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Interface properties of SiO2/GaN structures formed by chemical vapor deposition with remote oxygen plasma mixed with Ar or He
Nguyen Xuan Truyen, Taoka Noriyuki, Ohta Akio, Makihara Katsunori, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Shimizu Mitsuaki, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 6 ) 2018.6
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Growth of two-dimensional Ge crystal by annealing of heteroepitaxial Ag/Ge(111) under N-2 ambient
Ito Koichi, Ohta Akio, Kurosawa Masashi, Araidai Masaaki, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 6 ) 2018.6
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Evaluation of resistive switching properties of Si-rich oxide embedded with Ti nanodots by applying constant voltage and current
Ohta Akio, Kato Yusuke, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 6 ) 2018.6
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Energy band structure and electrical properties of Ga-oxide/GaN interface formed by remote oxygen plasma
Yamamoto Taishi, Taoka Noriyuki, Ohta Akio, Nguyen Xuan Truyen, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Makihara Katsunori, Nakatsuka Osamu, Shimizu Mitsuaki, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 6 ) 2018.6
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Direct evaluation of electrical dipole moment and oxygen density ratio at high-k dielectrics/SiO2 interface by X-ray photoelectron spectroscopy analysis
Fujimura Nobuyuki, Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 4 ) 2018.4
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Segregated SiGe ultrathin layer formation and surface planarization on epitaxial Ag(111) by annealing of Ag/SiGe(111) with different Ge/(Si plus Ge) compositions
Ito Koichi, Ohta Akio, Kurosawa Masashi, Araidai Masaaki, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 4 ) 2018.4
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High thermal stability of abrupt SiO2/GaN interface with low interface state density
Nguyen Xuan Truyen, Taoka Noriyuki, Ohta Akio, Makihara Katsunori, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Shimizu Mitsuaki, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 4 ) 2018.4
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Characterization of remote O-2-plasma-enhanced CVD SiO2/GaN(0001) structure using photoemission measurements
Nguyen Xuan Truyen, Ohta Akio, Makihara Katsunori, Ikeda Mitsuhisa, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 1 ) 2018.1
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Formation of Mn-germanide nanodots on ultrathin SiO2 induced by remote hydrogen plasma
Wen Yinghui, Makihara Katsunori, Ohta Akio, Ikeda Mitsuhisa, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 1 ) 2018.1
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Electroluminescence of superatom-like Ge-core/Si-shell quantum dots by alternate field-effect-induced carrier injection
Makihara Katsunori, Ikeda Mitsuhisa, Fujimura Nobuyuki, Yamada Kentaro, Ohta Akio, Miyazaki Seiichi
APPLIED PHYSICS EXPRESS Vol. 11 ( 1 ) 2018.1
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Electroluminescence of superatom-like Ge-core/Si-shell quantum dots by alternate field-effect-induced carrier injection Reviewed
K. Makihara, M. Ikeda, N. Fujimura, K. Yamada, A. Ohta, and S. Miyazaki
Applied Physics Express Vol. 11 page： 011305 (4pages) 2018
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Segregated SiGe ultrathin layer formation and surface planarization on epitaxial Ag(111) by annealing of Ag/SiGe(111) with different Ge/(Si+Ge) compositions Reviewed
K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki
Japanese Jounal of Applied Physics Vol. 57 page： 04FJ05 2018
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Characterization of remote O2-plasma-enhanced CVD SiO2/GaN(0001) structure using photoemission measurements Reviewed
N. X. Truyen, A. Ohta, K. Makihara, M. Ikeda, and S. Miyazaki
Japanese Jounal of Applied Physics Vol. 57 page： 01AD02 2018
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Carrier Conduction in SiO2/GaN Structure with Abrupt Interface
Nguyen Xuan Truyen, Taoka Noriyuki, Ohta Akio, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Makihara Katsunori, Shimizu Mitsuaki, Miyazaki Seiichi
2018 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA) page： . 2018
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High Density Formation and Magnetoelectronic Transport Properties of Fe3Si Nanodots Reviewed
Hai Zhang, Katsunori Makihara, Mitsuhisa Ikeda, Akio Ohta, and Seiichi Miyazaki
ECS Trans. Vol. 86 ( 7 ) page： 131-138 2018
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Impact of phosphorus doping to multiple-stacked Si quantum dots on electron emission properties
Takeuchi Daichi, Makihara Katsunori, Ohta Akio, Ikeda Mitsuhisa, Miyazaki Seiichi
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 70 page： 183-187 2017.11
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Thermal Stability of SiO<sub>2</sub>/GaN Interface Formed by Remote Plasma CVD
NGUYEN TRUYEN XUAN, Taoka Noriyuki, Ohta Akio, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Makihara Katsunori, Shimizu Mitsuaki, Miyazaki Seiichi
JSAP Annual Meetings Extended Abstracts Vol. 2017.2 ( 0 ) page： 3024 - 3024 2017.8
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Magnetoelectronic transport of double stack FePt nanodots
Makihara Katsunori, Kawase Taiga, Ohta Akio, Ikeda Mitsuhisa, Miyazaki Seiichi
APPLIED PHYSICS LETTERS Vol. 111 ( 5 ) 2017.7
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Evaluation of energy distribution of filled defects of Si oxide thin films from total photoelectron yield spectroscopy
Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi
MICROELECTRONIC ENGINEERING Vol. 178 page： 85-88 2017.6
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Potential changes and chemical bonding features for Si-MOS structure as evaluated from HAXPES analysis
Ohta Akio, Murakami Hideki, Ikeda Mitsuhisa, Makihara Katsunori, Ikenaga Eiji, Miyazaki Seiichi
MICROELECTRONIC ENGINEERING Vol. 178 page： 80-84 2017.6