Papers - SAKASHITA, Mitsuo
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Shibayama, S; Ishimoto, S; Kato, Y; Sakashita, M; Kurosawa, M; Nakatsuka, O
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY Vol. 13 page： 79 - 85 2025
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Shibayama, S; Shibata, K; Sakashita, M; Kurosawa, M; Nakatsuka, O
APPLIED PHYSICS EXPRESS Vol. 17 ( 11 ) 2024.11
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Shibayama, S; Takagi, K; Sakashita, M; Kurosawa, M; Nakatsuka, O
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 176 2024.6
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Hiraide, T; Shibayama, S; Kurosawa, M; Sakashita, M; Nakatsuka, O
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 63 ( 4 ) 2024.4
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Emergence of ferroelectricity in ZrO2 thin films on TiN/Si featuring high temperature sputtering method
Nagano Jotaro, Ikeguchi Shota, Doi Takuma, Sakashita Mitsuo, Nakatsuka Osamu, Shibayama Shigehisa
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 163 2023.8
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Self-organized Ge1-x Sn (x) quantum dots formed on insulators and their room temperature photoluminescence
Hashimoto Kaoru, Shibayama Shigehisa, Asaka Koji, Sakashita Mitsuo, Kurosawa Masashi, Nakatsuka Osamu
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 62 ( 7 ) 2023.7
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Lattice-matched growth of high-Sn-content (x similar to 0.1) Si1-x Sn x layers on Si1-y Ge y buffers using molecular beam epitaxy
Fujimoto Kazuaki, Kurosawa Masashi, Shibayama Shigehisa, Sakashita Mitsuo, Nakatsuka Osamu
APPLIED PHYSICS EXPRESS Vol. 16 ( 4 ) 2023.4
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Heteroepitaxial growth of CaGe2 films on high-resistivity Si(111) substrates and its application for germanane synthesizing Reviewed
Kazuya Okada, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, and Masashi Kurosawa
Mater. Sci. Semicond. Proc. Vol. 161 page： 107462 2023.3
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Ge1−xSnx layers with x~0.25 on InP(001) substrate grown by low-temperature molecular beam epitaxy reaching 70 °C and in-situ Sb doping Reviewed
Shigehisa Shibayama, Komei Takagi, Mitsuo Sakashita, Masashi Kurosawa, and Osamu Nakatsuka
Mater. Sci. Semicond. Proc. Vol. 176 page： 108302 2023
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Enhancement of channel mobility in 4H-SiC trench MOSFET by inducing stress at SiO2/SiC gate interface Reviewed
Kagoshima E., Takeuchi W., Kutsuki K., Sakashita M., Fujiwara H., Nakatsuka O.
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 61 ( SC ) 2022.5
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Visualization of local strain in 4H-SiC trench metal-oxide-semiconductor field-effect transistor using synchrotron nanobeam X-ray Reviewed
W. Takeuchi, E. Kagoshima, K. Sumitani, Y. Imai, S. Shibayama, M. Sakashita, S. Kimura, H. Tomita, T. Nishiwaki, H. Fujiwara, and O. Nakatsuka
Japanese Journal of Applied Physics Vol. 61 page： SC1072 2022.5
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Impact of oxide/4H-SiC interface state density on field-effect mobility of counter-doped n-channel 4H-SiC MOSFETs Invited Reviewed
T. Doi, S. Shibayama, M. Sakashita, N. Taoka, M. Shimizu, and O. Nakatsuka
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 61 ( 2 ) page： 021007 2022.2
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Photoluminescence properties of heavily Sb doped Ge1-x Sn (x) and heterostructure design favorable for n(+)-Ge1-x Sn (x) active layer
Zhang Shiyu, Fukuda Masahiro, Jeon Jihee, Sakashita Mitsuo, Shibayama Shigehisa, Nakatsuka Osamu
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 61 ( SA ) 2022.1
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Low-temperature formation of Mg/n-type 4H-SiC ohmic contacts with atomically flat interface by lowering of Schottky barrier height
Doi Takuma, Shibayama Shigehisa, Sakashita Mitsuo, Kojima Kazutoshi, Shimizu Mitsuaki, Nakatsuka Osamu
APPLIED PHYSICS EXPRESS Vol. 15 ( 1 ) 2022.1
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Interface structures and electrical properties of micro-fabricated epitaxial Hf-digermanide/n-Ge(001) contacts Invited Reviewed
K. Kasahara, K. Senga, M. Sakashita, S. Shibayama, and O. Nakatsuka
IEEE Journal of the Electron Devices Society 2021.12
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Lowering of the Schottky barrier height of metal/n-type 4H-SiC contacts using low-work-function metals with thin insulator insertion
Doi Takuma, Shibayama Shigehisa, Sakashita Mitsuo, Shimizu Mitsuaki, Nakatsuka Osamu
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 60 ( 7 ) 2021.7
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Impact of Wet Annealing on Ferroelectric Phase Formation and Phase Transition of HfO2-ZrO2 System
Shibayama Shigehisa, Nagano Jotaro, Asaka Koji, Sakashita Mitsuo, Nakatsuka Osamu
ACS APPLIED ELECTRONIC MATERIALS Vol. 3 ( 5 ) page： 2203 - 2211 2021.5
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Formation and Characterization of Ge1–x–ySixSny/Ge Heterojunction Structures for Photovoltaic Cell Application Invited Reviewed
O. Nakatsuka, S. Asaba, M. Kurosawa, M. Sakashita, N. Taoka, and S. Zaima
ECS Trans. Vol. 102 ( 4 ) page： 3 - 9 2021.4
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Improved interface uniformity of epitaxial HfGe2/Ge(001) contact by microfabrication and its electron conduction property
Kasahara Kentaro, Senga Kazuki, Sakashita Mitsuo, Shibayama Shigehisa, Nakatsuka Osamu
TWENTIETH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT 2021) page： 58 - 60 2021
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Formation of ultra-thin Ge1-xSnx/Ge1-x-ySixSny quantum heterostructures and their electrical properties for realizing resonant tunneling diode Reviewed
Suwito Galih Ramadana, Fukuda Masahiro, Suprayoga Edi, Ohtsuka Masahiro, Hasdeo Eddwi Hesky, Nugraha Ahmad Ridwan Tresna, Sakashita Mitsuo, Shibayama Shigehisa, Nakatsuka Osamu
APPLIED PHYSICS LETTERS Vol. 117 ( 23 ) 2020.12
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Heteroepitaxy and Strain Engineering of Germanium-Silicon-Tin Ternary Alloy Semiconductor Thin Films for Energy Band Design Invited Reviewed
O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita
ECS Trans. Vol. 98 ( 5 ) page： 149 - 156 2020.9
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Impact of byproducts formed on a 4H-SiC surface on interface state density of Al2O3/4H-SiC(0001) gate stacks Reviewed
Doi Takuma, Shibayama Shigehisa, Takeuchi Wakana, Sakashita Mitsuo, Taoka Noriyuki, Shimizu Mitsuaki, Nakatsuka Osamu
APPLIED PHYSICS LETTERS Vol. 116 ( 22 ) 2020.6
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Ferroelectric phase formation for undoped ZrO2 thin films by wet O2 annealing Reviewed
S. Shibayama, J. Nagano, M. Sakashita, and O. Nakatsuka
Jpn. J. Appl. Phys. Vol. 59 page： SMMA04-1 2020.4
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Mobility enhancement by mechanical uniaxial stress on 4H-SiC (0001) lateral metal-oxide-semiconductor field-effect-transistor Reviewed
Takeuchi Wakana, Kutsuki Katsuhiro, Kagoshima Eiji, Onishi Toru, Iwasaki Shinya, Sakashita Mitsuo, Fujiwara Hirokazu, Nakatsuka Osamu
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 2020.4
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Development of Germanium-Tin-Related Semiconductor Heterostructures for Energy Band Design in Electronic and Optoelectronic Applications Invited Reviewed
O. Nakatsuka, M. Fukuda, M. Sakashita, M. Kurosawa, S. Shibayama, and S. Zaima
ECS Trans. 2019 Vol. 92 page： 41 2019.10
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Formation and optoelectronic property of strain-relaxed Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny double heterostructures on a boron-ion-implanted Ge(001) substrate Reviewed
Fukuda Masahiro, Rainko Denis, Sakashita Mitsuo, Kurosawa Masashi, Buca Dan, Nakatsuka Osamu, Zaima Shigeaki
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 2019.8
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Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-xSnx on SiO2 fabricated by a low thermal budget process Reviewed
K. Takahashi, H. Ikenoue, M. Sakashita, O. Nakatsuka, S. Zaima, and M. Kurosawa
Applied Physics Express Vol. 12 page： 051016 2019.5
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Effect of carbon in Si oxide interlayers of the Al2O3/4H-SiC structure on interfacial reaction by oxygen radical treatment (vol 58, SBBD05, 2019) Reviewed
Doi Takuma, Takeuchi Wakana, Shibayama Shigehisa, Sakashita Mitsuo, Taoka Noriyuki, Nakatsuka Osamu, Zaima Shigeaki
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 2019.4
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Effect of carbon in Si oxide interlayers of the Al2O3/4H-SiC structure on interfacial reaction by oxygen radical treatment Reviewed
T. Doi, W. Takeuchi, S. Shibayama, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima
Jpn. J. Appl. Phys. Vol. 58 page： SBBD05 2019.2
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Further reduction of Schottky barrier height of Hf-germanide/n-Ge(001) contacts by forming epitaxial HfGe2
Senga Kazuki, Shibayama Shigehisa, Sakashita Mitsuo, Zaima Shigeaki, Nakatsuka Osamu
2019 NINETEENTH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT) page： . 2019
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Crystalline and Electrical Properties of Ge1-xSnx/Ge1-x-ySixSny Quantum Well Structures
Suwito Galih Ramadana, Fukuda Masahiro, Shibayama Shigehisa, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki
2019 COMPOUND SEMICONDUCTOR WEEK (CSW) page： . 2019
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Synthesis of heavily Ga-doped Si1-xSnx/Si heterostructures and their valence-band-offset determination Reviewed
M. Kurosawa, Y. Inaishi, R. Tange, M. Sakashita, O. Nakatsuka, and S. Zaima
Jpn. J. Appl. Phys. Vol. 58 page： SAAS02 2018.11
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Optoelectronic properties of high-Si-content-Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny double heterostructure Reviewed
M. Fukuda, D. Rainko, M. Sakashita, M. Kurosawa, D. Buca, O. Nakatsuka, and S. Zaima
Semicond. Sci. Tech. Vol. 33 ( 12 ) page： 124018 2018.11
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A New Application of Ge1-xSnx: Thermoelectric Materials Invited Reviewed
M. Kurosawa, Y. Imai, T. Iwahashi, K. Takahashi, M. Sakashita, O. Nakatsuka, and S. Zaima
ECS Trans. 2018 Vol. 86 ( 7 ) page： 321-328 2018.10
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Alleviation of Fermi level pinning at metal/n-Ge interface with lattice-matched SixGe1-x-ySny ternary alloy interlayer on Ge Reviewed
Suzuki Akihiro, Nakatsuka Osamu, Sakashita Mitsuo, Zaima Shigeaki
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 6 ) 2018.6
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Dopant behavior in heavily doped polycrystalline Ge1-xSnx layers prepared with pulsed laser annealing in water Reviewed
Takahashi Kouta, Kurosawa Masashi, Ikenoue Hiroshi, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 4 ) 2018.4
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High n-type Sb dopant activation in Ge-rich poly-Ge1-xSnx layers on SiO2 using pulsed laser annealing in flowing water Reviewed
Takahashi Kouta, Kurosawa Masashi, Ikenoue Hiroshi, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki
APPLIED PHYSICS LETTERS Vol. 112 ( 6 ) 2018.2
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Effect of N bonding structure in AlON deposited by plasma-assisted atomic layer deposition on electrical properties of 4H-SiC MOS capacitor Reviewed
Takeuchi Wakana, Yamamoto Kensaku, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Sigeaki
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 1 ) 2018.1
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Low thermal budget fabrication of poly-Ge1-xSnx thin film thermoelectric generator
Takahashi Kouta, Ikenoue Hiroshi, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki, Kurosawa Masashi
2018 IEEE 2ND ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2018) page： 313 - 315 2018
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Modulation of Fermi level pining position at metal/n-Ge interface by semimetal Ge1-xSnx and Sn interlayers Reviewed
Suzuki Akihiro, Nakatsuka Osamu, Sakashita Mitsuo, Zaima Shigeaki
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 70 page： 162-166 2017.11
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Low-temperature crystallization of Ge-rich GeSn layers on Si3N4 substrate Reviewed
Yoshikawa Isao, Kurosawa Masashi, Takeuchi Wakana, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 70 page： 151-155 2017.11
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Control of Ge1-x-ySixSny layer lattice constant for energy band alignment in Ge1-xSnx/Ge1-x-ySixSny heterostructures Reviewed
Fukuda Masahiro, Watanabe Kazuhiro, Sakashita Mitsuo, Kurosawa Masashi, Nakatsuka Osamu, Zaima Shigeaki
SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 32 ( 10 ) 2017.10
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Hydrogen-surfactant-mediated epitaxy of Ge1-xSnx layer and its effects on crystalline quality and photoluminescence property
Nakatsuka Osamu, Fujinami Shunsuke, Asano Takanori, Koyama Takeshi, Kurosawa Masashi, Sakashita Mitsuo, Kishida Hideo, Zaima Shigeaki
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 1 ) 2017.1
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Solid-phase crystallization of Si1-x-ySnxCy ternary alloy layers and characterization of their crystalline and optical properties
Yano Shota, Yamaha Takashi, Shimura Yosuke, Takeuchi Wakana, Sakashita Mitsuo, Kurosawa Masashi, Nakatsuka Osamu, Zaima Shigeaki
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 1 ) 2017.1
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Hydrogen-surfactant-mediated epitaxy of Ge1-xSnx layer and its effects on crystalline quality and photoluminescence property Reviewed
O. Nakatsuka, S. Fujinami, T. Asano, T. Koyama, M. Kurosawa, M. Sakashita, H. Kishida and S. Zaima
Jpn. J. Appl. Phys. Vol. 56 page： 01AB05 2016.12
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Solid-phase crystallization of Si1-x-ySnxCy ternary alloy layers and characterization of their crystalline and optical properties Reviewed
S. Yano, T. Yamaha, Y. Shimura, W. Takeuchi, M. Sakashita, M. Kurosawa, O. Nakatsuka and S. Zaima
Jpn. J. Appl. Phys. Vol. 56 page： 01AB02 2016.11
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Density functional study for crystalline structures and electronic properties of Si1-xSnx binary alloys Reviewed
Y. Nagae, M. Kurosawa, S. Shibayama, M. Araidai, M. Sakashita, O. Nakatsuka, K. Shiraishi and S. Zaima
Jpn. J. Appl. Phys. Vol. 55 page： 08PE04 2016.7
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Effect of GeO2 deposition temperature in atomic layer deposition on electrical properties of Ge gate stack
M. Kanematsu, S. Shibayama, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima
Jpn. J. Appl. Phys. Vol. 55 page： 08PC05 2016.6
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Ge基板上エピタキシャルGeSn膜の電気的活性な欠陥の評価
金田裕一, 兼松正行, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
信学技報 IEICE Technical Report page： 37 2016.6
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Sn系IV族半導体混晶薄膜の成長と物性評価
志村洋介, 竹内和歌奈, 坂下満男, 黒澤昌志, 中塚理, 財満鎭明
信学技報 IEICE Technical Report Vol. 116 page： 23 2016.4
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Effects of nitridation for SiO2/SiC interface on defect properties near the conduction band edge
W. Takeuchi, K. Yamamoto, N. Taoka, M. Sakashita, T. Kanemura, O. Nakatsuka, and S. Zaima
Jpn. J. Appl. Phys. Vol. 55 page： 04ER13 2016.3
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Effect of in situ Sb doping on crystalline and electrical characteristics of n-type Ge1-xSnx epitaxial layer
J. Jeon, T. Asano, Y. Shimura, W. Takeuchi, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima
Jpn. J. Appl. Phys. Vol. 55 page： 04ER13 2016.3
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Growth of ultrahigh-Sn-content Ge1-xSnx epitaxial layer and its impact on controlling Schottky barrier height of metal/Ge contact
A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima
Jpn. J. Appl. Phys. Vol. 55 page： 04EB12 2016.3
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Experimental observation of type-I energy band alignment in lattice-matched Ge1-x-ySixSny/Ge heterostructures
T. Yamaha, S. Shibayama, T. Asano, K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka and S. Zaima
Appl. Phys. Lett. Vol. 108 page： 061909 2016.2
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Low thermal budget n-type doping into Ge(001) surface using ultraviolet laser irradiation in phosphoric acid solution
K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka and S. Zaima
Appl. Phys. Lett. Vol. 108 page： 052104 2016.2
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原子層堆積法を用いたGeO2/Ge界面形成および欠陥の堆積温度依存性
兼松正行, 柴山茂久, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会研究報告 page： 5 2016.1
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界面エネルギー制御による絶縁膜上GeSn薄膜の低温結晶成長
吉川勲, 黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会研究報告 page： 21 2016.1
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Characterization of Shallow-and Deep-Level Defects in Undoped Ge1-xSnx Epitaxial Layers by Electrical Measurements
W. Takeuchi, T. Asano, Y. Inuzuka, M. Sakashita, O. Nakatsuka and S. Zaima
ECS Journal of Solid State Science and Technology Vol. 5 page： 3082 2016.1
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Mobility Behavior of Polycrystalline Si1-x-yGexSny Grown on Insulators
T. Ohmura, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima
Transactions of the Materials Research Society of Japan Vol. 40 page： 351 2015.12
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Reduction of Schottky barrier height at metal/n-Ge interface by introducing an ultra-high Sn content Ge1-xSnx interlayer
A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima
Appl. Phys. Lett. Vol. 107 page： 212103 2015.11
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Challenges of Energy Band Engineering with New Sn-Related Group IV Semiconductor Materials for Future Integrated Circuits
S. Zaima, O. Nakatsuka, T. Yamaha, T. Asano, S. Ike, A. Suzuki, M. Kurosawa, W. Takeuchi, and M. Sakashita
ECS Trans. 2015 Vol. 69 page： 89 2015.10
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Oxygen and germanium migration at low temperature influenced by the thermodynamic nature of the materials used in germanium metal-insulator-semiconductor structures
K. Kato, N. Taoka, M. Sakashita, O. Nakatsuka, and S. Zaima
Appl. Phys. Lett. Vol. 107 page： 102102 2015.9
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Epitaxial formation of Ni germanide on Ge(0 0 1) substrate by reactive deposition
Y. Deng, O. Nakatsuka, A. Suzuki, M. Sakashita, S, Zaima
Solid-State Electronics Vol. 110 page： 44 2015.8
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Growth and applications of GeSn-related group-IV semiconductor materials Reviewed
S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, W. Takeuchi and M. Sakashita
Science and Technology of Advanced Materials Vol. 16 page： 043502 2015.7
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High hole mobility tin-doped polycrystalline germanium layers formed on insulating substrates by low-temperature solid-phase crystallization Reviewed
W. Takeuchi, N. Taoka, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima
Appl. Phys. Lett. Vol. 107 page： 022103 2015.7
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SiO2/SiC MOS界面の欠陥特性に酸窒化処理が与える影響
竹内和歌奈, 山本建策, 坂下満男, 金村髙司, 中塚理, 財満鎭明
信学技報 IEICE Technical Report Vol. 115 page： 27 2015.6
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Ge1-xSnxエピタキシャル層中の欠陥へ及ぼす熱処理の効果
浅野孝典, 柴山茂久, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
信学技報 IEICE Technical Report Vol. 115 page： 63 2015.6
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金属/Ge界面への超高Sn組成SnxGe1-x層導入による界面電気伝導特性の制御
鈴木陽洋, 柴山茂久, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
信学技報 IEICE Technical Report Vol. 115 page： 57 2015.6
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高Sn組成SiSnの形成とバンド構造 －直接遷移構造化を目指して－
黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
信学技報 IEICE Technical Report Vol. 115 page： 35 2015.4
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Influence of interface structure on electrical properties of NiGe/Ge contacts Reviewed
Y. Deng, O. Nakatsuka, M. Sakashita and S. Zaima
Jpn. J. Appl. Phys. Vol. 54 page： 05EA01 2015.4
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Impact of hydrogen surfactant on crystallinity of Ge1-xSnx epitaxial layers Reviewed
T. Asano, N. Taoka, K. Hozaki, W. Takeuchi, M. Sakashita, O. Nakatsuka and S. Zaima
Jpn. J. Appl. Phys. Vol. 54 page： 04DH15 2015.3
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Formation of chemically stable GeO2 on the Ge surface with pulsed metal-organic chemical vapor deposition Reviewed
S. Shibayama, T. Yoshida, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
Appl. Phys. Lett. Vol. 106 page： 062107 2015.2
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Sn/Geコンタクトにおけるフェルミレベルピニングの軽減およびショットキー障壁高さの低減
鈴木陽洋, 柴山茂久, 黒澤昌志, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
応用物理学会 薄膜・表面物理分科会、シリコンテクノロジー分科会 共催 特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」第20回記念研究会研究報告 page： 59 2015.1
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GeO2薄膜の正方晶形成による化学的安定性の向上
柴山茂久, 吉田鉄兵, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
応用物理学会 薄膜・表面物理分科会、シリコンテクノロジー分科会 共催 特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」第20回記念研究会研究報告 page： 185 2015.1
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Challenges and Developments in GeSn Process Technology for Si Nanoelectronics Invited Reviewed
S. Zaima, O. Nakatsuka, N. Taoka, K. Kato, W. Takeuchi, and M. Sakashita
ECS Trans. 2014 Vol. 64 page： 147 2014.10
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Formation of high-quality oxide/Ge1-xSnx interface with high surface Sn content by controlling Sn migration Reviewed
K. Kato, N. Taoka, T. Asano, T. Yoshida, M. Sakashita, O. Nakatsuka, and S. Zaima
Appl. Phys. Lett. Vol. 105 page： 122103 2014.9
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Robustness of Sn precipitation during thermal oxidation of Ge1-xSnx on Ge(001) Reviewed
K. Kato, T. Asano, N. Taoka, M. Sakashita, W. Takeuchi, O. Nakatsuka, S. Zaima
Jpn. J. Appl. Phys. Vol. 53 page： 08LD04 2014.7
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Importance of Ge surface oxidation with high oxidation rate in obtaining low interface state density at oxide/Ge interfaces Reviewed
S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
Jpn. J. Appl. Phys. Vol. 53 page： 08LD02 2014.7
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Interface properties of Al2O3/Ge structures with thin Ge oxide interfacial layer formed by pulsed metal organic chemical vapor deposition Reviewed
T. Yoshida, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, W. Takeuchi, O. Nakatsuka, and S. Zaima
Jpn. J. Appl. Phys. Vol. 53 page： 08LD03 2014.7
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Interaction of Sn atoms with defects introduced by ion implantation in Ge substrate Reviewed
N. Taoka, M. Fukudome, W. Takeuchi, T. Arahira, M. Sakashita, O. Nakatsuka, and S. Zaima
J. Appl. Phys. Vol. 115 page： 173102 2014.5
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Importance of control of oxidant partial pressure on structural and electrical properties of Pr-oxide films Reviewed
K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima
Thin Solid Films Vol. 557 page： 276 2014.4
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Stabilized formation of tetragonal ZrO2 thin film with high permittivity Reviewed
K. Kato, T. Saito, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima
Thin Solid Films Vol. 557 page： 192 2014.4
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Impacts of AlGeO formation by post thermal oxidation of Al2O3/Ge structure on interfacial properties Reviewed
S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima
Thin Solid Films Vol. 557 page： 282 2014.4
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Reduction of Schottky Barrier Height for n-type Ge Contact by using Sn Electrode Reviewed
A. Suzuki, S. Asaba, J. Yokoi, K. Kato, M. Kurosawa, M. Sakashita, N. Taoka, O. Nakatsuka, S. Zaima
Jpn. J. Appl. Phys. Vol. 53 page： 04EA06 2014.3
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Defects Induced by Reactive Ion Etching in Ge Substrate Reviewed
Kusumandari, N.taoka, W. takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima
Advanced Materials Research Vol. 896 page： 241 2014.2
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低界面準位密度を有するGe MOS構造を実現するGe表面の酸化条件 Reviewed
柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
応用物理学会 薄膜・表面物理分科会、シリコンテクノロジー分科会 共催 特別研究会「ゲートスタック研究会 page： 16 2014.1
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固溶限を超えるSn組成を有するGe1-xSnx層中におけるSn原子の熱安定性 Reviewed
加藤公彦, 浅野孝典, 田岡紀之, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
応用物理学会 薄膜・表面物理分科会、シリコンテクノロジー分科会 共催 特別研究会「ゲートスタック研究会 page： 37 2014.1
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MOCVD法により形成した極薄GeO2を用いたAl2O3/GeOx/Ge構造の電気的特性および構造評価 Reviewed
吉田鉄兵, 加藤公彦, 柴山茂久, 坂下満男, 田岡紀之, 竹内和歌奈, 中塚理, 財満鎭明
応用物理学会 薄膜・表面物理分科会、シリコンテクノロジー分科会 共催 特別研究会「ゲートスタック研究会 page： 131 2014.1
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Al2O3/SiC MOS構造における伝導帯端近傍の電気特性 Reviewed
田岡紀之, 坂下満男, 中塚理, 財満鎭明
応用物理学会 薄膜・表面物理分科会、シリコンテクノロジー分科会 共催 特別研究会「ゲートスタック研究会 page： 205 2014.1
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n型Ge単結晶中におけるSnと空孔関連欠陥との相互作用 Reviewed
竹内和歌奈, 田岡紀之, 坂下満男, 中塚理, 財満鎭明
信学技報（電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス） Vol. 114 page： 113 2014
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絶縁膜上におけるIV族半導体多結晶薄膜の低温形成 ～ 低融点Snの活用 ～ Reviewed
黒澤昌志, 田岡紀之, 池上浩, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
信学技報（電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス） Vol. 114 page： 91 2014
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Sn/Geコンタクトにおけるフェルミレベルピニング現象の軽減 Reviewed
鈴木陽洋, 朝羽俊介, 横井淳, 中塚理, 黒澤昌志, 加藤公彦, 坂下満男, 田岡紀之, 財満鎭明
信学技報（電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス） Vol. 114 page： 11 2014
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Heteroepitaxial Growth of Sn-Related Group-IV Materials On Si Platform for Microelectronic and Optoelectronic Invited Reviewed
O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, M. Sakashita and S. Zaima
ECS Trans. 2013 Vol. 58 page： 149 2013.10
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Reduction of Interface States Density due to Post Oxidation with Formation of AlGeO Layer at Al2O3/Ge Interface Reviewed
S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka and S. Zaima
ECS Trans. 2013 Vol. 58 page： 301 2013.10
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Liquid-Sn-driven lateral growth of poly-GeSn on insulator assisted by surface oxide layer Reviewed
M. Kurosawa, N. Taoka, M. Sakashita, O. Nakatsuka, M. Miyao and S. Zaima
M. Kurosawa, N. Taoka, M. Sakashita, O. Nakatsuka, M. Miyao and S. Zaima Vol. 103 page： 101904 2013.9
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Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al2O3/Ge Reviewed
S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka and S. Zaima
Appl. Phys. Lett. Vol. 103 page： 082114 2013.8
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Broad defect depth distribution in germanium substrates induced by CF4 plasma Reviewed
Kusumandari, N. Taoka, W. Takeuchi, M. Fukudome, M. Sakashita, O. Nakatsuka and S. Zaima
Appl. Phys. Lett. Vol. 103 page： 033511 2013.7
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Pr 酸化膜/Ge構造におけるゲート金属が界面反応に与える影響 Reviewed
加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
ゲートスタック研究会 ─材料・プロセス・評価の物理─ page： 155-158 2013.1
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Al2O3/Ge構造に対する熱酸化機構の解明 Reviewed
柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
ゲートスタック研究会 ─材料・プロセス・評価の物理─ page： 39-42 2013.1
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テトラエトキシゲルマニウムを用いた極薄Ge酸化膜の形成 Reviewed
吉田鉄兵, 加藤公彦, 柴山茂久, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
ゲートスタック研究会 ─材料・プロセス・評価の物理─ page： 151-154 2013.1
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Effects of Light Exposure during Plasma Processing on Electrical Properties of GeO2/Ge Structures Reviewed
Kusumandari, W. Takeuchi, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima
Jpn. J. Appl. Phys. Vol. 52 page： 01AC04 2013
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Effect of Interfacial Reactions in Radical Process on Electrical Properties of Al2O3/Ge Gate Stack Structure Reviewed
K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima
J. Phys.: Conf. Ser. Vol. 417 page： 012001 2013
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Effect of gate metal on chemical bonding state in metal/Pr-oxide/Ge gate stack structure Reviewed
K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
Solid-State Electron Vol. 83 page： 56 2013
-
Interfacial Reaction Mechanism in Al2O3/Ge Structure by Oxygen Radical Reviewed
K. Kato, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
Jpn. J. Appl. Phys. Vol. 52 page： 04CA08 2013
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ラジカルプロセスによるAl2O3/Ge界面特性の改善
加藤公彦, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
特別研究会研究報告“ゲートスタック研究会 page： 125-128 2012.1
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Al2O3/Geに対する酸素熱処理が電気的特性および化学結合状態に与える効果
柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
特別研究会研究報告“ゲートスタック研究会 page： 129-132 2012.1
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Characterization of Damage of Al2O3/Ge Gate Stack Structure Induced with Light Radiation during Plasma Nitridation Reviewed
Kusumandari, W. Takeuchi, K. Kato, S. Shibayama, M. Sakashita, O. Nakatsuka, and S. Zaima
Jpn. J. Appl. Phys. Vol. 51 page： 01AJ01 2012
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Improvement of Al2O3/Ge interfacial properties by O2-annealing Reviewed
S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima
Thin Solid Films Vol. 520 page： 3397 2012
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電流検出型原子間力顕微鏡を用いた欠陥に起因するPr酸化膜のリーク電流機構の解明 Reviewed
足立正樹, 加藤雄三, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明
ゲートスタック研究会 -材料・プロセス・評価の物理- page： 123-126 2011.1
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Pr酸化膜/Si構造へのAl導入による界面反応抑制効果 Reviewed
古田和也, 竹内和歌奈, 加藤公彦, 坂下満男, 近藤博基, 中塚理, 財満鎭明
ゲートスタック研究会 -材料・プロセス・評価の物理- page： 51-54 2011.1
-
Al2O3界面層およびラジカル窒化法によるHigh-k/Ge界面構造および電気的特性の制御 Reviewed
加藤公彦, 京極真也, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明
ゲートスタック研究会 -材料・プロセス・評価の物理- page： 55-58 2011.1
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Pr酸化膜/PrON/Ge構造におけるPrの化学結合状態が電気的特性に及ぼす影響 Reviewed
加藤公彦, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明
ゲートスタック研究会 -材料・プロセス・評価の物理- page： 99-102 2011.1
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Analysis of Local Leakage Current of Pr Oxide Thin Films with Conductive Atomic Force Microscopy Reviewed
M. Adachi, M. Sakashita, H. Kondo, W. Takeuchi, O. Nakatsuka, and S. Zaima
Jpn. J. Appl. Phys. Vol. 50 page： 04DA08 2011
-
Effect of Pr Valence State on Interfacial Structure and Electrical Properties of Pr-oxide/PrON/Ge Gate Stack Structure Reviewed
K. Kato, M. Sakashita, W. Takeuchi, H. Kondo, O. Nakatsuka, and S. Zaima
Jpn. J. Appl. Phys. Vol. 50 page： 04DA17 2011
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原子層堆積法により形成したPrAlOの結晶構造および電気的特性
古田和也、竹内和歌奈、坂下満男、近藤博基、中塚理、財満鎭明
ゲートスタック技術の進展 -新構造・新材料を中心に- page： 39-42 2010.6
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1.2 nm-SiONゲート絶縁膜における局所劣化現象の電流検出型原子間力顕微鏡を用いたナノスケール観察
加藤雄三, 平安座朝誠, 坂下満男, 近藤博基, 財満鎭明
ゲートスタック研究会 -材料・プロセス・評価の物理- page： 105-108 2010.1
-
Pr(EtCp)3を用いたPr酸化膜の原子層堆積とその結晶構造及び電気的特性
古田和也, 松井裕高, 近藤博基, 坂下満男, 財満鎭明
ゲートスタック研究会 -材料・プロセス・評価の物理- page： 125-128 2010.1
-
ALD-Pr酸化膜/Ge3N4/Ge構造における界面構造と電気的特性
加藤公彦, 近藤博基, 坂下満男, 財満鎭明
ゲートスタック研究会 -材料・プロセス・評価の物理- page： 121-124 2010.1
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*Metal-organic chemical vapor deposition of high-dielectric-constant praseodymium oxide films using a cyclopentadienyl precursor Reviewed
H. Kondo, S. Sakurai, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima
Appl. Phys. Lett. Vol. 95 page： 012105 2010
-
*Formation of Pr Oxide Films by Atomic Layer Deposition Using Pr(EtCp)3 precursor Reviewed
H. Kondo, H. Matsui, K. Furuta, M. Sakashita, and S. Zaima
Jpn. J. Appl. Phys. Vol. 49 page： 04DA14 2010
-
*Formation Processes of Ge3N4 Films by Radical Nitridation and Their Electrical Properties Reviewed
K. Kato, H. Kondo, , M. Sakashita, and S. Zaima
Thin Solid Films Vol. 518 2010
-
アモルファスTi-Si-N MOSゲート電極の熱的安定性およびスケーラビリティ
宮本和明，古米孝平，近藤博基，坂下満男，財満鎭明
ゲートスタック研究会 -材料・プロセス・評価の物理- page： 89-92 2009.1
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アモルファスTi-Si-NおよびHf-Si-N MOSゲート電極の結晶構造と抵抗率の窒素濃度依存性
近藤博基，宮本和明，古米孝平，坂下満男，財満鎭明
ゲートスタック研究会 -材料・プロセス・評価の物理- page： 191-194 2009.1
-
Al2O3界面層挿入によるLaAlO3/Ge 界面制御効果
加藤亮祐，京極真也，坂下満男，近藤博基，財満鎭明
ゲートスタック研究会 -材料・プロセス・評価の物理- page： 133-136 2009.1
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Pr(EtCp)3を用いたMOCVD法によるPr酸化膜の作製およびその電気的特性の評価
松井裕高，櫻井晋也，近藤博基，坂下満男，財満鎭明
ゲートスタック研究会 -材料・プロセス・評価の物理- page： 125-128 2009.1
-
Thermal Stability and Scalability of Mictamict Ti–Si–N Metal–Oxide–Semiconductor Gate Electrodes Reviewed
H. Kondo, K. Furumai, M. Sakashita, A. Sakai, and S. Zaima
Jpn. J. Appl. Phys. Vol. 48 page： 04C012-1-5 2009
-
Pt(EtCp)3を用いた原子層堆積法によるPr酸化膜の形成
近藤博基, 古田和也, 松井裕高, 坂下満男, 財満鎭明
信学技報 Vol. 109 page： 81-85 2009
-
LaAlO/Ge構造へのALD-Al2O3界面制御層挿入の効果
坂下満男, 加藤亮祐, 京極真也, 近藤博基, 財満鎭明
信学技報 Vol. 109 page： 61-66 2009
-
ラジカル窒化法によるHigh-k/Ge界面構造制御
加藤公彦, 近藤博基, 坂下満男, 財満鎭明
信学技報 Vol. 109 page： 39-44 2009
-
Effects of Atomic Layer Deposition-Al2O3 Interface Layers on Interfacial Properties of Ge Metal–Oxide–Semiconductor Capacitors Reviewed
R. Kato, S. Kyogoku, M. Sakashita, H. Kondo, and S. Zaima
Jpn. J. Appl. Phys. Vol. 48 page： 05DA04-1-4 2009
-
Crystalline and electrical properties of mictamict TiSiN gate MOS capacitors Reviewed
K. Furumai, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa and S. Zaima
Jpn. J. Appl. Phys Vol. 47 ( 4 ) page： 2420-2424 2008
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Silicide and germanide technology for contacts and gates in MOSFET applications Reviewed
S. Zaima, O. Nakatsuka, H. Kondo, M. Sakashita, A. Sakai, and M. Ogawa
Vol. 517 page： 80-83 2008
-
Behavior of Local Charge Trapping Sites in La2O3-Al2O3 Composite Films under Constant Voltage Stress Reviewed
T. Sago, A. Seko, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima
Jpn. J. Appl. Phys Vol. 46 ( 4B ) page： 1879-1884 2007
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Ge基板上へのPr酸化膜の作製と評価
坂下満男、鬼頭伸幸、酒井 朗、小川正毅、財満鎭明
信学技報 Vol. 107 ( 85 ) page： 107-111 2007
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Composition Dependence of Work Function in Metal (Ni,Pt) Germanide Gate Electrodes Reviewed
D. Ikeno, Y. Kaneko, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima
Jpn. J. Appl. Phys. Vol. 46 ( 4B ) page： 1865-1869 2007
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Film Structures and Electrical Properties of Pr Silicate Formed by Pulsed Laser Deposition Reviewed
K. Ariyoshi, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima
Jpn. J. Appl. Phys. Vol. 45 page： 2903-2907 2006
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電流検出型原子間力顕微鏡を用いた極薄ゲート絶縁膜の信頼性評価
世古明義, 坂下満男, 酒井朗, 財満鎭明
日本信頼性学会誌「信頼性」 Vol. 28 ( 3 ) page： 163-174 2006
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La2O3-Al2O3複合膜における定電圧ストレス印加時の局所的な電荷捕獲とその放出過程 Reviewed
佐合寿文, 世古明義, 坂下満男, 酒井朗, 小川正毅, 財満鎭明
信学技報 Vol. 106 page： 19 2006
-
Characterization of Local Current Leakage in La2O3-Al2O3 Composite Films by Conductive Atomic Force Microscopy Reviewed
A. Seko, T. Sago, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima
Jpn. J. Appl. Phys. Vol. 45 page： 2954-2960 2006
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Thermal Stability and Electrical Properties of (La2O3)1-x(Al2O3)x Composite Films Reviewed
R. Fujitsuka, M. Sakashita, A. Sakai, M. Ogawa, S. Zaima, and Y. Yasuda
Jpn. J. Appl. Phys. Vol. 44 page： 2428-2432 2005
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電流検出型原子間力顕微鏡を用いたLa2O3-Al2O3複合膜の局所リーク電流評価 Reviewed
世古明義, 佐合寿文, 藤塚良太, 坂下満男, 酒井朗, 小川正毅, 財満鎭明
信学技報 Vol. 104 page： 35 2005
-
Fabrication and Evaluation of Floating Gate Memories with Surface-Nitrided Si Nanocrystals Reviewed
S. Naito, T. Ueyama, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima
Jpn. J. Appl. Phys. Vol. 44 page： 5687-5691 2005
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Pulsed Laser Deposition and Analysis for Structural and Electrical Properties of HfO2-TiO2 Composite Films Reviewed
K. Honda, A. Sakai, M. Sakashita, H. Ikeda, S. Zaima, and Y. Yasuda
Jpn. J. Appl. Phys. Vol. 43 page： 1571-1576 2004
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Praseodymium silicate formed by postdeposition high-temperature annealing Reviewed
A. Sakai, S. Sakashita, M. Sakashita, Y. Yasuda, S. Zaima, and S. Miyazaki
Appl. Phys. Lett. Vol. 85 page： 5322-5324 2004
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HfO2 Film Formation Combined with Radical Nitridation and Its Electrical Characteristic Reviewed
R. Takahashi, M. Sakashita, A. Sakai, S. Zaima, and Y. Yasuda
Jpn. J. Appl. Phys. Vol. 43 page： 7821-7825 2004
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Growth of silicon nanocrystal dots with high number density by ultra-high vacuum chemical vapor deposition Reviewed
S. Naito, M. Satake, H. Kondo, M. Sakashita, A. Sakai, S. Zaima, and Y. Yasuda
Jpn. J. Appl. Phys. Vol. 43 page： 3779-3783 2004