Papers - SAKASHITA, Mitsuo
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Low-temperature crystallization of Ge-rich GeSn layers on Si3N4 substrate Reviewed
Yoshikawa Isao, Kurosawa Masashi, Takeuchi Wakana, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 70 page： 151-155 2017.11
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Control of Ge1-x-ySixSny layer lattice constant for energy band alignment in Ge1-xSnx/Ge1-x-ySixSny heterostructures Reviewed
Fukuda Masahiro, Watanabe Kazuhiro, Sakashita Mitsuo, Kurosawa Masashi, Nakatsuka Osamu, Zaima Shigeaki
SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 32 ( 10 ) 2017.10
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Hydrogen-surfactant-mediated epitaxy of Ge1-xSnx layer and its effects on crystalline quality and photoluminescence property
Nakatsuka Osamu, Fujinami Shunsuke, Asano Takanori, Koyama Takeshi, Kurosawa Masashi, Sakashita Mitsuo, Kishida Hideo, Zaima Shigeaki
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 1 ) 2017.1
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Solid-phase crystallization of Si1-x-ySnxCy ternary alloy layers and characterization of their crystalline and optical properties
Yano Shota, Yamaha Takashi, Shimura Yosuke, Takeuchi Wakana, Sakashita Mitsuo, Kurosawa Masashi, Nakatsuka Osamu, Zaima Shigeaki
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 1 ) 2017.1
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Hydrogen-surfactant-mediated epitaxy of Ge1-xSnx layer and its effects on crystalline quality and photoluminescence property Reviewed
O. Nakatsuka, S. Fujinami, T. Asano, T. Koyama, M. Kurosawa, M. Sakashita, H. Kishida and S. Zaima
Jpn. J. Appl. Phys. Vol. 56 page： 01AB05 2016.12
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Solid-phase crystallization of Si1-x-ySnxCy ternary alloy layers and characterization of their crystalline and optical properties Reviewed
S. Yano, T. Yamaha, Y. Shimura, W. Takeuchi, M. Sakashita, M. Kurosawa, O. Nakatsuka and S. Zaima
Jpn. J. Appl. Phys. Vol. 56 page： 01AB02 2016.11
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Density functional study for crystalline structures and electronic properties of Si1-xSnx binary alloys Reviewed
Y. Nagae, M. Kurosawa, S. Shibayama, M. Araidai, M. Sakashita, O. Nakatsuka, K. Shiraishi and S. Zaima
Jpn. J. Appl. Phys. Vol. 55 page： 08PE04 2016.7
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Effect of GeO2 deposition temperature in atomic layer deposition on electrical properties of Ge gate stack
M. Kanematsu, S. Shibayama, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima
Jpn. J. Appl. Phys. Vol. 55 page： 08PC05 2016.6
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Ge基板上エピタキシャルGeSn膜の電気的活性な欠陥の評価
金田裕一, 兼松正行, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
信学技報 IEICE Technical Report page： 37 2016.6
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Sn系IV族半導体混晶薄膜の成長と物性評価
志村洋介, 竹内和歌奈, 坂下満男, 黒澤昌志, 中塚理, 財満鎭明
信学技報 IEICE Technical Report Vol. 116 page： 23 2016.4
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Effects of nitridation for SiO2/SiC interface on defect properties near the conduction band edge
W. Takeuchi, K. Yamamoto, N. Taoka, M. Sakashita, T. Kanemura, O. Nakatsuka, and S. Zaima
Jpn. J. Appl. Phys. Vol. 55 page： 04ER13 2016.3
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Effect of in situ Sb doping on crystalline and electrical characteristics of n-type Ge1-xSnx epitaxial layer
J. Jeon, T. Asano, Y. Shimura, W. Takeuchi, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima
Jpn. J. Appl. Phys. Vol. 55 page： 04ER13 2016.3
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Growth of ultrahigh-Sn-content Ge1-xSnx epitaxial layer and its impact on controlling Schottky barrier height of metal/Ge contact
A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima
Jpn. J. Appl. Phys. Vol. 55 page： 04EB12 2016.3
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Experimental observation of type-I energy band alignment in lattice-matched Ge1-x-ySixSny/Ge heterostructures
T. Yamaha, S. Shibayama, T. Asano, K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka and S. Zaima
Appl. Phys. Lett. Vol. 108 page： 061909 2016.2
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Low thermal budget n-type doping into Ge(001) surface using ultraviolet laser irradiation in phosphoric acid solution
K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka and S. Zaima
Appl. Phys. Lett. Vol. 108 page： 052104 2016.2
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原子層堆積法を用いたGeO2/Ge界面形成および欠陥の堆積温度依存性
兼松正行, 柴山茂久, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会研究報告 page： 5 2016.1
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界面エネルギー制御による絶縁膜上GeSn薄膜の低温結晶成長
吉川勲, 黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会研究報告 page： 21 2016.1
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Characterization of Shallow-and Deep-Level Defects in Undoped Ge1-xSnx Epitaxial Layers by Electrical Measurements
W. Takeuchi, T. Asano, Y. Inuzuka, M. Sakashita, O. Nakatsuka and S. Zaima
ECS Journal of Solid State Science and Technology Vol. 5 page： 3082 2016.1
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Mobility Behavior of Polycrystalline Si1-x-yGexSny Grown on Insulators
T. Ohmura, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima
Transactions of the Materials Research Society of Japan Vol. 40 page： 351 2015.12
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Reduction of Schottky barrier height at metal/n-Ge interface by introducing an ultra-high Sn content Ge1-xSnx interlayer
A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima
Appl. Phys. Lett. Vol. 107 page： 212103 2015.11