Papers - Katsunori Makihara
-
Processing and Characterization of Si/Ge Quantum Dots Reviewed
S. Miyazaki, K. Makihara, A. Ohta, and M. Ikeda
Technical Digest of Int. Electron Devices Meeting page： 826-830 2016
-
High-density formation of Ta nanodot induced by remote hydrogen plasma Reviewed
Y. Wang, D. Takeuchi, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki
Jpn. J. of Appl. Phys. Vol. 56 page： 01AE01/4pages 2016
-
Impact of Embedded Mn Nanodots on Resistive Switching Characteristics of Si-rich Oxides as Measured in Ni-Electrodes MIM Diodes Reviewed
T. Arai, A. Ohta, K. Makihara, and S. Miyazaki
Jpn. J. of Appl. Phys. Vol. 55 page： 06GH07/5pages 2016
-
Evaluation of Valence Band Top and Electron Affinity of SiO2 and Si-based Semiconductors Using XPS Reviewed
N. Fujimura, A. Ohta, K. Makihara, and S. Miyazaki
Jpn. J. of Appl. Phys. Vol. 55 page： 08PC06/5pages 2016
-
Effects of remote hydrogen plasma on chemical bonding features and electronic states of 4H-SiC(0001) surface Reviewed
N. X. Truyen, A. Ohta, K. Makihara, M. Ikeda and S. Miyazaki
Jpn. J. of Appl. Phys. Vol. 56 page： 01AF01/5pages 2016
-
High Density Formation of FePt Alloy Nanodots Induced by Remote Hydrogen Plasma and Characterization of their Magnetic Properties Reviewed
R. Fukuoka, K. Makihara, H. Zhang, A. Ohta, T. Kato, S. Iwata, M. Ikeda and S. Miyazaki
Trans. Mat. Res. Sco. Japan Vol. 40 ( 4 ) page： 347-350 2015
-
Electronic defect states in thermally-grown SiO2/4H-SiC structure measured by total photoelectron yield spectroscopy Reviewed
A. Ohta, K. Makihara and S. Miyazaki
Microelectronic Engineering Vol. 147 page： 264-268 2015
-
Progress in determination method for ultrathin Si-based oxide bandgaps from analysis of energy loss signals for photoelectrons Reviewed
A. Ohta, H. Murakami, K. Makihara and S. Miyazaki
Jpn, J. Appl. Phys. Vol. 54 page： 06FH08 2015
-
Increase in the work function of W/WO3 by helium plasma irradiation Reviewed
S. Kajita, A. Ohta, T. Ishida, K. Makihara, T. Yoshida and N. Ohno
Jpn, J. Appl. Phys. Vol. 54 page： 126201 2015
-
Resistive Switching Characteristics of Si-Rich Oxides with Embedding Ti Nanodots Reviewed
Y. Kato, T. Arai, A. Ohta, K. Makihara and S. Miyazaki
ECS Trans. Vol. 69 ( 10 ) page： 291-298. 2015
-
Photoemission Study on Chemical Bonding Features and Electronic Defect States of Thermally-Grown SiO2/4H-SiC Structure Reviewed
H. Watanabe, A. Ohta, K. Makihara and S. Miyazaki
ECS Trans. Vol. 69 ( 10 ) page： 179-186 2015
-
Resistance-Switching Characteristics of Si-rich Oxide Evaluated by Using Ni Nanodots as Electrodes in Conductive AFM Measurements Reviewed
A. Ohta, C. Liu, T. Arai, D. Takeuchi, H. Zhang, K. Makihara, and S. Miyazaki
IEICE TRANSACTIONS on Electronics Vol. E98-C page： 406-410 2015
-
Selective Growth of Self-Assembling Si and SiGe Quantum Dots Reviewed
K. Makihara,M. Ikeda and S. Miyazaki
IEICE Trans. on Electronics Vol. E97-C ( 5 ) page： 393-396 2014
-
High-Sensitive Detection of Electronic Emission through Si-Nanocrystals/Si-Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy Reviewed
D. Takeuchi,K. Makihara,M. Ikeda,S. Miyazaki,H. Kaki and T. Hayashi
IEICE Trans. on Electronics Vol. E97-C ( 5 ) page： 397-400 2014
-
Application of remote hydrogen plasma to selective processing for Ge-based devices: Crystallization, etching, and metallization Reviewed
K. Makihara, M. Ikeda, T. Okada, and S. Miyazaki
Jpn. J. Appl. Phys. Vol. 53 page： 11RA02 2014
-
Effect of electric field concentration using nanopeak structures on the current-voltage characteristics of resistive switching memory Reviewed
S. Otsuka, T. Shimizu, S. Shingubara, K. Makihara, S. Miyazaki, A. Yamasaki, Y. Tanimoto and K. Takase
AIP Advances Vol. 4 page： 087110 (7 pages) 2014
-
Characterization of Chemical Bonding Features and Interfacial Reactions in Ge-MIS Structure with HfO2/TaGexOy Dielectric Stack Reviewed
A. Ohta, H. Murakami, K. Hashimoto, K. Makihara and S. Miyazaki
ECS Trans. Vol. 64 ( 6 ) page： 241-248 2014
-
Characterization of Electron Emission from High Density Self-Aligned Si-Based Quantum Dots by Conducting-Probe Atomic Force Microscopy Reviewed
D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
ECS Trans. Vol. 64 ( 6 ) page： 923-928 2014
-
Photoluminescence Study of Si Quantum Dots with Ge Core Reviewed
K. Makihara, K. Kondo, M. Ikeda, A. Ohta and S. Miyazaki
ECS Trans. Vol. 64 ( 6 ) page： 365-370 2014
-
High Density Formation of Iron Nanodots on SiO2 Induced by Remote Hydrogen Plasma Reviewed
H. Zhang, R. Fukuoka, Y. Kabeya, K. Makihara and S. Miyazaki
Advanced Materials Research Vol. 750-752 page： 1011-1015 2013