Faculty Profiles - SAKASHITA, Mitsuo

Papers - SAKASHITA, Mitsuo

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電流検出型原子間力顕微鏡を用いたLa2O3-Al2O3複合膜の局所リーク電流評価 Reviewed

世古明義, 佐合寿文, 藤塚良太, 坂下満男, 酒井朗, 小川正毅, 財満鎭明

信学技報 Vol. 104 page： 35 2005

Fabrication and Evaluation of Floating Gate Memories with Surface-Nitrided Si Nanocrystals Reviewed

S. Naito, T. Ueyama, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima

Jpn. J. Appl. Phys. Vol. 44 page： 5687-5691 2005

Pulsed Laser Deposition and Analysis for Structural and Electrical Properties of HfO2-TiO2 Composite Films Reviewed

K. Honda, A. Sakai, M. Sakashita, H. Ikeda, S. Zaima, and Y. Yasuda

Jpn. J. Appl. Phys. Vol. 43 page： 1571-1576 2004

Praseodymium silicate formed by postdeposition high-temperature annealing Reviewed

A. Sakai, S. Sakashita, M. Sakashita, Y. Yasuda, S. Zaima, and S. Miyazaki

Appl. Phys. Lett. Vol. 85 page： 5322-5324 2004

Language：English Publishing type：Research paper (scientific journal)

Pr silicate has been synthesized by molecular-beam deposition of Pr2O3 layers on Si(111) substrates and subsequent high-temperature postdeposition annealing at 1000 °C. This thermal treatment drastically changes the film texture from the crystalline Pr2O3 epitaxially grown on Si, into Pr silicate with completely amorphized structures, resulting from intermixing of Si from the substrate. A typical dielectric constant and a leakage current density of Pr silicate grown under an optimal condition were, respectively, 19.7 and 3×10–9 A cm–2 at +1 V relative to the flatband voltage for an equivalent oxide thickness of 1.9 nm. Using x-ray photoelectron spectroscopy, a valence-band offset at the Pr-silicate/Si(111) interface of 2.75 eV and a band gap of 6.50 eV were obtained. The large band gap and the highly symmetric band alignment account for the observed low leakage current density.

HfO2 Film Formation Combined with Radical Nitridation and Its Electrical Characteristic Reviewed

R. Takahashi, M. Sakashita, A. Sakai, S. Zaima, and Y. Yasuda

Jpn. J. Appl. Phys. Vol. 43 page： 7821-7825 2004

Growth of silicon nanocrystal dots with high number density by ultra-high vacuum chemical vapor deposition Reviewed

S. Naito, M. Satake, H. Kondo, M. Sakashita, A. Sakai, S. Zaima, and Y. Yasuda

Jpn. J. Appl. Phys. Vol. 43 page： 3779-3783 2004

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Papers - SAKASHITA, Mitsuo