Papers - SAKASHITA, Mitsuo

*Formation Processes of Ge3N4 Films by Radical Nitridation and Their Electrical Properties Reviewed

K. Kato, H. Kondo, , M. Sakashita, and S. Zaima

Thin Solid Films   Vol. 518   2010

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アモルファスTi-Si-N MOSゲート電極の熱的安定性およびスケーラビリティ

宮本和明，古米孝平，近藤博基，坂下満男，財満鎭明

ゲートスタック研究会 -材料・プロセス・評価の物理-     page： 89-92   2009.1

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アモルファスTi-Si-NおよびHf-Si-N MOSゲート電極の結晶構造と抵抗率の窒素濃度依存性

近藤博基，宮本和明，古米孝平，坂下満男，財満鎭明

ゲートスタック研究会 -材料・プロセス・評価の物理-     page： 191-194   2009.1

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Al2O3界面層挿入によるLaAlO3/Ge 界面制御効果

加藤亮祐，京極真也，坂下満男，近藤博基，財満鎭明

ゲートスタック研究会 -材料・プロセス・評価の物理-     page： 133-136   2009.1

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Pr(EtCp)3を用いたMOCVD法によるPr酸化膜の作製およびその電気的特性の評価

松井裕高，櫻井晋也，近藤博基，坂下満男，財満鎭明

ゲートスタック研究会 -材料・プロセス・評価の物理-     page： 125-128   2009.1

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Thermal Stability and Scalability of Mictamict Ti–Si–N Metal–Oxide–Semiconductor Gate Electrodes Reviewed

H. Kondo, K. Furumai, M. Sakashita, A. Sakai, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 48   page： 04C012-1-5   2009

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Pt(EtCp)3を用いた原子層堆積法によるPr酸化膜の形成

近藤博基, 古田和也, 松井裕高, 坂下満男, 財満鎭明

信学技報   Vol. 109   page： 81-85   2009

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LaAlO/Ge構造へのALD-Al2O3界面制御層挿入の効果

坂下満男, 加藤亮祐, 京極真也, 近藤博基, 財満鎭明

信学技報   Vol. 109   page： 61-66   2009

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ラジカル窒化法によるHigh-k/Ge界面構造制御

加藤公彦, 近藤博基, 坂下満男, 財満鎭明

信学技報   Vol. 109   page： 39-44   2009

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Effects of Atomic Layer Deposition-Al2O3 Interface Layers on Interfacial Properties of Ge Metal–Oxide–Semiconductor Capacitors Reviewed

R. Kato, S. Kyogoku, M. Sakashita, H. Kondo, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 48   page： 05DA04-1-4   2009

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Crystalline and electrical properties of mictamict TiSiN gate MOS capacitors Reviewed

K. Furumai, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa and S. Zaima

Jpn. J. Appl. Phys   Vol. 47 ( 4 ) page： 2420-2424   2008

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Silicide and germanide technology for contacts and gates in MOSFET applications Reviewed

S. Zaima, O. Nakatsuka, H. Kondo, M. Sakashita, A. Sakai, and M. Ogawa

  Vol. 517   page： 80-83   2008

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Behavior of Local Charge Trapping Sites in La2O3-Al2O3 Composite Films under Constant Voltage Stress Reviewed

T. Sago, A. Seko, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima

Jpn. J. Appl. Phys   Vol. 46 ( 4B ) page： 1879-1884   2007

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Ge基板上へのPr酸化膜の作製と評価

坂下満男、鬼頭伸幸、酒井　朗、小川正毅、財満鎭明

信学技報   Vol. 107 ( 85 ) page： 107-111   2007

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Composition Dependence of Work Function in Metal (Ni,Pt) Germanide Gate Electrodes Reviewed

D. Ikeno, Y. Kaneko, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 46 ( 4B ) page： 1865-1869   2007

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Film Structures and Electrical Properties of Pr Silicate Formed by Pulsed Laser Deposition Reviewed

K. Ariyoshi, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 45   page： 2903-2907   2006

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Pr silicate films without interfacial layers were formed by pulsed laser deposition and high-temperature postdeposition annealing (PDA) and were evaluated in terms of structures and electrical properties. In the fabrication processes, film thickness and ambient gases during deposition were controlled. In some films, crystallization of Pr silicate was observed by transmission electron microscopy and it was found that tetragonal Pr2Si2O7 was epitaxially grown on Si(001) substrates. By deposition in Ar, Pr silicate with a small capacitance equivalent oxide thickness and a low leakage current density was obtained.

電流検出型原子間力顕微鏡を用いた極薄ゲート絶縁膜の信頼性評価

世古明義, 坂下満男, 酒井朗, 財満鎭明

日本信頼性学会誌「信頼性」   Vol. 28 ( 3 ) page： 163-174   2006

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La2O3-Al2O3複合膜における定電圧ストレス印加時の局所的な電荷捕獲とその放出過程 Reviewed

佐合寿文, 世古明義, 坂下満男, 酒井朗, 小川正毅, 財満鎭明

信学技報   Vol. 106   page： 19   2006

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Characterization of Local Current Leakage in La2O3-Al2O3 Composite Films by Conductive Atomic Force Microscopy Reviewed

A. Seko, T. Sago, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 45   page： 2954-2960   2006

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Thermal Stability and Electrical Properties of (La2O3)1-x(Al2O3)x Composite Films Reviewed

R. Fujitsuka, M. Sakashita, A. Sakai, M. Ogawa, S. Zaima, and Y. Yasuda

Jpn. J. Appl. Phys.   Vol. 44   page： 2428-2432   2005

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