Papers - SAKASHITA, Mitsuo
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Shibayama, S; Ishimoto, S; Kato, Y; Sakashita, M; Kurosawa, M; Nakatsuka, O
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY Vol. 13 page： 79 - 85 2025
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Shibayama, S; Shibata, K; Sakashita, M; Kurosawa, M; Nakatsuka, O
APPLIED PHYSICS EXPRESS Vol. 17 ( 11 ) 2024.11
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Shibayama, S; Takagi, K; Sakashita, M; Kurosawa, M; Nakatsuka, O
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 176 2024.6
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Hiraide, T; Shibayama, S; Kurosawa, M; Sakashita, M; Nakatsuka, O
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 63 ( 4 ) 2024.4
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Emergence of ferroelectricity in ZrO2 thin films on TiN/Si featuring high temperature sputtering method
Nagano Jotaro, Ikeguchi Shota, Doi Takuma, Sakashita Mitsuo, Nakatsuka Osamu, Shibayama Shigehisa
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 163 2023.8
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Self-organized Ge1-x Sn (x) quantum dots formed on insulators and their room temperature photoluminescence
Hashimoto Kaoru, Shibayama Shigehisa, Asaka Koji, Sakashita Mitsuo, Kurosawa Masashi, Nakatsuka Osamu
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 62 ( 7 ) 2023.7
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Lattice-matched growth of high-Sn-content (x similar to 0.1) Si1-x Sn x layers on Si1-y Ge y buffers using molecular beam epitaxy
Fujimoto Kazuaki, Kurosawa Masashi, Shibayama Shigehisa, Sakashita Mitsuo, Nakatsuka Osamu
APPLIED PHYSICS EXPRESS Vol. 16 ( 4 ) 2023.4
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Heteroepitaxial growth of CaGe2 films on high-resistivity Si(111) substrates and its application for germanane synthesizing Reviewed
Kazuya Okada, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, and Masashi Kurosawa
Mater. Sci. Semicond. Proc. Vol. 161 page： 107462 2023.3
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Ge1−xSnx layers with x~0.25 on InP(001) substrate grown by low-temperature molecular beam epitaxy reaching 70 °C and in-situ Sb doping Reviewed
Shigehisa Shibayama, Komei Takagi, Mitsuo Sakashita, Masashi Kurosawa, and Osamu Nakatsuka
Mater. Sci. Semicond. Proc. Vol. 176 page： 108302 2023
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Enhancement of channel mobility in 4H-SiC trench MOSFET by inducing stress at SiO2/SiC gate interface Reviewed
Kagoshima E., Takeuchi W., Kutsuki K., Sakashita M., Fujiwara H., Nakatsuka O.
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 61 ( SC ) 2022.5
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Visualization of local strain in 4H-SiC trench metal-oxide-semiconductor field-effect transistor using synchrotron nanobeam X-ray Reviewed
W. Takeuchi, E. Kagoshima, K. Sumitani, Y. Imai, S. Shibayama, M. Sakashita, S. Kimura, H. Tomita, T. Nishiwaki, H. Fujiwara, and O. Nakatsuka
Japanese Journal of Applied Physics Vol. 61 page： SC1072 2022.5
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Impact of oxide/4H-SiC interface state density on field-effect mobility of counter-doped n-channel 4H-SiC MOSFETs Invited Reviewed
T. Doi, S. Shibayama, M. Sakashita, N. Taoka, M. Shimizu, and O. Nakatsuka
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 61 ( 2 ) page： 021007 2022.2
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Photoluminescence properties of heavily Sb doped Ge1-x Sn (x) and heterostructure design favorable for n(+)-Ge1-x Sn (x) active layer
Zhang Shiyu, Fukuda Masahiro, Jeon Jihee, Sakashita Mitsuo, Shibayama Shigehisa, Nakatsuka Osamu
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 61 ( SA ) 2022.1
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Low-temperature formation of Mg/n-type 4H-SiC ohmic contacts with atomically flat interface by lowering of Schottky barrier height
Doi Takuma, Shibayama Shigehisa, Sakashita Mitsuo, Kojima Kazutoshi, Shimizu Mitsuaki, Nakatsuka Osamu
APPLIED PHYSICS EXPRESS Vol. 15 ( 1 ) 2022.1
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Interface structures and electrical properties of micro-fabricated epitaxial Hf-digermanide/n-Ge(001) contacts Invited Reviewed
K. Kasahara, K. Senga, M. Sakashita, S. Shibayama, and O. Nakatsuka
IEEE Journal of the Electron Devices Society 2021.12
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Lowering of the Schottky barrier height of metal/n-type 4H-SiC contacts using low-work-function metals with thin insulator insertion
Doi Takuma, Shibayama Shigehisa, Sakashita Mitsuo, Shimizu Mitsuaki, Nakatsuka Osamu
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 60 ( 7 ) 2021.7
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Impact of Wet Annealing on Ferroelectric Phase Formation and Phase Transition of HfO2-ZrO2 System
Shibayama Shigehisa, Nagano Jotaro, Asaka Koji, Sakashita Mitsuo, Nakatsuka Osamu
ACS APPLIED ELECTRONIC MATERIALS Vol. 3 ( 5 ) page： 2203 - 2211 2021.5
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Formation and Characterization of Ge1–x–ySixSny/Ge Heterojunction Structures for Photovoltaic Cell Application Invited Reviewed
O. Nakatsuka, S. Asaba, M. Kurosawa, M. Sakashita, N. Taoka, and S. Zaima
ECS Trans. Vol. 102 ( 4 ) page： 3 - 9 2021.4
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Improved interface uniformity of epitaxial HfGe2/Ge(001) contact by microfabrication and its electron conduction property
Kasahara Kentaro, Senga Kazuki, Sakashita Mitsuo, Shibayama Shigehisa, Nakatsuka Osamu
TWENTIETH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT 2021) page： 58 - 60 2021
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Formation of ultra-thin Ge1-xSnx/Ge1-x-ySixSny quantum heterostructures and their electrical properties for realizing resonant tunneling diode Reviewed
Suwito Galih Ramadana, Fukuda Masahiro, Suprayoga Edi, Ohtsuka Masahiro, Hasdeo Eddwi Hesky, Nugraha Ahmad Ridwan Tresna, Sakashita Mitsuo, Shibayama Shigehisa, Nakatsuka Osamu
APPLIED PHYSICS LETTERS Vol. 117 ( 23 ) 2020.12