研究者詳細 - 豊田　浩孝

論文 - 豊田　浩孝

分割表示 156 件中 1 - 20 件目／全件表示 >>

*Fine Structure of O Kinetic Energy Distribution in RF Plasma and Its Formation Mechanism 査読有り

H.Toyoda, K. Goto, T. Ishijima, T. Morita, N. Ohshima, K. Kinoshita

Applied Physics Express 2 巻 ( 12 ) 頁： 126001-(1-3) 2009年11月

Design of Large-Area Surface Wave Plasma Excited by Slotted Waveguide Antennas with Novel Power Divider 査読有り

Tatsuo Ishijima, Hirotaka Toyoda, Yudai Takanishi, and Hideo Sugai

Jpn. J. Appl. Phys. 50 巻頁： 036002 2011年3月

*Generation processes of super-high-energy atoms and ions in magnetron sputtering plasma 査読有り

Y. Takagi, Y. Sakashita, H. Toyoda, and H. Sugai

Vacuum 80 巻 ( 6 ) 頁： 581-587 2006年3月

*Evidence of Radical-free Etching of SiO₂ by Fluorocarbon Molecules under Ion Bombardment 査読有り

N. Takada, H. Toyoda and H. Sugai

Transacitons of the Materials Research Society of Japan 30 巻 ( 1 ) 頁： 319-322 2005年

*Suppression of Oxygen Impurity Incorporation into Silicon Films Prepared from Surface-Wave Excited H₂/SiH₄ Plasma 査読有り

S. Somiya, H. Toyoda, Y. Hotta and H. Sugai

Jpn. J. Appl. Phys. 43 巻 ( 11A ) 頁： 7696-7700 2004年

Measurement of energy-resolved ion angular distribution in a dual-frequency capacitively coupled argon plasma Open Access

Kim D., Kawamura S., Naito M., Iino D., Fukumizu H., Kurihara K., Suzuki H., Toyoda H.

Japanese Journal of Applied Physics Part 1 Regular Papers and Short Notes and Review Papers 64 巻 ( 5 ) 頁： 05SP15-1 - 05SP15-7 2025年5月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics Part 1 Regular Papers and Short Notes and Review Papers

An energy-resolved angular distribution measurement of ions impinging on a biased radiofrequency (RF) electrode was performed in a dual-frequency capacitively coupled plasma. The ion angular distribution (IAD) was measured using a microchannel plate (MCP) in a drift chamber directly connected to the RF electrode. Using deflector plates with pulse-modulated voltage, IADs with various incident energies for Ar were successfully observed using a time-of-flight technique. Images measured using the MCP originated from the spatially overlapped IADs of various incident energies. Through image reconstruction assisted by a gradient descent method, the images were separated into energy-resolved IADs. The angular widths (AW) of the Ar ions were evaluated as a function of the incident energy, showing a monotonic decrease in AW as the energy increased. From the energy dependence of the AW, the Ar ion temperature was evaluated as 0.044 eV. The result demonstrated the validity of the energy-resolved IAD measurement using this method.

DOI： 10.35848/1347-4065/adce84

Open Access

Scopus

Angular distribution measurement of high-energy ions and neutrals impinging on an RF electrode in a dual-frequency capacitively-coupled Ar plasma 査読有り

Kawamura, S; Kim, D; Ichikawa, K; Suzuki, H; Iino, D; Fukumizu, H; Kurihara, K; Toyoda, H

PLASMA SOURCES SCIENCE & TECHNOLOGY 34 巻 ( 5 ) 頁： 055006-1 - 055006-9 2025年5月

Dry Process 2023 Open Access

Koga K., Takeda K., Toyoda H., Ishikawa K., Ichiki T., Nunomura S., Kurihara K., Kuboi N., Ohta T., Takenaka K.

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 63 巻 ( 8 ) 2024年8月

Influence of bias voltage on the Ar/CH2F2/O2 plasma etching of Si3N4 films 査読有り

Kuboi, S; Kataoka, J; Iino, D; Kurihara, K; Toyoda, H; Fukumizu, H

JAPANESE JOURNAL OF APPLIED PHYSICS 63 巻 ( 8 ) 2024年8月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

The etching mechanism of silicon nitride (Si3N4) films depending on peak-to-peak bias voltage ( V pp ) in an Ar/CH2F2/O2 gas-mixture plasmas for high-aspect-ratio etching process was investigated. It was observed that the Si3N4 film etch rate initially decreased with an increase in the V pp up to 3630 V, but then increased beyond this threshold. This unusual etching behavior can be attributed to the formation of a modified layer on the surface of the Si3N4 film. The characteristics of the modified layer, such as thickness and atomic composition, were found to be strongly influenced by the ion energy and gas chemistry of the process conditions.

DOI： 10.35848/1347-4065/ad6d20

Web of Science

Scopus

Evaluation of the spatial structure of multiline emission in a capacitively coupled plasma using tomographic reconstruction 査読有り

Kyuzo, M; Harada, K; Izumi, R; Suzuki, H; Toyoda, H

JAPANESE JOURNAL OF APPLIED PHYSICS 63 巻 ( 5 ) 2024年5月

担当区分：最終著者記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

By imaging a capacitively coupled plasma from multiple directions using telecentric lens cameras and optical bandpass filters, the spatial structure of emission at specific wavelengths was reconstructed using the Tikhonov-Phillips regularization method. Camera parameters, crucial for relating three-dimensional structures to two-dimensional images, were evaluated experimentally to avoid a complex analytical approach. Assuming an axisymmetric emission profile, 750.4 nm Ar and 585.2 nm Ne emissions from Ar/Ne mixture plasma were reconstructed. The pressure dependence of the reconstructed Ar profile showed a similar trend to that of the two-dimensional emission images. The spatial structure of the emission intensity ratio of Ne to Ar from the reconstructed Ar and Ne profiles agreed well with a spatial distribution of electron temperatures measured with a Langmuir probe.

DOI： 10.35848/1347-4065/ad46b0

Web of Science

Scopus

Time-varying mechanism of ion composition in a pulse-modulated Ar/C4F8/O2 dual-frequency capacitively coupled plasma 査読有り

Kuboi, S; Kato, H; Akatsuka, Y; Suzuki, H; Toyoda, H

JAPANESE JOURNAL OF APPLIED PHYSICS 63 巻 ( 1 ) 頁： 016001 2024年1月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

The time-varying mechanism of the positive-ion composition in a pulse-modulated Ar/C4F8/O2 dual-frequency capacitively coupled plasma was investigated in detail using a quadrupole mass spectrometer equipped with an electrostatic energy analyzer. Time-resolved measurements of the ion composition with respect to the pulse-off period ( T off ) revealed that the electron temperature ( T e ) just after turning on the pulse is an important factor in determining the ratio of the ionization rates of the Ar+ and Cx Fy + ions. The time-varying phenomenon of the ion composition was also investigated through a numerical analysis based on the particle balance model, considering the production and loss rates of ions, ion-ion recombination processes, and ion-molecule reactions. When the VHF power ( P VHF ) was increased, a decrease in the ambipolar diffusion loss time constants of the ions ( τ loss i ) was observed, and the change in electronegativity was pointed out as the cause of this phenomenon.

DOI： 10.35848/1347-4065/ad121f

Web of Science

Scopus

Mass spectroscopic measurement of time-varying ion composition in a pulse-modulated Ar/C4F8/O2 dual-frequency capacitively coupled plasma 国際誌

Kuboi, S; Kato, H; Seki, Y; Suzuki, H; Toyoda, H

JAPANESE JOURNAL OF APPLIED PHYSICS 62 巻 ( SI ) 頁： SI1003 2023年7月

Polyvinyl alcohol-potassium iodide gel probe to monitor the distribution of reactive species generation around atmospheric-pressure plasma jet

Tran, TN; Hu, M; Ogasawara, T; Iwata, Y; Suzuki, H; Sakamoto, J; Akiyoshi, M; Toyoda, H; Matsuura, H

PLASMA SCIENCE & TECHNOLOGY 25 巻 ( 3 ) 2023年3月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Plasma Science and Technology

This study proposes polyvinyl alcohol-potassium iodide (PVA-KI) as a novel gel chemical probe. The probe uses the reactions among PVA, KI, water, borax, and oxidative species to visualize the distribution of reactive species. This method provides information regarding the distribution of reactive species by coloration on the gel surface. The effects of the surrounding gas phase on the distribution and diffusion of the reactive species are also investigated using the PVA-KI gel probe. Further, the relationship between the irradiation distance and reactive species diffusion is determined on the surface of the PVA-KI probe with and without plastic shielding. Adjusting the irradiation distance appropriately leads to an increase in the modified area as detected by the PVA-KI gel probe analysis. The relative concentration distributions of the reactive species are also obtained from visualized color distributions measured using a colorimeter. Furthermore, reactive species generation by long-scale line plasma is confirmed by the color reaction on the PVA-KI gel surface, with a greater area being covered by an atmospheric-pressure pulsed microwave line plasma source.

DOI： 10.1088/2058-6272/ac9891

Web of Science

Scopus

Influence of small ground surface on plasma property in an inductively-coupled plasma with floating liner 国際誌

Kyuzo, M; Chiba, Y; Suzuki, H; Toyoda, H

JAPANESE JOURNAL OF APPLIED PHYSICS 62 巻 ( SA ) 頁： SA1008-1 - SA1008-7 2023年1月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

Currently, the components of semiconductor processing chamber are coated with oxides to avoid metal contamination. As a result, electrical ground is hidden from the plasma. In this study, we experimentally investigate the effect of small ground surfaces in an inductively-coupled plasma (ICP) generated in an electrically floating liner. Peak-to-peak and DC voltages at a biasing stage and a floating liner are measured as a function of stage peak-to-peak voltage for various ICP powers and the ground surface areas. The results show that the stage and liner voltages vary with changing ground surface area due to a change in sheath thickness. The analytical plasma potentials, calculated from the experimental values are compared with the simulation results, show good agreement. It is suggested that under low biased voltage and high ICP power conditions, such as in the atomic layer etching process, the small ground surface affects the potential structure in the chamber.

DOI： 10.35848/1347-4065/ac7e19

Web of Science

Scopus

その他リンク： https://iopscience.iop.org/article/10.35848/1347-4065/ac7e19

Experimental study on boron distribution and transport at plasma-facing components during impurity powder dropping in the Large Helical Device 査読有り Open Access

Kawate T., Ashikawa N., Goto M., Oishi T., Kawamoto Y., Toyoda H., Shoji M., Kawamura G., Masuzaki S., Nespoli F., Gilson E. P., Lunsford R., Suzuki C., Nagy A., Gates D.

NUCLEAR FUSION 62 巻 ( 12 ) 頁： 126052-1 - 126052-9 2022年12月

Bubbling phenomenon of liquidized Sn-Bi-Li-Er alloy under hydrogen plasma exposure 査読有り

Tamura Kota, Miyazawa Junichi, Masuzaki Suguru, Tokitani Masayuki, Hamaji Yukinori, Toyoda Hirotaka

JAPANESE JOURNAL OF APPLIED PHYSICS 61 巻 ( 10 ) 頁： 106005 2022年10月

Dry Process

Japanese Journal of Applied Physics 61 巻 ( SI ) 2022年7月

High-speed hydrophilic and ashing treatments of polyimide using Ar/O-2 atmospheric-pressure microwave line plasma 査読有り

Japanese Journal of Applied Physics 61 巻 ( SI ) 頁： 1008-1 - 1008-5 2022年7月

Enhancement of the ion flux to the substrate through high-voltage biasing in an electron cyclotron resonance plasma and its application to high-speed deposition of conductive carbon film 査読有り

Bae Hansin, Hamaguchi Ikumi, Sasai Kensuke, Suzuki Haruka, Toyoda Hirotaka

JAPANESE JOURNAL OF APPLIED PHYSICS 60 巻 ( 12 ) 2021年12月

担当区分：最終著者,　責任著者記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

A method for enhancing ion flux to the substrate via high-voltage pulse biasing is investigated in an electron cyclotron resonance plasma. When high-voltage pulse biases above 500 V are applied to the stage, an increase in the stage current is observed, especially in the case of diverging magnetic field configurations in front of the bias stage. The growth and decay time constants of the plasma density and emission intensity are evaluated using a time-resolved Langmuir probe and emission spectroscopy while the pulse is on, and the enhancement of the ionization rate during the bias application is estimated using the zero-dimensional global model. The estimated density enhancement from the model is in good agreement with the measured one. From the numerical simulation of secondary electron trajectory, it is concluded that the electron confinement from the magnetic field is the key factor in plasma density enhancement during stage biasing. Using the high-density plasma produced by the bias voltage, conductive carbon is deposited at a high deposition rate of ∼4 nm s-1.

DOI： 10.35848/1347-4065/ac32b6

Web of Science

Scopus

Angular distribution measurement of high-energy argon neutral and ion in a 13.56 MHz capacitively-coupled plasma 査読有り

Keita Ichikawa, Manh Hung CHU, Makoto Moriyama, Naoya Nakahara, Haruka Suzuki, Daiki Iino, Hiroyuki Fukumizu, Kazuaki KURIHARA and Hirotaka TOYODA

Applied Physics Express 14 巻 ( 126001 ) 頁： 126001-1 - 126001-5 2021年11月

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